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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS2009

Complementary Paired G4FETs as Voltage-Controlled NDR Device

It is possible to synthesize a voltage-controlled negative-differential-resistance (NDR) device or circuit by use of a pair of complementary G4FETs (four-gate field-effect transistors). [For more information about G4FETs, please see the immediately preceding article]. As shown in Figure 1, the present voltage-controlled NDR device or circuit is an updated version of a prior NDR device or circuit, known as a lambda diode, that contains a pair of complementary junction field-effect transistors (JFETs). (The lambda diode is so named because its current-versus- voltage plot bears some resemblance to an upper-case lambda.) The present version can be derived from the prior version by substituting G4FETs for the JFETs and connecting both JFET gates of each G4FET together. The front gate terminals of the G4FETs constitute additional terminals (that is, terminals not available in the older JFET version) to which one can apply control voltages VN and VP. Circuits in which NDR devices have been used include (1) Schmitt triggers and (2) oscillators containing inductance/ capacitance (LC) resonant circuits. Figure 2 depicts such circuits containing G4FET NDR devices like that of Figure 1. In the Schmitt trigger shown here, the G4FET NDR is loaded with an ordinary inversion-mode, p-channel, metal oxide/semiconductor field-effect transistor (inversion-mode PMOSFET), the VN terminal of the G4FET NDR device is used as an input terminal, and the input terminals of the PMOSFET and the G4FET NDR device are connected. VP can be used as an extra control voltage (that is, a control voltage not available in a typical prior Schmitt trigger) for adjusting the pinch-off voltage of the p-channel G4FET and thereby adjusting the trigger-voltage window. In the oscillator, a G4FET NDR device is loaded with a conventional LC tank circuit. As in other LC NDR oscillators, oscillation occurs because the NDR counteracts the resistance in the tank circuit. The advantage of this G4FET-NDR LC oscillator over a conventional LC NDR oscillator is that one can apply a time-varying signal to one of the extra control input terminals (VN or VP) to modulate the conductance of the NDR device and thereby amplitude-modulate the output signal.

Mojarradi, Mohammad↗
NASA NTRS2005

High Power Laser Diode Array Qualification and Guidelines for Space Flight Environments

Semiconductor laser diodes emit coherent light by simulated emission generated inside the cavity formed by the cleaved end facets of a slab of semiconductor that is typically less than a millimeter in any dimension for single emitters. The diode is pumped by current injection in the p-n junction through the metallic contacts. Laser diodes emitting in the range of 0.8 micron to 1.06 micron have a wide variety of applications from pumping erbium doped fiber amplifiers, dual-clad fiber lasers, solid-state lasers used in telecom, aerospace, military, medical purposes and all the way to CD players, laser printers and other consumer and industrial products. Laser diode bars have many single emitters side by side and spaced approximately .5 mm on a single slab of semiconductor material approximately .5 mm x 10 mm. The individual emitters are connected in parallel maintaining the voltage at -2V but increasing the current to ~50-100A/bar. Stacking these laser diode bars in multiple layers, 2 to 20+ high, yields high power laser diode arrays capable of emitting several hundreds of Watts. Electrically the bars are wired in series increasing the voltage by 2V/bar but maintaining the total current at ~50-100A. These arrays are one of the enabling technologies for efficient, high power solid-state lasers. Traditionally these arrays are operated in QCW (Quasi CW) mode with pulse widths ~10-200 (mu)s and with repetition rates of ~10-200Hz. In QCW mode the wavelength and the output power of the laser reaches steady-state but the temperature does not. The advantage is a substantially higher output power than in CW mode, where the output power would be limited by the internal heating and hence the thermal and heat sinking properties of the device. The down side is a much higher thermal induced mechanical stress caused by the constant heating and cooling cycle inherent to the QCW mode.

Eegholm, Niels↗
NASA NTRS1973

Investigation of the dielectric waveguide modes in homostructure GaAs laser.

The investigation of the propagation modes in a homostructure GaAs laser and particularly of the spatial displacement of the TE and TM mode is reported. For this investigation, a homostructure GaAs laser was operated in an external optical cavity and experiments were performed where the resonator alignment was varied to displace the image of the p-n junction, formed in the optical cavity, from the p-n junction of the laser diode. The peak power of the laser radiation (which is in the TEM (sub 00) mode), the delay, the optical waveform, and the polarization were measured at room temperature for different cavity alignments. For the evaluation of the propagation modes the experimental results are correlated with the computed field distributions of the modes in a three-layer dielectric waveguide.

Philipp-Rutz, E. M.↗
NASA NTRS1983

Development and fabrication of a high current, fast recovery power diode

A high voltage (VR = 1200 V), high current (IF = 150 A), fast recovery ( 700 ns) and low forward voltage drop ( 1.5 V) silicon rectifier was designed and the process developed for its fabrication. For maximum purity, uniformity and material characteristic stability, neutron transmutation n-type doped float zone silicon is used. The design features a hexagonal chip for maximum area utilization of space available in the DO-8 diode package, PIN diffused junction structure with deep diffused D(+) anode and a shallow high concentration n(+) cathode. With the high temperature glass passivated positive bevel mesa junction termination, the achieved blocking voltage is close to the theoretical limit of the starting material. Gold diffusion is used to control the lifetime and the resulting effect on switching speed and forward voltage tradeoff. For solder reflow assembly, trimetal (Al-Ti-Ni) contacts are used. The required major device electrical characteristics were achieved. Due to the tradeoff nature of forward voltage drop and reverse recovery time, a compromise was reached for these values.

Berman, A. H.↗
NASA NTRS1995

An X-Band Mixer Engineered for 77 K Operation

An X-band Si-diode singly balanced mixer developed specifically for cryogenic operation is presented. In order to reduce thermal demands on a mechanical cooler, the mixer was designed to operate with a minimum of local oscillator (LO) power. That is, since the LO had to be cooled to reduce phase noise, it was desirable to minimize the LO drive. Novel embedding circuit strategy was responsible for nearly theoretical performance. The signal-matching circuit simultaneously provided a reactive termination to the image, sum, and first, second, and third LO harmonic frequencies. A conversion loss of 3.2 dB at 77 K with an LO drive of +1 dBm was measured. This loss included IF filter, dc block, and hybrid coupler losses. Mixer conversion loss is shown to be consistent with the theoretical performance limit expected from the intrinsic diode. The relationship among junction capacitance, flat-band potential, and conversion loss is examined.

Romanofsky, Robert R.↗
NASA NTRS1984

Deep diode arrays for X-ray detection

Temperature gradient zone melting process was used to form p-n junctions in bulk of high purity silicon wafers. These diodes were patterned to form arrays for X-ray spectrometers. The whole fabrication processes for these X-ray detectors are reviewed in detail. The p-n junctions were evaluated by (1) the dark diode I-V measurements, (2) the diode C sub I - V measurements, and (3) the MOS C-V measurements. The results showed that these junctions were linearly graded in charge distribution with low reverse bias leakage current flowing through them (few nA at -10 volts). The X-ray detection experiments showed that an FWHM of 500 eV was obtained from these diodes with a small bias of just -5 volts (for X-ray source Fe55). A theoretical model was proposed to explain the extra peaks found in the energy spectra and a very interesting point - cross talk effect was pointed out. This might be a solution to the problem of making really high resolution X-ray spectrometers.

Zemel, J. N.↗
NASA NTRS1977

Application of the SEM to the measurement of solar cell parameters

Techniques are described which make use of the SEM to measure the minority carrier diffusion length and the metallurgical junction depth in silicon solar cells. The former technique permits the measurement of the true bulk diffusion length through the application of highly doped field layers to the back surfaces of the cells being investigated. It is shown that the secondary emission contrast observed in the SEM on a reverse-biased diode can depict the location of the metallurgical junction if the diode has been prepared with the proper beveled geometry. The SEM provides the required contrast and the option of high magnification, permitting the measurement of extremely shallow junction depths.

Weizer, V. G.↗
NASA NTRS1977

Application of the SEM to the measurement of solar cell parameters

A pair of techniques are described which make use of the SEM to measure, respectively, the minority carrier diffusion length and the metallurgical junction depth in silicon solar cells. The former technique permits the measurement of the true bulk diffusion length through the application of highly doped field layers to the back surfaces of the cells being investigated. The technique yields an absolute value of the diffusion length from a knowledge of the collected fraction of the injected carriers and the cell thickness. It is shown that the secondary emission contrast observed in the SEM on a reverse-biased diode can depict the location of the metallurgical junction if the diode has been prepared with the proper beveled geometry. The SEM provides the required contrast and the option of high magnification, permitting the measurement of extremely shallow junction depths.

Weizer, V. G.↗
NASA NTRS2013

RF Reference Switch for Spaceflight Radiometer Calibration

The goal of this technology is to provide improved calibration and measurement sensitivity to the Soil Moisture Active Passive Mission (SMAP) radiometer. While RF switches have been used in the past to calibrate microwave radiometers, the switch used on SMAP employs several techniques uniquely tailored to the instrument requirements and passive remote-sensing in general to improve radiometer performance. Measurement error and sensitivity are improved by employing techniques to reduce thermal gradients within the device, reduce insertion loss during antenna observations, increase insertion loss temporal stability, and increase rejection of radar and RFI (radio-frequency interference) signals during calibration. The two legs of the single-pole double-throw reference switch employ three PIN diodes per leg in a parallel-shunt configuration to minimize insertion loss and increase stability while exceeding rejection requirements at 1,413 MHz. The high-speed packaged diodes are selected to minimize junction capacitance and resistance while ensuring the parallel devices have very similar I-V curves. Switch rejection is improved by adding high-impedance quarter-wave tapers before and after the diodes, along with replacing the ground via of one diode per leg with an open circuit stub. Errors due to thermal gradients in the switch are reduced by embedding the 50-ohm reference load within the switch, along with using a 0.25-in. (approximately equal to 0.6-cm) aluminum prebacked substrate. Previous spaceflight microwave radiometers did not embed the reference load and thermocouple directly within the calibration switch. In doing so, the SMAP switch reduces error caused by thermal gradients between the load and switch. Thermal issues are further reduced by moving the custom, highspeed regulated driver circuit to a physically separate PWB (printed wiring board). Regarding RF performance, previous spaceflight reference switches have not employed high-impedance tapers to improve rejection. The use of open-circuit stubs instead of a via to provide an improved RF short is unique to this design. The stubs are easily tunable to provide high rejection at specific frequencies while maintaining very low insertion loss in-band.

Knuble, Joseph↗
NASA NTRS1975

Epitaxial solar cells fabrication

Silicon epitaxy has been studied for the fabrication of solar cell structures, with the intent of optimizing efficiency while maintaining suitability for space applications. SiH2CL2 yielded good quality layers and junctions with reproducible impurity profiles. Diode characteristics and lifetimes in the epitaxial layers were investigated as a function of epitaxial growth conditions and doping profile, as was the effect of substrates and epitaxial post-gettering on lifetime. The pyrolytic decomposition of SiH4 was also used in the epitaxial formation of highly doped junction layers on bulk Si wafers. The effects of junction layer thickness and bulk background doping level on cell performance, in particular, open-circuit voltage, were investigated. The most successful solar cells were fabricated with SiH2 CL2 to grow p/n layers on n(+) substrates. The best performance was obtained from a p(+)/p/n/n(+) structure grown with an exponential grade in the n-base layer.

Daiello, R. V.↗
NASA NTRS1986

Silicon controlled rectifier polyphase bridge inverter commutated with gate-turn-off thyristor

A polyphase SCR inverter (10) having N switching poles, each comprised of two SCR switches (1A, 1B; 2A, 2B . . . NA, NB) and two diodes (D1B; D1B; D2A, D2B . . . DNA, DNB) in series opposition with saturable reactors (L1A, L1B; L2A, L2B . . . LNA, LNB) connecting the junctions between the SCR switches and diodes to an output terminal (1, 2 . . . 3) is commutated with only one GTO thyristor (16) connected between the common negative terminal of a dc source and a tap of a series inductor (14) connected to the positive terminal of the dc source. A clamp winding (22) and diode (24) are provided, as is a snubber (18) which may have its capacitance (c) sized for maximum load current divided into a plurality of capacitors (C.sub.1, C.sub.2 . . . C.sub.N), each in series with an SCR switch S.sub.1, S.sub.2 . . . S.sub.N). The total capacitance may be selected by activating selected switches as a function of load current. A resistor 28 and SCR switch 26 shunt reverse current when the load acts as a generator, such as a motor while braking.

Edwards, Dean B.↗
NASA NTRS1988

Aging behavior of Au-based ohmic contacts to GaAs

Gold based alloys, commonly used as ohmic contacts for solar cells, are known to react readily with GaAs. It is shown that the contact interaction with the underlying GaAs can continue even at room temperature upon aging, altering both the electrical characteristics of the contacts and the nearby pn junction. Au-Ge-Ni as-deposited (no heat treatment) contacts made to thin emitter (0.15 micrometer) GaAs diodes have shown severe shunting of the pn junction upon aging for several months at room temperature. The heat-treated contacts, despite showing degradation in contact resistance did not affect the underlying pn junction. Au-Zn-Au contacts to p-GaAs emitter (0.2 micrometer) diodes, however, showed slight improvement in contact resistance upon 200 C isothermal annealing for several months, without degrading the pn junction. The effect of aging on electrical characteristics of the as-deposited and heat-treated contacts and the nearby pn junction, as well as on the surface morphology of the contacts are presented.

Fatemi, Navid S.↗
NASA NTRS2010

Quad-Chip Double-Balanced Frequency Tripler

Solid-state frequency multipliers are used to produce tunable broadband sources at millimeter and submillimeter wavelengths. The maximum power produced by a single chip is limited by the electrical breakdown of the semiconductor and by the thermal management properties of the chip. The solution is to split the drive power to a frequency tripler using waveguides to divide the power among four chips, then recombine the output power from the four chips back into a single waveguide. To achieve this, a waveguide branchline quadrature hybrid coupler splits a 100-GHz input signal into two paths with a 90 relative phase shift. These two paths are split again by a pair of waveguide Y-junctions. The signals from the four outputs of the Y-junctions are tripled in frequency using balanced Schottky diode frequency triplers before being recombined with another pair of Y-junctions. A final waveguide branchline quadrature hybrid coupler completes the combination. Using four chips instead of one enables using four-times higher power input, and produces a nearly four-fold power output as compared to using a single chip. The phase shifts introduced by the quadrature hybrid couplers provide isolation for the input and output waveguides, effectively eliminating standing waves between it and surrounding components. This is accomplished without introducing the high losses and expense of ferrite isolators. A practical use of this technology is to drive local oscillators as was demonstrated around 300 GHz for a heterodyne spectrometer operating in the 2-3-THz band. Heterodyne spectroscopy in this frequency band is especially valuable for astrophysics due to the presence of a very large number of molecular spectral lines. Besides high-resolution radar and spectrographic screening applications, this technology could also be useful for laboratory spectroscopy.

Lin, Robert H.↗
NASA NTRS1989

Aging behavior of Au-based ohmic contacts to GaAs

Gold based alloys, commonly used as ohmic contacts for solar cells, are known to react readily with GaAs. It is shown that the contact interaction with the underlying GaAs can continue even at room temperature upon aging, altering both the electrical characteristics of the contacts and the nearby pn junction. Au-Ge-Ni as-deposited (no heat-treatment) contacts made to thin emitter (0.15 microns) GaAs diodes have shown severe shunting of the pn junction upon aging for several months at room temperature. The heat-treated contacts, despite showing degradation in contact resistance, did not affect the underlying pn junction. Au-Zn-Au contacts to p-GaAs emitter (0.2 microns) diodes, however, showed slight improvement in contact resistance upon 200 C isothermal annealing for several months, without degrading the pn junction. The effect of aging on electrical characteristics of the as-deposited and heat-treated contacts and the nearby pn junction, as well as on the surface morphology of the contacts are presented.

Fatemi, Navid S.↗
NASA NTRS1981

Trimming epitaxial GaAs Schottky-diode parameters via anodic oxidation

Present day receivers operating at millimeter and sub-millimeter wavelengths most often rely, for their first mixers, on Schottky-barrier diodes formed on epitaxial GaAs. Crucial parameters for these diodes are breakdown voltage, series resistance, junction capacitance and forward conduction mechanism. Some of these are improved, others impaired, by change of epitaxy thickness. This paper describes experience with optimizing GaAs Schottky-diode parameters by anodic oxidation thinning of GaAs epitaxial layers. Monitoring of breakdown voltage of epitaxial GaAs in anodic oxidation solution provides indication of when thinning should be stopped in subjection to the breakdown voltage specification of diodes to be made from the material. Mixer and frequency-multiplier performance superior to any previously reported have been achieved by this technique.

Siegel, C. M.↗
NASA NTRS1984

The integration of bypass diodes with terrestrial photovoltaic modules and arrays

Bypass diodes are often required to limit the potential for reverse voltage 'hot-spot' heating in high voltage arrays or in arrays that undergo periodic operation near the short-circuit point. In addition, when properly applied, bypass diodes can minimize the effect of shadowing and various internal module failures on the array energy output. This paper discusses the mechanical and electrical integration of bypass diodes beginning with the array-level considerations which influence the selection of an implementation approach. Concepts for the mounting of these diodes, both internally within the module encapsulant and externally to the exposed rear surface of the module, are described. Factors affecting the reliability of bypass diodes, including the control of junction temperature through adequate heat sinking and the derating of reverse voltage, are discussed.

Shepard, N. F., Jr.↗
NASA NTRS1987

Shallow n(+) diffusion into InP by an open-tube diffusion technique

Very shallow n(+) layers have been obtained in InP by using gallium sulfide as a source for sulfur diffusion, and chemically vapor-deposited SiO2 as a cap. Diffusions were carried out from 585 to 725 C in an open-tube system with a nitrogen ambient. The doping profile of sulfur in InP is estimated to be of the complementary error function type with a surface concentration of 5.6 x 10 to the 18th/cc and a diffusion constant of 1.1 x 10 to the -14th sq cm/s at 670 C. Diodes made on n(+)-p junctions obtained by this diffusion technique show ideality factors close to unity and saturation current densities as low as 3.4 x 10 to the -15th A/sq cm, signifying the presence of a defect-free junction. These diffusions, with junction depths in the 400-700 A range, are ideal for solar cell applications.

Ghandhi, Sorab K.↗
NASA NTRS1995

A 32-bit Ultrafast Parallel Correlator using Resonant Tunneling Devices

An ultrafast 32-bit pipeline correlator has been implemented using resonant tunneling diodes (RTD) and hetero-junction bipolar transistors (HBT). The negative differential resistance (NDR) characteristics of RTD's is the basis of logic gates with the self-latching property that eliminates pipeline area and delay overheads which limit throughput in conventional technologies. The circuit topology also allows threshold logic functions such as minority/majority to be implemented in a compact manner resulting in reduction of the overall complexity and delay of arbitrary logic circuits. The parallel correlator is an essential component in code division multi-access (CDMA) transceivers used for the continuous calculation of correlation between an incoming data stream and a PN sequence. Simulation results show that a nano-pipelined correlator can provide and effective throughput of one 32-bit correlation every 100 picoseconds, using minimal hardware, with a power dissipation of 1.5 watts. RTD plus HBT based logic gates have been fabricated and the RTD plus HBT based correlator is compared with state of the art complementary metal oxide semiconductor (CMOS) implementations.

Kulkarni, Shriram↗