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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS1973

Dissociative recombination of CH+ ions.

In recent studies of the formation of molecules in interstellar clouds, Solomon and Klemperer (1972) and Frisch (1972) were able to fit the observed ratios of CH+ and CH densities only with the assumption that the rate of dissociative recombination is extremely small. It is known that the rate for most diatomic molecules is relatively large, with the exception of H2+ and He2+ for which it is anomalously small. The present work explores the possibility that CH+ also has a low recombination rate. However, preliminary calculations yield a large rate of the dissociative recombination process, seemingly necessitating considerable revision of some recent models of interstellar clouds.

Bardsley, J. N.↗
NASA NTRS1976

Observations of heavy-element recombination lines in the Rho Ophiuchi dark cloud at 13 centimeters wavelength

High-sensitivity observations at the carbon 140-alpha and 141-alpha recombination-line frequencies in the direction of the Rho Oph dust cloud show the presence of recombination lines of carbon and sulfur, but not of other heavy elements. These results require that the elements Si, Fe, and Mg are depleted by factors greater than 15, 10, and 2, respectively, most likely into interstellar grains, whereas sulfur is undepleted. They also require that only approximately one-sixth of the carbon is present in the gas phase in the cloud. From the observed size of the C II region together with the observed carbon depletion, it is inferred that the density in the carbon-line-emitting region is 25,000 per cu cm and that the size of the S II region is significantly larger than that of the C II region. The agreement between the widths of the recombination lines (which arise in a small region of the cloud) and those of the more widely distributed molecular species suggests that the lines in this cloud are broadened by microturbulence on a scale of much less than 0.1 pc.

Knapp, G. R.↗
NASA NTRS1976

Determination of surface recombination velocity in heavily doped silicon

A method was developed and successfully tested for the determination of the effective surface recombination velocity of silicon layers doped by diffusion of phosphorus to a level of 10 to the 19th to 10 to the 21st per cu cm. The effective recombination velocity was obtained from the dependence of the electron-beam-induced current on the penetration of the electron beam of a scanning electron microscope. A special silicon diode was constructed which permitted the collection at the p-n junction of the carriers excited by the electron beam. This diode also permitted the study of the effects of surface preparation on the effective surface recombination velocity.

Watanabe, M.↗
NASA NTRS1977

Recombination lasing in a magnetoplasmadynamic arcjet

The plasmadynamic recombination laser concept is verified experimentally in a high power quasi-steady MPD arcjet operating at 4 kA and 12 g/sec of argon. Measurements of the spatial variation of electron temperature, electron density, and population densities in the arc exhaust flow confirm that inverted populations of the 4p to 4s Ar II transitions are established by collisional-radiative recombination of the Ar III ion. Using an optical cavity aligned transversely to the flow, recombination lasing of four such transitions, 5145, 4880, 4764 and 4727 A, is observed spectro-photographically and photoelectrically over the entire 1-msec discharge.

Campbell, E. M.↗
NASA NTRS1977

Recombination lasing in a magnetoplasmadynamic arcjet

The plasmadynamic recombination laser concept is verified experimentally in a high-power quasisteady MPD arcjet operating at 4 kA and 12 g/sec of argon. Measurements of the spatial variation of electron temperature, electron density, and population densities in the arc exhaust flow confirm that inverted populations of the 4p to 4s ArII transitions are established by collisional-radiative recombination of the ArIII ion. Using an optical cavity aligned transversely to the flow, recombination lasing of four such transitions, 5145, 4880, 4764, and 4727 A, is observed spectrophotographically and photoelectrically over the entire 1-msec discharge.

Campbell, E. M.↗
NASA NTRS1977

Determination of minority-carrier lifetime and surface recombination velocity with high spacial resolution

Quantitative analysis of the electron beam induced current in conjunction with high-resolution scanning makes it possible to evaluate the minority-carrier lifetime three dimensionally in the bulk and the surface recombination velocity two dimensionally, with a high spacial resolution. The analysis is based on the concept of the effective excitation strength of the carriers which takes into consideration all possible recombination sources. Two-dimensional mapping of the surface recombination velocity of phosphorus-diffused silicon diodes is presented as well as a three-dimensional mapping of the changes in the minority-carrier lifetime in ion-implanted silicon.

Watanabe, M.↗
NASA NTRS1977

Determination of the N2 recombination rate coefficient in the ionosphere

Measurements of aeronomic parameters made by the Atmosphere Explorer-C satellite are used to determine the recombination rate coefficient of N2(+) in the ionosphere. The rate is found to increase significantly with decreasing electron density. Values obtained range from approximately 1.4 x 10 to the -7th to 3.8 x 10 to the -7th cu cm/sec. This variation is explained in a preliminary way in terms of an increase in the rate coefficient with vibrational excitation. Thus, high electron densities depopulate high vibrational levels reducing the effective recombination rate, whereas, low electron densities result in an enhancement in the population of high vibrational levels, thus, increasing the effective recombination rate.

Orsini, N.↗
NASA NTRS1979

Dielectronic recombination rates, ionization equilibrium, and radiative energy-loss rates for neon, magnesium, and sulfur ions in low-density plasmas

Results of detailed and systematic calculations are presented for the total dielectronic recombination rate coefficients for the ions of Ne, Mg, and S in a low-density predominantly hydrogen plasma. The new recombination rates are used to calculate solar corona ionization-equilibrium distributions of the ions. The most important effect of dielectronic recombination for ions in corona equilibrium is found to be a shift in the maximum-abundance temperatures toward higher temperatures, which are in some cases reduced from those predicted on the basis of the simple Burgess formula.

Jacobs, V. L.↗
NASA NTRS1980

Recombination lasing in a magnetoplasmadynamic arcjet

The plasmadynamic recombination laser concept is verified experimentally in a high-power quasisteady MPD arcjet operating at 4 kA and 12 g/sec of argon. Measurements of the spatial variation of electron temperature, electron density, and population densities in the arc exhaust flow confirm that inverted populations of the 4p to 4s Ar II transitions are established by collisional-radiative recombination of the Ar III ion. Using an optical cavity aligned transversely to the flow, recombination lasing of seven such transitions, 5145, 4880, 4764, 4727, 4658, 4579, and 4545 A, is observed spectrophotographically and photoelectrically over the entire 1-msec discharge.

Campbell, E. M.↗
NASA NTRS1981

Collisional radiative recombination in high-pressure noble gas mixtures

Rate coefficients are calculated for neutral-assisted collisional radiative recombination in dense, weakly ionized rare-gas mixtures using the quasiequilibrium model developed by Bates. It is shown that the recombination rate can be significantly altered by the presence of a buffer gas. In particular, the presence of helium can enhance the collisional radiative recombination rate coefficient of heavy rare gases by a factor of 5.

Whitten, B. L.↗
NASA NTRS1981

Electron-temperature dependence of dissociative recombination of electrons with N2/+/.N2 dimer ions

The variation with electron temperature of the dissociative recombination of electrons with N2(+).N2 dimer ions is investigated in light of the importance of such ions in the lower ionosphere and in laser plasmas. Dissociative recombination coefficients were determined by means of a microwave afterglow mass spectrometer technique for electron temperatures from 300-5600 K and an ion and neutral temperature of 300 K. The recombination coefficient is found to be proportional to the -0.41 power of the electron temperature in this range, similar to that observed for the CO(+).CO dimer ion and consistent with the expected energy dependence for a fast dissociative process.

Whitaker, M.↗
NASA NTRS1981

Measurement of surface recombination velocity for silicon solar cells using a scanning electron microscope with pulsed beam

The role of surface recombination velocity in the design and fabrication of silicon solar cells is discussed. A scanning electron microscope with pulsed electron beam was used to measure this parameter of silicon surfaces. It is shown that the surface recombination velocity, s, increases by an order of magnitude when an etched surface degrades, probably as a result of environmental reaction. A textured front-surface-field cell with a high-low junction near the surface shows the effect of minority carrier reflection and an apparent reduction of s, whereas a tandem-junction cell shows an increasing s value. Electric fields at junction interfaces in front-surface-field and tandem-junction cells acting as minority carrier reflectors or sinks tend to alter the value of effective surface recombination velocity for different beam penetration depths. A range of values of s was calculated for different surfaces.

Daud, T.↗
NASA NTRS1981

Recombination coefficients for iron ions

Radiative recombination coefficients for all Fe ions are calculated by use of the Milne relation of detailed balance. Analytic fits are made to the dielectronic recombination rates computed by Jacobs (1977) and the Burgess general formula (1965). Higher level rates are treated hydrogenically by a quantum defect method based on the energies of the levels. Recombination coefficients for Fe I to Fe 26 are listed.

Woods, D. T.↗
NASA NTRS1982

Development of improved hydrogen recombination in sealed nickel-cadmium aerospace cells

The identification and measurement of a hydrogen recombination mechanism in nickel-cadmium cells has made deep reconditioning on a battery basis safe and feasible. Deep reconditioning has been shown to improve performance and increase life of nickel-cadmium batteries in geosynchronous orbit applications. The hydrogen recombination mechanism and data supporting the mechanism are presented. Parameteric cell design experiments are described which have lead to the definition of nickel-cadmium cells capable of high rate overdischarge. Nickel-cadmium cells with optimum hydrogen recombination capability were successfully cycled for 7 seasons in simulation of the geosynchronous orbit regime at 75 percent depth-of-discharge with extensive midseason and end-of-season overdischarge at rates ranging from C/4 to C/20.

Ritterman, P. F.↗
NASA NTRS1983

Influence of radiative recombination on the minority-carrier transport in direct band-gap semiconductors

When a semiconductor sample is irradiated by means of an external source, emitting photons or electrons, excess carriers are produced which distribute themselves throughout the sample. One of the parameters which determine the distribution of the carriers is the surface recombination velocity. The present investigation is concerned with the recombination lifetime tau. The predominant mechanism for recombination in wide band-gap semiconductors is described by the Shockley-Read-Hall (SRH) theory. The transport equations are derived for free carriers and the radiation field. The considered theory is applied to a semiinfinite, one-dimensional semiconductor slab irradiated by light of a given frequency. Some numerical considerations based on n-type GaAs are presented. Attention is given to a determination of the radiation transmitted through the surface of the sample.

Von Roos, O.↗
NASA NTRS1985

Steady-state currents in p-n junction filaments or grains in case of large surface recombination velocities at lateral surfaces

Recently it has been pointed out that the saturation current of a semiconductor filament which constitutes part of a p-n junction diverges when the surface recombination velocity at the faces become infinitely large. Here it is pointed out that this is to be expected on physical grounds since, whenever the carrier concentration is kept off equilibrium by an outside agent, and at the same time recombination lifetimes in the bulk or in surface layers tend to zero, concentration gradients tend to infinity. As also previously noted, the situation can be remedied by using realistic (finite) surface recombination velocities in model calculations. However, this procedure leads to mathematical complexities which have been circumvented recently by the introduction of a heuristic approach. It is the aim of this paper to assess the validity of the heuristic approach by means of detailed and exact calculations.

Von Roos, O.↗
NASA NTRS1985

Adsorption and recombination of hydrogen atoms on a model graphite surface

The adsorption and recombination of atomic hydrogen on a model graphite grain have been examined in a series of calculations in which a modified, iterative, extended Hueckel program was used. The hydrogen atom is found to be chemisorbed at a site with a zero-point binding energy of 0.7 eV and at an equilibrium distance of 2.25 A above the site. Despite a barrier of about 0.4 eV between adjacent sites, calculations suggest that at temperatures as low as 10 K, an H atom will tunnel through to adjacent sites in less than one nanosecond. However, a potential barrier to the recombination of two hydrogen atoms has been found which displays high sensitivity to the mutual arrangement of the two hydrogen atoms with respect to the graphite surface. Results show that at very low temperatures, recombinations can occur only by tunneling. Consistent with experiment, the region in which H2 begins to form exhibits a repulsive potential with respect to possible chemisorption of the incipient H2 entity.

Aronowitz, S.↗
NASA NTRS1985

Theoretical studies of dissociative recombination

The calculation of dissociative recombination rates and cross sections over a wide temperature range by theoretical quantum chemical techniques is described. Model calculations on electron capture by diatomic ions are reported which illustrate the dependence of the rates and cross sections on electron energy, electron temperature, and vibrational temperature for three model crossings of neutral and ionic potential curves. It is shown that cross sections for recombination to the lowest vibrational level of the ion can vary by several orders of magnitude depending upon the position of the neutral and ionic potential curve crossing within the turning points of the v = 1 vibrational level. A new approach for calculating electron capture widths is reported. Ab initio calculations are described for recombination of O2(+) leading to excited O atoms.

Guberman, S. L.↗