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At least 91 records · Page 5

Effects of an unbalanced magnetron in a unique dual-cathode, high rate reactive sputtering system

Simple plasma and magnetic field measurements are presented to illustrate the opportunities afforded by using unbalanced magnetrons in a dual-cathode system. The system employs a pair of opposed cathodes, 38 cm x 13 cm, placed 27.5 cm apart, to coat specimens mounted on a rotational substrate holder. Comparisons are drawn between the original 'balanced' magnetron and several unbalanced configurations in terms of field strengths, deposition rates, etching characteristics, and substrate ion current densities for the growth of TiN films. The effects of 'unbalancing' on the nature of the plasma within the 3D geometry of the deposition chamber are elucidated via plasma probe and magnetic field studies performed under a variety of conditions. All the unbalanced configurations examined provided enhanced ion bombardment at the surface of the growing film. The closed-field or opposed magnet geometry resulted in a threefold or greater increase in current density when compared with that obtained using the corresponding mirrored geometry under the same conditions.

Rohde, S. L.↗

A Magnetron Sputter Deposition System for the Development of Multilayer X-Ray Optics

The proposal objective is to establish the capability to deposit multilayer structures for x-ray, neutron, and EUV optic applications through the development of a magnetron sputtering deposition system. A specific goal of this endeavor is to combine multilayer deposition technology with the replication process in order to enhance the MSFC's position as a world leader in the design of innovative X-ray instrumentation through the development of full shell replicated multilayer optics. The development of multilayer structures is absolutely necessary in order to advance the field of X-ray astronomy by pushing the limit for observing the universe to ever increasing photon energies (i. e. up to 200 keV or higher); well beyond Chandra (approx. 10 keV) and NuStar's (approx. 75 keV) capability. The addition of multilayer technology would significantly enhance the X-ray optics capability at MSFC and allow NASA to maintain its world leadership position in the development, fabrication and design of innovative X-ray instrumentation which would be the first of its kind by combining multilayer technology with the mirror replication process. This marriage of these technologies would allow astronomers to see the universe in a new light by pushing to higher energies that are out of reach with today's instruments.To this aim, a magnetron vacum sputter deposition system for the deposition of novel multilayer thin film X-ray optics is proposed. A significant secondary use of the vacuum deposition system includes the capability to fabricate multilayers for applications in the field of EUV optics for solar physics, neutron optics, and X-ray optics for a broad range of applications including medical imaging.

Broadway, David↗

A Magnetron Sputter Deposition System for the Development of X-Ray Multilayer Optics

The project objective is to establish the capability to deposit multilayer structures for x-ray, neutron, and extreme ultraviolet (EUV) optic applications through the development of a magnetron sputtering deposition system. A specific goal of this endeavor is to combine multilayer deposition technology with the replication process in order to enhance NASA Marshall Space Flight Center's (MSFC's) position as a world leader in the design of innovative x-ray instrumentation through the development of full shell replicated multilayer optics. The development of multilayer structures are absolutely necessary in order to advance the field of x-ray astronomy by pushing the limit for observing the universe to ever-increasing photon energies (i.e., up to 200 keV or higher), well beyond Chandra's (approx.10 keV) and NuStar's (approx.75 keV) capability. The addition of multilayer technology would significantly enhance the x-ray optics capability at MSFC and allow NASA to maintain its world leadership position in the development, fabrication, and design of innovative x-ray instrumentation, which would be the first of its kind by combining multilayer technology with the mirror replication process. This marriage of these technologies would allow astronomers to see the universe in a new light by pushing to higher energies that are out of reach with today's instruments. To this aim, a magnetron vacuum sputter deposition system for the deposition of novel multilayer thin film x-ray optics is proposed. A significant secondary use of the vacuum deposition system includes the capability to fabricate multilayers for applications in the field of EUV optics for solar physics, neutron optics, and x-ray optics for a broad range of applications including medical imaging.

Broadway, David↗

Performance Characterization of a Solenoid-type Gas Valve for the H- Magnetron Source at FNAL

The magnetron-style H- ion sources currently in operation at Fermilab use piezoelectric gas valves to function. This kind of gas valve is sensitive to small changes in ambient temperature, which affect the stability and performance of the ion source. This motivates the need to find an alternative way of feeding H2 gas into the source. A solenoid-type gas valve has been characterized in a dedicated off-line test stand to assess the feasibility of its use in the operational ion sources. H- ion beams have been extracted at 35 keV using this valve. In this study, the performance of the solenoid gas valve has been characterized measuring the beam current output of the magnetron source with respect to the voltage and pulse width of the signal applied to the gas valve.

43 PARTICLE ACCELERATORS↗

Recent Operation of the FNAL Magnetron H- Ion Source

This paper will detail changes in the operational paradigm of the Fermi National Accelerator Laboratory (FNAL) magnetron H- ion source due to upgrades in the accelerator system. Prior to November of 2012 the H- ions for High Energy Physics (HEP) experiments were extracted at ~18 keV vertically downward into a 90 degree bending magnet and accelerated through a Cockcroft-Walton accelerating column to 750 keV. Following the upgrade in the fall of 2012 the H- ions are now directly extracted from a magnetron at 35 keV and accelerated to 750 keV by a Radio Frequency Quadrupole (RFQ). This change in extraction energy as well as the orientation of the ion source required not only a redesign of the ion source, but an updated understanding of its operation at these new values. Discussed in detail are the changes to the ion source timing, arc discharge current, hydrogen gas pressure, and cesium delivery system that were needed to maintain consistent operation at >99% uptime for HEP, with an increased ion source lifetime of over 9 months.

43 PARTICLE ACCELERATORS↗

Superlattice-Structured Films by Magnetron Sputtering as New Era Electrodes for Advanced Lithium-ion Batteries

Sustaining sound structures in Si-based anodes is extremely challenging because of the high volumetric expansion that occurs upon cycling. To maintain high capacities over cycles, new designs rely on engineering-specific hierarchical geometries and/or optimized composite compositions such that at least one of the multiple elements serves as buffer and/or electron conductive pathways in the electrodes. In this paper, we report an innovative design in which alternating layers of periodic atomic structures involving multiple elements form a new anode material for lithium-ion batteries. In this work, a superlattice-structured amorphous film made using Si, Mo, and Cu is fabricated by a simple and scalable magnetron sputtering process for the first time. This continuous and repetitive superlattice formation along the film thickness provides a homogeneous stress-strain distribution. The Mo-Cu layer in the superlattice acts as an inactive-conductive layer and as a backbone to handle the volume expansion of active Si upon cycling. This nano-functional superlattice approach enables harnessing the high energy density of Si while maintaining its structural stability. As a result, the electrode exhibits high specific capacity and capacity retention even at high cycling rates. The possible use of the film in a full cell is also evaluated by cycling it vs. the LiMn 1.5 Ni 0.5 O 4 cathode. The full cell maintains a stable capacity of about 900 mAh g anode -1 over 150 cycles, at ~600 mA g -1 rate. The remarkable performance of this nano-functional superlattice film is found to be promising as anodes for applications that require high energy, long calendar life, and excellent abuse tolerance such as electric vehicle batteries.

25 ENERGY STORAGE↗

Probing layered structure of Inconel 625 coatings prepared by magnetron sputtering

Coating/substrate interface and oxide layers present in Inconel 625 film may cause significant impacts on its corrosion behavior. However, layered structure of Inconel 625 coatings remains poorly understood due to its requirement of high spatial resolution. Here we have applied X-ray reflectometry (XRR) to probe the layered structure of magnetron-sputtered Inconel 625 film with atomic spatial resolution. Our results indicate that there exists a 2 nm thick Cr-rich Inconel sublayer underneath the principal film. On top of the principal film, it is found a 2 nm thick oxide layer mainly consisting of NiO. In addition, we detected ~2 Å contamination layer on the sapphire substrate, although argon ion sputter cleaning had been applied to the substrate prior to deposition. By comparing the coatings with different deposition time, we observed that the thickness of principal Inconel 625 layer grows linearly with deposition time, with all other layers remaining constant. Our findings provide insight into the layered structures of Inconel 625 coatings with atomic-scale spatial resolution, and provide directions for future efforts that aim to improve the corrosion resistance of Inconel 625 coatings.

14 SOLAR ENERGY↗

Accounting for the Complex Surface Structure in Ellipsometric Studies of the Effects of Magnetron Sputtering Modes on the Growth and Optical Properties of In{sub 2}O{sub 3} Films

The efficiency of invoking additional information on optical transmission in solving the inverse problem of ellipsometry by a minimization method is demonstrated in practice for In{sub 2}O{sub 3} fi doped and nondoped with Sn on Al{sub 2}O{sub 3} (012) substrates. This approach allows the thickness and refractive index of thin films with rough surfaces to be uniquely determined. Solutions of the inverse problem in the framework of one-, two-, and multilayer models are compared. The last provides the best description of the experimental data and the correct parameters of the samples. The dependences of the investigated properties of films produced with different magnetron sputtering modes are found using the above methods and models and do not contradict general concepts about the film formation by this material.

36 MATERIALS SCIENCE↗

Easy Controlled Properties of Quaternary FeNiCrCd Thin Films Deposited from a Single dc Magnetron Sputtering Under the Influence of Deposition Rate

The quaternary FeNiCrCd thin films were produced from a single FeNiCrCr source on a commercial flexible polymer substrate using one dc magnetron sputtering technique. For that, a series of the films with a thickness of 50 nm were produced at different deposition rates of 0.02, 0.04, 0.06, and 0.08 nm/s, separately. In this study, as far as concerned, this was the first time that structural and magnetic properties of FeNiCrCd thin films were investigated. According to compositional analysis, the Fe and Cr contents slightly decreased with increasing deposition rate while Ni was almost constant, whereas those of the amount of Cd atoms increased. However, the atomic amounts of Fe and Cd in the films are quite different from those of the source material. The change of the atomic contents in the films from the source may be attributed to the relatively different bond energy/melting point of metals which have different contents sputtered from source material since this physical parameter is very significant for the sputtering process. For crystal structural analysis, a combination of hexagonal close-packed (hcp) and body-centered cubic (bcc) were observed. The peak intensity of the bcc-dominated planes decreased while the hcp-dominant plane increased since the change in peak intensities is compatible with the compositional analysis with increasing deposition rate. And, the grain sizes decreased gradually from 40.1 to 23.4 nm, with increasing deposition rate from 0.02, to 0.08 nm/s. Also, the film surfaces transformed from a rough to smooth surfaces with decreasing grain sizes as deposition rate increased. For magnetic analysis, the saturation magnetization M{sub s} values decreased as 1030, 773, 730, and 217 emu/cm{sup 3} with increasing deposition rate as 0.02, 0.04, 0.06, and 0.08 nm/s, respectively. In the same manner, the coercivity H{sub c} values were found as 11, 7, 6, and 2 Oe with the deposition rate of 0.02, 0.04, 0.06, and 0.08 nm/s, respectively. The decrease of the H{sub c} may have primarily come from the transformation of rough to smooth surface of the films. It may also be said that the films showed soft magnetic properties due to their low H{sub c} values with increasing deposition rate. Thus, the magnetic properties of the quaternary FeNiCrCd alloy films were seen to be easily improved with the deposition rate parameter for potential use in different industrial applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Magnetic and Magnetotransport Characteristics of Cr-Substituted Ni{sub 55}Mn{sub 34}Sn{sub 11} Thin Films Grown by Magnetron Sputtering

Highly oriented Cr-substituted Ni{sub 55}Mn{sub 34}Sn{sub 11} Heusler thin films having thickness ~ 400 nm were deposited by Ultrahigh vacuum dc magnetron sputtering on MgO (100) substrates. At room temperature, the films exhibit a mixture of dominant L2{sub 1} cubic austenite phase, as revealed by the intense (002) and (004) peaks, along with small fraction of the orthorhombic–martensitic phase. Surface morphology of the thin films showed distribution of Cr-rich and Cr-deficit regions together with patterned and aligned magnetic domains, thus bringing out the inherent room temperature ferromagnetism of the film. At temperatures above the Curie temperature, T{sub C} ~ 321 K, the magnetic behaviour of the films is seen to follow the Curie law rather than the Curie–Weiss law. Ferromagnetic to antiferromagnetic transition appears at T{sub N} ~ 247 K, which gives rise to exchange bias at low temperatures due to the coexistence of the two magnetic orders. This phase coexistence also leads to the formation of a spin glass state deep into the martensitic region. The film exhibits metal-like nature at high temperature and semiconductor-like behaviour with the lowering of temperature. A reentrant metallic state is observed at T ≤ 38 K during cooling that persists up to ≤ 62 K in warming cycle. The hysteresis in the ρ–T curve spread over a very wide temperature range confirms the magnetic phase coexistence in the martensitic state in the present thin films. The magnetoresistance (MR) first increases (2.4% at 300 K and H = 50 kOe) with temperature and maximizes to around ~ 3.25% at T = 150 K and then starts decreasing. Its value in the glassy state is very small. This shows that a magnetic liquid like state is more conducive to larger MR.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Photocatalytic activity of anatase titanium dioxide nanostructures prepared by reactive magnetron sputtering technique

In this work, nanostructured titanium dioxide (TiO{sub 2}) photocatalysts with high optical and structural homogeneity were successfully synthesized by dc reactive magnetron sputtering technique. The TiO{sub 2} thin films were produced with high structural homogeneity without any heat treatment. Analysis of the X-ray diffraction patterns and UV–visible spectroscopy gave an indication that the structure of prepared films is anatase with energy band gap of 3.23 eV. The Fourier-transform infrared spectroscopy has confirmed the formation of Ti–O bond. The average size of TiO{sub 2} particles in the deposited films was ranging in 5–7 nm. These nanostructures are very applicable as photocatalysts as their photocatalytic activity was determined from the degradation rate with UV irradiation time as the first order reaction rate constant was determined to be 2.4 × 10{sup −3} min{sup −1}.

36 MATERIALS SCIENCE↗

Physical properties of RF magnetron sputtered GaN/n-Si thin film: impacts of RF power

GaN thin film was successfully produced on n-Si(100) substrate by RF magnetron sputter under different RF power. Experimental measurement techniques such as UV/Vis spectroscopy, field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), atomic force microscopy (AFM), and Micro-Raman Spectroscopy were used to research effects of Radio Frequency power on physical properties of produced thin film. It has been found that produced thin film was polycrystalline structure with (100) and (110) planes of hexagonal GaN from X-ray diffraction measurement result. It also proved that increasing RF power gives rise to deterioration in crystal quality of GaN thin film. Reason of this deterioration was discussed. It has been achieved that increasing RF power has resulted in decreasing optical band gap energy of GaN thin film. Reasons for these changes in optical band gap energy were explained. It was seen that some thin films were grown as layer-plus-island mode (Stranski–Krastanov growth mode) and others were grown as layer-by-layer growth mode (Frank van der Merwe mode) from AFM analysis. It has been found that increasing RF power has resulted in improvement of surface morphology of thin film from field emission scanning electron microscopy analysis. However, reaching RF power to 125 W leads to start to deteriorate of surface of GaN thin film. The reasons for this have been discussed. E{sub 1}(TO) transverse optical phonon mode of hexagonal GaN with different intensity was detected from Micro-Raman Spectroscopy measurement. The reasons for this difference have been discussed. It was concluded that RF power has played a significant role in growing high quality GaN thin film. Morphological, structural, and optical properties of GaN thin film were enhanced by controlling RF power, making them a potential candidate for LED, solar cell, diode application.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Role of oxygen concentrations on structural and optical properties of RF magnetron sputtered ZnO thin films

We report an investigation on the effect of oxygen flow rate on the structural and optical properties of zinc oxide thin films prepared by RF magnetron sputtering. The structural measurements were carried using grazing incidence X-ray diffraction, atomic force microscopy and Raman spectroscopy. The role of oxygen partial pressure on the crystallinity, the surface morphology and vibrational modes has been established. The optical properties of the films were investigated using FR-Basic-VIS/NIR fitted with FR-Monitor software for film thickness, refractive index and color determination. The film thickness is observed to increase when oxygen is introduced at 4 sccm but eventual decrease with increase in the flow rate an indication of initial increase in rate of deposition followed by reduction. Elaborate explanations of these trends are provided.

36 MATERIALS SCIENCE↗

Properties of Gallium Oxide Films Obtained by HF-Magnetron Sputtering

The results of an analysis of structure and phase composition of gallium oxide films obtained by HF-magnetron sputtering are presented. It is shown that in the interval 290–350 K, the increase in the film conductivity with increasing temperature is due to the excitation of electrons from a local level Е{sub t} located 0.95 eV below the conduction band bottom.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Preparation and Oxidation Performance of a NiCoCrAlYSiHf + NiAl Composite Coating Deposited by Arc Ion Plating and Magnetron Sputtering Techniques

A NiCoCrAlYSiHf+NiAl composite coating was deposited onto a second-generation single-crystal superalloy René N5 by methods of arc ion plating and magnetron sputtering. After vacuum annealing, the composite coating exhibited a gradient distribution of elements, in which Al was enriched in outer layer and Cr was enriched in inner layer. Compared with conventional NiCoCrAlYSiHf and β-NiAl coatings, the composite coating was evaluated in isothermal and cyclic oxidation tests at 1100 °C in ambient air. The results showed that the oxidation rate of the composite coating was lower than that of NiCoCrAlYSiHf coating. Meanwhile, the extent of interdiffusion between coating and substrate in the composite coating was slighter compared with that in the β-NiAl coating. Microstructure evolutions of the composite coating after annealing and further oxidation test are investigated.

36 MATERIALS SCIENCE↗

Properties of Nb3Sn films fabricated by magnetron sputtering from a single target

Superconducting Nb3Sn films were fabricated on sapphire and fine grain Nb substrates by magnetron sputtering from a single stoichiometric Nb3Sn target. The structural, morphological and superconducting properties of the films annealed for 24 h at temperatures of 800-1000 {\deg}C were investigated. The effect of the annealing time at 1000 {\deg}C was examined for 1, 12, and 24 h. The film properties were characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy, energy dispersive X-ray spectroscopy, and Raman spectroscopy. The DC superconducting properties of the films were characterized by a four-point probe measurement down to cryogenic temperatures. The RF surface resistance of films was measured over a temperature range of 6-23 K using a 7.4 GHz sapphire-loaded Nb cavity. As-deposited Nb3Sn films on sapphire had a superconducting critical temperature of 17.21 K, which improved to 17.83 K when the film was annealed at 800 {\deg}C for 24 h. For the films annealed at 1000 {\deg}C, the surface Sn content was reduced to ~11.3 % for an annealing time of 12 h and to ~4.1 % for an annealing time of 24 h. The Raman spectra of the films confirmed the microstructural evolution after annealing. The RF superconducting critical temperature of the as-deposited Nb3Sn films on Nb was 16.02 K, which increased to 17.44 K when the film was annealed at 800 {\deg}C for 24 h.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Effect of annealing on Curie temperature and phase transition in La{sub 0.55}Sr{sub 0.08}Mn{sub 0.37}O{sub 3} epitaxial films grown on SrTiO{sub 3} (100) substrates by reactive radio frequency magnetron sputtering

Mn-poor LaSrMnO{sub 3} (LSMO) epitaxial films were grown on SrTiO{sub 3} (100) substrates by radio frequency magnetron sputtering in an argon and oxygen gas mix, and then the samples were annealed in air at various temperatures (T{sub a}). 2 theta-chi X-ray diffraction mapping, nano-beam diffraction analysis through transmission electron microscopy, and electron back scatter diffraction through scanning electron microscopy revealed that the crystal symmetry of the LSMO films changed from monoclinic/orthorhombic to rhombohedral on annealing in air. Curie temperature (T{sub C}) of the LSMO films was found to increase with increasing T{sub a}, and become higher than the room temperature at T{sub a} ≥ 861 °C, indicating that the cause of these changes was the filling of oxygen and the transition of the crystal symmetry into rhombohedral. - Highlights: •Mn-poor LSMO changed from monoclinic/orthorhombic to rhombohedral by oxygen supply. •Mn-poor LSMO was increased T{sub C} by changed crystal symmetry, and it showed T{sub C} above RT. •Annealed in air effectively supplied O{sub 2} more than O{sub 2} gas during sputtering •EBSD is useful to evaluate crystal symmetry of complex oxide film from the substrate.

36 MATERIALS SCIENCE↗

Length-scale-dependent nanoindentation creep behaviour of Ti/Al multilayers by magnetron sputtering

This study presented length-scale-dependent room temperature creep behaviour of Ti/Al multilayers by nanoindentation. Ti/Al multilayers with individual layer thickness ranging from 10 nm to 250 nm were prepared by a direct current magnetron sputtering method. Microstructural analysis showed that the prepared Ti/Al multilayers were polycrystalline, with strong Ti (0002) and Al (111) texture. Nanoindentation creep tests were performed to examine the time-dependent creep deformation, stress exponent, creep strain rate sensitivity and contact creep compliance of the multilayers at room temperature. It was found that both the maximum creep deformation and the creep strain rate sensitivity increase with an increase in the individual layer thickness, indicating a length-scale-dependent creep behaviour of the Ti/Al multilayers. The values of stress exponent were found to lay in the range of 15.74–61.46, implying that the creep behaviour of the multilayers was controlled by the dislocation creep mechanism. Finally, the contact creep compliances of the Ti/Al multilayers were well modelled by a two-element Kelvin-Voigt model. From this, it was determined that the creep numbers and retardation times increased with increased individual layer thickness.

77 NANOSCIENCE AND NANOTECHNOLOGY↗