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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Characterization of Quantum Frequency Processors

Frequency-bin qubits possess unique synergies with wavelength-multiplexed lightwave communications, suggesting valuable opportunities for quantum networking with the existing fiber-optic infrastructure. Although the coherent manipulation of frequency-bin states requires highly controllable multi-spectral-mode interference, the quantum frequency processor (QFP) provides a scalable path for gate synthesis leveraging standard telecom components. Here, we summarize the state of the art in experimental QFP characterization. Distinguishing between physically motivated “open box” approaches that treat the QFP as a multiport interferometer, and “black box” approaches that view the QFP as a general quantum operation, we highlight the assumptions and results of multiple techniques, including quantum process tomography of a tunable beamsplitter—to our knowledge the first full process tomography of any frequency-bin operation. Our findings should inform future characterization efforts as the QFP increasingly moves beyond proof-of-principle tabletop demonstrations toward integrated devices and deployed quantum networking experiments.

42 ENGINEERING↗
DOE OSTI2024

Efficient Unitary Designs from Random Sums and Permutations

A unitary k-design is an ensemble of unitaries that matches the first k moments of the Haar measure. In this work, we provide two efficient constructions of k-designs on n-qubits using new random matrix theory techniques. Our first construction is based on exponentiating sums of random i.i.d. Hermitian matrices and uses O(k2n2)-many gates. In the spirit of central limit theorems, we show that this random sum approximates the Gaussian Unitary Ensemble (GUE). We then show that the product of just two exponentiated GUE matrices is already approximately Haar random. Our second construction is based on products of exponentiated sums of random permutations and uses Õ(k poly (n)) many gates. The k dependence is optimal (up to polylogarithmic factors) and is inherited from the efficiency of existing k-wise independent permutations. Furthermore, replacing random permutations with quantum-secure pseudorandom permutations (PRPs), we also obtain a pseudorandom unitary (PRU) ensemble that is secure under nonadaptive queries. A central feature of both proofs is a new connection between the polynomial method in quantum query complexity and the large-dimension (N) expansion in random matrix theory. In particular, the first construction uses the polynomial method to control high moments of certain random matrix ensembles without requiring delicate Weingarten calculations. In doing so, we define and solve a moment problem on the unit circle, asking whether a finite number of equally weighted points can reproduce a given set of moments. In our second construction, the key step is to exhibit an orthonormal basis for irreducible representations of the partition algebra that has a low-degree large-N expansion. This allows us to show that the distinguishing probability is a low-degree rational polynomial of the dimension N.

algebra↗
DOE OSTI2024

Electrical design of the flexible imaging diffraction diagnostic for laser experiments (FIDDLE) at the National Ignition Facility (NIF)—Requirements, design, and performance

The Flexible Imaging Diffraction Diagnostic for Laser Experiments (FIDDLE) is a newly developed diagnostic for imaging time resolved diffraction in experiments at the National Ignition Facility (NIF). It builds on the successes of its predecessor, the Gated Diffraction Development Diagnostic (G3D). The FIDDLE was designed to support eight Daedalus version 2 sensors (six more hCMOS sensors than any other hCMOS-based diagnostic in NIF to date) and an integrated streak camera. We will review the electrical requirements, design, and performance of the electrical subsystems that were created to support this large number of cameras in the FIDDLE. The analysis of the data that the FIDDLE is intended to collect relies heavily on the accurate and well-understood timing of each sensor. We report camera-to-camera timing jitter of less than 100 ps rms and sensor integration times of 2.2 ns FWHM in 2-2 timing mode. Additionally, diffraction experiments on the NIF produce electric fields (EMI) on the order of 1 kV/m, which have been observed to negatively impact the performance of some electrical components of the FIDDLE. We report on the results of testing hCMOS camera electronics in a similar EMI environment generated in an offline lab. In addition, we also summarize the use of a novel approach to using a vector network analyzer as an EMI leak detector to understand and reduce the negative impacts of EMI on the FIDDLE.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

A nanocryotron memory and logic family

The development of superconducting electronics based on nanocryotrons has been limited so far to few device circuits, in part due to the lack of standard and robust logic cells. Here, we introduce and experimentally demonstrate designs for a set of nanocryotron-based building blocks that can be configured and combined to implement memory and logic functions. The devices were fabricated by patterning a single superconducting layer of niobium nitride and measured in liquid helium on a wide range of operating points. The tests show 10 - 4 bit error rates with above ± 20 % margins up to 50 MHz and the possibility of operating under the effect of an out-of-plane 36 mT magnetic field, with ± 30 % margins at 10 MHz. Additionally, we designed and measured an equivalent delay-flip-flop made of two memory cells to show the possibility of combining multiple building blocks to make larger circuits. These blocks may constitute a solid foundation for the development of nanocryotron logic circuits and finite-state machines with potential applications in the integrated processing and control of superconducting nanowire single-photon detectors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Ambipolar Transport in Polycrystalline GeSn Transistors for Complementary Metal-Oxide-Semiconductor Applications

Group-IV alloy GeSn is a promising material for electronic and optoelectronic applications due to its compatibility with both Si substrates and established Si fabrication processes. This study focuses on polycrystalline GeSn (10% Sn), which offers a cost-effective, large-area, and versatile alternative to epitaxial GeSn. We demonstrate ambipolar transport behavior in polycrystalline GeSn thin film transistors, achieving electron and hole field-effect mobilities reaching up to 0.05 cm 2 /Vs and 2.05 cm 2 /Vs, respectively. Through temperature-dependent analysis, we elucidate the underlying mechanism of this phenomenon, which we attribute to quantum tunneling between the Schottky barrier contact and the channel, as well as potential barriers between the grain boundaries of this polycrystalline film, thereby advancing the understanding of polycrystalline GeSn's electrical properties. Furthermore, this work highlights the potential of ambipolar transport as a technique to employ towards the development of GeSn complementary metal-oxide-semiconductor field-effect transistors, promising to simplify and reduce the cost of GeSn manufacturing processes for edge computing and sensing applications.

42 ENGINEERING↗
DOE OSTI2021

Impact of Random Spatial Fluctuation in Non-Uniform Crystalline Phases on the Device Variation of Ferroelectric FET

In this work, a comprehensive study of random spatial fluctuation of the ferroelectric (FE) phase and dielectric (DE) phase in FeFETs is conducted to understand its impact on device variation. It is found that: i) there exists a certain DE percentage threshold that below which the increase of the DE phase does not significantly impact the device memory window and variation and only above which evident device degradation can be observed; ii) increasing the DE phase increases the variation in the memory window and the coercive field distribution further exacerbates the variation, hence degrading the sensing margin; iii) decreasing the number of grains degrades the device variation, which calls for further grain size engineering for variation suppression.

42 ENGINEERING↗
DOE OSTI2022

Logical and Physical Reversibility of Conservative Skyrmion Logic

Magnetic skyrmions are nanoscale whirls of magnetism that can be propagated with electrical currents. The repulsion between skyrmions inspires their use for reversible computing based on the elastic billiard ball collisions proposed for conservative logic in 1982. In this letter, we evaluate the logical and physical reversibility of this skyrmion logic paradigm, as well as the limitations that must be addressed before dissipation-free computation can be realized.

42 ENGINEERING↗
DOE OSTI2020

Blockchains for Transactive Energy Systems: Opportunities, Challenges, and Approaches

The emergence of blockchains and smart contracts has renewed interest in electrical cyberphysical systems, especially transactive energy systems. Here, to address the associated challenges, we present TRANSAX, a blockchain-based transactive energy system that provides an efficient, safe, and privacy-preserving market built on smart contracts.

29 ENERGY PLANNING, POLICY, AND ECONOMY↗
DOE OSTI2024

Experimental Analysis of Distribution Network Voltage Regulation Using Smart Inverters

Smart inverters (SIs) have demonstrated their potential to provide grid services for both transmission and distribution systems. One of these grid services, distribution network voltage regulation by SIs, has the potential to improve network voltage regulation through controlling the reactive and active power output of the SIs. Voltage regulation by SIs will be distributed and might be better suited to controlling local conditions to complement traditional voltage-regulating assets, e.g., tap-changing transformers, capacitor banks, and line voltage regulators. There is a gap in the literature on comparing the SI response characteristics when the SIs are controlled by a local controller or external control signals. This paper presents an experimental study to characterize SI reactive power regulation responses to two different control methods: autonomous control and remote dispatch. We found that SI reactive power regulation responses exhibit important differences between these methods in terms of delays and ramp rate. Finally, power-hardware-in-the-loop (PHIL) tests were conducted to evaluate the performance of these two methods. The PHIL test results show that the SI response characteristics for autonomous control and remote dispatch need to be considered when planning for distribution network voltage regulation using SIs.

autonomous control↗
DOE OSTI2022

Probing the Atomic Scale Mechanisms of Time Dependent Dielectric Breakdown in Si/SiO 2 MOSFETs (June 2022)

Here we report on an atomic-scale study of trap generation in the initial/intermediate stages of time-dependent dielectric breakdown (TDDB) in high-field stressed (100) Si/SiO2 MOSFETs using two powerful analytical techniques: electrically detected magnetic resonance (EDMR) and near-zero-field magnetoresistance (NZFMR). We find the dominant EDMR-sensitive traps generated throughout the majority of the TDDB process to be silicon dangling bonds at the (100) Si/SiO2 interface (Pb0 and Pb1 centers) for both the spin-dependent recombination (SDR) and trap-assisted tunneling (SDTAT) processes. We find this generation to be linked to both changes in the calculated interface state densities as well as changes in the NZFMR spectra for recombination events at the interface, indicating a redistribution of mobile magnetic nuclei which we conclude could only be due to the redistribution of hydrogen at the interface. Additionally, we observe the generation of traps known as E’ centers in EDMR measurements at lower experimental temperatures via SDR measurements at the interface. Our work strongly suggests the involvement of a rate-limiting step in the tunneling process between the silicon dangling bonds generated at the interface and the ones generated throughout the oxide.

36 MATERIALS SCIENCE↗
DOE OSTI2022

On the Feasibility of 1T Ferroelectric FET Memory Array

To fully exploit the ferroelectric field effect transistor (FeFET) as compact embedded nonvolatile memory for various computing and storage applications, it is desirable to use a single FeFET (1T) as a unit cell and arrange the cells into an array. However, many write mechanisms for an 1T FeFET array reported in the literature are yet to be validated experimentally. In this work, we performed a comprehensive experimental characterization on the write operations in an 1T- NOR and 1T- AND array using n-channel bulk FeFETs. We discovered that: 1) the source/drain contact can only supply minority carriers (i.e., electrons) to the channel for polarization screening during the low- V TH state programming; 2) the body contact can not only supply majority carriers (i.e., holes) for efficient high- V TH state write, but also depletion charge for low- V TH state programming, though with lower efficiency; and 3) during the low/high- V TH programming, only the path that can supply negative/positive screening charges, respectively, need to respond, which necessitates the application of proper write biases on the corresponding terminal. Based on the understanding of these write mechanisms, we show the importance of localized body contact or column-wise body contact for the successful high- V TH state programming. We also show that the previously proposed C- AND write scheme fails to program the FeFET to the low- V TH state for our devices. Finally, we propose several write schemes for both 1T- AND and 1T- NOR arrays for various scenarios providing insights for choosing the appropriate write scheme, which will facilitate the adoption of 1T FeFET memory arrays for emerging applications.

FeFET↗
DOE OSTI2021

Impact of Surface Recombination on Single-Event Charge Collection in an SOI Technology

Semiconductor–insulator interfaces play an important role in the reliability of integrated devices; however, the impact of these interfaces on the physical mechanisms related to single-event effects has not been previously reported. We present experimental data that demonstrate that single-event charge collection can be impacted by changes in interface quality. The experimental data, combined with simulations, show that single-event response may depend on surface recombination at interface defects. The effect depends on strike location and increases with increasing linear energy transfer (LET). Surface recombination can affect single-event charge collection for interfaces with a surface recombination velocity (SRV) of 1000 cm/s and is a dominant charge collection mechanism with SRV >10 5 cm/s.

42 ENGINEERING↗
DOE OSTI2021

Characterization of a Small-Scale Prototype Detector With Wide Dynamic Range for Time-Resolved High-Energy X-Ray Applications

We present characterization measurements of a fast-framing, wide-dynamic-range x-ray area detector intended for high-energy applications (≥20 keV photons). The MM-PAD-2.1 combines an integrating pixel front-end with a charge-removal mechanism to extend the maximum measurable signal to > 107 20-keV ph/pixel/frame. The charge-removal mechanism is dead-time-less (i.e., incoming signal continues to be integrated by the front-end while charge removal is taking place) up to an incoming photon rate of > 109 20-keV ph/pix/s. A 16×16 pixel prototype was fabricated and characterized using both laboratory and synchrotron x-ray sources, allowing for measurements from single-photon to high-flux conditions. High-flux measurements show linear performance up to ~1010 ph/s in a spot spanning approximately 2×1.5 pixels (FWHM). The onset of temporary radiation damage in the detector was observed during these measurements, manifesting as failure of the digital readout from the detector. These effects were seen to reverse after annealing at 30° C for several hours.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

Quantum computing in power systems

Electric power systems provide the backbone of modern industrial societies. Enabling scalable grid analytics is the keystone to successfully operating large transmission and distribution systems. However, today's power systems are suffering from ever-increasing computational burdens in sustaining the expanding communities and deep integration of renewable energy resources, as well as managing huge volumes of data accordingly. These unprecedented challenges call for transformative analytics to support the resilient operations of power systems. Recently, the explosive growth of quantum computing techniques has ignited new hopes of revolutionizing power system computations. Quantum computing harnesses quantum mechanisms to solve traditionally intractable computational problems, which may lead to ultra-scalable and efficient power grid analytics. This paper reviews the newly emerging application of quantum computing techniques in power systems. We present a comprehensive overview of existing quantum-engineered power analytics from different operation perspectives, including static analysis, transient analysis, stochastic analysis, optimization, stability, and control. We thoroughly discuss the related quantum algorithms, their benefits and limitations, hardware implementations, and recommended practices. We also review the quantum networking techniques to ensure secure communication of power systems in the quantum era. Finally, we discuss challenges and future research directions. This paper will hopefully stimulate increasing attention to the development of quantum-engineered smart grids.

24 POWER TRANSMISSION AND DISTRIBUTION↗