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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Precision measurement of the $Ξ^0_b$ baryon lifetime

A sample of 𝑝⁢𝑝 collision data, corresponding to an integrated luminosity of 5.4 fb −1 and collected by the LHCb experiment during LHC Run 2, is used to measure the ratio of the lifetime of the $Ξ^0_b$ baryon to that of the $Λ^0_b$ baryon, 𝑟 𝜏 $≡$ $𝜏_{Ξ^0_b}$$/𝜏_{Λ^0_b}$. The value 𝑟$^{\textrm{Run 2}}_𝜏$ =1.004 ± 0.009 ± 0.006 is obtained, where the first uncertainty is statistical and the second systematic. This value is averaged with the corresponding value from Run 1 to obtain 𝑟 𝜏 =1.004 ± 0.008 ± 0.005. Multiplying by the known value of the $Λ^0_b$ lifetime yields $𝜏_{Ξ^0_b}$ = 1.475 ± 0.012 ± 0.008 ± 0.009 ps, where the last uncertainty is due to the limited knowledge of the $Λ^0_b$ lifetime. This measurement improves the precision of the current world average of the $Ξ^0_b$ lifetime by about a factor of two, and is in good agreement with the most recent theoretical predictions.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2025

Real-Time Lifetime Prediction of Semiconductor Devices Using Hardware-in-the-Loop

This paper presents a unique approach to enable real-time lifespan prediction of semiconductor power modules using a Hardware-in-the-Loop (HIL) system. By integrating the module's overall loss characteristics-specifically switching and conduction losses-with a thermoelectric model of the thermal management system, this research demonstrates that the model can dynamically estimates the junction temperature profile of the semiconductor devices in response to a changing torque demand profile for the motor drive system. This capability enables continuous monitoring of the module's operational time and cumulative stress induced on the devices to compute accumulated remaining lifetime or time-to-failure (TTF). This study provides an architectural framework for the HIL system with high-fidelity component models of multiple physical domains, allowing simulation of dynamic behaviors of a closely-coupled motor drive system. The advanced real-time computation and measurement functionalities of the HIL system allow for both dynamic lifetime calculations based on simulated data and aggregate lifetime predictions utilizing historical data. Moreover, this paper details an algorithm that not only computes cumulative damage but also synthesizes these data into a comprehensive aggregated lifetime metric. This methodology can enhance the maintenance scheduling strategies and operational reliability of semiconductor devices in critical applications, ultimately extending their service life while optimizing performance.

hardware-in-the-loop (HIL)↗
DOE OSTI2024

Evaluating Microchannel Heat Exchanger Lifetime for Concentrating Solar Power Applications FY24Q4 (RPPR-1)

Microchannel heat exchanger technology is being pursued for next generation CSP concepts for primary power cycle heat addition and power cycle heat recuperation due to the high heat transfer coefficients and pressure containment advantages of small sCO 2 channels. The economics of future CSP plants as dictated by the SETO 2020 or 2030 targets depend on a heat exchanger with a 30-year lifetime (resisting creep, fatigue, corrosion, erosion) and operational characteristics such as fast ramping and the ability to withstand thermal shock. However, the lifetime and operational limits of microchannel heat exchangers operating at high-temperatures, particularly those constructed from high-nickel alloys, are not well known. This uncertainty has resulted in heat exchanger vendors not being able to accurately forecast heat exchanger lifetime as required by customers, specify operational limits as required by process engineers to prevent premature heat exchanger failure, or overdesign heat exchanger which leads to higher cost than necessary. Our goal is to evaluate heat exchanger lifetime and operational limits for the manufacturing and prototype design for next-generation CSP heat exchanger technology through a combination of collecting experimental data and modeling studies.

14 SOLAR ENERGY↗
DOE OSTI2025

Predicting Cislunar Orbit Lifetimes from Initial Orbital Elements

The volume of space between Earth’s geosynchronous orbit out to the Moon’s sphere of influence, including the lunar Lagrange points, is crucial for the successful planning and execution of space missions, but not fully understood dynamically. This region is a part of cislunar space. Trajectories through cislunar space are influenced by the gravitational forces of the Sun, Earth, Moon, and other Solar System planets leading to typically unpredictable and chaotic trajectory behavior. It is therefore difficult to predict the stability of an trajectory through cislunar space from a set of initial conditions or orbital elements. We simulate one million cislunar orbits to train a self-organizing map (SOM) to cluster the trajectories and orbits into families based on how long they remain stable within the cislunar space. Using the trained SOM, we are able to predict the stable lifetime of a trajectory through cislunar space from a set of initial orbital elements to within an accuracy of 10% for 8% of simulated trajectories and within 50% for 43% of the simulated trajectories. Clustering in the SOM suggests that a variety of trajectory morphologies have similar lifetimes. Once trained, the SOM can predict the stable lifetime of a given cislunar trajectory within milliseconds. The methods developed in this work enable the rapid identification of stable cislunar orbits and trajectories that could be used for future space exploration. Moreover, the developed SOM method can generate orbital and trajectory lifetime estimates from minimal observational data, such as a single two line element, making it useful for early warning systems and large-scale sensor network operations.

79 ASTRONOMY AND ASTROPHYSICS↗
NASA NTRS1974

Laser measurements of the radiative lifetime of the B state of CN

A turnable dye laser was used to measure the radiative lifetime of the individual rotational levels of the B2 Sigma (+) state of CN. The radiative lifetime of the unperturbed rotational levels is 65.6 plus or minus 1.0 nsec. A longer radiative lifetime of 72 plus or minus 1 nsec is observed for the Kaon prime = 4 level of the B state. The measured values of the perturbed and unperturbed levels support the longer lifetimes for the A2 meson pion state of CN. The quenching cross section of the B2 Sigma state of CN is 41 plus or minus 20 Angstroms squared and is independent of the rotational energy of the B state.

Jackson, W. M.↗
NASA NTRS1975

Lifetimes for OH and OD electronic states with resonance transitions in the region between 1700 and 1950 A

The upper states of the OH and OD bands in the region between 1700 and 1950 A have been studied with a phase-shift radiative lifetime apparatus. Lifetimes varying from 1.8 to 2.9 ns have been found. Lifetimes for OH and OD are essentially the same, indicating that the upper states are likely to be depopulated via purely radiative processes under the present experimental conditions. Lifetimes have also been obtained for the C(2)Sigma(+) - A(2)Sigma(+) transition in OH and OD. These results are consistent with the preliminary analysis of Pryce (private communication) that the bands between 1700 and 1950 A in OH are partly due to the C(2)Sigma(+) - X(2)Pi sub i transition.

Smith, W. H.↗
NASA NTRS1978

Characterization of nonideal silicon in terms of lifetime and diffusion length

Experimental methods have been evaluated for the determination of lifetime and diffusion length in silicon intentionally doped with potentially lifetime-degrading impurities which may be present in low-cost silicon intended for use in terrestrial flat-plate arrays. Results obtained with these methods have been compared for mutual consistency. The effects of a number of impurities on bulk lifetime were determined from steady-state photoconductivity, and solar cells fabricated from this material were characterized in terms of diffusion length using a penetrating light technique. Comparison was made with results obtained by others using photoconductivity decay. General agreement was found in terms of the hierachy of impurities to which the lifetime is sensitive. The utility of the steady-state photoconductivity method is established even in the presence of considerable trapping.

Othmer, S.↗
NASA NTRS1979

Residence lifetimes of 1.79- to 2.15-MeV protons in the equatorial region of the Jovian magnetosphere

The magnitude of the strong flow of 1.79-2.15 MeV protons away from the Jovian magnetic equator is used to estimate the residence lifetimes of these protons in the equatorial source region. The lifetime is approximately 1.2 x 10 to the 5th/(R - 5.8)-squared sec, where R is distance in Jovian radii from Jupiter's center to the equatorial region of interest. At Europa and Ganymede (but not at Io) this lifetime is 1-2 orders of magnitude shorter than sweepup lifetimes by the moons. The fluxes of these protons, integrated over the observed range from 6 to 40 Jovian radii, amount to 3 x 10 to the 23rd particles per second, per degree of longitude and carry away about 9 x 10 to the 17th ergs per second per degree.

Northrop, T. G.↗
NASA NTRS1981

Analysis of the photo voltage decay /PVD/ method for measuring minority carrier lifetimes in P-N junction solar cells

The photo voltage decay (PVD) method for the measurement of minority carrier lifetimes in P-N junction solar cells with cell thickness comparable to or even less than the minority carrier diffusion length is examined. The method involves the generation of free carriers in the quasi-neutral bulk material by flashes of light and the monitoring of the subsequent decay of the induced open-circuit voltages as the carriers recombine, which is dependent on minority carrier recombination lifetime. It is shown that the voltage versus time curve for an ordinary solar cell (N(+)-P junction) is proportional to the inverse minority carrier lifetime plus a factor expressing the ratio of diffusion length to cell thickness. In the case of an ideal back-surface-field cell (N(+)-P-P(+) junction) however, the slope is directly proportional to the inverse minority carrier lifetime. It is noted that since most BSF cells are not ideal, possessing a sizable back surface recombination velocity, the PVD measurements must be treated with caution and supplemented with other nonstationary methods.

Von Roos, O.↗
NASA NTRS1983

On the method of positron lifetime measurement

A fast-slow coincidence system was constructed for the measurement of positron lifetimes in material. The time resolution of this system was 270 ps for the (60)Co gamma rays. Positron lifetime spectra for 14 kinds of alkali halides were measured with this system. Two lifetime components and their intensities were derived from analyses of the lifetime spectra.

Nishiyama, F.↗
NASA NTRS1984

Lifetimes in Si CVD-epitaxial and other layers determined by spectral LBIC

In an effort to evaluate the minority carrier lifetimes in CVD-epitaxially grown layers in their dependence on the CVD process variables, the absolute spectral LBIC method was found to be the only available method capable of yielding both lifetime and surface recombination velocity in layers, independent of the resistivity of this layer or that of the substrate, as long as they are separated by a pn-junction. With this method, it was not only possible to determine the minority carrier lifetimes in as-grown epi-layers, but to observe their changes through the device fabrication processes. In addition, it was possible for the first time to determine the lifetimes in the alloy-regrowth p(+) layers of base high/low junction structures.

Wolf, M.↗
NASA NTRS1988

Index grating lifetime in photorefractive GaAs

The index grating lifetime in liquid encapsulated Czochralski-grown undoped semi-insulating GaAs was measured using a beam coupling technique. The largest lifetime measure was about 8 s under a read beam intensity of 0.7 mW/sq cm with the grating periodicity being 0.63 microns. The measured value decreases to milliseconds as the read beam intensity and the grating periodicity increase to about 10 mW/sq cm and 4 microns, respectively. This range of grating lifetime in this material is adequate for its use in real-time spatial light modulators, reconfigurable beam steering devices, and dynamic memory elements, for optical computing. In addition, the results suggest that the lifetime is sensitive to residual imperfections in the crystal.

Cheng, Li-Jen↗
NASA NTRS1988

Analysis of positron lifetime spectra in polymers

A new procedure for analyzing multicomponent positron lifetime spectra in polymers was developed. It requires initial estimates of the lifetimes and the intensities of various components, which are readily obtainable by a standard spectrum stripping process. These initial estimates, after convolution with the timing system resolution function, are then used as the inputs for a nonlinear least squares analysis to compute the estimates that conform to a global error minimization criterion. The convolution integral uses the full experimental resolution function, in contrast to the previous studies where analytical approximations of it were utilized. These concepts were incorporated into a generalized Computer Program for Analyzing Positron Lifetime Spectra (PAPLS) in polymers. Its validity was tested using several artificially generated data sets. These data sets were also analyzed using the widely used POSITRONFIT program. In almost all cases, the PAPLS program gives closer fit to the input values. The new procedure was applied to the analysis of several lifetime spectra measured in metal ion containing Epon-828 samples. The results are described.

Singh, Jag J.↗
NASA NTRS1991

Lifetime measurement of a collision complex using ion cyclotron double resonance - H2C6N2(+)

In the ion-molecule reaction between HC3N(+) and HC3N, the lifetime of the collision complex (H2C6N2+)-asterisk was long enough that ion cyclotron double-resonance techniques could be used to probe the distribution of the lifetimes of the collision complex. The mean lifetime of the collision complex at room temperature was measured as 180 microsec with a distribution ranging from 60 to 260 microsec as measured at the half-heights in the distribution. Lifetimes of this magnitude with respect to unimolecular dissociation allow for some stabilization of the collision complex by the slower process of infrared photon emission.

Anicich, Vincent G.↗
NASA NTRS1991

Positron lifetime measurements in chiral nematic liquid crystals

Positron lifetimes in the isotropic phases of chiral nematic liquid crystal formulations and their mixtures up to the racemic level were measured. The lifetime spectra for all liquid crystal systems were analyzed into three components. Although the individual spectra in the left- and right-handed components are identical, their racemic mixtures exhibit much larger orthopositronium lifetimes; these larger lifetimes indicate the presence of larger microvoids. This result is consistent with the reportedly higher thermodynamic stability and color play range in the racemic mixtures of chiral nematic liquid crystals.

Singh, Jag J.↗
NASA NTRS1990

Tropospheric hydroxyl concentrations and the lifetimes of hydrochlorofluorocarbons (HCFCs)

Three dimensional fields of modeled tropospheric OH concentrations are used to calculate lifetimes against destruction by OH for many hydrogenated halocarbons, including the CFC alternatives. The OH fields were taken from a 3-D chemical transport model (Spivakovsky et al. 1989) that accurately simulates the global measurements of methyl chloroform (derived lifetime of 5.5 years). The lifetimes of various hydro-halocarbons are shown to be insensitive to possible spatial variations and seasonal cycles. It is possible to scale the HCFC lifetimes to that of methyl chloroform or methane by using the ratio of the rate coefficients for reaction with OH at an appropriate temperature, about 277 K.

Prather, Michael J.↗
NASA NTRS1991

Minority carrier lifetime in indium phosphide

Transient photoluminescence is used to measure the minority carrier lifetime on n-type and p-type InP wafers. The measurements show that unprocessed InP wafers have very high minority carrier lifetimes. Lifetimes of 200 ns and 700 ns were observed for lightly-doped p- and n-type material respectively. Lifetimes over 5 ns were found in heavily doped n-type material.

Jenkins, Phillip↗
NASA NTRS1993

SIRTF thermal design modifications to increase lifetime

An effort was made to increase the predicted lifetime of the SIRTF dewar by lowering the exterior shell temperature, increasing the radiated energy from the vapor cooled shields and reconfiguring the vapor cooled shields. The lifetime increases can be used to increase the scientific return from the mission and as a trade-off against mass and cost. This paper describes the configurations studied, the steady state thermal model used, the analytical methods and the results of the analysis. Much of the heat input to the outside dewar shell is radiative heat transfer from the solar panel. To lower the shell temperature, radiative cooled shields were placed between the solar panel and the dewar shell and between the bus and the dewar shell. Analysis showed that placing a radiator on the outer vapor cooled shield had a significant effect on lifetime. Lengthening the distance between the outer shell and the point where the vapor cooled shields are attached to the support straps also improved lifetime.

Petrick, S. W.↗