Search NASA⌕ Search

SEARCH · Search NASA

Results for “Non-Volatile”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

A Survey on the Expanding Scope and Interdisciplinary Opportunities for Processing-in-Memory Techniques

Processing-in-Memory (PIM) is emerging as a practical path to overcome the limitations of traditional von Neumann architectures. At its core, PIM systems implement computing primitives such as logic operations and multiply-accumulate acceleration through compute-in-memory, near-memory processing, or hybrid designs. The role of memory cells varies widely across technologies, acting as inputs, outputs, or analog accumulators through bit-lines and sense amplifiers. This diversity creates trade-offs in precision, bandwidth, latency, and programmability, making it difficult to build a unified understanding on the progress of the field. In this survey, we organize recent advances of PIM into three areas. First, we discuss the progress on the architectural optimizations of PIM and its integration with both DRAM and emerging non-volatile memories. Second, we examine how PIM is being used to accelerate key computing domains, including generative AI workloads and high-performance kernels, along with new approaches. Third, we highlight the growing adoption of PIM in computational sciences, where it is being applied to solve interdisciplinary problems such as genome analysis, mRNA quantification, mass spectrometry, quantum circuit simulation, wave modeling, and secure computation. Finally, we synthesize the major challenges that continue to slow PIM adoption, including manufacturing constraints, power delivery, thermal reliability, data consistency, runtime and memory-management coordination, and the difficulty of building portable software abstractions without sacrificing commercial viability. This work provides an updated, structured perspective on PIM’s potential across computing and computational sciences and the barriers that must be solved for it to reach its full impact.

Asifuzzaman, Kazi [Oak Ridge National Laboratory (↗
DOE OSTI2024

Device Feasibility Analysis of Multi-level FeFETs for Neuromorphic Computing

As an emerging non-volatile memory device technology, Ferroelectric Field-Effect Transistors (FeFETs) can enable low-power, adaptive intelligent system design. However, device dimension and operating voltage dependent reliability issues of scaled FeFETs can ultimately lead to degraded performance in solving machine learning tasks. In this article, detailed experimental characterization of FeFET devices of different dimensions have been carried out to explicitly evaluate the non-ideal behavior in device conductance programming properties like number of programming states, cycle-to-cycle (C2C) variations, device-to-device (D2D) variations, and state retention. A hardware-aware software simulation approach has been adopted to capture the adversarial effects of the non-idealities on recognition accuracy through algorithm-level performance assessment by including them in NeuroSim, a popular neural network hardware simulator, to execute a neural network model considering all other hardware constraints. With the added non-idealities, significant accuracy degradation has been observed compared to the ideal scenarios where D2D variations play the most critical role. Thereafter, feasibility of a variation-aware training method has been evaluated to tackle the accuracy drop.

42 ENGINEERING↗
DOE OSTI2022

Neuromorphic Accelerator for Deep Spiking Neural Networks with NVM Crossbar Arrays

In this paper, we present a scalable digital hardware accelerator based on non-volatile memory arrays capable of realizing deep convolutional spiking neural networks (SNNs). Our design studies are conducted using a compact model for spin-transfer torque random access memory (STT-RAM) devices. Large networks are realized by tiling multiple cores which communicate by transmitting spike packets via an on-chip routing network. Compared to an equivalent SRAM based core design, we show that the STT-RAM based design achieves nearly 15X higher GSOPS (Synaptic Operations per Second) per Watt per mm 2 making it a promising platform for realizing systems with significant area and power limitations.

Kulkarni, Shruti↗
DOE OSTI2025

UltraLiM: In-Memory Boolean Logic Architecture Using UltraRAM

Conventional computing architectures encounter ‘von Neumann’ and ‘memory wall’ bottlenecks which arise due to the back-and-forth data movement between the physically separate memory and processing units and the speed mismatch between them, respectively. These bottlenecks hurt both energy efficiency and the throughput of computing systems. To address these challenges, in-memory computing architectures have emerged as a promising alternative. They reduce the need for frequent data movement by executing different computing tasks inside the memory system. Here, we present UltraLiM, a logic-in-memory architecture using the UltraRAM-based memory system. UltraRAM holds the promise of developing a ‘universal memory’, overcoming the limitations of charge-based memories thanks to their non-volatile behavior with lower operating voltage. This work presents an in-memory computing architecture that integrates an UltraRAM-based memory array with a custom-designed peripheral circuitry. With this architecture, we can perform various in-memory Boolean logic operations (such as NOT, NAND, NOR, and XOR) in a single cycle. Leveraging the separate read-write paths in the UltraRAM-based memory array, we optimize read operations without encountering design conflicts. This optimization enhances the sense margin, enabling the use of simpler peripheral circuitry for in-memory logic operations.

Alam, Shamiul [University of Tennessee, Knoxville ↗
DOE OSTI2022

PUF-Based Two-Factor Authentication Protocol for Securing the Power Grid Against Insider Threat

Recent advances in smart grid technologies have enabled additional distributed control paradigms that allow more efficient and reliable operation. However, this creates new security concerns for the grid, such as attackers using spoofed grid control devices to generate false measurements. This paper introduces a two-factor authentication protocol leveraging standard public-key cryptography as one authentication factor and a hardware-based fingerprint, known as a Physical Unclonable Function, as a second authentication factor. This protocol incurs a small overhead and prevents cyber-attacks even when an adversary is able to compromise the cryptographic keys stored in the non-volatile memory of an intelligent control device.

42 ENGINEERING↗
DOE OSTI2025

Single-Cell Universal Logic-in-Memory Using 2T-nC FeRAM: An Area and Energy-Efficient Approach for Bulk Bitwise Computation

This work presents a novel approach to configure 2T-nC ferroelectric RAM (FeRAM) for performing single cell logic-in-memory operations, highlighting its advantages in energy-efficient computation over conventional DRAM-based approaches. Unlike conventional 1T-1C dynamic RAM (DRAM), which incurs refresh overhead, 2T-nC FeRAM offers a promising alternative as a non-volatile memory solution with low energy consumption. Our key findings include the potential of quasi-nondestructive readout (QNRO) sensing in 2T-nC FeRAM for logic-in-memory (LiM) applications, demonstrating its inherent capability to perform inverting logic without requiring external modifications, a feature absent in traditional 1T-1C DRAM. We successfully implement the MINORITY function within a single cell of 2T-nC FeRAM, enabling universal NAND and NOR logic, validated through SPICE simulations and experimental data. Additionally, the research investigates the feasibility of 3D integration with 2T-nC FeRAM, showing substantial improvements in storage and computational density, facilitating bulk-bitwise computation. Our evaluation of eight real-world, data-intensive applications reveals that 2T-nC FeRAM achieves 2× higher performance and 2.5× lower energy consumption compared to DRAM. Furthermore, the thermal stability of stacked 2T-nC FeRAM is validated, confirming its reliable operation when integrated on a compute die. These findings emphasize the advantages of 2T-nC FeRAM for LiM, offering superior performance and energy efficiency over conventional DRAM.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Flexible and Effective Object Tiering for Heterogeneous Memory Systems

Computing platforms that package multiple types of memory, each with their own performance characteristics, are quickly becoming mainstream. To operate efficiently, heterogeneous memory architectures require new data management solutions that are able to match the needs of each application with an appropriate type of memory. As the primary generators of memory usage, applications create a great deal of information that can be useful for guiding memory tiering, but the community still lacks tools to collect, organize, and leverage this information effectively. To address this gap, this work introduces a novel software framework that collects and analyzes object-level information to guide memory tiering. Using this framework, this study evaluates and compares the impact of a variety of data tiering choices, including how the system prioritizes objects for faster memory as well as the frequency and timing of migration events. The results, collected on a modern Intel platform with conventional DRAM as well as non-volatile RAM, show that guiding data tiering with object-level information can enable significant performance and efficiency benefits compared to standard hardware- and software-directed data tiering strategies.

Kammerdiener, Brandon↗
DOE OSTI2024

UMap: An application-oriented user level memory mapping library

Exploiting the prominent role of complex memories in exascale node architecture, the UMap page fault handler offers new capabilities to access large memory-mapped data sets directly. UMap provides flexible configuration options to customize page handling to each application, including analysis of massive observational and simulation data sets. The high-performance design features I/O decoupling, dynamic load balancing, and application-level controls. Page faults triggered by application threads and processes accessing data mapped to a UMapp’ed region are handled via the Linux userfaultfd protocol, an asynchronous message-oriented kernel-user communication mechanism that avoids the context switch penalty of traditional signal fault handlers. UMap is fully open source. In this paper, we give an overview of the UMap library architecture, its extensible plugin architecture, and the use/performance of UMap in emerging heterogeneous memory hierarchies such as near-node Non-volatile Memory (NVM) and network attached memories. We highlight new capabilities in two pagefault management plugins, the NetworkStore and SparseStore. We demonstrate the integration between UMap and multiple ECP products including Caliper, Metall, ZFP, Mochi, and Ripples.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2022

Temporal and spatial tuning of optical constants in praseodymium doped ceria by electrochemical means

Abstract Temporal and spatial tuning of the refractive index of optical thin films is desired for flat optics applications. The redistribution of mobile ions in mixed ionic-electronic conductors (MIEC) has been demonstrated to serve as a viable means for achieving optical tuning down to the nanoscale. Here we studied the dynamic range of the optical tuning achievable in the refractive index, in the MIEC oxide – Pr x Ce 1− x O 2− δ (PCO), for x = 0.1, 0.2 and 0.4, at 500 °C, by in-situ spectrophotometry. Significant increases in the modulation of both the imaginary and real optical constants in the visible and the adjacent spectra were obtained for increased doping levels. Device employing an electrochemical titration method was implemented to modulate the oxygen concentration, and thereby the optical transmission of PCO. Incorporation of a patterned top electrode allowed for the demonstration of spatial control of PCO thin film properties by in-situ video imaging of the optical switching process. The electrochemically induced optical state is shown to remain non-volatile upon quenching the device to room temperature under applied bias.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Probabilistic Nanomagnetic Memories for Uncertain and Robust Machine Learning

This project evaluated the use of emerging spintronic memory devices for robust and efficient variational inference schemes. Variational inference (VI) schemes, which constrain the distribution for each weight to be a Gaussian distribution with a mean and standard deviation, are a tractable method for calculating posterior distributions of weights in a Bayesian neural network such that this neural network can also be trained using the powerful backpropagation algorithm. Our project focuses on domain-wall magnetic tunnel junctions (DW-MTJs), a powerful multi-functional spintronic synapse design that can achieve low power switching while also opening the pathway towards repeatable, analog operation using fabricated notches. Our initial efforts to employ DW-MTJs as an all-in-one stochastic synapse with both a mean and standard deviation didn’t end up meeting the quality metrics for hardware-friendly VI. In the future, new device stacks and methods for expressive anisotropy modification may make this idea still possible. However, as a fall back that immediately satisfies our requirements, we invented and detailed how the combination of a DW-MTJ synapse encoding the mean and a probabilistic Bayes-MTJ device, programmed via a ferroelectric or ionically modifiable layer, can robustly and expressively implement VI. This design includes a physics-informed small circuit model, that was scaled up to perform and demonstrate rigorous uncertainty quantification applications, up to and including small convolutional networks on a grayscale image classification task, and larger (Residual) networks implementing multi-channel image classification. Lastly, as these results and ideas all depend upon the idea of an inference application where weights (spintronic memory states) remain non-volatile, the retention of these synapses for the notched case was further interrogated. These investigations revealed and emphasized the importance of both notch geometry and anisotropy modification in order to further enhance the endurance of written spintronic states. In the near future, these results will be mapped to effective predictions for room temperature and elevated operation DW-MTJ memory retention, and experimentally verified when devices become available.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2024

Controlling reversible phase transitions in rare-earth nickelates for novel memory devices

Resistive switching in correlated complex oxides is lucrative for emerging applications in neuromorphic computing, and densely scaled non-volatile memory. Electrical conductance of such complex oxides can be controllable switched across multiple orders of magnitude by either (a) electroforming a conduction channel (e.g., in tungsten oxide), or (b) inducing Mott-Hubbard transition (e.g., in rare-earth nickelates)– both via controlled migration of defects (such as oxygen vacancies) under applied bias. Nevertheless, the promise of such defect-driven electronic transitions are far from realized due to a lack of fundamental understanding of the atomic-scale processes that underlie migration and spatiotemporal evolution of oxygen vacancies over nano-to-mesoscopic length/timescales under applied electric field. In this project, we employ a synergistic integration of density functional theory (DFT) calculations, ab initio/classical molecular dynamics (AIMD/CMD) simulations, machine learning (ML), precision synthesis, and multi-modal X-ray imaging experiments to address this knowledge gap. Such an integrated approach offers to elucidate the correlations between subtle structural distortion and oxidation states; treat localized charge carriers; describe defect/ion transport in the presence of electric field; and, in turn, greatly advance the current understanding of microstructural evolution in complex oxides under applied bias. The fundamental knowledge gained from this work will enable precise control over hierarchical defect structures and unravel new routes to manipulate resistance states in complex oxides. This, in turn, will accelerate design of novel devices with desired set of neural functionalities, and high-speed densely-scaled resistive random access memory technologies.

36 MATERIALS SCIENCE↗
DOE OSTI2025

SULI Deliverables Using: Python-B1500 [Slides]

A new electrical setup for testing ECRAM devices is described in this presentation. This presentation details the background of ECRAM devices, how the B1500 is used to program ECRAM devices, and the python GUI that was created for controlling the B1500. ECRAM devices are a form of non-volatile memory. The stored data is the resistance between two of the terminals on the device. Using only the B1500, the ECRAM devices can be programmed and the state read out. This creates a simple, logical testing setup. The overall setup was successful, ECRAM devices could easily be programmed and measured. However, there is still room for improvement. Specifically, in the creation of an automated “Program” feature and a “Data Collection” feature. These features will require additional advances in the understanding of ECRAM devices but will greatly automate and improve the current data collection and application of ECRAM devices.

42 ENGINEERING↗
DOE OSTI2026

Deciphering and Manipulating Low Dimensional Magnetism

This program investigates the electronic structure and collective quantum phenomena of correlated magnetic materials using advanced angle-resolved photoemission spectroscopy (ARPES) and complementary probes, with a focus on three interrelated material families: (i) the semiconducting van der Waals magnet Cr₂Ge₂Te₆, (ii) metallic Fe-based van der Waals magnets including Fe₃GeTe₂ Fe₃GaTe₂, and Fe5GeTe₂, and (iii) kagome magnets such as FeGe, FeSn, and CsV₃Sb₅/CsCr₃Sb₅. In Cr₂Ge₂Te₆, our work established how spin excitations develop across a dimensional crossover as spins establish correlation to form long range order, providing a clean platform to isolate correlation effects. In metallic Fe-based magnets, we uncovered the dichotomy between flat and dispersive bands, revealed momentum-dependent electronic reconstructions tied to magnetic order, and demonstrated reversible, non-volatile electronic switching near room temperature, highlighting the strong coupling among spin, charge, and lattice degrees of freedom in metallic ferromagnets. In kagome magnets, we identified charge density wave formation, symmetry breaking, flat-band renormalization, and field-induced momentum-dependent electronic anisotropy, elucidating how geometric frustration and electronic correlations conspire to generate emergent quantum states. Collectively, these results establish a unified microscopic framework for understanding correlation-driven electronic reconstruction, symmetry breaking, and collective order across semiconducting and metallic magnetic systems, advancing DOE mission goals in quantum materials discovery and control.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Probing Dynamic Phase Changes in Electrochemical Systems with Cryogenic and in Situ Analytical Electron Microscopy (Final Technical Report)

In this project, we focus on the advancement of our newly developed, unique in situ and cryogenic analytical electron microscopy (AEM) techniques and the development of additional high-end capabilities to quantitatively elucidate the mechanisms of resistive state changes in solid-state electrochemical materials for non-volatile, neuromorphic memory. The objectives of the proposed research are (1) to characterize and elucidate the mechanisms by which electronic state changes occur in various solid-state devices to build guiding principles for electrochemically activated smart materials; (2) to advance our understanding of such mechanisms by coupling cryogenic and in situ techniques to control kinetics of the observed mechanisms while mitigating probe-induced damage; and (3) to utilize additional advanced techniques including electron-beam induced current and quantum mechanical simulations in order to identify the underlying fundamental science of such processes, including roles of defect formation and its effect on phase nucleation, as well as dynamics of these processes in the electrochemical systems at the nanometer scale.

25 ENERGY STORAGE↗
DOE OSTI2021

Systems and methods for rapid processing and storage of data

Systems and methods of building massively parallel computing systems using low power computing complexes in accordance with embodiments of the invention are disclosed. A massively parallel computing system in accordance with one embodiment of the invention includes at least one Solid State Blade configured to communicate via a high performance network fabric. In addition, each Solid State Blade includes a processor configured to communicate with a plurality of low power computing complexes interconnected by a router, and each low power computing complex includes at least one general processing core, an accelerator, an I/O interface, and cache memory and is configured to communicate with non-volatile solid state memory.

Stalzer, Mark A.↗
DOE OSTI2022

Antiferromagnetic memory storage devices from magnetic transition metal dichalcogenides

Switchable antiferromagnetic (AFM) memory devices are provided based on magnetically intercalated transition metal dichalcogenides (TMDs) of the form AxMC2, where A is a magnetic element of stoichiometry x between 0 and 1, M is a transition metal of stoichiometry 1, and C is a chalcogen of stoichiometry 2. Memory storage is achieved by fabricating these materials into crosses of two or more bars and driving DC current pulses along the bars to rotate the AFM order to a fixed angle with respect to the current pulse. Application of current pulses along different bars can switch the AFM order between multiple directions. Standard resistance measurements can detect the orientation of the AFM order as high or low resistance states. The state of the device can be set by the input current pulses, and read-out by the resistance measurement, forming a non-volatile, AFM memory storage bit.

Analytis, James G.↗
DOE OSTI2023

Gel electrolyte composite including ionic liquid and zwitterionic polymer scaffold

A gel electrolyte composite containing a nonvolatile electrolyte and a zwitterionic polymer scaffold in which the non-volatile electrolyte is a non-lithium-containing ionic liquid, a sodium-containing ionic liquid, or a lithium-containing ionic liquid and the zwitterionic polymer scaffold is formed from one or more zwitterionic monomers only or both one or more zwitterionic monomers and one or more non-zwitterionic monomers. The zwitterionic polymer scaffold contains 8 mol % or higher of zwitterions relative to the total content of the gel electrolyte composite when the nonvolatile electrolyte is a non-lithium-containing ionic liquid, and contains 1 mol % or higher of zwitterions relative to the total content of the gel electrolyte composite when the nonvolatile electrolyte is a sodium-containing ionic liquid or a lithium-containing ionic liquid. Also disclosed are a method of preparing the above-described gel electrolyte composite and an electrochemical energy storage device containing same.

D'Angelo, Anthony J.↗
DOE OSTI2025

Interlayer Exciton Polarons in Mesoscopic V 2 O 5 for Broadband Optoelectronic Synapses

Persistent photoconductivity and optoelectronic synaptic behavior are demonstrated in solution-processed mesoscopic α-phase vanadium pentoxide (V 2 O 5 ) thin films. First-principles simulations coupled with the two-site Holstein polaron hopping model show that vacancies at the terminal oxygen position lead to long recombination times because photoexcited electrons and holes reside on different layers separated by the van der Waals gap, forming a weakly coupled interlayer exciton polaron. Mid-gap polaronic states also significantly broaden the photoresponse of the films to span across visible and infrared wavelengths. By controlling the amplitude/intensity, duration, and/or number of optical pulses, tunable optoelectronic memory functions, such as short-term and long-term plasticity, are experimentally established in V 2 O 5 -based optoelectronic synapses. Furthermore, device fabrication was extended to mechanically flexible ultrathin glass substrates. Flexible optoelectronic synapses maintained high performance after 150 bending cycles.

Phan, Thanh Luan [National Renewable Energy Labora↗