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At least 91 records · Page 5

Radiation damage and defect behavior in proton irradiated lithium-counterdoped n+p silicon solar cells

Two lithium-counterdoped n+p silicon solar cells with different lithium concentrations were irradiated by 10-MeV protons. Cell performance was measured as a function of fluence, and it was found that the cell with the highest concentration of lithium had the highest radiation resistance. Deep level transient spectroscopy which showed two deep level defects that were lithium related. Relating the defect energy levels obtained from this study with those from earlier work using 1-MeV electron irradiation shows no correlation of the defect energy levels. There is one marked similarity: the absence of the boron-interstitial-oxygen-interstitial defect. This consistency strengthens the belief that lithium interacts with oxygen to prevent the formation of the boron interstitial-oxygen interstitial defect. The results indicate that, in general, addition of lithium in small amounts to the p-base of a boron doped silicon solar cell such that the base remains p-type, tends to increase the radiation resistance of the cell.

Stupica, John↗

Trapping of noble gases in proton-irradiated silicate smokes

We have measured Ne, Ar, Kr, and Xe in Si2O3 'smokes' that were condensed on Al substrates, vapor-deposited with various mixtures of CH4, NH3, H2O3 and noble gases at 10 K and subsequently irradiated with 1 MeV protons to simulate conditions during grain mantle formation in interstellar clouds. Neither Ne nor Ar is retained by the samples upon warming to room temperature, but Xe is very efficiently trapped and retained. Kr is somewhat less effectively retained, typically depleted by factors of about 10-20 relative to Xe. Isotopic fractionation favoring the heavy isotopes of Xe and Kr of about 5-10-percent/amu is observed. Correlations between the specific chemistry of the vapor deposition and heavy noble gas retention are most likely the result of competition by the various species for irradiation-produced trapping sites. The concentration of Xe retained by some of these smokes exceeds that observed in phase Q of meteorites and, like phase Q, they do not seem to be carriers of the light noble gases.

Nichols, R. H., Jr.↗

Effects of proton irradiation on the performance of InP/GaAs solar cells

InP solar cells are known to be more radiation resistant than either GaAs or Si. In addition, AMO total area efficiencies approaching 19 percent were attained for InP. However, the present high substrate cost presents a barrier to the eventual widespread use of InP cells in space. In addition, if cell thinning becomes desirable, their relative fragility presents a problem. For these reasons, the NASA Lewis Research Center has initiated a program, aimed at producing thin InP cells, by heteroepitaxial deposition of InP on cheaper, more durable substrates. To date, a short term feasibility study as Spire has resulted in cells processed from InP heteroepitaxially deposited on Si substrates with an intervening thin GaAs layer (InP/GaAs/Si) and cells produced from InP deposited on GaAs (InP/GaAs). As a result of this short study efficiencies of over 7 and 9 percent were achieved for InP/GaAs/Si and InP/GaAs respectively. Although these efficiencies are low, they represent a modest and encouraging starting point for a more intensive program. Obviously, when considering economy and mechanical strength, cells processed on silicon substrates are preferred. However, although the InP/GaAs cells are not the final desirable products of this program, their properties serve to highlight several roadblocks to be overcome in producing cells with the more desirable cost and strength properties. Hence, in the present case, the properties of the InP/GaAs cells before and after irradiation by 10 MeV protons are examined. A similar study of InP/GaAs/Si cells will be reported on at a later date.

Weinberg, Irving↗

Deep-level defects and recombination parameters in proton irradiated AlGaAs-GaAs solar cells

The deep-level defects produced in high efficiency AlGaAs-GaAs solar cells by proton energies of 50, 100, 200, and 290 keV are investigated. Proton fluences were from 10 to the 10th to 10 to the 13th p/sq cm. The results show that the diode ideality factor varies between 1.9 and 2.1, indicating that the dominant current component is due to the recombination of electron-hole pairs via deep-level traps in the junction space charge region of these diodes. The recombination current increases with increasing proton fluence and proton energy. The reduction of open circuit voltage, short circuit current, and conversion efficiency in the irradiated cells relates directly to the density of the deep-level defects induced by proton irradiation.

Li, S. S.↗

Raman Microscopic Characterization of Proton-Irradiated Polycrystalline Diamond Films

The microstructural effects of irradiating polycrystalline diamond films with proton dosages ranging from 10(exp 15) to 10(exp 17) H(+) per square centimeter was examined. Scanning Electron Microscopy and Raman microscopy were used to examine the changes in the diamond crystalline lattice as a function of depth. Results indicate that the diamond lattice is retained, even at maximum irradiation levels.

Newton, R. L.↗

Production of organic molecules in the outer solar system by proton irradiation - Laboratory simulations

Preliminary experiments to investigate the formation of colored polymers and other interesting molecules by the irradiation of gas mixtures with protons are discussed. As in previous experiments, colored polymers were produced. An important feature of the present work is the presence or absence of absorption at 5 microns in the different materials produced; Titan is quite dark at this wavelength and Io is fairly bright. Such features may provide criteria for accepting or rejecting various materials produced in these experiments as reasonable coloring agents for the outer solar system.

Scattergood, T.↗

A Comparison of Model Calculation and Measurement of Absorbed Dose for Proton Irradiation

With the increase in the amount of time spent EVA that is necessary to complete the construction and subsequent maintenance of ISS, it will become increasingly important for ground support personnel to accurately characterize the radiation exposures incurred by EVA crewmembers. Since exposure measurements cannot be taken within the organs of interest, it is necessary to estimate these exposures by calculation. To validate the methods and tools used to develop these estimates, it is necessary to model experiments performed in a controlled environment. This work is such an effort. A human phantom was outfitted with detector equipment and then placed in American EMU and Orlan-M EVA space suits. The suited phantom was irradiated at the LLUPTF with proton beams of known energies. Absorbed dose measurements were made by the spaceflight operational dosimetrist from JSC at multiple sites in the skin, eye, brain, stomach, and small intestine locations in the phantom. These exposures are then modeled using the BRYNTRN radiation transport code developed at the NASA Langley Research Center, and the CAM (computerized anatomical male) human geometry model of Billings and Yucker. Comparisons of absorbed dose calculations with measurements show excellent agreement. This suggests that there is reason to be confident in the ability of both the transport code and the human body model to estimate proton exposure in ground-based laboratory experiments.

Zapp, N.↗

Spatial resolution and nature of defects produced by low-energy proton irradiation of GaAs solar cells

AlGaAs/GaAs solar cells with about 0.5-micron-thick Al(0.85)Ga(0.15)As window layers were irradiated using isotropic and normal incidence protons having energies between 50 and 500 keV with fluences up to 1 x 10 to the 12th protons/sq cm. Although the projected range for these protons varies from 0 to more than 4.5 microns, the recombination losses due to the irradiation-induced defects were observed to be maximum in the vicinity of the AlGaAs/GaAs interface and the space-charge region irrespective of the proton energy. This was found by analyzing spectral response measurements. The results are explained by using a model in which the interaction of as-grown dislocations with irradiation-induced point defects is considered.

Kachare, R.↗

Proton irradiation on materials

A computer code is developed by utilizing a radiation transport code developed at NASA Langley Research Center to study the proton radiation effects on materials which have potential application in NASA's future space missions. The code covers the proton energy from 0.01 Mev to 100 Gev and is sufficient for energetic protons encountered in both low earth and geosynchronous orbits. With some modification, the code can be extended for particles heavier than proton as the radiation source. The code is capable of calculating the range, stopping power, exit energy, energy deposition coefficients, dose, and cumulative dose along the path of the proton in a target material. The target material can be any combination of the elements with atomic number ranging from 1 to 92, or any compound with known chemical composition. The generated cross section for a material is stored and is reused in future to save computer time. This information can be utilized to calculate the proton dose a material would receive in an orbit when the radiation environment is known. It can also be used to determine, in the laboratory, the parameters such as beam current of proton and irradiation time to attain the desired dosage for accelerated ground testing of any material. It is hoped that the present work be extended to include polymeric and composite materials which are prime candidates for use as coating, electronic components, and structure building. It is also desirable to determine, for ground testing these materials, the laboratory parameters in order to simulate the dose they would receive in space environments. A sample print-out for water subject to 1.5 Mev proton is included as a reference.

Chang, C. Ken↗

Acute effects of whole-body proton irradiation on the immune system of the mouse

The acute effects of proton whole-body irradiation on the distribution and function of leukocyte populations in the spleen and blood were examined and compared to the effects of photons derived from a (60)Co gamma-ray source. Adult female C57BL/6 mice were exposed to a single dose (3 Gy at 0.4 Gy/min) of protons at spread-out Bragg peak (SOBP), protons at the distal entry (E) region, or gamma rays and killed humanely at six different times thereafter. Specific differences were noted in the results, thereby suggesting that the kinetics of the response may be variable. However, the lack of significant differences in most assays at most times suggests that the RBE for both entry and peak regions of the Bragg curve was essentially 1.0 under the conditions of this study. The greatest immunodepression was observed at 4 days postexposure. Flow cytometry and mitogenic stimulation analyses of the spleen and peripheral blood demonstrated that lymphocyte populations differ in radiosensitivity, with B (CD19(+)) cells being most sensitive, T (CD3(+)) cells being moderately sensitive, and natural killer (NK1.1(+)) cells being most resistant. B lymphocytes showed the most rapid recovery. Comparison of the T-lymphocyte subsets showed that CD4(+) T helper/inducer cells were more radiosensitive than the CD8(+) T cytotoxic/suppressor cells. These findings should have an impact on future studies designed to maximize protection of normal tissue during and after proton-radiation exposure.

NASA Discipline Radiation Health↗

A model for proton-irradiated GaAs solar cells

A simple model for proton radiation damage in GaAs heteroface solar cells is developed. The model includes the effects of spatial nonuniformity of low energy proton damage. Agreement between the model and experimental proton damage data for GaAs heteroface solar cells is satisfactory. An extension of the model to include angular isotropy, as is appropriate for protons in space, is shown to result in significantly less cell damage than for normal proton incidence.

Wilson, J. W.↗

Annealing results on low-energy proton-irradiated GaAs solar cells

AlGaAs/GaAs solar cells with an approximately 0.5-micron-thick Al(0.85)Ga(0.15)As window layer were irradiated using normal and isotropic incident protons having energies between 50 and 500 keV with fluence up to 1 x 10 to the 12th protons/sq cm. The irradiated cells were annealed at temperatures between 150 and 300 C in nitrogen ambient. The annealing results reveal that significant recovery in spectral response at longer wavelengths occurred. However, the short-wavelength spectral response showed negligible annealing, irrespective of the irradiation energy and annealing conditions. This indicates that the damage produced near the AlGaAs/GaAs interface and the space-charge region anneals differently than damage produced in the bulk. This is explained by using a model in which the as-grown dislocations interact with irradiation-induced point defects to produce thermally stable defects.

Kachare, R.↗

Isotopic anomalies and proton irradiation in the early solar system

Nuclear cross sections relevant to the various isotopic-abundance anomalies found in solar-system objects are evaluated in an attempt to set constraints on the hypothesized mechanism of irradiation of forming planetesimals by energetic protons from the young sun. A power-law proton spectrum is adopted, attention is restricted to proton energies less than about 20 MeV, and average cross sections are calculated for several reactions that might be expected to lead to the observed anomalies. The following specific anomalies are examined in detail: Al-26, Na-22, Xe-126, I-129, Kr-80, V-50, Nb-92, La-138, Ta-180, Hg-196, K-40, Ar-36, O-17, O-18, N-15, C-13, Li, Be, and B. It is suggested that the picture of presolar-grain carriers accounts for the facts more naturally than do irradiation models.

Clayton, D. D.↗

Proton irradiation of conventional and lithium solar cells - 11-37 MeV

Conventional n/p and lithium solar cells were irradiated with 11- to 37-MeV protons. The energy dependence of the solar cell degradation, calculated from electrical parameters and lifetime measurements, is shown to be very slight. Damage coefficients for the n/p cells are calculated. Annealing characteristics of both the lithium cells and the n/p cells are presented.

Anspaugh, B. E.↗

Effect of front and rear incident proton irradiation on silicon solar cells

Four solar cell types of current manufacture were irradiated through the front and rear surfaces with protons in the energy range between 1 and 10 MeV. The solar cell parameters varied for this study were cell thickness and back surface field (BSF) vs. no BSF. Some cells were irradiated at normal incidence and an equal number were irradiated with simulated isotropic fluences. The solar cell electrical characteristics were measured under simulated AM0 illumination after each fluence. Using the normal incidence data, proton damage coefficients were computed for all four types of cells for both normal and omnidirectional radiation fields. These were found to compare well with the omnidirectional damage coefficients derived directly from the rear-incidence radiation data. Similarly, the rear-incidence omnidirectional radiation data were used to compute appropriate damage coefficients. A method for calculating the effect of a spectrum of energies is derived from these calculations. It is suitable for calculating the degradation of cells in space when they have minimal rear-surface shielding.

Anspaugh, Bruce↗

Proton and deuteron double differential cross sections at angles from 10 deg to 60 deg from Be, C, Al, Fe, Cu, Ge, W, and Pb under 558-MeV-proton irradiation

The double differential cross sections for the production of protons and deuterons from targets of Be, C, Al, Fe, Cu, Ge, W, and Pb were obtained at laboratory angles of scatter of 10, 20, 30, 40, 50, and 60 degrees for 558-MeV incident protons. The position of the quasi-elastic peak, discernible in the cross sections up to approximately 40 degrees, corresponded closely to the theoretical predictions for proton-proton elastic scattering at 558 MeV. The mean ratio of deuteron to proton energy-integrated cross sections was 0.056 + or - 0.008. The dependence of energy-integrated cross sections for both protons and deuterons on target mass number A varied from A to the 1/3 power at 10 degrees to A to the 2/3 power above approximately 30 degrees. The ratio of energy-integrated deuteron cross sections for quasielastic processes to that for reactions yielding a deuteron-pi-meson pair was approximately 10 percent.

Beck, S. M.↗

Io's surface composition based on reflectance spectra of sulfur/salt mixtures and proton-irradiation experiments

Available full-disk reflectance spectra of Io in the range 0.3 to 2.5 microns have been used to determine a surface compositional model for Io that is consistent with Io's other known chemical and physical properties. Results indicate that the surface of Io contains abundant dehydrated salts of high Na, Mg, and Fe(3+) content such as bloedite and ferrous iron sulfate. Experiments were performed studying the irradiation damage effects from low-energy proton bombardment, since Io is immersed in Jupiter's magnetosphere.

Nash, D. B.↗