Search NASA⌕ Search

SEARCH · Search NASA

Results for “Memory”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Mechanisms enabling reconfigurability and long-term retention in vanadium oxide electrochemical memory

Phase coexistence in nanoscale electrochemical random-access memory (ECRAM) has recently been demonstrated to enable both information storage and extraordinary reconfigurability. These proof-of-principle demonstrations have left the mechanistic details of such a process unresolved. Particularly, the mechanisms that stabilize the multiple phases, and the underlying processes behind sustained memory retention, remain unclear, and are necessary to design such devices. Here we report microscale ECRAM devices composed of V⁢O𝑥, which enables us to directly probe the active region in an operando fashion using optical techniques. Using Raman mapping, we show the phase coexistence driven by the electrochemical injection of O vacancies to be spatially uniform (i.e., with no filaments). The stability was observed to be unusually long, with 1% loss over 14 years in ambient conditions. First-principles calculations of the oxygen vacancy formation energies in V⁢O 𝑥 further support the thermodynamic coexistence of multiple V⁢O 𝑥 phases and clarify the origin of the observed long-term retention in the ECRAM devices. Further, we demonstrate single devices that can be voltage programmed to exhibit synaptic, neuronal, and reconfigurable logic gate functionalities. Furthermore, we not only uncover the phase coexistence mechanism that may help device design, but also demonstrate the circuit-level applications of reconfigurability.

Electrical conductivity↗
DOE OSTI2025

Enhancing quantum memory lifetime with measurement-free local error correction and reinforcement learning

Reliable quantum computation requires systematic identification and correction of errors that occur and accumulate in quantum hardware. To diagnose and correct such errors, standard quantum error-correcting protocols utilize global error information across the system obtained by mid-circuit readout of ancillary qubits. We investigate circuit-level error-correcting protocols that are measurement-free and based on local error information. Such a local error correction (LEC) circuit consists of faulty multi-qubit gates to perform both syndrome extraction and ancilla-controlled error removal. We develop and implement a reinforcement learning framework that takes a fixed set of faulty gates as inputs and outputs an optimized LEC circuit. To evaluate this approach, we quantitatively characterize an extension of logical qubit lifetime by a noisy LEC circuit. For the two-dimensional (2D) classical Ising model and four-dimensional toric code, our optimized LEC circuit performs better at extending a memory lifetime compared with a conventional LEC circuit based on Toom's rule in a subthreshold gate error regime. We further show that such circuits can be used to reduce the rate of mid-circuit readouts to preserve a 2D toric code memory. Lastly, we discuss the application of the LEC protocol on dissipative preparation of quantum states with topological phases.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2024

Quantifying Memory in Spin Glasses

Rejuvenation and memory, long considered the distinguishing features of spin glasses, have recently been proven to result from the growth of multiple length scales. This insight, enabled by simulations on the Janus II supercomputer, has opened the door to a quantitative analysis. We combine numerical simulations with comparable experiments to introduce two coefficients that quantify memory. A third coefficient has been recently presented by Freedberg et al. Here, we show that these coefficients are physically equivalent by studying their temperature and waiting-time dependence.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Analog In-Memory Computing for the Synthetic Aperture Radar Polar Format Algorithm

As the utility of synthetic aperture radar (SAR) systems increases in autonomous vehicles, satellites, and other power- and space-constrained edge applications, there is a growing need for processors that can form SAR images at low power. In recent years, analog in-memory compute (AIMC) has shown immense promise for accelerating neural networks and other matrix-vector multiplication (MVM) heavy workloads at the edge. Here, in this work, we examine how the polar format algorithm (PFA), a popular SAR image formation algorithm, can be mapped to these AIMC systems. The PFA maps readily onto analog MVMs because it primarily consists of two linear operations: interpolation of frequency-domain data to a Cartesian grid, followed by a 2-D Fourier transform. This work presents two approaches to map the interpolation operation onto MVMs in analog hardware: a chirp transform and a modified form of sinc interpolation. These mappings introduce algorithmic errors, and their effect on the quality of SAR image formation is examined, both quantitatively and qualitatively. In addition, the impact of errors introduced by the analog hardware is explored to determine which approach is optimal under varying assumptions about the underlying analog memory devices and circuits.

Analog computing↗
DOE OSTI2025

A new era of ferroelectric thin films for nonvolatile memories

Ferroelectric films have potential applications in nonvolatile memory devices. In addition to the well-established perovskite-structure oxide ferroelectrics, hafnia- and wurtzite-based ferroelectrics have recently attracted considerable attention because of the improved scalability of the ferroelectric response (down to nanometer thicknesses), their compatibility with silicon fabrication processes, and the availability of deposition methods that realize three-dimensional structures. Furthermore, due to their high compatibility with silicon processes, these are also expected to be used in emerging energy-efficient applications, such as neuromorphic computing and reservoir computing. In this article, we review the fundamentals of hafnia- and wurtzite-based ferroelectrics and their advantages and issues for developing in nonvolatile memory devices. Then, possible emerging applications are discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Nanoengineered Shape-Memory Hemostat

Uncontrolled hemorrhage is the predominant cause of preventable combat deaths. Various biomaterials serve as hemostatic agents due to their procoagulant or absorptive activity. However, these biomaterials often lack expansion capabilities, which severely limits use in noncompressible wounds. This study combines a hemostatic nanocomposite with a shape-memory polymer foam to design a composite material with both hemostatic and physical expansion properties. This composite is fabricated in two formulations: a foam externally coated in a highly concentrated nanocomposite (“coated composite”) and a foam containing a diluted nanocomposite infused throughout its pores (“infused composite”). Both formulations retain the shape-memory foam's expansion property. Further, the coated composite shows improved fluid uptake (>2-fold) versus infused composites or foam. The nanocomposite component dissociates from the foam under degradative conditions, with the foam remaining stable for 30 days. Hemostatic studies illustrate that the coated composite reduces the clotting time by ≈20%. Alternatively, the infused composite improves clotting over a larger distance (up to ≈2× distance from the composite). These results signify a modular hemostatic ability: the coated composite reduces clotting and improves fluid uptake, while the infused composite achieves diffuse clotting and maintains mechanical properties. Thus, these materials pose a strong potential for use in noncompressible wounds.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2026

Toward memory-efficient melt pool monitoring: a classification framework using event-based imaging and sparse sensing technique

Vision sensors like CMOS and CCD cameras are often used for in-process monitoring of melt pools in laser-based additive and welding processes, but they require transferring large amounts of data and computational processing resources. Event-based neuromorphic imagery, on the other hand, detects only the change in pixel intensity, thus potentially reducing the data amount and latency. With an event imager, this study develops a framework for melt pool condition classification, including image construction, time scale selection, optimal pixel selection, and sparse classification, to achieve a highly memory-efficient scheme. These are based on sparse sensing techniques with singular value decomposition (SVD) and QR pivoting, the two fundamental matrix transformations for linear dimensionality reduction. The framework is then validated by classifying a controlled experiment by exciting various mode shapes of liquid gallium pools of varying depths (3, 6, and 8 mm). At 200 pixels, the classifier can reach overall accuracy of 75%, while at 2000 pixels (0.013% of the total possible pixels), the accuracy is nearly 90% (89.86%). At the same number of pixels, random selection can only achieve 46% and 67%, respectively. The memory savings of the sparsely sampled event data compared to a conventional imager is about 500 times. In addition to performance, implementation and limitations of the framework are also discussed.

42 ENGINEERING↗
DOE OSTI2026

Design, characterization and shape recovery behavior of 3D/4D printed shape memory polymers (SMPs)

Shape memory polymers (SMPs) represent a paradigm shift in material science, uniquely capable of undergoing reversible shape transformations triggered by external stimuli, positioning them as pivotal in developing next-generation biomedical devices, aerospace components, and adaptive structures. Extensive research has been done on SMPs with a major focus on high-temperature programming methods, which can limit energy efficiency and applicability with temperature-sensitive materials. Additionally, while various SMP blends have demonstrated great potential, limited work has been done on the suitability for 3D printing these materials, particularly under high-strain and ambient temperature programming conditions. In this study, a three-component optimized SMP composition was evaluated by 3D printing via the Material Extrusion (MEX) technique and investigating its ambient temperature-programming behavior at high strains. The SMP formulation studied was a tailored blend of thermoplastic polyurethane (TPU), polycaprolactone (PCL), and an octadecane diol-based copolymer (OBC) that exhibits robust shape memory behavior, high strain tolerance, and efficient force generation. Rigorous thermal, mechanical, and shape recovery analyses, along with optimized printing parameters and consistent shape recovery rates of up to 90%, were achieved under dynamic mechanical analysis (DMA), even under ambient programming conditions. This work demonstrates the SMP composition’s potential for adaptive, self-deployable systems with 4D printing characteristics ideal for bio-inspired structures and artificial muscle fibers.

Sudan, Kavish [University of Louisville, KY]↗
DOE OSTI2026

Relaxor Ferroelectric-Like Spatiotemporal Memory in Field-Driven Lipid Bilayers

Lipid membranes are often regarded as passive barriers, yet their nonlinear dielectric response remains poorly understood. Using all-atom molecular dynamics, we show that fully hydrated dipalmitoylphosphatidylcholine bilayers exhibit relaxor ferroelectric-like behavior under time-dependent electric fields. Unlike crystalline relaxors, which are bipolar and display little remanent polarization, lipid bilayers exhibit a unipolar polarization response: even an alternating current field produces persistent, asymmetric polarization. Furthermore, the underlying free-energy landscape contains two distinct minima, a nonpolarized state and a unipolarly polarized state, between which stochastic thermally activated transitions occur. Directionally resolved Van Hove analysis reveals pronounced anisotropy arising from out-of-plane electric dipole alignment, interleaflet coupling, and lateral polarization domains. Each field cycle nucleates polarization at distinct sites and monitors their relaxation, marking a crossover from thermal fluctuations to field-sustained polarization. Remarkably, these polarized domains persist after field removal, generating long-lived, spatially coherent dipolar patterns that encode nanoscale polarization memory. Potassium chloride amplifies these effects via dielectric screening and a modified hydration structure, enhancing electric dipole flexibility and cooperativity. Together, these results establish protein-free bilayers as nonlinear, history-dependent dielectrics capable of sustaining field-tunable electromechanical coupling, providing an emergent physical foundation for nanoscale information storage and memory phenomena reminiscent of short- and long-term plasticity in soft neuromorphic systems.

Insulators↗
DOE OSTI2026

Inductance meets memory in a quantum magnet

Orbital degrees of freedom offer a largely untapped route to emergent dynamical phenomena in correlated quantum materials. However, it remains unclear whether collective orbital states can intrinsically generate both reactive and memory functionalities in a bulk system. Here we show that in the ferrimagnet Mn₃Si₂Te₆, nonequilibrium reconfiguration of chiral orbital currents produces both emergent inductance and nonvolatile memristance as intrinsic properties of a single crystal. At low frequency and under a magnetic field along the c axis, coherent orbital-current domains generate robust clockwise inductive I-V loops. At higher frequency and low field, current-driven first-order reconfiguration leads to incomplete reversal and metastable trapping, producing an intrinsic electromotive force and a finite remanent voltage at zero current. These results establish orbital currents as a class of quantum state variables that encode both reactive and memory functionalities, opening routes toward intrinsically reconfigurable and energy-efficient electronic systems.

Cao, Tristan [University of Colorado, Boulder]↗
DOE OSTI2025

Gravitational memory and Ward identities in the local detector frame

Gravitational memory, which describes the permanent shift in the strain after the passage of gravitational waves, is directly related to Weinberg’s soft graviton theorems and the Bondi-Metzner-Sachs (BMS) symmetry group of asymptotically flat space-times. In this work, we provide an equivalent description of the phenomenon in local coordinates around gravitational wave detectors, such as transverse-traceless (TT) gauge. We show that gravitational memory is encoded in large residual diffeomorphisms in this gauge, which include time-dependent anisotropic spatial rescalings, and prove their equivalence to BMS transformations when translated to TT gauge. We then derive the associated Ward identities and associated soft theorems, for both scattering amplitudes and equal-time (in-in) correlation functions, and explicitly check their validity for planar gravitational waves. Furthermore, the in-in identities are recognized as the flat-space analog of the well-known inflationary consistency relations.

General relativity↗
DOE OSTI2025

Learning efficient erasure protocols for an underdamped memory

Here we apply evolutionary reinforcement learning to a simulation model to identify efficient time-dependent erasure protocols for a physical realization of a 1-bit memory using an underdamped mechanical cantilever. We show that these protocols, when applied to the cantilever in the laboratory, are considerably more efficient than our best hand-designed protocols. The learned protocols allow reliable high-speed erasure by minimizing the heating of the memory during its operation. More generally, the combination of methods used here opens the door to the rational design of efficient protocols for various physics applications.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2024

Kondo enabled transmutation between spinons and superconducting vortices: Origin of magnetic memory in 4 H b − TaS 2

Recent experiments [Persky , ] demonstrate a magnetic memory effect in 4 H b − TaS 2 above its superconducting transition temperature, where Abriokosov vortices are spontaneously generated by lowering the temperature at zero magnetic field after field training the normal state. Motivated by the experiment, we propose the chiral quantum spin liquid (QSL) stabilized in the constituent layers of 4 H b − TaS 2 as a mechanism. We model 4 H b − TaS 2 as coupled layers of the chiral QSL and the superconductor. Through the Kondo coupling between the localized moments and conduction electrons, there is mutual transmutation between spinons and vortices during the thermal-cycling process, which yields the magnetic memory effect observed in experiments. We also propose a mechanism to stabilize chiral and nematic superconductivity in 4 H b − TaS 2 through the Kondo coupling of conduction electrons to the chiral QSL. Our picture suggests 4 H b − TaS 2 as an exciting platform to explore the interplay between QSL and superconductivity through the Kondo effect. Published by the American Physical Society 2024

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Amorphous Indium Oxide Channel FEFETs With Write Voltage of 0.9 V and Endurance >10 12 for Refresh-Free Embedded Memory

This work presents, for the first time, a back-end-of-the-line (BEOL)-compatible W-doped indium oxide (IWO) ferroelectric field-effect transistor (FEFET) with a record-low operating voltage below 0.9 V and a write speed of 20 ns while achieving a transient read current window (CW) ratio ( I LVT /I HVT ) greater than 10 4 . The device also exhibits exceptional reliability characteristics such as: 1) measured bipolar write endurance up to 10 12 cycles; 2) a fast read speed of 50 ns; 3) read endurance surpassing 10 12 cycles; and 4) retention exceeding 10 4 s at 85 ∘ C. Furthermore, a physics-based numerical model has been developed to investigate the nanoscale characteristics of BEOL FEFET devices, leveraging nucleation-limited switching in HfO 2 ferroelectrics and dc characterization to extract material and channel parameters for accurate device simulation. The simulation uncovers the stochastic switching behavior of BEOL amorphous oxide semiconductor (AOS) FEFETs and demonstrates an intrinsic switching time as low as 1 ps, highlighting the potential of BEOL AOS FEFETs for ultrafast memory applications. These results establish AOS FEFETs as a compelling candidate for high-density embedded memory applications for last-level cache (LLC) (L4) in advanced CMOS technology nodes.

1-V ferroelectric field-effect transistor (FEFET)↗
DOE OSTI2024

Ultrafast high-endurance memory based on sliding ferroelectrics

The persistence of voltage-switchable collective electronic phenomena down to the atomic scale has extensive implications for area- and energy-efficient electronics, especially in emerging nonvolatile memory technology. We investigate the performance of a ferroelectric field-effect transistor (FeFET) based on sliding ferroelectricity in bilayer boron nitride at room temperature. Sliding ferroelectricity represents a different form of atomically thin two-dimensional (2D) ferroelectrics, characterized by the switching of out-of-plane polarization through interlayer sliding motion. We examined the FeFET device employing monolayer graphene as the channel layer, which demonstrated ultrafast switching speeds on the nanosecond scale and high endurance exceeding 10 11 switching cycles, comparable to state-of-the-art FeFET devices. These characteristics highlight the potential of 2D sliding ferroelectrics for inspiring next-generation nonvolatile memory technology.

Science & Technology - Other Topics↗
DOE OSTI2024

Synchronization for CXL Based Memory

Compute Express Link (CXL) is an important emerging standard for disaggregated memory. While this standard provisions coherency across numerous hosts and devices, implementing hardware support for type three devices is challenging. In this work, we look at the overhead of software synchronization and using software-based coherency. Moreover, we discuss the limits of software-based coherency in fully expressing modern synchronization techniques for a CXL-based disaggregate memory system. We demonstrate our approach using a CXL hardware prototype and running a version of the famous Peterson Lock (enhanced to run with more than two threads). We analyze its performance and share how more advanced synchronization techniques might interact with software-based coherence CXL hardware and program execution models.

High Performance Computing (HPC)↗
DOE OSTI2024

Studying CPU and memory utilization of applications on Fujitsu A64FX and Nvidia Grace Superchip

ARM-based manycore CPU architectures are well-positioned to provide the rising memory throughput requirements of modern data intensive scientific applications in High Performance Computing (HPC). The Fujitsu A64FX CPU platform is based on the ARM v8.2A architecture, and is the processor of the flagship Japanese supercomputer - "Fugaku", which was previously ranked as the #1 supercomputer in the world according to the Top500 list. The Nvidia Grace superchip features 144 Neoverse V2 cores based on the ARMv9 architecture with 4x128b SVE2, providing exceptional computational power. The chip supports up to 480GB of memory, making it ideal for AI, machine learning, and scientific computing workloads. In this paper, we conduct a thorough performance exploration of a variety of parallel bandwidth-sensitive benchmarks and applications compiled with the native Fujitsu compiler on a Fugaku A64FX compute node and ARM (LLVM) Compiler on an NVIDIA Grace superchip compute node, engaging all the computational cores per cluster using OpenMP multithreading (assuming the cores can drive the available bandwidth). Our ultimate goals are to study the resource utilization of scientific applications and benchmarks on A64FX and Grace superchip, considering graph application scenarios ( GAP Benchmark suite) and eleven appli- cation proxies from the Rodinia heterogeneous benchmark suite (considering domains such as Data Mining, Bioinformatics, Fluid Dynamics, Pattern Recognition, etc.). Through exhaustive performance monitoring, we quantify the resource utilization of diverse OpenMP-based HPC applications on both the Fujitsu A64FX and the Nvidia Grace Superchip platforms.

benchmarking, Performance Analysis, High performan↗
DOE OSTI2024

Controlling reversible phase transitions in rare-earth nickelates for novel memory devices

Resistive switching in correlated complex oxides is lucrative for emerging applications in neuromorphic computing, and densely scaled non-volatile memory. Electrical conductance of such complex oxides can be controllable switched across multiple orders of magnitude by either (a) electroforming a conduction channel (e.g., in tungsten oxide), or (b) inducing Mott-Hubbard transition (e.g., in rare-earth nickelates)– both via controlled migration of defects (such as oxygen vacancies) under applied bias. Nevertheless, the promise of such defect-driven electronic transitions are far from realized due to a lack of fundamental understanding of the atomic-scale processes that underlie migration and spatiotemporal evolution of oxygen vacancies over nano-to-mesoscopic length/timescales under applied electric field. In this project, we employ a synergistic integration of density functional theory (DFT) calculations, ab initio/classical molecular dynamics (AIMD/CMD) simulations, machine learning (ML), precision synthesis, and multi-modal X-ray imaging experiments to address this knowledge gap. Such an integrated approach offers to elucidate the correlations between subtle structural distortion and oxidation states; treat localized charge carriers; describe defect/ion transport in the presence of electric field; and, in turn, greatly advance the current understanding of microstructural evolution in complex oxides under applied bias. The fundamental knowledge gained from this work will enable precise control over hierarchical defect structures and unravel new routes to manipulate resistance states in complex oxides. This, in turn, will accelerate design of novel devices with desired set of neural functionalities, and high-speed densely-scaled resistive random access memory technologies.

36 MATERIALS SCIENCE↗