Vacuum heat treatment of CdS single crystals.
Spectral distribution of photoconductance and conductance glow curves of CdS single crystals after vacuum heat treatment
HEAT TREATMENT↗
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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Light-sensitive potentiometer measures product of two variables
The output voltage from a photoconductive potentiometer circuit using a galvanometer mirror reflecting the light beam is directly proportional to the product of the input voltage.
Haertsch, O. C.↗
Infrared lines of the solar corona. I - Prediction.
Detectability of coronal IR lines due to Mg, Al and Si ions with practicable IR spectrometers and photoconductive detectors, considering atmospheric attenuation
PHOTODETECTOR↗
Improved radiographic image amplifier panel
Layered image amplifier for radiographic /X ray and gamma ray/ applications, combines very high radiation sensitivity with fast image buildup and erasure capabilities by adding a layer of material that is both photoconductive and light-emitting to basic image amplifier and cascading this assembly with a modified Thorne panel.
Brown, R. L., Sr.↗
Dark conductivity of CdS as a function of S-vapor pressure during heat treatment between 500 deg and 700 deg C
Dark conductivity, photoconductivity, and luminescence of cadmium sulfide crystals heat treated in sulfur or cadmium vapors
Boer, K. W.↗
Guidance and control research
Effective work function of metal contacts to vacuum cleaved photoconducting cadmium sulfide, Curie point switching experiments, and germanium diodes for noise measurements
Source record↗
Effect of bias light on the spectral response of Cu sub 2 S-CdS cells.
Red, blue and no bias light effects on spectral response of copper sulfide-cadmium sulfide cell, using model incorporating photoconductive layer
Brandhorst, H. W., Jr.↗
Current oscillations in photoexcited gallium- arsenide.
Current oscillations in semiinsulating O and Cr doped GaAs samples at room temperature, noting photoconductivity excitation spectra
Viehmann, W.↗
Recombination lifetimes in high-purity silicon at low temperatures.
Transient recombination lifetimes in n-type float zone Si from 4.2 K to room temperature, obtaining electrical and photoconductivity values
Leadon, R.↗
Degradation of thin films of zinc oxide by ultraviolet radiation
Optical transmittance, Hall effect, and spectral photoconductivity measurements on thin films of zinc oxide in vacuum to determine degradation by ultraviolet radiation
Hayes, J. D.↗
Investigation of optical/infrared sensor techniques for application satellites Final report
Piezoelectric and photoconducting optical and infrared sensor array development for ATS satellites
Kaufman, I.↗
Investigation of the structure of radiation damage in lithium diffused silicon Midway progress report, 1 Jan. - 1 Jun. 1970
Instrumentation and methods for study of radiation damage in lithium diffused silicon using infrared photoconductivity and spectroscopy as probes
Corelli, J. C.↗
Electron beam pumped laser action in selenium and tellurium with applications for tunable backward parametric oscillations Final report
Growth of selenium and selenium-tellurium alloy crystals with determination of optical absorption and photoconductivity
Source record↗
Isotope effect for electron mobility in anthracene
Transient photoconductivity measurements of room temperature electron mobility in deuterated anthracene single crystals, discussing isotope effect
Hermann, A. M.↗
An optical quality meter suitable for cryogenic liquids
Construction of instrument to measure ratio of liquid to gas of flowing transparent cryogenic fluid is described. Instrument consists of collimated light source and photoconductive cell. Operation of instrument is described and illustration of equipment is provided.
Hobart, H. F.↗
High field CdS detector for infrared radiation
New and highly sensitive method of detecting infrared irradiation makes possible solid state infrared detector which is more sensitive near room temperature than usual photoconductive low band gap semiconductor devices. Reconfiguration of high field domains in cadmium sulphide crystals provides basis for discovery.
Tyagi, R. C.↗
Silicon solar cells as a high-solar-intensity radiometer
The characteristics of a conventional, 1- by 2-cm, N/P, gridded silicon solar cell when used as a radiometer have been determined for solar intensity levels to 2800 mW/sq cm (20 solar constants). The short-circuit current was proportional to the radiant intensity for levels only to 700 mW/sq cm (5 solar constants). For intensity levels greater than 700 mW/sq cm, it was necessary to operate the cell in a photoconductive mode in order to obtain a linear relation between the measured current and the radiant intensity. When the solar cell was biased with a reverse voltage of -1 V, the measured current and radiant intensity were linearly related over the complete intensity range from 100 to 2800 mW/sq cm.
Spisz, E. W.↗
A space simulation test chamber development for the investigation of radiometric properties of materials
The design, fabrication, and preliminary utilization of a thermal vacuum space simulation facility are discussed. The facility was required to perform studies on the thermal radiation properties of materials. A test chamber was designed to provide high pumping speed, low pressure, a low photon level radiation background (via high emissivity, coated, finned cryopanels), internal heat sources for rapid warmup, and rotary and linear motion of the irradiated materials specimen. The radiation detection system consists of two wideband infrared photoconductive detectors, their cryogenic coolers, a cryogenic-cooled blackbody source, and a cryogenic-cooled optical radiation modulator.
Enlow, D. L.↗