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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS1999

NEPP Cots Mems Programs

Explore the source record for details and available documents.

COTS Microelectromechanical Systems MEMS reliabili↗
NASA NTRS2008

SiC vs. Si for High Radiation Environments: NASA Electronic Parts and Packaging (NEPP) Program Office of Safety and Mission Assurance

Commercial silicon carbide and silicon Schottky barrier power diodes have been subjected to 203 MeV proton irradiation and the effects of the resultant displacement damage on the I-V characteristics have been observed. Changes in forward bias I-V characteristics are reported for fluences up to 4 x 10(exp 14) p/cm2. For devices of both material types, the series resistance is observed to increase as the fluence increases. The changes in series resistance result from changes in the free carrier concentration due to carrier removal by the defects produced. A simple model is presented that allows calculation of the series resistance of the device and then relates the carrier removal rate to the changes in series resistance. Using this model to calculate the carrier removal rate in both materials reveals that the carrier removal rate in silicon is less than that in silicon carbide, indicating that silicon is the more radiation tolerant material.

Schottky barrier power diodes↗
NASA NTRS2008

Fiber Amplifier Report for NEPP 2008

Ongoing qualification activities of LiNbO3 modulators. Passive (unpumped) radiation testing of Er-, Yb-, and Er/Yb-doped fibers: a) Yb-doped fibers exhibit higher radiation resistance than Er-doped fibers; b) Er/Yb co-doped fibers exhibit largest radiation resistance. Active (pumped) radiation testing of Yb-doped fibers conducted at NASA GSFC: a) Typical decay behavior observed; b) No comparison could be made to other fibers due to problems with test setup. Development of new high power fiber terminations.

Thomes, Joe↗
NASA NTRS2009

On Nibbles and Bytes: The Conundrum of Memory for Space Systems - NASA Electronic Parts and Packaging (NEPP) and Efforts in Memories

Radiation requirements and trends. TID: 1) >90% of NASA applications are < 100 krads-Si in piecepart requirements. a) Many commercial devices (NVM and SDRAMs) meet or come close to this. b) Charge pump TID tolerance has improved an order magnitude over the last 10 years. 2) There are always a few programs with higher level needs and, of course, defense needs SEL: 1) Prefer none or rates that are considered low risk. a) Latent damage is a bear to deal with. 2) As we re packing cells tighter and even with lower Vdd, we re seeing SEL on commercial devices regularly (<90nm). a) Often in power conversion, I/O, or control areas. SEU: 1) It s not the bit errors, it s the SEFIs errors that are the biggest issues. a) Scrubbing concerns for risk, power, speed.

LaBel, Kenneth A.↗
NASA NTRS2010

Evaluation of Small Form Factor Fiber Optic Interconnects for the NASA Electronics Parts and Packaging Program (NEPP)

The Diamond AVIM optical fiber connector has been used for over a decade in flight environments. AVIM which stands for Aviation Intermediate Maintenance is always referenced as a fiber optic connector type from the DIN (Deutsches Institut fur Normung) family of optical fiber connectors. The newly available Mini AVIM and DMI (Definition Multimedia Interface) connectors also by Diamond provide similar features as the high performance AVIM with the added benefits of being small form factor for board mount and internal box use where long connectors and strain relief can not be accommodated. Transceiver, fiber laser technology and receiver optic technology based on small sized constraints will benefit the most by the reduction in connector form factor. It is for this reason that the Mini AVIM is being evaluated for multimode and single mode optical fiber use in both fiber based and cable based packaging configurations. In a fiber based termination, there are no cable materials to bond to the connector. The only bonding that is conducted is the mounting of the fiber with epoxy to the connector ferrules (which are called DMI ferrules). In a cable configuration, the compatibility of the connector subcomponents along with the upjacketing materials of the cable around the fiber needs to be considered carefully for termination fabrication. Cabled terminations will show greater insertion loss and high probability of failures during thermal cycling testing. This is due to the stressing of the combination of materials that each have different Coefficients of Thermal Expansion (CTE's) and that are bonded together to the connector subcomponents. As the materials flex during thermal excursions, forces are applied to the termination and can make the system fail if the grouping of materials (per their CTE's) are not compatible and this includes cable materials, epoxies, ferrule and connector body components. For this evaluation, multimode 100 micron core step index fiber was used for the fiber terminated condition, and single mode SMF-28 upjacketed with W.L. Gore Flexlite was used for the cabled configuration. For background purposes, a comparison is presented here for information purposes between the high performance AVIM connector features and the Mini AVIM small form factor connectors. Basic connector features are described here.

Ott, Melanie↗
NASA NTRS2011

Capacitor Test, Evaluation. and Modeling Within NASA Electronic Parts and Packaging (NEPP) Program. "Why Ceramic Capacitors Fracture During Manual Soldering and How to Avoid Failures"

Presentation discusses: (1) Why Multi-Layer Ceramic Capacitors(MLCCs) crack during manual soldering? Workmanship and parts issues. (2) Do existing qualification requirements assure crack-free soldering? MIL-spec Thermal Shock (TS) testing. MIL-spec Resistance to Soldering Heat (RSH) test. (3) What test can assure reliable soldering? Mechanical characteristics of ceramics. Comparison of three TS techniques: LND, TSD, and IWT. (4) Simulation of TS conditions.

Teverovsky, Alexander↗
NASA NTRS2011

Investigation of the Semicoa SCF9550 and the International Rectifier IRHM57260SE for Single-Event Gate Rapture and Single-Event Burnout : NASA Electronic Parts and Packaging (NEPP) Program Office of Safety and Mission Assurance

Single-event-effect test results for hi-rel total-dose-hardened power MOSFETs are presented in this report. TheSCF9550 from Semicoa and the IRHM57260SE from International Rectifier were tested to NASA test condition/standards and requirements.The IRHM57260SE performed much better when compared to previous testing. These initial results confirm that parts from the Temecula line are marginally comparable to the El Segundo line. The SCF9550 from Semicoa was also tested and represents the initial parts offering from this vendor. Both parts experienced single-event gate rupture (SEGR) and single-event burnout (SEB). All of the SEGR was from gate to drain.

Single Event Gate Rupture↗
NASA NTRS2011

Users Guide on Scaled CMOS Reliability: NASA Electronic Parts and Packaging (NEPP) Program Office of Safety and Mission Assurance

Reliability of advanced CMOS technology is a complex problem that is usually addressed from the standpoint of specific failure mechanisms rather than overall reliability of a finished microcircuit. A detailed treatment of CMOS reliability in scaled devices can be found in Ref. 1; it should be consulted for a more thorough discussion. The present document provides a more concise treatment of the scaled CMOS reliability problem, emphasizing differences in the recommended approach for these advanced devices compared to that of less aggressively scaled devices. It includes specific recommendations that can be used by flight projects that use advanced CMOS. The primary emphasis is on conventional memories, microprocessors, and related devices.

Scaled CMOS↗
NASA NTRS2014

2014 NEPP Tasks Update for Ceramic and Tantalum Capacitors

Presentation describes recent development in research on MnO2, wet, and polymer tantalum capacitors. Low-voltage failures in multilayer ceramic capacitors and techniques to reveal precious metal electrode (PME) and base metal electrode (BME) capacitors with cracks are discussed. A voltage breakdown technique is suggested to select high quality low-voltage BME ceramic capacitors.

ceramic capacitors↗