SEARCH · Search NASA
Results for “SEEBECK EFFECT”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Influence of Thickness and Interface on the Low-Temperature Enhancement of the Spin Seebeck Effect in YIG Films
Not Available
Understanding and control of bipolar self-doping in copper nitride
Semiconductor materials that can be doped both n-type and p-type are desirable for diode-based applications and transistor technology. Copper nitride (Cu{sub 3}N) is a metastable semiconductor with a solar-relevant bandgap that has been reported to exhibit bipolar doping behavior. However, deeper understanding and better control of the mechanism behind this behavior in Cu{sub 3}N is currently lacking in the literature. In this work, we use combinatorial growth with a temperature gradient to demonstrate both conduction types of phase-pure, sputter-deposited Cu{sub 3}N thin films. Room temperature Hall effect and Seebeck effect measurements show n-type Cu{sub 3}N with 10{sup 17} electrons/cm{sup 3} for low growth temperature (≈35 °C) and p-type with 10{sup 15} holes/cm{sup 3}–10{sup 16} holes/cm{sup 3} for elevated growth temperatures (50 °C–120 °C). Mobility for both types of Cu{sub 3}N was ≈0.1 cm{sup 2}/Vs–1 cm{sup 2}/Vs. Additionally, temperature-dependent Hall effect measurements indicate that ionized defects are an important scattering mechanism in p-type films. By combining X-ray absorption spectroscopy and first-principles defect theory, we determined that V{sub Cu} defects form preferentially in p-type Cu{sub 3}N, while Cu{sub i} defects form preferentially in n-type Cu{sub 3}N, suggesting that Cu{sub 3}N is a compensated semiconductor with conductivity type resulting from a balance between donor and acceptor defects. Based on these theoretical and experimental results, we propose a kinetic defect formation mechanism for bipolar doping in Cu{sub 3}N that is also supported by positron annihilation experiments. Overall, the results of this work highlight the importance of kinetic processes in the defect physics of metastable materials and provide a framework that can be applied when considering the properties of such materials in general.
Heat-driven spin transport in a ferromagnetic metal
As a non-magnetic heavy metal is attached to a ferromagnet, a vertically flowing heat-driven spin current is converted to a transverse electric voltage, which is known as the longitudinal spin Seebeck effect (SSE). If the ferromagnet is a metal, this voltage is also accompanied by voltages from two other sources, i.e., the anomalous Nernst effect in both the ferromagnet and the proximity-induced ferromagnetic boundary layer. By properly identifying and carefully separating those different effects, we find that in this pure spin current circuit the additional spin current drawn by the heavy metal generates another significant voltage by the ferromagnetic metal itself which should be present in all relevant experiments.
How to realize a spin-dependent Seebeck diode effect in metallic zigzag γ-graphyne nanoribbons?
The spin-dependent Seebeck effect (SDSE) is one of the core topics of spin caloritronics.
Features and regularities in behavior of thermoelectric properties of rare-earth, transition, and other metals under high pressure up to 20 GPa
We report results of systematic investigations of the thermoelectric properties of a number of rare-earth metals, transition metals, and other metals under high pressure up to 20 GPa at room temperature. We studied an effect of applied pressure on the Seebeck effect of scandium (Sc), yttrium (Y), lanthanum (La), europium (Eu), ytterbium (Yb), iron (Fe), manganese (Mn), chromium (Cr), gold (Au), tin (Sn), and CeNi alloy. We found that the high-pressure behavior of the thermopower of three rare-earth metals, namely, Sc, Y, and La, follows a general trend that has been established earlier in lanthanides, and addressed to a s → d electron transfer. Europium and ytterbium, on the contrary, showed a peculiar high-pressure behavior of the thermopower with peaks at near 0.7–1 GPa for Eu and 1.7–2.5 GPa for Yb. Chromium, manganese, and tin demonstrated a gradual and pronounced lowering of the absolute value of the thermopower with pressure. Above 9–11 GPa, the Seebeck coefficients of Mn and Sn were inverted, from n- to p-type for Mn and from p- to n-type for Sn. The Seebeck effect in iron was rather high as ∼16 μV/K and weakly varied with pressure up to ∼11 GPa. Above ∼11 GPa, it started to drop dramatically with pressure to highest pressure achieved 18 GPa. Upon decompression cycle the thermopower of iron returned to the original high values but demonstrated a wide hysteresis loop. We related this behavior in iron to the known bcc (α-Fe) → hcp (ε-Fe) phase transition, and proposed that the thermoelectricity of the α-Fe phase is mainly contributed by the spin Seebeck effect, likewise, the thermoelectricity of the ε-Fe phase—by the conventional diffusion thermopower. We compare the pressure dependencies of the thermopower for different groups of metals and figure out some general trends in the thermoelectricity of metals under applied stress.
Thermoelectrics: From longitudinal to transverse
Thermoelectric power generation is a promising technology to realize a sustainable society because it directly converts thermal energy into electricity in a solid. Conventional thermoelectric generation is driven by the Seebeck effect, discovered by T.J. Seebeck in 1821, in which a charge current J c is generated in the direction parallel to a temperature gradient ∇T, the longitudinal geometry. Here, the ratio between the generated longitudinal electromotive force and applied ∇T is defined as the Seebeck coefficient. As shown in Figure 1A, a thermoelectric module based on the Seebeck effect typically consists of many pairs (128 for a 12V unit) of p-type and n-type conductors alternately arranged and connected in series. Since the Seebeck coefficient of a p-type (n-type) conductor is positive (negative), the thermopower in each element adds to the total output in the Seebeck module. This configuration is needed to achieve a practical voltage because each element only supplies millivolts but limits the use of thermoelectric generators. The efficiency of thermoelectric generators is characterized by the thermoelectric figure of merit, zT. Despite a 3-fold improvement in zT resulting from materials research over the last two decades, little progress has been made in their practical use; this is ascribed to the technological challenges in contact technology. The contacts on the hot side are subject to thermal degradation. All contacts (512 for a 12V unit) add electrical and thermal contact resistances that reduce the device efficiency to a fraction of that promised by the materials.
Boride-based Ceramic Super-high Temperature Thermocouples in Harsh Environments (Final Scientific/Technical Report)
An electromotive force (emf) can be generated along a temperature gradient between the cold end and hot end of a thermoelectric material, termed the Seebeck effect. Based on the Seebeck effect, metallic alloys have been extensively employed to detect temperatures for centuries, named thermocouples. However, commercially available thermocouple alloys suffer from limitations, such as oxidation, chemical degradation, and poor long-term stability under high-temperature harsh environments. This DOE-funded project aimed to develop high-temperature, chemically tolerant thermocouples suitable for operation in extreme environments relevant to semiconducting thermoelectric materials. The research focused on boride-based semiconducting thermoelectric compounds as candidates for next-generation thermocouples with enhanced oxidation resistance, chemical stability, and thermal robustness under conditions representative of charcoal-fired electricity facilities. During the funded years, boride materials were synthesized using an arc-plasma technique under ambient air and argon atmospheres, enabling scalable and cost-effective production compared with conventional boride fabrication methods. The synthesized borides were processed into nanostructured powders, followed by consolidation into dense bulk materials using a spark plasma sintering (SPS) bottom-up approach. Comprehensive characterization was performed, including microstructural analysis, electrical transport measurements, and optical and thermal property evaluation. Both p-type and n-type boride electric legs were fabricated and integrated into boride-based thermocouples. The thermal and irradiation stabilities of the boride nanomaterials and bulk thermoelectric materials were systematically evaluated to assess suitability for long-term operation in harsh environments. Additionally, 12 students were broadly hands-on trained spanning the full research workflow, including word processing and technical editing (e.g., LATEX for manuscript and poster preparation), data collection and analysis (using Python and related libraries and hardware interfaces), sample preparation (including arc-plasma synthesis and spark plasma sintering), and advanced characterization techniques (such as X-ray diffraction, UV–vis spectroscopy, electron microscopy, differential thermal analysis (DTA), and Seebeck coefficient measurements, etc). Overall, this project demonstrated the feasibility of boride-based thermoelectric materials as durable high-temperature thermocouples, providing a promising pathway toward robust temperature sensing technologies aligned with DOE energy infrastructure and extreme-environment monitoring needs.
Thermal generation of spin current in epitaxial CoFe 2 O 4 thin films
The longitudinal spin Seebeck effect (LSSE) has been investigated in high-quality epitaxial CoFe 2 O 4 (CFO) thin films. The thermally excited spin currents in the CFO films are electrically detected in adjacent Pt layers due to the inverse spin Hall effect (ISHE). The LSSE signal exhibits a linear increase with increasing temperature gradient, yielding a LSSE coefficient of –100 nV/K at room temperature. The temperature dependence of the LSSE is investigated from room temperature down to 30 K, showing a significant reduction at low temperatures, revealing that the total amount of thermally generated magnons decreases. Moreover, we demonstrate that the spin Seebeck effect is an effective tool to study the magnetic anisotropy induced by epitaxial strain, especially in ultrathin films with low magnetic moments.
Significant enhancement of thermoelectric properties and metallization of Al-doped Mg{sub 2}Si under pressure
We report results of investigations of electronic transport properties and lattice dynamics of Al-doped magnesium silicide (Mg{sub 2}Si) thermoelectrics at ambient and high pressures to and beyond 15 GPa. High-quality samples of Mg{sub 2}Si doped with 1 at. % of Al were prepared by spark plasma sintering technique. The samples were extensively examined at ambient pressure conditions by X-ray diffraction studies, Raman spectroscopy, electrical resistivity, magnetoresistance, Hall effect, thermoelectric power (Seebeck effect), and thermal conductivity. A Kondo-like feature in the electrical resistivity curves at low temperatures indicates a possible magnetism in the samples. The absolute values of the thermopower and electrical resistivity, and Raman spectra intensity of Mg{sub 2}Si:Al dramatically diminished upon room-temperature compression. The calculated thermoelectric power factor of Mg{sub 2}Si:Al raised with pressure to 2–3 GPa peaking in the maximum the values as high as about 8 × 10{sup −3} W/(K{sup 2}m) and then gradually decreased with further compression. Raman spectroscopy studies indicated the crossovers near ∼5–7 and ∼11–12 GPa that are likely related to phase transitions. The data gathered suggest that Mg{sub 2}Si:Al is metallized under moderate pressures between ∼5 and 12 GPa.
Electrical parameters of polycrystalline Sm{sub 1–x}Eu{sub x}S rare-earth semiconductors
The electrical parameters of polycrystalline Sm{sub 1–x}Eu{sub x}S compounds are studied. The conductivity, concentration of free electrons, their mobility, and the conductivity activation energy are measured as functions of the quantity x. The structural parameters of the compounds are determined. A heterostructure is fabricated with x in the range from 0 to 0.3, and the electrical voltage generated by the structure, when heated to a temperature of T = 450 K, due to the thermovoltaic effect is measured. This voltage is found to be 55 mV. A method for measuring the thermally induced voltage is described. The method provides a means for separating the thermovoltaic effect from the Seebeck effect.
Magnon mode selective spin transport in compensated ferrimagnets
We investigate the generation of magnonic thermal spin currents and their mode selective spin transport across interfaces in insulating, compensated ferrimagnet/normal metal bilayer systems. The spin Seebeck effect signal exhibits a nonmonotonic temperature dependence with two sign changes of the detected voltage signals. Using different ferrimagnetic garnets, we demonstrate the universality of the observed complex temperature dependence of the spin Seebeck effect. To understand its origin, we systematically vary the interface between the ferrimagnetic garnet and the metallic layer, and by using different metal layers we establish that interface effects play a dominating role. They do not only modify the magnitude of the spin Seebeck effect signal but in particular also alter its temperature dependence. By varying the temperature, we can select the dominating magnon mode and we analyze our results to reveal the mode selective interface transmission probabilities for different magnon modes and interfaces. As a result, the comparison of selected systems reveals semiquantitative details of the interfacial coupling depending on the materials involved, supported by the obtained field dependence of the signal.
Infrared and thermoelectric power generation in thin atomic layer deposited Nb-doped TiO{sub 2} films
Infrared radiation is used to radiatively transfer heat to a nanometric power generator (NPG) device with a thermoelectric Nb-doped TiO{sub 2} film deposited by atomic layer deposition (ALD) as the active element, onto a borosilicate glass substrate. The linear rise of the produced voltage with respect to the temperature difference between the “hot” and “cold” junctions, typical of the Seebeck effect, is missing. The discovery of the violation of the Seebeck effect in NPG devices combined with the ability of ALD to tune thermoelectric thin film properties could be exploited to increase the efficiency of these devices for energy harvesting purposes.
Rectified motion in an asymmetrically structured channel due to induced-charge electrokinetic and thermo-kinetic phenomena
It would be advantageous to move fluid by the gradient of random thermal noises that are omnipresent in the natural world. To achieve this motion, we propose a rectifier that uses a thermal noise along with induced-charge electroosmosis and electrophoresis (ICEO and ICEP) around a metal post cylinder in an asymmetrically structured channel and numerically examine its rectification performance. By the boundary element method combined with the thin double layer approximation, we find that rectified motion occurs in the asymmetrically structured channel due to ICEO and ICEP. Further, by thermodynamical and equivalent circuit methods, we discuss a thermal voltage that drives a rectifier consisting of a fluidic channel of an electrolyte and an impedance as a noise source. Our calculations show that fluid can be moved in the asymmetrically structured channel by the fluctuation of electric fields due to a thermal noise only when there is a temperature difference. In addition, our simple noise argument provides a different perspective for the thermo-kinetic phenomena (around a metal post) which was predicted based on the electrolyte Seebeck effect in our previous paper [H. Sugioka, “Nonlinear thermokinetic phenomena due to the Seebeck effect,” Langmuir 30, 8621 (2014)].
Thermoelectric current in a graphene Cooper pair splitter
Generation of electric voltage in a conductor by applying a temperature gradient is a fundamental phenomenon called the Seebeck effect. This effect and its inverse is widely exploited in diverse applications ranging from thermoelectric power generators to temperature sensing. Recently, a possibility of thermoelectricity arising from the interplay of the non-local Cooper pair splitting and the elastic co-tunneling in the hybrid normal metal-superconductor-normal metal structures was predicted. Here, we report the observation of the non-local Seebeck effect in a graphene-based Cooper pair splitting device comprising two quantum dots connected to an aluminum superconductor and present a theoretical description of this phenomenon. The observed non-local Seebeck effect offers an efficient tool for producing entangled electrons.
Charge carrier effective mass and concentration derived from combination of Seebeck coefficient and Te 125 NMR measurements in complex tellurides
Thermoelectric materials utilize the Seebeck effect to convert heat to electrical energy. The Seebeck coefficient (thermopower), S, depends on the free (mobile) carrier concentration, n, and effective mass, m*, as S ~ m*/n 2/3 . The carrier concentration in tellurides can be derived from 125 Te nuclear magnetic resonance (NMR) spin-lattice relaxation measurements. The NMR spin-lattice relaxation rate, 1/T 1 , depends on both n and m* as 1/T 1 ~(m*) 3/2 n (within classical Maxwell-Boltzmann statistics) or as 1/T1~(m*) 2 n 2/3 (within quantum Fermi-Dirac statistics), which challenges the correct determination of the carrier concentration in some materials by NMR. Here it is shown that the combination of the Seebeck coefficient and 125 Te NMR spin-lattice relaxation measurements in complex tellurides provides a unique opportunity to derive the carrier effective mass and then to calculate the carrier concentration. This approach was used to study Ag x Sb x Ge 50–2x Te 50 , well-known GeTe-based high-efficiency tellurium-antimony-germanium-silver thermoelectric materials, where the replacement of Ge by [Ag+Sb] results in significant enhancement of the Seebeck coefficient. Thus, values of both m* and n derived using this combination show that the enhancement of thermopower can be attributed primarily to an increase of the carrier effective mass and partially to a decrease of the carrier concentration when the [Ag+Sb] content increases.
Long lifetime of thermally excited magnons in bulk yttrium iron garnet
Spin currents are generated within the bulk of magnetic materials due to heat flow, an effect called intrinsic spin Seebeck. This bulk bosonic spin current consists of a diffusing thermal magnon cloud, parametrized by the magnon chemical potential (μ m ), with a diffusion length of several microns in yttrium iron garnet (YIG). Transient optothermal measurements of the spin-Seebeck effect (SSE) as a function of temperature reveal the time evolution of μ m due to intrinsic SSE in YIG. The interface SSE develops at times <2 ns while the intrinsic SSE signal continues to evolve at times >500 μs, dominating the temperature dependence of SSE in bulk YIG. Time-dependent SSE data are fit to a multitemperature model of coupled spin/heat transport using the finite-element method (FEM), where the magnon spin lifetime (τ) and magnon-phonon thermalization time (τ mp ) are used as fit parameters. From 300 to 4 K, τ mp ) varies from 1 to 10 ns, whereas tau varies from 2 to 60 μ s with the spin lifetime peaking at 90 K. At low temperature, a reduction in τ is observed consistent with impurity relaxation reported in ferromagnetic resonance measurements. Finally, these results demonstrate that the thermal magnon cloud in YIG contains extremely low-frequency magnons (similar to 10 GHz), providing spectral insight to the microscopic scattering processes involved in magnon spin/heat diffusion.
Spin Seebeck devices using local on-chip heating
A micro-patterned spin Seebeck device is fabricated using an on-chip heater. Current is driven through a Au heater layer electrically isolated from a bilayer consisting of Fe{sub 3}O{sub 4} (insulating ferrimagnet) and a spin detector layer. It is shown that through this method it is possible to measure the longitudinal spin Seebeck effect (SSE) for small area magnetic devices, equivalent to traditional macroscopic SSE experiments. Using a lock-in detection technique, it is possible to more sensitively characterize both the SSE and the anomalous Nernst effect (ANE), as well as the inverse spin Hall effect in various spin detector materials. By using the spin detector layer as a thermometer, we can obtain a value for the temperature gradient across the device. These results are well matched to values obtained through electromagnetic/thermal modeling of the device structure and with large area spin Seebeck measurements.