Present state of solar cell production
Solar cell production techniques - N-P cells for increased radiation tolerance
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Solar cell production techniques - N-P cells for increased radiation tolerance
Silicon solar cells impurities, radiation resistance, fabrication, nonsilicon materials, development, etc
Si solar cells low temperature and solar intensity performance optimization by identifying and eliminating low output problems
Silicon solar cell with drift fields of various widths and magnitudes, considering performance changes before and after radiation
CdS solar cell model noting spectral response, V-I characteristic and temperature variation
CdS solar cell model, discussing p-n junction, CdS and copper sulfide properties and microscopic junction formation and behavior
The Pd contact to GaAs was studied using backscattering, Auger analysis, and sheet resistance measurements. Several metallurgical phases were present at low temperatures, but PdGa was the dominant phase in samples annealed at 500 C. Ti/Pd/Ag contacts appeared to have the lowest contact resistance. Etchback epitaxy (EBE) was compared to saturated melt epitaxy (SME) method of growing liquid phase epitaxial layers. The SME method resulted in a lower density of Ga microdroplets in the grown layer, although the best solar cells were made by the EBE method. Photoluminescence was developed as a tool for contactless analysis of GaAs cells. Efficiencies of over 8 percent were measured at 250 C.
Concentrator solar cells are continuing to get more consideration for use in power systems. This interest is because concentrator systems can have a net lower cost per watt in solar cell materials plus ongoing improvements in sun-tracking technology. Quantitatively measuring the efficiency of solar cells under concentration is difficult. Traditionally, the light concentration on solar cells has been determined by using a ratio of the measured solar cell s short circuit current to that at one sun, this assumes that current changes proportionally with light intensity. This works well with low to moderate (<20 suns) concentration levels on "well-behaved" linear cells but does not apply when cells respond superlinearly, current increases faster than intensity, or sublinearly, current increases more slowly than intensity. This paper continues work on using view factors to determine the concentration level and linearity of the solar cell with mathematical view factor analysis and experimental results [1].
Loss mechanisms in high-efficiency solar cells were discussed. Fundamental limitations and practical solutions were stressed. Present cell efficiency is limited by many recombination sites: emitter, base, contacts, and oxide/silicon interface. Use of polysilicon passivation was suggested. After reduction of these losses, a 25% efficient cell could be built. A floating emitter cell design was shown that had the potential of low recombination losses.
A solar cell shingle was made of an array of solar cells on a lower portion of a substantially rectangular shingle substrate made of fiberglass cloth or the like. The solar cells may be encapsulated in flourinated ethylene propylene or some other weatherproof translucent or transparent encapsulant to form a combined electrical module and a roof shingle. The interconnected solar cells were connected to connectors at the edge of the substrate through a connection to a common electrical bus or busses. An overlap area was arranged to receive the overlap of a cooperating similar shingle so that the cell portion of the cooperating shingle may overlie the overlap area of the roof shingle. Accordingly, the same shingle serves the double function of an ordinary roof shingle which may be applied in the usual way and an array of cooperating solar cells from which electrical energy may be collected.
Crystal growth procedures, fabrication techniques, and theoretical analysis were developed in order to make GaAlAs-GaAs solar cell structures which exhibit high performance at air mass 0 illumination and high temperature conditions.
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The technical activities were directed toward the assessment of encapsulation processes for use with ethylene/vinyl acetate copolymer as the pottant. Potentially successful formulations were prepared by compounding the raw polymer with ultraviolet absorbers and crosslinking agents to give stabilized and curable compositions. The compounded resin was then converted to a more useful form with an extruder to give pottant in sheets that could be more easily used in lamination. After experimenting with various techniques, the vacuum-bag process was found to be an excellent encapsulation method. Miniature single-celled and multi-celled solar modules of both substrate and superstrate designs were prepared by this technique. The resulting modules were of good appearance, were bubble-free, and successfully passed the thermal cycle test.
The method of constructing a high voltage, low power, multicell solar array is described. A solar cell base region is formed in a substrate such as but not limited to silicon or sapphire. A protective coating is applied on the base and a patterned etching of the coating and base forms discrete base regions. A semiconductive junction and upper active region are formed in each base region, and defined by photolithography. Thus, discrete cells which are interconnected by metallic electrodes are formed.
Electrical characteristics of OCLI violet N/P silicon solar cells are presented in graphical and tabular format as function of solar illumination intensity and temperature.
The etch-back epitaxy process is described for producing thin, graded composition GaAlAs layers. The palladium-aluminum contact system is discussed along with its associated problems. Recent solar cell results under simulated air mass zero light and at elevated temperatures are reported and the growth of thin polycrystalline GaAs films on foreign substrates is developed.
Electrical characteristics of liquid phase epitaxy, P/N gallium aluminum arsenide solar cells are presented in graphical and tabular format as a function of solar illumination intensity and temperature. The solar cells were exposed to 1 MeV electron fluences of, respectively, 0, one hundred trillion, one quadrillion, and ten quadrillion e/sq cm.
Tandem photovoltaic cells, as proposed by Jackson (1955) to increase the efficiency of solar energy conversion, involve the construction of a system of stacked p/n homojunction photovoltaic cells composed of different semiconductors. It had been pointed out by critics, however, that the total power which could be extracted from the cells in the stack placed side by side was substantially greater than the power obtained from the stacked cells. A reexamination of the tandem cell concept in view of the development of the past few years is conducted. It is concluded that the use of tandem cell systems in flat plate collectors, as originally envisioned by Jackson, may yet become feasible as a result of the development of economically acceptable solar cells for large scale terrestrial power generation.