SEARCH · Search NASA
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
This paper gives the status of theoretical and experimental efforts at JPL in the development of environmentally robust (radiation hard and radiation tolerant), ultra-low power, high performance CMOS active pixel sensor (APS) imagers for star tracker/imager applications.
This paper investigates the suitability of the equation for accurately defining solar cell parameter degradation as a function of hard particle radiation. Y = Y/sub o/ + C/sub 1/ * Log(1 + /spl phi///spl phi//sub x/) + C/sub 2/ * Log(1 + /spl phi///spl phi//sub y/) The paper also provides methods for determining the constants in the equation and compares results from this equation to those obtained by the more traditionally used. Y = /spl Sigma/(a/sub i/ * [In(/spl phi/)]/sup i/)
We present an overview of the Systems Engineering and Assurance Modeling (SEAM) platform, a web-browser-based tool which is designed to help engineers evaluate the radiation vulnerabilities and develop an assurance approach for electronic parts in space systems. The SEAM framework consists of three interconnected modeling tools, a SysML compatible system description tool, a Goal Structuring Notation (GSN) visual argument tool, and Bayesian Net and Fault Tree extraction and export tools. The SysML and GSN sections also have a coverage check application that ensures that every radiation fault identified on the SysML side is also addressed in the assurance case in GSN. The SEAM platform works on space systems of any degree of radiation hardness but is especially helpful for assessing radiation performance in systems with commercial-off-the-shelf (COTS) electronic components.
A miniature L-band transceiver that operates at a carrier frequency of 1.25 GHz has been developed as part of a generic radar electronics module (REM) that would constitute one unit in an array of many identical units in a very-large-aperture phased-array antenna. NASA and the Department of Defense are considering the deployment of such antennas in outer space; the underlying principles of operation, and some of those of design, also are applicable on Earth. The large dimensions of the antennas make it advantageous to distribute radio-frequency electronic circuitry into elements of the arrays. The design of the REM is intended to implement the distribution. The design also reflects a requirement to minimize the size and weight of the circuitry in order to minimize the weight of any such antenna. Other requirements include making the transceiver robust and radiation-hard and minimizing power demand. Figure 1 depicts the functional blocks of the REM, including the L-band transceiver. The key functions of the REM include signal generation, frequency translation, amplification, detection, handling of data, and radar control and timing. An arbitrary-waveform generator that includes logic circuitry and a digital-to-analog converter (DAC) generates a linear-frequency-modulation chirp waveform. A frequency synthesizer produces local-oscillator signals used for frequency conversion and clock signals for the arbitrary-waveform generator, for a digitizer [that is, an analog-to-digital converter (ADC)], and for a control and timing unit. Digital functions include command, timing, telemetry, filtering, and high-rate framing and serialization of data for a high-speed scientific-data interface. The aforementioned digital implementation of filtering is a key feature of the REM architecture. Digital filters, in contradistinction to analog ones, provide consistent and temperature-independent performance, which is particularly important when REMs are distributed throughout a large array. Digital filtering also enables selection among multiple filter parameters as required for different radar operating modes. After digital filtering, data are decimated appropriately in order to minimize the data rate out of an antenna panel. The L-band transceiver (see Figure 2) includes a radio-frequency (RF)-to-baseband down-converter chain and an intermediate- frequency (IF)-to-RF up-converter chain. Transmit/receive (T/R) switches enable the use of a single feed to the antenna for both transmission and reception. The T/R switches also afford a built-in test capability by enabling injection of a calibration signal into the receiver chain. In order of decreasing priority, components of the transceiver were selected according to requirements of radiation hardness, then compactness, then low power. All of the RF components are radiation-hard. The noise figure (NF) was optimized to the extent that (1) a low-noise amplifier (LNA) (characterized by NF < 2 dB) was selected but (2) the receiver front-end T/R switches were selected for a high degree of isolation and acceptably low loss, regardless of the requirement to minimize noise.
The present conference on the effects of nuclear and space radiation on electronic hardware gives attention to topics in the basic mechanisms of radiation effects, dosimetry and energy-dependent effects, electronic device radiation hardness assurance, SOI/SOS radiation effects, spacecraft charging and space radiation, IC radiation effects and hardening, single-event upset (SEU) phenomena and hardening, and EMP/SGEMP/IEMP phenomena. Specific treatments encompass the generation of interface states by ionizing radiation in very thin MOS oxides, the microdosimetry of meson energy deposited on 1-micron sites in Si, total dose radiation and engineering studies, plasma interactions with biased concentrator solar cells, the transient imprint memory effect in MOS memories, mechanisms leading to SEU, and the vaporization and breakdown of thin columns of water.
Vacuum Microelectronic devices can be described as vacuum transistors or micro-miniature vacuum tubes, as one chooses. The fundamental reason behind this new technology is the very large current densities available from field emitters, namely as high as 10(8) A/sq cm. Array current densities as high as 1000 A/sq cm have been measured. Total electron transit times from source to drain for 1 micron feature size devices have been predicted to be about 150fs. This very short transit time implies the possibility of submillimeter wave transmitters and rectennas in devices which can operate with reasonably high voltages and which are small in size and are lightweight. In addition, they are expected to be extremely radiation hard and very temperature insensitive. That is, they are expected to have radiation hardness characteristics similar to vacuum tubes, and both the high temperature and low temperature limits should be determined by the package. That is, there should be no practical intrinsic temperature or carrier freezeout problems for devices based on metals or composites. But the technology is difficult to implement at the present time because it is based on 300 to 500 angstrom radius field emitters which must be relatively uniform. There is also the need to understand the non-equilibrium transport physics in the near-surface regions of the field emitters.
Single photon avalanche diodes (SPADs) have been recently studied as photodetectors for applications in space missions. In this presentation we report the results of radiation hardness test on large area SPAD (actual results refer to SPADs having 500 micron diameter). Dark counts rate as low as few kHz at −10 degC has been obtained for the 500 micron devices, before irradiation. We performed bulk damage and total dose radiation tests with protons and gamma-rays in order to evaluate their radiation hardness properties and their suitability for application in a Low Earth Orbit (LEO) space mission. With this aim SPAD devices have been irradiated using up to 20 krad total dose with gamma-rays and 5 krad with protons. The test performed show that large area SPADs are very sensitive to proton doses as low as 2×10(exp 8) (1 MeV eq) n/cm2 with a significant increase in dark counts rate (DCR) as well as in the manifestation of the "random telegraph signal" effect. Annealing studies at room temperature (RT) and at 80 degC have been carried out, showing a high decrease of DCR after 24-48 h at RT. Lower protons doses in the range 1-10×10(exp 7) (1 MeV eq) n/cm(exp 2) result in a lower increase of DCR suggesting that the large-area SPADs tested in this study are well suitable for application in low-inclination LEO, particularly useful for gamma-ray astrophysics.
NASA requirements for computing and memory for microspacecraft emphasize high density, low power, small size, and radiation hardness. The distributed nature of storage elements in nanocrystal floating-gate memories leads to intrinsic fault tolerance and radiation hardness. Conventional floating-gate non-volatile memories are more susceptible to radiation damage. Nanocrystal-based memories also offer the possibility of faster, lower power operation. In the pursuit of filling these requirements, the following tasks have been accomplished: (1) Si nanocrystal charging has been accomplished with conducting-tip AFM; (2) Both individual nanocrystals on an oxide surface and nanocrystals formed by implantation have been charged; (3) Discharging is consistent with tunneling through a field-lowered oxide barrier; (4) Modeling of the response of the AFM to trapped charge has allowed estimation of the quantity of trapped charge; and (5) Initial attempts to fabricate competitive nanocrystal non-volatile memories have been extremely successful.
The significant effect of junction depletion layer recombination on the efficiency of windowed GaAs cells was demonstrated. The effect becomes more pronounced as radiation damage occurs. The depletion is considered for 1 MeV electron fluences up to 10 to the 16th power e/sq m. The cell modeling separates damage in emitter and base or buffer layers using different damage coefficients is reported. The lower coefficient for the emitter predicts less loss of performance at fluences greater than 10 to the 15th power e/sq cm. A method for obtaining information on junction recombination effects as damage proceeds is described; this enables a more complete diagnosis of damage to be made.
NASA requirements for computing and memory for microspacecraft emphasizes high density, low power, small size, and radiation hardness. The distributed nature of a storage elements in nanocrystal floating-gate memories leads to instrinsic fault tolerance and radiation-hardness. Nanocrystal-based memories also offer the possibility of a faster, lower power operation.
The micromagnetic Hall effect random access memory (MHRAM) has the potential of replacing ROMs, EPROMs, EEPROMs, and SRAMs because of its ability to achieve non-volatility, radiation hardness, high density, and fast access times, simultaneously. Information is stored magnetically in small magnetic elements (micromagnets), allowing unlimited data retention time, unlimited numbers of rewrite cycles, and inherent radiation hardness and SEU immunity, making the MHRAM suitable for ground based as well as spaceflight applications. The MHRAM device design is not affected by areal property fluctuations in the micromagnet, so high operating margins and high yield can be achieved in large scale integrated circuit (IC) fabrication. The MHRAM has short access times (less than 100 nsec). Write access time is short because on-chip transistors are used to gate current quickly, and magnetization reversal in the micromagnet can occur in a matter of a few nanoseconds. Read access time is short because the high electron mobility sensor (InAs or InSb) produces a large signal voltage in response to the fringing magnetic field from the micromagnet. High storage density is achieved since a unit cell consists only of two transistors and one micromagnet Hall effect element. By comparison, a DRAM unit cell has one transistor and one capacitor, and a SRAM unit cell has six transistors.
Four Free-Flying Magnetometers (FFMs), developed at the Jet Propulsion Laboratory (JPL) for the Enstrophy mission, were successfully deployed from the payload of a sounding rocket launched from Poker Flats, Alaska on February 11, 1999. The FFMs functioned successfully by synchronously measuring the vector magnetic field at 4 points separate from the payload and at relative distances up to 3 km, and communicated their data, in bursts, to the ground. This is the first time synchronized in-situ multipoint measurements of the Earth's magnetic field utilizing miniature spin-stabilized "sensorcraft" have been performed. The data they provided have enabled, for the first time, the direct measure of field-aligned current density and are enabling new science by determining the fine-scale structure of the currents in the Earth's ionosphere involved in the production of aurora. These proof-of-concept "hockey puck" (80 mm diameter, 38 mm height, 250 gram mass) FFMs were built using off-the-shelf commercial, industrial, and military grade surface-mount electronic components. Radiation-hard electronics was not required for the Enstrophy mission's short sub-orbital flight. The successful design, implementation, and flight demonstration of this 1st generation FFM design has provided a solid base for further development of a 2nd generation FFM design for planetary science applications. A reliable ultra-miniature radiation-hard 2nd-generation FFM utilizing System-On-A-Chip (SOAC) technologies is proposed. This design would be targeted for long-term planetary missions to investigate magnetospheric field configurations in regions having small-scale structure and to separate spatial and temporal variations. A fleet of short-lived (expendable) FFMs would be deployed into a targeted region to gather multiprobe vector magnetic field data. The FFMs would be ejected from a parent spacecraft at a speed of a few m/sec and would cover spatial volumes of order tens of kilometers for times of order one hour. The parent spacecraft would carry a sufficient number of FFMs for multiple deployments. Additional information is contained in the original extended abstract.
The use of Plastic Encapsulated Microcircuits (PEMs) is permitted on NASA Goddard Space Flight Center (GSFC) spaceflight applications, provided each use is thoroughly evaluated for thermal, mechanical, and radiation implications of the specific application and found to meet mission requirements. PEMs shall be selected for their functional advantage and availability, not for cost saving; the steps necessary to ensure reliability usually negate any initial apparent cost advantage. A PEM shall not be substituted for a form, fit and functional equivalent, high reliability, hermetic device in spaceflight applications. Due to the rapid change in wafer-level designs typical of commercial parts and the unknown traceability between packaging lots and wafer lots, lot specific testing is required for PEMs, unless specifically excepted by the Mission Assurance Requirements (MAR) for the project. Lot specific qualification, screening, radiation hardness assurance analysis and/or testing, shall be consistent with the required reliability level as defined in the MAR. Developers proposing to use PEMs shall address the following items in their Performance Assurance Implementation Plan: source selection (manufacturers and distributors), storage conditions for all stages of use, packing, shipping and handling, electrostatic discharge (ESD), screening and qualification testing, derating, radiation hardness assurance, test house selection and control, data collection and retention.
We investigated the effects of 1 MeV electron irradiation on metamorphic ~1.7 eV GaAsP solar cells on GaP and on GaP/Si. Effects of junction polarity, base thickness, and threading dislocation density on radiation hardness were investigated using the AM0 solar simulator at NASA Glenn Research Center. Degradation of solar cell efficiency after irradiation was dominated by reduced minority carrier diffusion length in the base, leading to loss of long-wavelength carrier collection. Designs with higher base diffusion length or thinner base were favored, and accordingly, devices with n+/p junction polarity were more radiation-hard than those with p+/n junction polarity.
There are many applications that require long wavelength, large, uniform, reproducible, low cost, stable, and radiation-hard infrared (IR) focal plane arrays (FPAs). For example, the absorption lines of many gas molecules, such as ozone, water, carbon monoxide, carbon dioxide, and nitrous oxide occur in the wavelength region from 3 to 18 micron. Thus, IR imaging systems that operate in the long wavelength IR (LWIR) region (6 - 18 micron) are required in many space borne applications such as monitoring the global atmospheric temperature profiles, relative humidity profiles, cloud characteristics, and the distribution of minor constituents in the atmosphere which are being planned for future NASA Earth and planetary remote sensing systems. Due to higher radiation hardness, lower 1/f noise, and larger array size the GaAs based Quantum Well Infrared Photodetector (QWIP) FPAs are very attractive for such space borne applications compared to intrinsic narrow band gap detector arrays. In this presentation we will discuss the optimization of the detector design, material growth and processing that has culminated in realization of large format long-wavelength QWIP FPAs, portable and miniature LWIR cameras, holding forth great promise for myriad applications in 6-18 micron wavelength range in science, medicine, defense and industry. In addition, we will present some system demonstrations using broadband, two-color, and high quantum efficiency long-wavelength QWIP FPAs.
This book of knowledge (BoK) provides a critical review of the benefits and difficulties associated with using proton irradiation as a means of exploring the radiation hardness of commercial-off-the-shelf (COTS) systems. This work was developed for the NASA Electronic Parts and Packaging (NEPP) Board Level Testing for the COTS task. The fundamental findings of this BoK are the following. The board-level test method can reduce the worst case estimate for a board's single-event effect (SEE) sensitivity compared to the case of no test data, but only by a factor of ten. The estimated worst case rate of failure for untested boards is about 0.1 SEE/board-day. By employing the use of protons with energies near or above 200 MeV, this rate can be safely reduced to 0.01 SEE/board-day, with only those SEEs with deep charge collection mechanisms rising this high. For general SEEs, such as static random-access memory (SRAM) upsets, single-event transients (SETs), single-event gate ruptures (SEGRs), and similar cases where the relevant charge collection depth is less than 10 μm, the worst case rate for SEE is below 0.001 SEE/board-day. Note that these bounds assume that no SEEs are observed during testing. When SEEs are observed during testing, the board-level test method can establish a reliable event rate in some orbits, though all established rates will be at or above 0.001 SEE/board-day. The board-level test approach we explore has picked up support as a radiation hardness assurance technique over the last twenty years. The approach originally was used to provide a very limited verification of the suitability of low cost assemblies to be used in the very benign environment of the International Space Station (ISS), in limited reliability applications. Recently the method has been gaining popularity as a way to establish a minimum level of SEE performance of systems that require somewhat higher reliability performance than previous applications. This sort of application of the method suggests a critical analysis of the method is in order. This is also of current consideration because the primary facility used for this type of work, the Indiana University Cyclotron Facility (IUCF) (also known as the Integrated Science and Technology (ISAT) hall), has closed permanently, and the future selection of alternate test facilities is critically important. This document reviews the main theoretical work on proton testing of assemblies over the last twenty years. It augments this with review of reported data generated from the method and other data that applies to the limitations of the proton board-level test approach. When protons are incident on a system for test they can produce spallation reactions. From these reactions, secondary particles with linear energy transfers (LETs) significantly higher than the incident protons can be produced. These secondary particles, together with the protons, can simulate a subset of the space environment for particles capable of inducing single event effects (SEEs). The proton board-level test approach has been used to bound SEE rates, establishing a maximum possible SEE rate that a test article may exhibit in space. This bound is not particularly useful in many cases because the bound is quite loose. We discuss the established limit that the proton board-level test approach leaves us with. The remaining possible SEE rates may be as high as one per ten years for most devices. The situation is actually more problematic for many SEE types with deep charge collection. In cases with these SEEs, the limits set by the proton board-level test can be on the order of one per 100 days. Because of the limited nature of the bounds established by proton testing alone, it is possible that tested devices will have actual SEE sensitivity that is very low (e.g., fewer than one event in 1 × 10(exp 4) years), but the test method will only be able to establish the limits indicated above. This BoK further examines other benefits of proton board-level testing besides hardness assurance. The primary alternate use is the injection of errors. Error injection, or fault injection, is something that is often done in a simulation environment. But the proton beam has the benefit of injecting the majority of actual SEEs without risk of something being missed, and without the risk of simulation artifacts misleading the SEE investigation.
We describe the first in situ search for Jovian X radiation with a dedicated X ray instrument. Upper limits to Jupiter's X ray power in the 27 - 48 keV range are presented using data taken by the gamma ray burst experiment on the experiment on the inbound Ulysses trajectory, at distances between 163 and 110 R(sub J). The data were analyzed using three methods for detection of (1) a steady flux, (2) a flux linked to System III rotation, and (3) a sporadic flux. The 3 sigma upper limits lie between 1.1 x 10(exp 8) and 5.6 x 10(exp 8) W. The results are consistent with the idea that the bulk of the Jovian UV auroral emissions are due to energetic electrons, while the previously observed low-energy X radiation is due to ion precipitation.
Presents a methodology for modeling radiation hardness assurance activities into MBSE throughout the NASA project life cycle. Also includes information about quantitatively and qualitatively modeling radiation-induced failures with system models.