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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Self-aligned fabrication of vertical, fin-based structures

Modern power devices rely on complex, three-dimensional, vertical designs to increase their power density, ease their thermal management, and improve their reliability. However, fabrication techniques have historically relied on 2D processes for patterning lateral features. This work presents a new technology that uses multiple steps of angled depositions to fabricate self-aligned vertical, fin-based devices that avoid fundamental lithography resolution and alignment limitations. The fabrication flows of two devices, the self-aligned vertical finFET and the high-κ dielectric fin diode, are presented to demonstrate how angled depositions can readily achieve transistors with submicrometer, vertical gates in a source-first process and also create high-aspect ratio GaN fins with a record 70:1 aspect ratio.

Perozek, Joshua (ORCID:0000000251519131)↗
DOE OSTI2024

Characterization of latent image of electron beam resist via critical-dimension resonant soft X-ray scattering

Metrology plays a crucial role in semiconductor manufacturing by providing accurate and precise measurement and characterization of critical parameters. With the development of high-resolution extreme ultraviolet lithography (EUVL) processes, critical dimensions are shrinking to sub-10 nm. Resist materials encounter the challenge of providing heightened sensitivity and a handle on exacerbating stochastic variations. A comprehensive understanding of the chemical profile of the latent image is pivotal for mitigating stochastic effects and optimizing pattern quality. However, the subtle differences in chemistry between the exposed and unexposed regions of the resists make it extremely challenging to characterize the latent images with sub-nanometer precision. Here, we develop the metrology with critical-dimension resonant soft X-ray scattering (CD-RSoXS) to probe the chemical profiles of latent images stored in resist after exposure. The combination of absorption spectroscopy and enhanced scattering contrast makes it possible to characterize the subtle structural and chemical variations in the latent image. Moreover, the results of the measurements are compared with the simulations with a finite element method–based Maxwell solver to extract a detailed profile of the latent and developed images. We demonstrate that the CD-RSoXS technique can provide valuable insights into the high spatial resolution and local chemical sensitivity simultaneously, which is crucial to understanding the resolution limits and stochastic effects in EUVL processes.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Effect of pattern transfer process on roughness of block copolymer patterns from directed self-assembly

Block copolymer-directed self-assembly (DSA) remains promising for improving pattern quality and reducing the stochastic variations that challenge high numerical aperture extreme ultraviolet lithography. Equally critical is refining pattern transfer methods for accurately transferring the rectified DSA features to the underlying substrate. We compare two atomic layer deposition (ALD)-based techniques: sequential infiltration synthesis (SIS) and dry liftoff, applied to polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) DSA patterns. Both methods utilize aluminum oxide hard masks, with one synthesized through infiltration into the PMMA domains and the other through conformal ALD coating. High-resolution scanning electron micrographs were analyzed to measure line edge, width, and placement roughness for both the line (PMMA) and space (PS) features. Although both methods yielded similar overall 3σ rms roughness, they differed significantly in the frequency-dependent power spectral density (PSD) profiles. SIS reduced line placement roughness at length scales associated with the polymer pitch, but increased space width roughness at low frequencies, whereas dry liftoff mimicked the frequency content of the original guiding pattern. This study underscores the importance of PSD evaluation in selecting optimal pattern transfer strategies for specific applications.

Block copolymers↗
DOE OSTI2025

Mask-side Hyper-NA EUV imaging on the SHARP microscope

Hyper-NA, the prospective successor to high-numerical aperture (NA) extreme ultraviolet lithography (EUVL) could be inserted soon after 2030. Hyper-NA poses a number of challenges, including reduced depth of focus, amplified mask three-dimensional effects, and increased mask-side angular range. A Hyper-NA capable extreme ultraviolet (EUV) mask-imaging tool can address these challenges and accelerate research and development toward Hyper-NA. The Sharp High-Numerical Aperture Actinic Reticle Review Project (SHARP) EUV mask microscope is supporting mask-side high-NA imaging since 2015. Implementing mask-side Hyper-NA imaging in 2024 enables research and development toward the corresponding nodes of EUVL. Hyper-NA zoneplates at 0.75 4x/8x NA with a 6.7-deg chief ray angle and 0.85 4x/8x NA with a 7.4-deg chief ray angle are added to the SHARP microscope. Imaging at mask-side Hyper-NA is demonstrated. Imaging of 5-nm half-pitch (wafer scale) horizontal lines and spaces is demonstrated using dipole illumination. Imaging of 5-nm half-pitch (wafer scale) vertical lines and spaces is demonstrated using frequency-doubled imaging of 40-nm hp (mask scale) lines and spaces. Normalized image log slope (NILS) and modulation of Hyper-NA image data match closely to simulations for horizontal lines and spaces. A reduction in NILS of 0.3 or less is observed for vertical lines and spaces in the two-beam imaging regime. Through-focus image data are discussed, comparing different dipole sources and mask-side NAs. Mask-side Hyper-NA photomask imaging has been implemented and demonstrated on the SHARP microscope and is now available to users of the instrument.

Benk, Markus↗
DOE OSTI2024

Unzipping hBN with ultrashort mid-infrared pulses

Manipulating the nanostructure of materials is critical for numerous applications in electronics, magnetics, and photonics. However, conventional methods such as lithography and laser writing require cleanroom facilities or leave residue. We describe an approach to creating atomically sharp line defects in hexagonal boron nitride (hBN) at room temperature by direct optical phonon excitation with a mid-infrared pulsed laser from free space. We term this phenomenon “unzipping” to describe the rapid formation and growth of a crack tens of nanometers wide from a point within the laser-driven region. Formation of these features is attributed to the large atomic displacement and high local bond strain produced by strongly driving the crystal at a natural resonance. This process occurs only via coherent phonon excitation and is highly sensitive to the relative orientation of the crystal axes and the laser polarization. Its cleanliness, directionality, and sharpness enable applications such as polariton cavities, phonon-wave coupling, and in situ flake cleaving.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Chemically Amplified, Dry-Develop Poly(aldehyde) Photoresist

The catalytic decomposition of poly(phthalaldehyde) with a photoacid generator can be used as dry-develop photoresist, where the exposed film depolymerizes into small molecules to allow the development of features via controlled vaporization. Higher temperatures enabled shorter dry-development times, but also promoted faster photoacid diffusion that compromised pattern fidelity. Trihexylamine was used as a base quencher to counteract acid diffusion in a phthalaldehyde-propanal co-polymer photoresist. The propanal co-monomer in the polymer improves the vaporization rate because it has a higher vapor pressure than phthalaldehyde. Addition of the base quencher was found to improve the contrast, pattern fidelity, and ease-of-handling of the dry-develop resist in a direct-write UV lithography tool. The dry-development of 4 μ m features was achieved with no appreciable residue. For large area features, a spatially variable exposure method was used to direct the residue away from the exposed area. The gradient exposure method was used to produce 100 μ m features. Plasma etching after dry-development was also used to achieve residue-free dry-developed patterns. These results show the benefits of incorporating base additives into a dry-develop depolymerizable resist system and highlight the need for addressing residue formation.

Materials Science↗
DOE OSTI2024

Monitoring the impact of confinement on hyphal penetration and fungal behavior

Through their expansive mycelium network, soil fungi alter the physical arrangement and chemical composition of their local environment. This can significantly impact bacterial distribution and nutrient transport and can play a dramatic role in shaping the rhizosphere around a developing plant. However, direct observation and quantitation of such behaviors is extremely difficult due to the opacity and complex porosity of the soil microenvironment. In this study, we demonstrate the development and use of an engineered microhabitat to visualize fungal growth in response to varied levels of confinement. Microfluidics were fabricated using photolithography and conventional soft lithography, assembled onto glass slides, and prepared to accommodate fungal cultures. Selected fungal strains across three phyla (Ascomycota: Morchella sextalata , Fusarium falciforme ; Mucoromycota: Linnemannia elongata , Podila minutissima , Benniella ; Basidiomycota: Laccaria bicolor , and Serendipita sp.) were cultured within microhabitats and imaged using time-lapse microscopy to visualize development at the mycelial level. Fungal hyphae of each strain were imaged as they penetrated through microchannels with well-defined pore dimensions. The hyphal penetration rates through the microchannels were quantified via image analysis. Other behaviors, including differences in the degree of branching, peer movement, and tip strength were also recorded for each strain. Our results provide a repeatable and easy-to-use approach for culturing fungi within a microfluidics platform and for visualizing the impact of confinement on hyphal growth and other fungal behaviors pertinent to their remodeling of the underground environment.

Guo, Yi-Syuan (ORCID:0000000340142225)↗
DOE OSTI2024

Realizing Steady-State Microbunching with Optical Stochastic Crystallization

Optical Stochastic Cooling (OSC) is a state-of-the-art beam cooling technology first demonstrated in 2021 at the IOTA storage ring at Fermilab's FAST facility. A second phase of the research program is planned to run in early 2025 and will incorporate an optical amplifier to enable significantly increased cooling rates and greater operational flexibility. In addition to beam cooling, an OSC system can be configured to enable advanced control over the phase space of the beam. An example operational mode could enable crystallization, where the particles in a bunch are locked into a self-reinforcing, regular microstructure at the OSC fundamental wavelength; we refer to this as Optical Stochastic Crystallization (OSX). OSX represents a new path toward Steady-State Microbunching (SSMB), which may enable light sources combining the high brightness of a free-electron laser with the high repetition rate of a storage ring. Such a source has applications from the terahertz to the extreme ultraviolet (EUV), including high-power EUV generation for semiconductor lithography. This contribution will discuss the status of the OSC experimental program and its potential to achieve the first demonstration of SSMB during the upcoming experimental run.

Wallbank, M.↗
DOE OSTI2024

The Gene Fitness Atlas: A Roadmap for Predicting Evolution

We developed a novel, high-throughput microfluidic device design containing “interaction zones” where progeny cell lines compete against each other allowing for accurate analysis of bacterial cell fitness. The goal of the project was to use the device for two applications: 1) gene knockout screening and 2) antibiotic resistance screening. The microfluidic platform was fabricated using photolithography and soft lithography in polydimethylsiloxane (PDMS). E.coli Keio mutants and fluorescent wildtype parent were chosen for the study. Cells were grown overnight and their loading into the devices and seeding in mother machines was optimized. For mutant screening, the least fit mutant and wildtype parent were cultured individually and then added to the microfluidic device. The mother machines which were seeded with mutant and wildtype were imaged through time lapse microscopy and the growth of cells was observed. For antibiotic screening, wildtype E.coli cells which were grown overnight were added to the device and washed with media containing the antibiotic ampicillin. The growth pattern in presence and absence of ampicillin was observed through time lapse microscopy. It was observed that over a period of four hours, both the mutant and the wildtype divided in the mother machine and pushed daughter cells out into the interaction zone. In case of the antibiotic screening experiment, the fluorescent wildtype divided both in the absence and presence of sublethal concentration of ampicillin. This study is a proof of concept demonstration of high- throughput single cell analysis of cells using a novel microfluidics device.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2024

High Linearity RF Circuits in CMOS Platforms (CRADA Final Report)

The goal of this CRADA was to understand high linearity silicon-on-insulator (SOI) radio frequency switches. The first direction investigated was high linearity RF mixers as these components are composed of a network of switches. During the course of the investigation, it was determined that while the SOI RF switches were effective in the application in mixers and produced state of the art performance, the use of SOI for mixers is not economically feasible because the technology only worked with advanced CMOS nodes <65nm which can have an NRE cost (from lithography masks) in excess of $\$$500,000.

42 ENGINEERING↗
DOE OSTI2025

Business Plan for a Domestic Supply of Superconducting Radiofrequency Cavities

Superconducting radiofrequency (SRF) cavities are critical components of modern particle accelerators. The industrialization of SRF technology in the U.S. has a long history, with several companies becoming interested in the technology in the past 30 years. However, there is currently no U.S. manufacturer with the capability to produce fully assembled, ready-to-test SRF cavities. A majority of these companies have either left the field or shut their doors. As a result, government-sponsored SRF accelerator projects in the U.S. largely rely on European vendors for the cavity supply. This presents not only a supply chain risk for scientific use cases, but also severely limits the commercialization of accelerator-based technologies. SRF accelerators have a range of strategic applications, including environmental remediation, semiconductor lithography, medical isotope production, and irradiation/sterilization. The nurturing of a domestic SRF industry is critical to maintaining U.S. economic competitiveness.

43 PARTICLE ACCELERATORS↗
DOE OSTI2025

Ultra-Low Disorder Graphene Quantum Dot-Based Spin Qubits for Cyber Secure Fossil Energy Infrastructure (Final Technical Report)

The overarching goal of the proposed project is to demonstrate the feasibility of creating ultralow local disorder graphene quantum dots (GQDs)-based high-speed, high-fidelity spin quantum bits (qubits) for extremely cyber-secure coal energy plants of the future. Despite their inherent benefits, the coherence times in the state-of-the-art GQD qubits are still low primarily due to the local disorder in GQD devices generated during lithographic fabrication of GQDs. Hence, the focus of this research is to prepare ultralow disorder GQDs (e.g., edge roughness ~0.5nm) and evaluate the low temperature (~mK) charge/spin transport characteristics of the engineered GQD qubit platform. To achieve minimal disorder in GQD qubits, we employ a novel approach that combines nanotomy (novel GQD fabrication technique developed by the PI) and scanning probe microscopy-atomic oxidation lithography (SPM-AOL).

20 FOSSIL-FUELED POWER PLANTS↗
DOE OSTI2025

New Deformation Mechanisms in Nanocrystalline Nano-porous Small Scale Metals as Defined by Kinetically-driven Microstructures

This report describes recent advances in the design and fabrication of nanostructured metallic pillars with hierarchical microstructures using a novel nanoscale additive manufacturing approach. Through a hydrogel-infusion-based two-photon lithography (TPL) method, we successfully fabricated 3D nickel nanopillars exhibiting both nanocrystalline and nanoporous features. The resulting “bamboo-like” internal architecture comprises 30–50 nm grains and voids with similarly scaled pores. These geometrically tunable pillars, with diameters ranging from ~130 to 550 nm, serve as an ideal platform for probing deformation mechanisms in structurally heterogeneous metals at the nanoscale.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Realizing Steady-State Microbunching with Optical Stochastic Crystallization

Optical Stochastic Cooling (OSC) is a state-of-the-art beam cooling technology first demonstrated in 2021 at the IOTA storage ring at Fermilab's FAST facility. A second phase of the research program is planned to run in 2026 and will incorporate an optical amplifier to enable significantly increased cooling rates and greater operational flexibility. In addition to beam cooling, an OSC system can be configured to enable advanced control over the phase space of the beam. An example operational mode could enable crystallization, where the particles in a bunch are locked into a self-reinforcing, regular microstructure at the OSC fundamental wavelength; we refer to this as Optical Stochastic Crystallization (OSX). OSX represents a new path toward Steady-State Microbunching (SSMB), which may enable light sources combining the high brightness of a free-electron laser with the high repetition rate of a storage ring. Such a source has applications from the terahertz to the extreme ultraviolet (EUV), including high-power EUV generation for semiconductor lithography. This contribution will discuss the integration of OSX development as part of the OSC program at IOTA. The design of an accelerator lattice to enable the mechanism and associated high fidelity simulations will be shown, and a path to realizing an experimental demonstration will be discussed.

Wallbank, Michael James [Fermilab]↗
DOE OSTI2025

Steady-State Microbunching using Optical Stochastic Cooling

Optical Stochastic Cooling (OSC) is a state-of-the-art beam cooling technology first demonstrated in 2021 at the IOTA storage ring at Fermilab's FAST facility. A second phase of the research program is planned to run in 2026 and will incorporate an optical amplifier to enable significantly increased cooling rates and greater operational flexibility. In addition to beam cooling, an OSC system can be configured to enable advanced control over the phase space of the beam. An example operational mode could enable crystallization, where the particles in a bunch are locked into a self-reinforcing, regular microstructure at the OSC fundamental wavelength; we refer to this as Optical Stochastic Crystallization (OSX). OSX represents a new path toward Steady-State Microbunching (SSMB), which may enable light sources combining the high brightness of a free-electron laser with the high repetition rate of a storage ring. Such a source has applications from the terahertz to the extreme ultraviolet (EUV), including high-power EUV generation for semiconductor lithography. This contribution will discuss the integration of OSX development as part of the OSC program at IOTA. The design of an accelerator lattice to enable the mechanism and associated high fidelity simulations demonstrating the beam dynamics will be shown, and a path to realizing an experimental demonstration will be discussed.

Wallbank, Michael James [Fermilab]↗
DOE OSTI2026

Bio-Inspired Energy-Efficient Nanofabricated Electrical Contacts

Nanoscale electrical contacts, especially those between materials of dissimilar electronic properties, often represent one of the main causes of drops in energy transfer efficiency. They are also among the sources of above-threshold noise, and their performance often decreases over the lifetime of the nanodevices. Scale-down limitations from mesoscopic to nanoscale devices, and likewise, of nanoscale to quantum-scale devices are also impeded by contacts’ quality. Making more reliable, energy-efficient electrical contacts is among the goals of the nanoelectronics research within the framework of energy-efficient electronic systems. This report focuses on the design, nanofabrication, and testing of novel shapes of electrical contacts. Lithography and nanofabrication were utilized to mimic the approximate shape of insect setae for mesoscale contacts design. The contacts are tested for elementary charge transport via I–V curves and for the broadband, 1/f noise. Tests show that contacts design leads to a measurable decrease in the energy necessary to operate a contact as a switch by at least 12–20%, depending on temperature, while broadband noise shows measurably lower power spectra, for bio-inspired contacts. The proposed method is open to modifications and improvements as required by various on-chip applications.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Mechanism-Resolved PFM of Ferroionic and Ferroelectric Responses in Thickness-Gradient Hf 0.5 Zr 0.5 O 2 Libraries

Resolving growth mechanisms and thickness evolution of functional properties is one of the key tasks in materials discovery and optimization involving thin-film materials, traditionally requiring significant experimental budgets. Here we introduce the combination of thickness-gradient libraries and automated scanning probe microscopy as a systematic pathway to elucidate growth modes and disentangle ferroelectric and electrochemical contributions in ferroelectric thin films. As a model system, we explore the Hf 0.5 Zr 0.5 O 2 (HZO) gradient thin films grown on La x Sr 1-x MnO 3 (LSMO) bottom electrode thin films. Automated piezoresponse force microscopy, spectroscopy, and lithography reveals that irreversible topographic deformation arises from electrochemical activity at the LSMO surface, whereas reversible phase inversion in HZO reflects ferroelectric switching. Automated topography height-map scans are used to further quantify nucleation density, particle-size evolution, and roughness correlations across the thickness-gradient, demonstrating that improved plume stabilization during growth suppresses interfacial reactions and promotes dense, fine-grained HZO conducive to ferroelectric phase formation. This combined materials-engineering and automated-SPM framework establishes a platform for high-throughput, mechanism-resolved characterization of ferroionic and ferroelectric responses in complex oxide films.

FOS: Physical sciences↗
DOE OSTI2024

Realizing Steady-State Microbunching with Optical Stochastic Crystallization

Optical Stochastic Cooling (OSC) is a state-of-the-art beam cooling technology first demonstrated in 2021 at the IOTA storage ring at Fermilab's FAST facility. A second phase of the research program is planned to run in early 2025 and will incorporate an optical amplifier to enable significantly increased cooling rates and greater operational flexibility. In addition to beam cooling, an OSC system can be configured to enable advanced control over the phase space of the beam. An example operational mode could enable crystallization, where the particles in a bunch are locked into a self-reinforcing, regular microstructure at the OSC fundamental wavelength; we refer to this as Optical Stochastic Crystallization (OSX). OSX represents a new path toward Steady-State Microbunching (SSMB), which may enable light sources combining the high brightness of a free-electron laser with the high repetition rate of a storage ring. Such a source has applications from the terahertz to the extreme ultraviolet (EUV), including high-power EUV generation for semiconductor lithography. This contribution will discuss the status of the OSC experimental program and its potential to achieve the first demonstration of SSMB during the upcoming experimental run.

43 PARTICLE ACCELERATORS↗