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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
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NASA NTRS1983

Purely coronal flare-like variations

Quasiperiodic X-ray, UV, microwave, and metric-wave variations after a solar flare on November 6, 1980 are reported and analyzed, based on observational data from SMM (HXRBS, UVSP, HXIS), GOES-2, the 100-m radiotelescope at Bonn, and the Nancay radioheliograph. The maxima of the 13 brightenings observed are listed and characterized; a comparison is made with a 'normal' flare at 17:26 UT on the same day. The HXIS and UVSP data are discussed in terms of the physical properties, X-ray flux, O V flux, and H-alpha flux. The variations are found to be mainly thermal and purely coronal, with no chromospheric (H-alpha) participation (in contrast to the 17:26 flare). Since strong X-ray emissions were observed which should have involved the chromosphere through magnetic-field-line heat conduction, it is proposed that the variations wre produced ina coronal plasmoid magnetically separate from the chromosphere. A mechanism for the evolution of such a plasmoid from the upper loops of a giant X-ray arch is discussed. An iterative HXIS-image-deconvolution process is presented in an appendix.

Svestka, Z.↗
NASA NTRS1984

The atomic geometries of GaP(110) and ZnS(110) revisited - A structural ambiguity and its resolution

The atomic geometries of GaP(110) and ZnS(110) are reexamined using the R-factor minimization procedure, developed for GaAs(110) and previously applied to GaSb(110), ZnTe(110), InAs(110), and AlP(110), to analyze experimental elastic low-energy electron diffraction intensities. Unlike most of the earlier cases, both GaP(110) and ZnS(110) exhibit two distinct minimum-Rx structures which cannot be distinguished by analysis of the shapes of the intensity profiles alone. One region of best-fit structures exhibits top-layer displacements normal to the surface characterized by a small bond-length-conserving, top-layer rotation (omega aproximately 2-3 deg), a small relaxation of the top layer away from the surface, and a 10 percent expansion of the top-layer bond length. The other region of best-fit structures is the conventional one: nearly bond-length-conserving rotations of omega = 26-28 deg in the top layer and a small (approximately 0.1 A) contraction of the uppermost layer spacing. This ambiguity may be removed, however, by consideration of the integrated beam intensities. The conventional region of structural parameters provides a decisively better description of the relative magnitudes of the integrated beam intensities and hence is the preferred structure.

Duke, C. B.↗
NASA NTRS1984

Experiments with phase transitions at very high pressure

A diamond anvil cell is described which was developed for studying hydrogen and other materials to pressure above 100 PGa, including measurements at low temperature. The benefits of X-ray diffraction using synchrotron radiation and using a fixed anode source are examined as well as the optimization of X-ray diffraction at low temperature. A Ge diode detector was incorporated into apparatus for measuring optical absorption, reflectance, and fluorescence in order to enable luminescence studies and Raman spectra were obtained. Results of experiments on Si, Ge, GaP, InAs, hydrogen, benzene, nitrogen, graphite, and the superconductor CeCu2Si2 are given.

Spain, I. L.↗
NASA NTRS1985

Mark 4A project training evaluation

A participant evaluation of a Deep Space Network (DSN) is described. The Mark IVA project is an implementation to upgrade the tracking and data acquisition systems of the dSN. Approximately six hundred DSN operations and engineering maintenance personnel were surveyed. The survey obtained a convenience sample including trained people within the population in order to learn what training had taken place and to what effect. The survey questionnaire used modifications of standard rating scales to evaluate over one hundred items in four training dimensions. The scope of the evaluation included Mark IVA vendor training, a systems familiarization training seminar, engineering training classes, a on-the-job training. Measures of central tendency were made from participant rating responses. Chi square tests of statistical significance were performed on the data. The evaluation results indicated that the effects of different Mark INA training methods could be measured according to certain ratings of technical training effectiveness, and that the Mark IVA technical training has exhibited positive effects on the abilities of DSN personnel to operate and maintain new Mark IVA equipment systems.

Stephenson, S. N.↗
NASA NTRS1986

Arsenic-induced intensity oscillations in reflection high-energy electron diffraction measurements

A technique of arsenic-induced RHEED intensity oscillations has been used to accurately measure arsenic incorporation rates as a function of substrate temperature during the homoepitaxial growths of both GaAs and InAs by molecular beam epitaxy (MBE). Measurements were made at growth temperatures from 350 to 650 C and at arsenic fluxes of 0.1 to 10.0 monolayer/s. The method measures only the arsenic actually incorporated into the growing film and does not include the arsenic lost in splitting the arsenic tetramers or lost by evaporation from the sample.

Lewis, B. F.↗
NASA NTRS1986

Determination of carrier saturation velocity in high-performance In(y)Ga(1-y)As/Al(x)Ga(1-x)As modulation-doped field-effect transistors (with y between 0 and 0.2)

The relation between the intrinsic transconductance per unit gate width and the carrier saturation velocity, v(sat), is used to determine v(sat) for several high-performance pseudomorphic MODFET's with different InAs mole fractions (y). Measurements of In(y)Ga(1-y)As/AlGaAs MODFET's grown by MBE were found to give accurate v(sat) values at 77 K. Devices with y between 0 and 0.20 were shown to have higher v(sat) than conventional GaAs/AlGaAs MODFET's. An optimum y value for peak v(sat), which may optimize overall device performance, is expected.

Henderson, T. S.↗
NASA NTRS1989

Strain-Layer-Superlattice Light Modulator

Conceptual device combines resonant reflection and photovoltaic action to enable one light beam to impose spatial and temporal modulation on another light beam. Such spatial light modulator, with high speed and multiplicity of parallel signal channels, used in image processing or similar computation requiring high data-throughput rates. Microstructures of GaAs and InAs with multiple quantum wells and compositional superlattices grown by molecular-beam epitaxy. Enhanced electro-optical properties of arrangement of alternating layers enables writing light beam to modulate reading light beam.

Maserjian, Joseph↗
NASA NTRS1988

Contact regrowth technique for low-resistance nonalloyed contacts to the hot-electron transistor

A novel contact regrowth technique for the formation of extremely low nonalloyed ohmic contacts is reported. The successful demonstration of this technique is reported on an InGaAs/InAlAs hot-electron transistor device. For the investigated InGaAs-based structure, the regrown contacting scheme reported includes an In(0.53)Ga(0.47)As layer, an InAs/GaAs strained-layer superlattice, and an InAs cap, all heavily doped n type with Si. A very low specific contact resistance of 1.8 x 10 to the -7th ohm sq cm to the base layer is obtained. The higher current densities achieved in the transistor characteristics are in close agreement with calculations, and a contact model is presented explaining the poor results of conventional nonalloyed contacts.

Peng, C. K.↗
NASA NTRS1990

LWIR detector arrays based on nipi superlattices

It is proposed that nipi superlattice structures in InSb or InAs can be grown with modern techniques to achieve tunable and stable LWIR detectors with high performance. Key device and material considerations for the application of such nipi superlattices to LWIR detectors are examined. It is shown that practical absorption coefficients (of about 100/cm) can be achieved with high doping concentrations (of about 10 to the 19th/cu cm) achievable in these materials. In particular, recent delta doping techniques being developed in molecular beam epitaxy offer promise of higher doping concentrations, improved uniformity, and greater flexibility in tailoring the structures for optimum detector performance.

Maserjian, J.↗
NASA NTRS1990

A technique for detecting massive collapsed objects in the dark halo of the Galaxy

If the Galaxy possesses a dark halo of massive objects, they will produce small but potentially detectable distortions in the images of distant, extended objects due to gravitational lensing effects. An illustrative analytic and a more realistic numerical model are presented for calculating the number and angular sizes of these distortions, and a specific example of a digital filter is described which could be used for the identification of such distortions. The sensitivity of possible searches for the effect in the image of M31 and the Galactic Center are discussed in some detail. Simulated images of distortions of various angular sizes in these fields as they would be expected to appear in ground-based and Space Telescope CCD frames are presented. A Galactic halo of black holes such as that proposed by Lacey and Ostriker might well be detectable ina practically realizable experiment.

Turner, Edwin L.↗
NASA NTRS1991

Hole-Impeded-Doping-Superlattice LWIR Detectors

Hole-Impeded-Doping-Superlattice (HIDS) InAs devices proposed for use as photoconductive or photovoltaic detectors of radiation in long-wavelength infrared (LWIR) range of 8 to 17 micrometers. Array of HIDS devices fabricated on substrates GaAs or Si. Radiation incident on black surface, metal contacts for picture elements serve as reactors, effectively doubling optical path and thereby increasing absorption of photons. Photoconductive detector offers advantages of high gain and high impedance; photovoltaic detector offers lower noise and better interface to multiplexer readouts.

Maserjian, Joseph↗
NASA NTRS1990

Small band gap superlattices as intrinsic long wavelength infrared detector materials

Intrinsic long wavelength (lambda greater than or equal to 10 microns) infrared (IR) detectors are currently made from the alloy (Hg, Cd)Te. There is one parameter, the alloy composition, which can be varied to control the properties of this material. The parameter is chosen to set the band gap (cut-off wavelength). The (Hg, Cd)Te alloy has the zincblend crystal structure. Consequently, the electron and light-hole effective masses are essentially inversely proportional to the band gap. As a result, the electron and light-hole effective masses are very small (M sub(exp asterisk)/M sub o approx. M sub Ih/M sub o approx. less than 0.01) whereas the heavy-hole effective mass is ordinary size (M sub hh(exp asterisk)/M sub o approx. 0.4) for the alloy compositions required for intrinsic long wavelength IR detection. This combination of effective masses leads to rather easy tunneling and relatively large Auger transition rates. These are undesirable characteristics, which must be designed around, of an IR detector material. They follow directly from the fact that (Hg, Cd)Te has the zincblend crystal structure and a small band gap. In small band gap superlattices, such as HgTe/CdTe, In(As, Sb)/InSb and InAs/(Ga,In)Sb, the band gap is determined by the superlattice layer thicknesses as well as by the alloy composition (for superlattices containing an alloy). The effective masses are not directly related to the band gap and can be separately varied. In addition, both strain and quantum confinement can be used to split the light-hole band away from the valence band maximum. These band structure engineering options can be used to reduce tunneling probabilities and Auger transition rates compared with a small band gap zincblend structure material. Researchers discuss the different band structure engineering options for the various classes of small band gap superlattices.

Smith, Darryl L.↗
NASA NTRS1990

InAs/Ga(1-x)In(x)Sb superlattices for infrared detector applications

The successful growth of InAs/Ga(1-x)In(x)Sb superlattices and their optical and structural characterization is discussed. Samples were grown by molecular beam epitaxy at fairly low substrate temperatures (less than 400 C). Structural quality was assessed by reflection high energy electron difrraction, transmission electron microscopy, and x ray diffraction. Excellent structures were achieved for growth on thick, strain relaxed GaSb buffer layers on GaAs substrates, despite a residual threading dislocation density of 10(exp 9)cm(exp -2) originating at the GaSb/GaAs interface. Despite a lattice mismatch of 1.7 percent, InAs/Ga(0.75)In(0.25)Sb superlattices are observed to be free of misfit dislocations at the thicknesses examined here, owing to the close lattice match between the superlattice and GaSb, which evenly distributes compressive and tensile stresses between the InAs and Ga(0.75)In(0.25)Sb layers. Photoluminescence and photoconductivity measurements indicate that the energy gaps of the strain-layer superlattices are smaller than those of InAs/GaSb superlattices with the same layer thicknesses, and are in agreement with the theoretical predictions of Smith and Mailhiot. Energy gaps of 80 to 250 meV (15 to 5 microns) have been measured for InAs/Ga(0.75)In(0.25)Sb superlattices with 45 to 25 A/25 A layer thickness. Results demonstrate that far-infrared cutoff wavelengths are compatible with the thin superlattice layers required for strong optical absorption in type-II superlattices.

Miles, Richard H.↗
NASA NTRS1990

AlSb/InAs/AlSb quantum wells

Researchers studied the InAs/AlSb system recently, obtaining 12nm wide quantum wells with room temperature mobilities up to 28,000 cm(exp 2)/V center dot S and low-temperature mobilities up to 325,000 cm(exp 2)/V center dot S, both at high electron sheet concentrations in the 10(exp 12)/cm(exp 2) range (corresponding to volume concentrations in the 10(exp 18)/cm(exp 2) range). These wells were not intentionally doped; the combination of high carrier concentrations and high mobilities suggest that the electrons are due to not-intentional modulation doping by an unknown donor in the AlSb barriers, presumably a stoichiometric defect, like an antisite donor. Inasmuch as not intentionally doped bulk AlSb is semi-insulating, the donor must be a deep one, being ionized only by draining into the even deeper InAs quantum well. The excellent transport properties are confirmed by other observations, like excellent quantum Hall effect data, and the successful use of the quantum wells as superconductive weak links between Nb electrodes, with unprecendentedly high critical current densities. The system is promising for future field effect transistors (FETs), but many processing problems must first be solved. Although the researchers have achieved FETs, the results so far have not been competitive with GaAs FETs.

Kroemer, Herbert↗
NASA NTRS1991

Advanced transport design using multidisciplinary design optimization

This paper describes the results of the first implementation of multidisciplinary design optimisation (MDO) techniques by undergraduates ina design course. The objective of the work was to design a civilian transport aircraft of the Boeing 777 class. The first half of the two semester design course consisted of application of traditional sizing methods and techniques to form a baseline aircraft. MDO techniques were then applied to this baseline design. This paper describes the evolution of the design with special emphasis on the application of MDO techniques, and presents the results of four iterations through the design space. Minimization of take-off gross weight was the goal of the optimization process. The resultant aircraft derived from the MDO procedure weighed approximately 13,382 lbs (2.57 percent) less than the baseline aircraft.

Barnum, Jennifer↗
NASA NTRS1992

Growth of III-V films by control of MBE growth front stoichiometry

For the growth of strain-layer materials and high quality single and multiple quantum wells, the instantaneous control of growth front stoichiometry is critical. The process of the invention adjusts the offset or phase of molecular beam epitaxy (MBE) control shutters to program the instantaneous arrival or flux rate of In and As4 reactants to grow InAs. The interrupted growth of first In, then As4, is also a key feature.

Grunthaner, Frank J.↗
NASA NTRS1991

Non-volatile, high density, high speed, Micromagnet-Hall effect Random Access Memory (MHRAM)

The micromagnetic Hall effect random access memory (MHRAM) has the potential of replacing ROMs, EPROMs, EEPROMs, and SRAMs because of its ability to achieve non-volatility, radiation hardness, high density, and fast access times, simultaneously. Information is stored magnetically in small magnetic elements (micromagnets), allowing unlimited data retention time, unlimited numbers of rewrite cycles, and inherent radiation hardness and SEU immunity, making the MHRAM suitable for ground based as well as spaceflight applications. The MHRAM device design is not affected by areal property fluctuations in the micromagnet, so high operating margins and high yield can be achieved in large scale integrated circuit (IC) fabrication. The MHRAM has short access times (less than 100 nsec). Write access time is short because on-chip transistors are used to gate current quickly, and magnetization reversal in the micromagnet can occur in a matter of a few nanoseconds. Read access time is short because the high electron mobility sensor (InAs or InSb) produces a large signal voltage in response to the fringing magnetic field from the micromagnet. High storage density is achieved since a unit cell consists only of two transistors and one micromagnet Hall effect element. By comparison, a DRAM unit cell has one transistor and one capacitor, and a SRAM unit cell has six transistors.

Wu, Jiin C.↗
NASA NTRS1992

dc and microwave performance of a 0.1-micron gate InAs/In(0.52)Al(0.48)As MODFET

The performance characteristics of 0.1-micron gate InAs/In(0.52)Al(0.48)As MODFETs grown by molecular beam epitaxy are measured and analyzed. The transistors are characterized by measured g sub m (max) = 840 mS/mm, f sub T = 128 GHz, and a very high current carrying capability, e.g., I sub dss = 934 mA/mm at V sub gs = 0.4 V and V sub ds = 2.7 V. The value of f sub T is estimated from extrapolation of the current gain (H21) at a -6-dB/octave rolloff. This is the first report on the microwave characteristics of an InAs-channel MODFET and establishes the superiority of this heterostructure system.

Yang, D.↗