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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Accessing Atomic-scale Phosphorus Dopant Distribution in Precise Silicon Devices by Advanced STEM Imaging and Spectroscopy

The structural and chemical characterization at the atomic-scale plays a critical role in understanding the structure-property relationship in precise electrical devices such as those produced by atomic-precision advanced manufacturing (APAM). APAM, utilizing hydrogen lithography in a scanning tunneling microscope, offers a potential pathway to ultra-efficient transistors, and has been developed to produce phosphorus (P)-based donor devices integrated into bare Si substrates. Structural characterization of the buried, Si with P dopant (Si:P) delta-layer in the devices by scanning transmission electron microscopy (STEM), however, is a challenge due to similar atomic number and low concentration of the P dopants. In this paper, we describe several efforts of utilizing advanced STEM imagining and spectroscopic techniques to quantify the Si:P deltalayers. STEM imaging combining low-angle and high-angle annular dark-field (LAADF, HAADF) detectors as well as atomic-scale elemental mapping using energy-dispersive X-ray spectroscopy (EDS) are used to reveal the P and defect distribution across the delta-layer processed under various thermal conditions.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

FAST (FAST AUTONOMOUS SCANNING TOOLKIT)

SF-23-006 FAST (FAST AUTONOMOUS SCANNING TOOLKIT)The software is deployed on an edge computing device at the beamline computer attached to a scanning microscope. It iteratively analyzes the data collected, then identifies new scan positions to scan next and directs the positioners that move the sample (or probe beam) to these positions. Overall, it identifies a sparse set of scan positions that are sufficient to image the full sample. This can reduce the scan time by >60%.

KANDEL, SAUGAT↗
DOE OSTI2022

Robotic automation of droplet microfluidics

Droplet microfluidics enables powerful analytic capabilities but often requires workflows involving macro- and microfluidic processing steps that are cumbersome to perform manually. Here, we demonstrate the automation of droplet microfluidics with commercial fluid-handling robotics. The workflows incorporate common microfluidic devices including droplet generators, mergers, and sorters and utilize the robot's native capabilities for thermal control, incubation, and plate scanning. The ability to automate microfluidic devices using commercial fluid handling will speed up the integration of these methods into biological workflows.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2021

Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques

The attachment of dopant precursor molecules to depassivated areas of hydrogen-terminated silicon templated with a scanning tunneling microscope (STM) has been used to create electronic devices with subnanometer precision, typically for quantum physics experiments. This process, which we call atomic precision advanced manufacturing (APAM), dopes silicon beyond the solid-solubility limit and produces electrical and optical characteristics that may also be useful for microelectronic and plasmonic applications. However, scanned probe lithography lacks the throughput required to develop more sophisticated applications. In this work, we demonstrate and characterize an APAM device workflow where scanned probe lithography of the atomic layer resist has been replaced by photolithography. An ultraviolet laser is shown to locally and controllably heat silicon above the temperature required for hydrogen depassivation on a nanosecond timescale, a process resistant to under- and overexposure. STM images indicate a narrow range of energy density where the surface is both depassivated and undamaged. Modeling that accounts for photothermal heating and the subsequent hydrogen desorption kinetics suggests that the silicon surface temperatures reached in our patterning process exceed those required for hydrogen removal in temperature-programmed desorption experiments. A phosphorus-doped van der Pauw structure made by sequentially photodepassivating a predefined area and then exposing it to phosphine is found to have a similar mobility and higher carrier density compared with devices patterned by STM. Lastly, it is also demonstrated that photodepassivation and precursor exposure steps may be performed concomitantly, a potential route to enabling APAM outside of ultrahigh vacuum.

nanoscale devices↗
DOE OSTI2020

Atomic-scale control of tunneling in donor-based devices

Atomically precise donor-based quantum devices are a promising candidate for solid-state quantum computing and analog quantum simulations. However, critical challenges in atomically precise fabrication have meant systematic, atomic scale control of the tunneling rates and tunnel coupling has not been demonstrated. Here using a room temperature grown locking layer and precise control over the entire fabrication process, we reduce unintentional dopant movement while achieving high quality epitaxy in scanning tunnelling microscope (STM)-patterned devices. Using the Si(100)2 × 1 surface reconstruction as an atomically-precise ruler to characterize the tunnel gap in precision-patterned single electron transistors, we demonstrate the exponential scaling of the tunneling resistance on the tunnel gap as it is varied from 7 dimer rows to 16 dimer rows. We demonstrate the capability to reproducibly pattern devices with atomic precision and a donor-based fabrication process where atomic scale changes in the patterned tunnel gap result in the expected changes in the tunneling rates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Python STXM Control (pystxmcontrol) v0.1

The software is a complete solution for controlling scanning microscopes. It provides a low level interface to device hardware via drivers, communication and coordination layers for managing scan execution and data acquisition, a graphical interface and scripting interface for user interaction. With optimized hardware drivers and low software overhead this software is 10 times faster than the legacy software it is replacing.

Shapiro, David [Lawrence Berkeley National Laborat↗
DOE OSTI2026

A cryogenic near-field thermal diode leveraging superconducting phase transitions

Control of charge and heat transport is essential for computing and thermal management technologies. Recent work with superconducting materials has shown rectified electrical supercurrents near liquid helium temperatures. However, despite large theoretical interest and expected impact on quantum technologies, no experiments have demonstrated control of nanoscale radiative heat currents at cryogenic temperatures. Here we study photon-mediated thermal transport in nanogaps between niobium and gold. Using novel scanning calorimetric probes and nanofabricated devices, we reveal a ~20-fold suppression of radiative heat transport, when niobium transitions from the metallic to the superconducting state. Taking advantage of this effect, we also demonstrate a niobium-based cryogenic thermal diode with a heat rectification ratio of 70%. As a result, the experimental techniques and advances presented here will enable studying nanoscale thermal transport in quantum materials and advancing thermal management of superconducting devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices

As a first step to porting scanning tunneling microscopy methods of atomic-precision fabrication to a strained-Si/SiGe platform, we demonstrate post-growth P atomic-layer doping of SiGe heterostructures. To preserve the substrate structure and elastic state, we use a T ≤ 800 °C process to prepare clean Si 0.86 Ge 0.14 surfaces suitable for atomic-precision fabrication. P-saturated atomic-layer doping is incorporated and capped with epitaxial Si under a thermal budget compatible with atomic-precision fabrication. Hall measurements at T = 0.3 K show that the doped heterostructure has R $\square$ = 570 ± 30 Ω , yielding an electron density n e = 2.1 ± 0.1 × 10 14 cm -2 and mobility μ e = 52 ± 3 cm 2 V -1 s -1 , similar to saturated atomic-layer doping in pure Si and Ge. The magnitude of μ e and the complete absence of Shubnikov–de Haas oscillations in magnetotransport measurements indicate that electrons are overwhelmingly localized in the donor layer, and not within a nearby buried Si well. Finally, this conclusion is supported by self-consistent Schrödinger-Poisson calculations that predict electron occupation primarily in the donor layer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Hysteresis Index: A Figure without Merit for Quantifying Hysteresis in Perovskite Solar Cells

Not long after the breakthrough publications on lead halide perovskite-based solar cells, researchers noticed something peculiar about these devices: the current-voltage scans, the most common technique to determine a solar cell's efficiency, yielded different results depending on the scan direction. In the very first swathe of publications, researchers neglected discussing this observation, opting to simply publish the scan that yielded the higher efficiency. However, this was untenable as this scan-direction dependence clearly indicated that the absorber system was undergoing a transient change due to the external bias, and as such, the scanned measurements were yielding non-steady-state values. Unger et al.(1) and Snaith et al.(2) proposed two approaches to remedy this issue, both of which sought to take the unknown, internal changes of the material into account by devising steady-state measurements. This was done by either significantly slowing down the scan rate, such that the system was allowed to reach steady state at each point of the scan, or by measuring the stabilized or steady-state photocurrent at the maximum power point voltage. The advantage of the former technique is that performance parameters such as the short-circuit current (Jsc), open-circuit voltage (Voc), fill factor (FF), and series resistance can be determined with high fidelity. The latter has the advantages of being much faster to perform, allowing for rapid estimation of the performance of a multitude of cells, and enabling approximation of the solar cell performance under actual operating conditions. The community largely acknowledged and debated the phenomenon of hysteresis, but only slowly took up either of the two recommendations.

14 SOLAR ENERGY↗
DOE OSTI2022

Electronic structure of epitaxially grown and regrown GaN pn junctions characterized by scanning Kelvin probe and capacitance microscopy

Epitaxial regrowth of GaN pn junctions is a key technology for realization of a variety of high-performance GaN power electronic devices. However, the regrowth process can introduce impurities and defects that degrade a device’s performance. Here, we show that scanning Kelvin probe force microscopy and scanning capacitance microscopy can be used in a cross-sectional geometry to probe dopant distributions and an electronic structure in epitaxially grown GaN pn junctions. These measurements enable profiling of potential and dopant distributions across GaN pn junctions produced by uninterrupted epitaxial growth and by regrowth on an etched surface. Clear differences are observed in comparisons to the electronic structure of these two types of junctions that can be correlated with results of complementary characterization of dopant distributions reported for similarly grown structures. These measurements also suggest the presence of defects in etch-and-regrow pn junction structures that extend nearly 1 μm below the regrown interface.

Kim, Tae-Hyeon (ORCID:0000000341530617)↗
DOE OSTI2020

Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques

The attachment of dopant precursor molecules to depassivated areas of hydrogen-terminated silicon templated with a scanning tunneling microscope (STM) has been used to create electronic devices with sub-nanometer precision, typically for quantum physics demonstrations, and to dope silicon past the solid-solubility limit, with potential applications in microelectronics and plasmonics. However, this process, which we call atomic precision advanced manufacturing (APAM), currently lacks the throughput required to develop sophisticated applications because there is no proven scalable hydrogen lithography pathway. Here, we demonstrate and characterize an APAM device workflow where STM lithography has been replaced with photolithography. An ultraviolet laser is shown to locally heat silicon controllably above the temperature required for hydrogen depassivation. STM images indicate a narrow range of laser energy density where hydrogen has been depassivated, and the surface remains well-ordered. A model for photothermal heating of silicon predicts a local temperature which is consistent with atomic-scale STM images of the photo-patterned regions. Finally, a simple device made by exposing photo-depassivated silicon to phosphine is found to have a carrier density and mobility similar to that produced by similar devices patterned by STM.

42 ENGINEERING↗
DOE OSTI2023

Standoff inspection using geometry-informed full-wavefield response measurements

A vibrometer may measure acoustic responses in portions of a structure along a scan path to acoustic excitation of the structure. A ranging device may measure distances to the portions of the structure along the scan path. A three-dimensional point cloud may be generated based on the acoustic responses in the portions of the structure and the distances to the portions of the structure. The three-dimensional point cloud may include points representing geometry of the portions of the structure. The points may be associated with the acoustic responses in corresponding portions of the structure. One or more properties of the structure may be determined based on an analysis of the three-dimensional point cloud.

Flynn, Eric Brian↗
DOE OSTI2024

Impedance Scan of Inverter-Based Resources and Diesel Generator for Stability Analysis

Impedance-based methods are widely used for power system stability analysis with inverter-based resources (IBRs), e.g., assessing dynamic interactions between the power grid and an IBR, control interactions between multiple IBRs, and the sub-synchronous oscillation and damping phenomenon. Since it is difficult to get a numerical model 100% matching with the hardware IBR, using the hardware inverter directly to obtain its output impedance has become a prominent approach nowadays. Therefore, this article presents the impedance scan using hardware IBRs, and also a hardware diesel generator as it still stays with the grid before the grid completely goes to renewable. The devices under test (DuTs) for the impedance scan includes two 3-..phi.., 480 V, 60 Hz commercial grid-forming IBRs (one of 250 kVA and another of 125 kVA rating) in series with ..delta..-Y transformers, one 3-..phi.., 480 V, 60 Hz commercial grid-following IBR (of 125 kVA rating), and a 3-..phi.., 480 V, 60 Hz commercial diesel generator (of 187.5 kVA rating). Using voltage signals perturbed with sub-, inter-, and higher harmonic components, and measuring the current response, the positive-sequence impedances are computed via an offline-based post-analysis. Moreover, best-fit transfer functions are estimated that closely resemble the measured data points of the positive-sequence impedances. Based on the observations from various outcomes of the hardware experiments, this article also provides some fundamental insights on the equivalent positive-sequence impedance of a combination of multiple hardware components by comparing the estimated and the empirically computed impedances. A comparative insight on the damping capability of the DuTs using the positive-sequence impedances of the hardware is also discussed.

current measurement↗
DOE OSTI2024

Impedance Scan of Inverter-Based Resources and Diesel Generator for Stability Analysis: Preprint

Impedance-based methods are widely used for power system stability analysis with inverter-based resources (IBRs), e.g., assessing dynamic interactions between the power grid and an IBR, control interactions between multiple IBRs, and the sub-synchronous oscillation and damping phenomenon. Since it is difficult to get a numerical model 100% matching with the hardware IBR, using the hardware inverter directly to obtain its output impedance has become a prominent approach nowadays. Therefore, this article presents the impedance scan using hardware IBRs, and also a hardware diesel generator as it still stays with the grid before the grid completely goes to renewable. The devices under test (DuTs) for the impedance scan includes two 3-..phi.., 480 V, 60 Hz commercial grid-forming IBRs (one of 250 kVA and another of 125 kVA rating) in series with ..delta..-Y transformers, one 3-..phi.., 480 V, 60 Hz commercial grid-following IBR (of 125 kVA rating), and a 3-..phi.., 480 V, 60 Hz commercial diesel generator (of 187.5 kVA rating). Using voltage signals perturbed with sub-, inter-, and higher harmonic components, and measuring the current response, the positive-sequence impedances are computed via an offline- based post-analysis. Moreover, best-fit transfer functions are estimated that closely resemble the measured data points of the positive-sequence impedances. Based on the observations from various outcomes of the hardware experiments, this article also provides some fundamental insights on the equivalent positive- sequence impedance of a combination of multiple hardware components by comparing the estimated and the empirically computed impedances. A comparative insight on the damping capability of the DuTs using the positive-sequence impedances of the hardware is also discussed.

grid following inverter↗
DOE OSTI2019

Single-spin sensing of domain-wall structure and dynamics in a thin-film skyrmion host

Skyrmions are nanoscale magnetic structures with features promising for future low-power memory or logic devices. In this work, we demonstrate scanning techniques based on nitrogen vacancy center magnetometry that simultaneously probe both the magnetic dynamics and structure of room temperature skyrmion bubbles in a thin-film system Ta/CoFeB/MgO. We confirm the handedness of the Dzyaloshinskii-Moriya interaction in this material and extract the magnitude of the helicity angle of the skyrmion bubbles. Our measurements also show that the skyrmion bubbles in this material change size in discrete steps, dependent on the local pinning environment, with their average size determined dynamically as their domain walls hop between pinning sites. In addition, an increase in magnetic field noise is observed near skyrmion bubble domain walls. These measurements highlight the importance of interactions between internal degrees of freedom of skyrmion bubble domain walls and pinning sites in thin-film systems. Furthermore, our observations have relevance for future devices based on skyrmion bubbles where pinning interactions will determine important aspects of current-driven motion.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Quantification of Dopant Profiles in SiGe HBT Devices

We report on the use of atom probe tomography (APT), scanning transmission electron microscopy (STEM), and secondary ion mass spectroscopy (SIMS) to characterize doping profiles in the base region of SiGe HBT devices. We compare SIMS profiles obtained from large regions (400 um 2 ) of the device wafer to profiles obtained from individual devices of different emitter window widths (0.25 and 0.18 um 2 ) using APT. From this comparison we show how APT can provide a deeper insight into evaluating the fabrication process and its effects on electrical models of device performance and enabling the building of higher performance systems. We also demonstrate that APT can be used to characterize defects within the intrinsic regions of a device.

Jones, Eric↗
DOE OSTI2018

Fluorescence and Nonlinear Optical Properties of Alizarin Red S in Solvents and Droplet

The enhancement of the nonlinear properties of materials is an interesting topic since it has many applications in optical devices and medicines. The Z-scan technique was used to study the values of the two-photon absorption (β), second-order molecular hyperpolarizability (γ{sub R}), third-order susceptibility (χ{sub R}), and nonlinear refractive index (n{sub 2}) of Alizarin Red S in different media using a continuous-wave diode-pump laser radiation at 532 nm. For Alizarin Red S in a droplet, the β, n{sub 2}, χ{sub R,} and γ{sub R} were estimated at the order of 10{sup −7} cm{sup 2}/W and 10{sup −12} cm/W, 10{sup −3} m{sup 3} W{sup −1} s{sup −1} and 10{sup −24} m{sup 6} W{sup −1} s{sup −1}, respectively. The results indicated that the values of β and n{sub 2} reduced, whereas the values of χ{sub R} and γ{sub R} were enhanced when the solvent was changed from droplet to water, DMF, and dimethyl sulfoxide due to the change in the solvent’s dielectric constant (ε). Moreover, the values of β were enhanced by an increase in the concentration of the surfactant in the aqueous solution. The absorption spectra of Alizarin Red S in the aqueous solution was observed at 428 nm, and a few red shifts in the absorption spectra were observed with a reduction in the dielectric constant of the medium. The same effect was observed in the absorption spectra of Alizarin Red S in the droplet when the bulk dielectric constant reduced. The dielectric constant can affect the fluorescence spectra of Alizarin Red S when the solution is changed from water to dimethyl sulfoxide. The dipole moments of Alizarin Red S in the different media were studied using the quantum perturbation theory.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2022

Impact of the electron density and temperature gradient on drift-wave turbulence in the Large Plasma Device

In this paper we present an experimental study of edge turbulence in the Large Plasma Device at UCLA. We utilize a scan of discharge power and prefill pressure (neutral density) to show experimentally that turbulent density fluctuations decrease with decreasing density gradient, as predicted for resistive drift-wave turbulence (RDWT). As expected for RDWT, we observe that the cross-phase between the density and potential fluctuations is close to 0. Moreover, the addition of an electron temperature gradient leads to a reduction in the amplitude of the density fluctuations, as expected for RDWT. However, counter to theoretical expectations, we find that the potential fluctuations do not follow the same trends as the density fluctuations for changes either in density gradients or the addition of a temperature gradient. The disconnect between the density and potential fluctuations is connected to changes in the parallel flows as a result of differences in the prefill pressure, i.e. neutral density. Further analysis of the density and potential fluctuation spectra show that the electron temperature gradient reduces the low frequency fluctuations up to $10 \,{\rm kHz}$ and the introduction of a temperature gradient leads to an unexpected ${\sim }{\rm \pi}$ shift of the density–potential cross-phase at ${\sim }10\,{\rm kHz}$ , while maintaining the typical resistive drift-wave cross-phase at lower frequencies. These experiments partly confirm existing knowledge on resistive drift-wave turbulence, but also introduce new observations that indicate a need for dedicated nonlinear three-dimensional turbulence simulations that include neutrals.

Physics↗