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At least 91 records · Page 5

Design and Performance of an InAs Quantum Dot Scintillator with Integrated Photodetector

A new scintillation material composed of InAs quantum dots (QDs) hosted within a GaAs matrix was developed, and its performance with different types of radiation is evaluated. A methodology for designing an integrated photodetector (PD) with a low defect density and that is optically matched to the QD’s emission spectrum is introduced, utilizing an engineered epitaxial InAlGaAs metamorphic buffer layer. The photoluminescence (PL) collection efficiency of the integrated PD is examined using two-dimensional scanning laser excitation. The detector response to 5.5 MeV α-particles and 122 keV photons is presented. Yields of 13 electrons/keV for α-particles and 30–60 electrons/keV for photons were observed. The energy resolution of 12% observed with α-particles was mainly limited by noise- and geometry-related optical losses. The radiation hardness of an InAs QDs hosted within GaAs and a wider band gap AlGaAs ternary alloy was studied under a 1 MeV proton implantation up to a 10 14 cm –2 dose. The integrated PL responses were compared to evaluate PL quenching due to non-radiative defects. The QDs embedded in the AlGaAs demonstrated improved radiation hardness compared to QDs in the GaAs matrix and in the InGaAs quantum wells.

36 MATERIALS SCIENCE↗

Determination of γ-ray branching ratios for ⁹⁵Zr and ¹⁴⁷Nd

For many fission products, the γ rays emitted following decay provide an easily-detectable signature that can be used to identify their quantities and distributions in a sample. As a result, γ-ray spectroscopy is often exploited to study fission-product yields (FPYs), provided sufficiently accurate information on the γ-ray branching ratio is available. However, in many cases, the uncertainties in the existing nuclear data are large enough that they compromise the precision achievable for modern experiments and applications. To address this need, we have developed a new experimental method that is well suited to precisely measure the γ-ray branching ratios in the decay of long-lived fission products. The approach involves the production of a radiopure sample by implantation of a mass-separated ion beam from the CAlifornium Rare Isotope Breeder Upgrade (CARIBU) facility on a thin carbon foil. The emitted β -decay radiation is detected with a 4π gas proportional counter and a meticulously efficiency-calibrated high-purity germanium (HPGe) detector. As a first measurement to demonstrate the approach, we studied the γ-ray branching ratios of the strongest transitions following the decay of ⁹⁵Zr and decay-daughter ⁹⁵Nb and determined these branching ratios to fractional precisions of 1%. We then applied this approach to determine the γ-ray branching ratios for the β decay of ¹⁴⁷Nd. The results for the γ-ray branching ratios are presented here and compared to previous results and evaluations.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

New approach to precisely measure γ-ray intensities for long-lived fission products, with results for the decay of 95 Zr

For many fission products, the rays emitted following decay provide an easily-detectable signature that can be used to identify their quantities and distributions in a sample. As a result, γ-ray spectroscopy is often exploited to study fission-product yields, provided sufficiently accurate information on the γ-ray intensity is available. However, in many cases, the uncertainties in the existing nuclear data are large enough that they compromise the precision achievable for modern experiments and applications. To address this need, we have developed a new experimental method that is well suited to precisely measure absolute γ-ray intensities in the β decay of long-lived fission products. The approach involves the production of a radiopure sample by implantation of a mass-separated ion beam from the CAlifornium Rare Isotope Breeder Upgrade (CARIBU) facility on a thin carbon foil. The emitted β-decay radiation is detected with a 4π gas proportional counter and a meticulously efficiency-calibrated high-purity germanium (HPGe) detector. As a first measurement to demonstrate the approach, we studied the absolute γ-ray intensities of the strongest transitions following the β decay of 95 Zr and its decay-daughter 95 Nb, and determined them to fractional precisions of better than 1–2%. In addition, with a larger sample of activity produced through neutron irradiation of an isotopically-enriched Zr foil, we performed a high-precision measurement of the relative γ-ray intensities following the decay of 95 Zr with just the HPGe detector. Here, the sample-production method at CARIBU and the coincidence detection approach demonstrated here can be applied to study fission products with half-lives longer than a day, which includes isotopes important not only for nuclear-energy and national-security applications, but also for medical-isotope research and environmental monitoring.

4π↗

A gas chromatographic air analyzer fabricated on a silicon wafer

A miniature gas analysis system has been built based on the principles of gas chromatography (GC). The major components are fabricated in silicon using photolithography and chemical etching techniques, which allows size reductions of nearly three orders of magnitude compared to conventional laboratory instruments. The chromatography system consists of a sample injection valve and a 1.5-m-long separating capillary column, which are fabricated on a substrate silicon wafer. The output thermal conductivity detector is separately batch fabricated and integrably mounted on the substrate wafer. The theory of gas chromatography has been used to optimize the performance of the sensor so that separations of gaseous hydrocarbon mixtures are performed in less than 10 s. The system is expected to find application in the areas of portable ambient air quality monitors, implanted biological experiments, and planetary probes.

Terry, S. C.↗

System and method for all optical electrode interface for bioengineering application

The present disclosure relates to an electro-optical modulator system having a source laser which generates an input optical signal. The input optical signal is received by an electro-optical module. The electro-optical module is implantable into an anatomy and includes a plurality of pixels. Each pixel has associated therewith an electrode and an optical modulator subsystem. The electrode receives electrical signals from the anatomy. The optical modulator subsystem receives the input optical signal and modulates the input optical signal to generate modulated optical output signals in relation to the received electrical signals. A detector subsystem may be used to receive and collect the modulated optical output signals.

Patra, Susant K.↗

Neutral beam dose and sputtering characteristics in an ion implantation system

A technique and instrument design for calorimetric detection of the neutral atom content of a 60 keV argon ion beam. A beam sampling method is used to measure local heat flux to a small platinum wire at steady state; integration of power density profiles leads to a determination of equivalent neutral beam current. The fast neutral production occurs as a result of charge transfer processes in the region of the beam system between analyzing magnet and beam stop where the pressure remains less than .00001 torr. A description of the neutral beam detector is given in section along with a presentation of results. An elementary analysis of sputter material transport from target to substrate was performed; the analysis relates to semiconductor sputtering.

Roberts, A. S., Jr.↗

Flip chip packaging of a MEMS neuro-prosthetic system

A joint research team from California Institute of Technology and Jet Propulsion Laboratory is developing a fully miniaturized, smart implantable neuro-prosthetic system, by combining integrated electronics with Micro Electro Mechanical Structure (MEMS) based electrode arrays. The packaging group of this project team has been tasked with designing and fabricating a package to interface electrically between a MEMS electrode array, capable of extracting signals from brain, and an electronic chip, capable of providing on chip conditioning/processing of extracted data, while delivering the output data to a detector located outside the body.

flip↗

Lithium source for focused ion beam implantation and analysis

In this work, we present a new Li source for focused ion beam applications. Based on an AuSi eutectic alloy, Li is added as an impurity to minimize effects from degradation when exposed to air. We show the source is stable over the course of an hour and spot sizes ≲10 nm can be achieved. The Li beam can achieve hundreds of nanometer ranges in semiconductors with minimal damage being generated along the path length. The source performance is evaluated through a high-resolution ion beam induced charge collection experiment on an Si-based detector. Further application of the source for ion beam analysis is numerically explored; the example investigated is based on probing a semiconductor heterostructure through a Rutherford backscattering experiment, where the Li beam can reveal information that is inaccessible with either low energy or high energy He projectiles used as probes.

36 MATERIALS SCIENCE↗

Development of Single Photon Sources in GaN

The recent discovery of bright, room-temperature, single photon emitters in GaN leads to an appealing alternative to diamond best single photon emitters given the widespread use and technological maturity of III-nitrides for optoelectronics (e.g. blue LEDs, lasers) and high-speed, high-power electronics. This discovery opens the door to on-chip and on-demand single photon sources integrated with detectors and electronics. Currently, little is known about the underlying defect structure nor is there a sense of how such an emitter might be controllably created. A detailed understanding of the origin of the SPEs in GaN and a path to deterministically introduce them is required. In this project, we develop new experimental capabilities to then investigate single photon emission from GaN nanowires and both GAN and AlN wafers. We ion implant our wafers with the ion implanted with our focused ion beam nanoimplantation capabilities at Sandia, to go beyond typical broad beam implantation and create single photon emitting defects with nanometer precision. We've created light emitting sources using Li + and He + , but single photon emission has yet to be demonstrated. In parallel, we calculate the energy levels of defects and transition metal substitutions in GaN to gain a better understanding of the sources of single photon emission in GaN and AlN. The combined experimental and theoretical capabilities developed throughout this project will enable further investigation into the origins of single photon emission from defects in GaN, AlN, and other wide bandgap semiconductors.

36 MATERIALS SCIENCE↗

Implanted Silicon Resistor Layers for Efficient Terahertz Absorption

Broadband absorption structures are an essential component of large format bolometer arrays for imaging GHz and THz radiation. We have measured electrical and optical properties of implanted silicon resistor layers designed to be suitable for these absorbers. Implanted resistors offer a low-film-stress, buried absorber that is robust to longterm aging, temperature, and subsequent metals processing. Such an absorber layer is readily integrated with superconducting integrated circuits and standard micromachining as demonstrated by the SCUBA II array built by ROE/NIST (1). We present a complete characterization of these layers, demonstrating frequency regimes in which different recipes will be suitable for absorbers. Single layer thin film coatings have been demonstrated as effective absorbers at certain wavelengths including semimetal (2,3), thin metal (4), and patterned metal films (5,6). Astronomical instrument examples include the SHARC II instrument is imaging the submillimeter band using passivated Bi semimetal films and the HAWC instrument for SOFIA, which employs ultrathin metal films to span 1-3 THz. Patterned metal films on spiderweb bolometers have also been proposed for broadband detection. In each case, the absorber structure matches the impedance of free space for optimal absorption in the detector configuration (typically 157 Ohms per square for high absorption with a single or 377 Ohms per square in a resonant cavity or quarter wave backshort). Resonant structures with -20% bandwidth coupled to bolometers are also under development; stacks of such structures may take advantage of instruments imaging over a wide band. Each technique may enable effective absorbers in imagers. However, thin films tend to age, degrade or change during further processing, can be difficult to reproduce, and often exhibit an intrinsic granularity that creates complicated frequency dependence at THz frequencies. Thick metal films are more robust but the requirement for patterning can limit their absorption at THz frequencies and their heat capacity can be high. patterned absorber structures that offer low heat capacity, absence of aging, and uniform, predictable behavior at THz frequencies. We have correlated DC electrical and THz optical measurements of a series of implanted layers and studied their frequency dependence of optical absorption from .3 to 10 THz at cryogenic temperatures. We have modeled the optical response to determine the suitability of the implanted silicon resistor as a function of resistance in the range 10 Ohms/sq to 300 Ohms/sq.

Chervenak, J. A.↗

Excimer laser processing of backside-illuminated CCDS

An excimer laser is used to activate previously implanted dopants on the backside of a backside-illuminated CCD. The controlled ion implantation of the backside and subsequent thin layer heating and recrystallization by the short wavelength pulsed excimer laser simultaneously activates the dopant and anneals out implant damage. This improves the dark current response, repairs defective pixels and improves spectral response. This process heats a very thin layer of the material to high temperatures on a nanosecond time scale while the bulk of the delicate CCD substrate remains at low temperature. Excimer laser processing backside-illuminated CCD's enables salvage and utilization of otherwise nonfunctional components by bringing their dark current response to within an acceptable range. This process is particularly useful for solid state imaging detectors used in commercial, scientific and government applications requiring a wide spectral response and low light level detection.

Russell, S. D.↗

Atomic Layer Deposition of Chemical Passivation Layers and High Performance Anti-Reflection Coatings on Back-Illuminated Detectors

A back-illuminated silicon photodetector has a layer of Al2O3 deposited on a silicon oxide surface that receives electromagnetic radiation to be detected. The Al2O3 layer has an antireflection coating deposited thereon. The Al2O3 layer provides a chemically resistant separation layer between the silicon oxide surface and the antireflection coating. The Al2O3 layer is thin enough that it is optically innocuous. Under deep ultraviolet radiation, the silicon oxide layer and the antireflection coating do not interact chemically. In one embodiment, the silicon photodetector has a delta-doped layer near (within a few nanometers of) the silicon oxide surface. The Al2O3 layer is expected to provide similar protection for doped layers fabricated using other methods, such as MBE, ion implantation and CVD deposition.

Hoenk, Michael E.↗

NASA Tech Briefs, July 2006

Topics covered include: Airport Remote Tower Sensor Systems; Implantable Wireless MEMS Sensors for Medical Uses; Embedded Sensors for Measuring Surface Regression; Coordinating an Autonomous Earth-Observing Sensorweb; Range-Measuring Video Sensors; Stability Enhancement of Polymeric Sensing Films Using Fillers; Sensors for Using Times of Flight to Measure Flow Velocities; Receiver Would Control Phasing of a Phased-Array Antenna; Modern Design of Resonant Edge-Slot Array Antennas; Carbon-Nanotube Schottky Diodes; Simplified Optics and Controls for Laser Communications; Coherent Detection of High-Rate Optical PPM Signals; Multichannel Phase and Power Detector; Using Satellite Data in Weather Forecasting: I; Using Dissimilarity Metrics to Identify Interesting Designs; X-Windows PVT Widget Class; Shuttle Data Center File-Processing Tool in Java; Statistical Evaluation of Utilization of the ISS; Nanotube Dispersions Made With Charged Surfactant; Aerogels for Thermal Insulation of Thermoelectric Devices; Low-Density, Creep-Resistant Single-Crystal Superalloys; Excitations for Rapidly Estimating Flight-Control Parameters; Estimation of Stability and Control Derivatives of an F-15; Tool for Coupling a Torque Wrench to a Round Cable Connector; Ultrasonically Actuated Tools for Abrading Rock Surfaces; Active Struts With Variable Spring Stiffness and Damping; Multiaxis, Lightweight, Computer-Controlled Exercise System; Dehydrating and Sterilizing Wastes Using Supercritical CO2; Alpha-Voltaic Sources Using Liquid Ga as Conversion Medium; Ice-Borehole Probe; Alpha-Voltaic Sources Using Diamond as Conversion Medium; White-Light Whispering-Gallery-Mode Optical Resonators; Controlling Attitude of a Solar-Sail Spacecraft Using Vanes; and Wire-Mesh-Based Sorber for Removing Contaminants from Air.

Source record↗

Material Effects on Electron-Capture Decay in Cryogenic Sensors

Several current searches for physics beyond the standard model are based on measuring the electron-capture (EC) decay of radionuclides implanted into cryogenic high-resolution sensors. The sensitivity of these experiments has already reached the level where systematic effects related to atomic state energy changes from the host material are a limiting factor. One example is a neutrino mass study based on the nuclear EC decay of 7 Be to 7 Li inside cryogenic Ta-based sensors. Here, to understand the material effects at the required level, we use density-functional theory to model the electronic structure of lithium atoms in different atomic environments of the polycrystalline Ta absorber film. The calculations reveal that the Li 1s binding energies can vary by more than 2 eV due to insertion at different lattice sites, at grain boundaries, in disordered Ta, and in the vicinity of various impurities. However, the total range of Li 1s shifts does not exceed 4 eV, even for extreme amorphous disorder. Furthermore, when investigating the effects on the Li 2s levels, we find broadening of more than 5 eV due to hybridization with the Ta band structure. Material effects are shown to contribute significantly to peak broadening in Ta-based sensors that are used to search for physics beyond the standard model in the EC decay of 7 Be, but they do not explain the full extent of observed broadening. Understanding these in-medium effects will be required for current- and future-generation experiments that observe low-energy radiation from the EC decay of implanted isotopes to evaluate potential limitations on the measurement sensitivity.

36 MATERIALS SCIENCE↗

Energetic Ion Interactions with the Galilean Satellites

The principal research tasks of this investigation are: (1) specification of the energetic (keV to MeV) ion environments upstream of the four Galilean satellites and (2) data analysis and numerical modeling of observed ion interactions with the satellites. Differential flux spectra are being compiled for the most abundant ions (protons, oxygen, and sulfur) from measurements at 20 keV to 100 MeV total energy by the Energetic Particle Detector (EPD) experiment and at higher ion energies by the Heavy Ion Counter (HIC) experiment. Runge-Kutta and other numerical techniques are used to propagate test particles sampled from the measured upstream spectra to the satellite surface or spacecraft through the local magnetic and corotational electric field environment of each satellite. Modeling of spatial variations in directional flux anisotropies measured during each close flyby provides limits on atomic charge states for heavy (O, S) magnetospheric ions and on internal or induced magnetic fields of the satellites. Validation of models for magnetic and electric field configurations then allows computation of rates for ion implantation, sputtering, and energy deposition into the satellite surfaces for further modeling of observable chemical changes induced by irradiation. Our ongoing work on production of oxidants and other secondary species by ice irradiation on Europa's surface has significant applications, already acknowledged in current literature, to astrobiological evolution. Finally, the work will improve understanding of energetic ion sources and sinks at the satellite orbits for improved modeling of magnetospheric transport processes. The scope of the research effort mainly includes data from the primary Galileo mission (1995-1997) but may also include some later data where directly relevant (e.g., comparison of J0 and I27 data for Io) to the primary mission objectives. Funding for this contract also includes partial support for our related education and public outreach activity, 'Interaction of Magnetospheric Particles Applied to Classroom Teaching (IMPACT).'

Cooper, John F.↗

Silicon strip defects and their impact on electrical performance of readout electronics

Abstract In preparation for the High Luminosity LHC (HL-LHC) runs, the ATLAS inner detector will be completely replaced with an all silicon Inner Tracker (ITk). Hybrid silicon pixel modules will be used for the innermost tracking layers, and silicon micro-strip detectors will be used the outer layers of the tracker. During the production of the detector, the sensors, readout electronics, and other components will undergo a series of quality control (QC) and quality assurance tests. Defects in the fabrication of the sensors will be flagged early in the manufacturer's and ATLAS QC tests. A study of the influence of sensor defects was performed to assess the characteristics of these defects in completed modules, and whether any defect posed a risk to the operation of the front-end readout electronics. All defects were found to have no impact on the performance of the front-end readout electronics for healthy amplifier channels, and defects that short the coupling between the strip implant and the metal readout electrode were only noticeable for strip leakage currents in excess of 250 nA, beyond the end-of-life currents expected for most sensors at the HL-LHC.

Instruments & Instrumentation↗

DUMAND Summer Workshop, University of California, La Jolla, Calif., July 24-September 2, 1978, Proceedings. Volume 3 - Oceanographic and ocean engineering studies

The DUMAND (Deep Underwater Muon and Neutrino Detector) array, a hexagon 800 m on a side, 673 m high, and consisting of 22,698 sensor modules, is designed to detect neutrinos in the TeV range, hadronic cascades, muons and Cerenkov radiation. Its engineering, signal processing, and logistic aspects are considered, as are its optical detection (photomultiplier tubes) system and electronics. Geological and bottom current surveys were made at two proposed sites for the array (the Maui and Keahole Point basins of Hawaii), and a study of the steady-state response of a sensor string to current drag forces is reported. Biological interference with the DUMAND array, including mechanical entanglement by large animals, bioluminescence, and especially biofouling are considered, as well as the deployment, implantment and maintenance of the array.

Wilkins, G.↗

Kinetics of hydrogen release from lunar soil

With increasing interest in a lunar base, there is a need for extensive examination of possible lunar resources. Hydrogen will be needed on a lunar base for many activities including providing fuel, making water, and serving as a reducing agent in the extraction of oxygen from its ores. Previous studies have shown the solar wind has implanted hydrogen in the lunar regolith and that hydrogen is present not only in the outer layer of soil but to considerable depths, depending on the sampling site. If this hydrogen is to be mined and used on the lunar surface, a number of questions need to be answered. How much energy must be expended in order to release the hydrogen from the soil. What temperatures must be attained, and how long must the soil be heated. This study was undertaken to provide answers to practical questions such as these. Hydrogen was determined using a Pyrolysis/GC technique in which hydrogen was released by heating the soil sample contained in a quartz tube in a resistance wire furnace, followed by separation and quantitative determination using a gas chromatograph with a helium ionization detector. Heating times and temperatures were varied, and particle separates were studied in addition to bulk soils. The typical sample size was 10 mg of lunar soil. All of the soils used were mature soils with similar hydrogen abundances. Pre-treatments with air and steam were used in an effort to find a more efficient way of releasing hydrogen.

Bustin, Roberta↗