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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS2000

Substrate flexibility regulates growth and apoptosis of normal but not transformed cells

One of the hallmarks of oncogenic transformation is anchorage-independent growth (27). Here we demonstrate that responses to substrate rigidity play a major role in distinguishing the growth behavior of normal cells from that of transformed cells. We cultured normal or H-ras-transformed NIH 3T3 cells on flexible collagen-coated polyacrylamide substrates with similar chemical properties but different rigidity. Compared with cells cultured on stiff substrates, nontransformed cells on flexible substrates showed a decrease in the rate of DNA synthesis and an increase in the rate of apoptosis. These responses on flexible substrates are coupled to decreases in cell spreading area and traction forces. In contrast, transformed cells maintained their growth and apoptotic characteristics regardless of substrate flexibility. The responses in cell spreading area and traction forces to substrate flexibility were similarly diminished. Our results suggest that normal cells are capable of probing substrate rigidity and that proper mechanical feedback is required for regulating cell shape, cell growth, and survival. The loss of this response can explain the unregulated growth of transformed cells.

Non-NASA Center↗
DOE OSTI2022

Using electron channeling contrast imaging to inform and improve the growth of high-efficiency GaAs solar cells on nanopatterned GaAs substrates

Patterned substrates provide opportunities for reducing the cost of high-efficiency III-V devices by incorporating mechanically weak layers beneficial for substrate reuse (e.g. by spalling). In this work, the functionality of electron channeling contrast imaging (ECCI) as a tool to efficiently understand and mitigate defect formation is exemplified by developing a process in which high-quality III-V material can be grown on nanopatterned GaAs substrates. Reactive ion etching used in the patterning process was found to damage the GaAs substrate surface, leading to the formation of stacking faults in the epitaxial material as observed by ECCI. Etching the patterned substrates in a 1 NH4OH: 1 H2O2: 50 DI H2O solution for 10 s prior to growth removed the substrate surface damage and stacking faults were no longer present. Growth of solar cell device structures initially produced samples with many macroscale flaws creating shunts in the devices, which complicated the assessment of material quality by device measurements. However, ECCI revealed that the epitaxial material surrounding macroscale flaws was free from any crystallographic defects such as stacking faults and threading dislocations. With this knowledge, we focused on refining the patterning process to eliminate the macroscale flaws. Solar cells were then grown on the improved nanopatterned substrates and exhibited device structures with defect densities less than 5 x 105 cm -2 and average conversion efficiency of 24.8%, nearly identical to devices grown on unpatterned epi-ready substrates (25.0%).

14 SOLAR ENERGY↗
DOE OSTI2021

Comparison of water nanodroplet properties on different graphite-based substrates

The molecular structure and dynamics of water differ considerably at various interfaces. We compare the interfacial water structure–property relationship on three different carbon substrates, namely, amorphous carbon, compressed expanded natural graphite, and pure graphite by utilizing atomistic molecular dynamics simulations. The effect of different substrates on the structural and dynamical properties of water can readily be observed. Here, the density distributions parallel and normal to the substrates show oblate droplet structures. The normal to the substrate water distribution shows a strong hydration layer at the interface that does not vary with substrates. However, the disparity in the structure and dynamics on three different substrates shows that the surface morphologies of the substrates are critical for determining nanoscale water properties. Furthermore, it is observed that the formation of an interfacial water layer or the hydration layer is a direct consequence of both water “confinement” at the nanoscale and “attraction” between water molecules and the carbon substrates.

42 ENGINEERING↗
DOE OSTI2022

Superlubric-pinned transition of a two-dimensional solid dusty plasma under a periodic triangular substrate

Here, the superlubric-pinned transition in the depinning dynamics of a two-dimensional (2D) solid dusty plasma modulated by 2D triangular periodic substrates is investigated using Langevin dynamical simulations. When the lattice structure of the 2D solid dusty plasma perfectly matches the triangular substrate, two distinctive pinned and moving ordered states are observed as the external uniform driving force gradually increases from zero. When there is a mismatch between the lattice structure and the triangular substrate, however, on shallow substrates, it is discovered that all of the particles can slide freely on the substrate even when the applied driving force is tiny. This is a typical example of superlubricity, which is caused by the competition between the substrate-particle and particle-particle interactions. If the substrate depth increases further, as the driving force increases from zero, there are three dynamical states consisting of the pinned state, the disordered plastic flow state, and the moving ordered state. In an underdense system, where there are fewer particles than potential well minima, it is found that the occurrence of the three different dynamical states is controlled by the depth of the substrate, which is quantitatively characterized using the average mobility.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Peak effect and dynamics of stripe- and pattern-forming systems on a periodic one-dimensional substrate

Here we examine the ordering, pinning, and dynamics of two-dimensional pattern-forming systems interacting with a periodic one-dimensional substrate. In the absence of the substrate, particles with competing long-range repulsion and short-range attraction form anisotropic crystal, stripe, and bubble states. When the system is tuned across the stripe transition in the presence of a substrate, we find that there is a peak effect in the critical depinning force when the stripes align and become commensurate with the substrate. Under an applied drive, the anisotropic crystal and stripe states can exhibit soliton depinning and plastic flow. When the stripes depin plastically, they dynamically reorder into a moving stripe state that is perpendicular to the substrate trough direction. We also find that when the substrate spacing is smaller than the widths of the bubbles or stripes, the system forms pinned stripe states that are perpendicular to the substrate trough direction. The system exhibits multiple reentrant pinning effects as a function of increasing attraction, with the anisotropic crystal and large bubble states experiencing weak pinning but the stripe and smaller bubble states showing stronger pinning. We map out the different dynamic phases as a function of filling, the strength of the attractive interaction term, the substrate strength, and the drive, and demonstrate that the different phases produce identifiable features in the transport curves and particle orderings.

97 MATHEMATICS AND COMPUTING↗
NASA NTRS1990

Laser ablated high T(sub c) superconducting thin YBa2Cu3O(7-x) films on substrates suitable for microwave applications

The development of high temperature superconducting YBa2Cu3O(7-x) thin films on substrates suitable for microwave applications is of great interest for evaluating their applications for space radar, communication, and sensor systems. Thin films of YBa2Cu3O(7-x) were formed on SrTiO3, ZrO2, MgO, and LaAlO3 substrates by laser ablation. The wavelength used was 248 nm from a KrF excimer laser. During deposition the films were heated to 600 C in a flowing oxygen environment, and required no post annealing. The low substrate temperature during deposition with no post annealing gave films which were smooth, which had their c-axis aligned to the substrates, and which had grains ranging from 0.2 to 0.5 microns in size. The films being c-axis aligned gave excellent surface resistance at 35 GHz which was lower than that of copper at 77 K. At present, LaAlO3 substrates with a dielectric constant of 22, appears suitable as a substrate for microwave and electronic applications. The films were characterized by resistance-temperature measurements, scanning electron microscopy, and x ray diffraction. The highest critical transition temperatures (T sub c) are above 89 K for films on SrTiO3 and LaAlO3, above 88 K for ZrO2, and above 86 K for MgO. The critical current density (J sub c) of the films on SrTiO3 is above 2 x 10(exp 6) amperes/sq cm at 77 K. The T(sub c) and J(sub c) are reported as a function of laser power, composition of the substrate, and temperature of the substrate during deposition.

Warner, J. D.↗
NASA NTRS1999

Direct Numerical Simulation of Wetting and Spreading Behavior on Heterogeneous and Roughened Substrates

A method of calculation is presented that allows the simulation of the time-dependent three-dimensional motion of thin liquid layers on solid substrates for systems with finite equilibrium contact angles. The contact angle is a prescribed function of position on the substrate. Similar mathematical models are constructed for substrates with a pattern of roughness. Evolution equations are given, using the lubrication approximation, that include viscous, capillary and disjoining forces. Motion to and from dry substrate regions is made possible by use of a thin energetically-stable wetting layer. We simulate motion on heterogeneous substrates with periodic arrays of high contact-angle patches. Two different problems are treated for heterogenous substrates. The first is spontaneous motion driven only by wetting forces. If the contact-angle difference is sufficiently high, the droplet can find several different stable positions, depending on the previous history of the motion. A second simulation treats a forced cyclical motion. Energy dissipation per cycle for a heterogeneous substrate is found to be larger than for a uniform substrate with the same total energy. The Landau-Levich solution for plate removal from a liquid bath is extended to account for a pattern of roughness on the plate.

Schwartz, Leonard W.↗
NASA NTRS2004

RFID and Memory Devices Fabricated Integrally on Substrates

Electronic identification devices containing radio-frequency identification (RFID) circuits and antennas would be fabricated integrally with the objects to be identified, according to a proposal. That is to say, the objects to be identified would serve as substrates for the deposition and patterning of the materials of the devices used to identify them, and each identification device would be bonded to the identified object at the molecular level. Vacuum arc vapor deposition (VAVD) is the NASA derived process for depositing layers of material on the substrate. This proposal stands in contrast to the current practice of fabricating RFID and/or memory devices as wafer-based, self-contained integrated-circuit chips that are subsequently embedded in or attached to plastic cards to make smart account-information cards and identification badges. If one relies on such a chip to store data on the history of an object to be tracked and the chip falls off or out of the object, then one loses both the historical data and the means to track the object and verify its identity electronically. Also, in contrast is the manufacturing philosophy in use today to make many memory devices. Today s methods involve many subtractive processes such as etching. This proposal only uses additive methods, building RFID and memory devices from the substrate up in thin layers. VAVD is capable of spraying silicon, copper, and other materials commonly used in electronic devices. The VAVD process sprays most metals and some ceramics. The material being sprayed has a very strong bond with the substrate, whether that substrate is metal, ceramic, or even wood, rock, glass, PVC, or paper. An object to be tagged with an identification device according to the proposal must be compatible with a vacuum deposition process. Temperature is seldom an issue as the substrate rarely reaches 150 F (66 C) during the deposition process. A portion of the surface of the object would be designated as a substrate for the deposition of the device. By use of a vacuum arc vapor deposition apparatus, a thin electrically insulating film would first be deposited on the substrate. Subsequent layers of materials would then be deposited and patterned by use of known integrated-circuit fabrication techniques. The total thickness of the deposited layers could be much less than the 100- m thickness of the thinnest state-of-the-art self-contained microchips. Such a thin deposit could be readily concealed by simply painting over it. Both large vacuum chambers for production runs and portable hand-held devices for in situ applications are available.

Schramm, Harry F.↗
NASA NTRS2016

Carbon Nanotube Patterning on a Metal Substrate

A CNT electron source, a method of manufacturing a CNT electron source, and a solar cell utilizing a CNT patterned sculptured substrate are disclosed. Embodiments utilize a metal substrate which enables CNTs to be grown directly from the substrate. An inhibitor may be applied to the metal substrate to inhibit growth of CNTs from the metal substrate. The inhibitor may be precisely applied to the metal substrate in any pattern, thereby enabling the positioning of the CNT groupings to be more precisely controlled. The surface roughness of the metal substrate may be varied to control the density of the CNTs within each CNT grouping. Further, an absorber layer and an acceptor layer may be applied to the CNT electron source to form a solar cell, where a voltage potential may be generated between the acceptor layer and the metal substrate in response to sunlight exposure.

Nguyen, Cattien V.↗
DOE OSTI2022

Bicontinuous substrates with reduced pore restriction for CO 2 -selective composite membranes

A substrate with bicontinuous structure is attractive for thin-film composite (TFC) membrane synthesis due to its high surface porosity and well-interconnected bulk morphology. In this study, the vapor-induced phase separation (VIPS) of the casting solution comprising water, 2-pyrrolidone, and polyethersulfone (PES) was studied. By tuning the water addition in the casting solution and water vapor exposure time, the optimized substrate exhibited a bicontinuous surface with a high porosity of 24.2% (or 216/µm 2 pore density), thereby mitigating pore restriction and showing a high CO 2 permeance of 2.94×10 5 GPU. Compared to the benchmark PES substrate with cellular surface pores and lower gas permeance, the use of the bicontinuous substrate led to a 12% increase in the CO 2 permeance of the TFC membrane. The mitigated pore restriction was further rationalized by a resistance-in-series model. The analysis of the lateral diffusion and substrate resistances indicates that an even higher surface pore density of the substrate is required to fully realize the potential of ultra-permeable, CO 2 -selective polymers in the TFC configuration. As a result, the scalability of the VIPS process was demonstrated by the roll-to-roll fabrication of the optimized bicontinuous substrate with a width of 21" and a length of >100'.

42 ENGINEERING↗
DOE OSTI2025

Ultrathin VO 2 Films on Functional Substrates

The metal–insulator transition (MIT) in vanadium dioxide (VO 2 ) thin films is strongly affected by grain size, thickness, and interfacial properties. Typically, a minimum thickness around 50 nm is required for VO 2 to exhibit a significant MIT when functional substrates like sapphire and silicon are used. Several works have shown that thin films below 20 nm, with up to 2–3 decades of change in the resistance across the MIT, can be achieved but require complex pre- or postprocessing of the samples. We show that predeposition substrate condition control facilitates the direct growth of VO 2 ultrathin 15 nm films, exhibiting a resistance change between 3 and 4 decades across the MIT. Our findings indicate that the interface between the film and the substrate is crucial in determining the initial growth layers and the structural evolution. With appropriate substrate surface treatment, the desired VO 2 MIT can be enhanced regardless of the substrate crystallographic orientation. Moreover, we propose a novel approach to obtain large resistance changes across the MIT in ultrathin VO 2 films by incorporating a predeposited 1.5 nm vanadium oxide buffer layer, thereby eliminating the need to use different materials or complex pre- or postprocessing of the samples. Here we also demonstrate that this method improves the transition of 25–50 nm VO 2 thin films on silicon substrates. Our study reveals a simple approach for direct growth of ultrathin VO 2 films exhibiting a significant MIT, which is commonly accepted unattainable over substrates of technological importance, such as sapphire and silicon.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Direct Synthesis of Layer-Tunable and Transfer-Free Graphene on Device-Compatible Substrates Using Ion Implantation Toward Versatile Applications

Direct synthesis of layer-tunable and transfer-free graphene on technologically important substrates is highly valued for various electronics and device applications. State of the art in the field is currently a two-step process: a high-quality graphene layer synthesis on metal substrate through chemical vapor deposition (CVD) followed by delicate layer transfer onto device-relevant substrates. Here, we report a novel synthesis approach combining ion implantation for a precise graphene layer control and dual-metal smart Janus substrate for a diffusion-limiting graphene formation to directly synthesize large area, high quality, and layer-tunable graphene films on arbitrary substrates without the post-synthesis layer transfer process. Carbon (C) ion implantation was performed on Cu–Ni film deposited on a variety of device-relevant substrates. A well-controlled number of layers of graphene, primarily monolayer and bilayer, is precisely controlled by the equivalent fluence of the implanted C-atoms (1 monolayer ~4 × 10 15 C-atoms/cm 2 ). Upon thermal annealing to promote Cu-Ni alloying, the pre-implanted C-atoms in the Ni layer are pushed toward the Ni/substrate interface by the top Cu layer due to the poor C-solubility in Cu. As a result, the expelled C-atoms precipitate into a graphene structure at the interface facilitated by the Cu-like alloy catalysis. After removing the alloyed Cu-like surface layer, the layer-tunable graphene on the desired substrate is directly realized. The layer-selectivity, high quality, and uniformity of the graphene films are not only confirmed with detailed characterizations using a suite of surface analysis techniques but more importantly are successfully demonstrated by the excellent properties and performance of several devices directly fabricated from these graphene films. Molecular dynamics (MD) simulations using the reactive force field (ReaxFF) were performed to elucidate the graphene formation mechanisms in this novel synthesis approach. With the wide use of ion implantation technology in the microelectronics industry, this novel graphene synthesis approach with precise layer-tunability and transfer-free processing has the promise to advance efficient graphene-device manufacturing and expedite their versatile applications in many fields.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Sequence specificity analysis of the SETD2 protein lysine methyltransferase and discovery of a SETD2 super-substrate

SETD2 catalyzes methylation at lysine 36 of histone H3 and it has many disease connections. We investigated the substrate sequence specificity of SETD2 and identified nine additional peptide and one protein (FBN1) substrates. Our data showed that SETD2 strongly prefers amino acids different from those in the H3K36 sequence at several positions of its specificity profile. Based on this, we designed an optimized super-substrate containing four amino acid exchanges and show by quantitative methylation assays with SETD2 that the super-substrate peptide is methylated about 290-fold more efficiently than the H3K36 peptide. Protein methylation studies confirmed very strong SETD2 methylation of the super-substrate in vitro and in cells. We solved the structure of SETD2 with bound super-substrate peptide containing a target lysine to methionine mutation, which revealed better interactions involving three of the substituted residues. Our data illustrate that substrate sequence design can strongly increase the activity of protein lysine methyltransferases.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Pseudouridine synthase 7 is an opportunistic enzyme that binds and modifies substrates with diverse sequences and structures

Pseudouridine (Ψ) is a ubiquitous RNA modification incorporated by pseudouridine synthase (Pus) enzymes into hundreds of noncoding and protein-coding RNA substrates. Here, in this study, we determined the contributions of substrate structure and protein sequence to binding and catalysis by pseudouridine synthase 7 (Pus7), one of the principal messenger RNA (mRNA) modifying enzymes. Pus7 is distinct among the eukaryotic Pus proteins because it modifies a wider variety of substrates and shares limited homology with other Pus family members. We solved the crystal structure of Saccharomyces cerevisiae Pus7, detailing the architecture of the eukaryotic-specific insertions thought to be responsible for the expanded substrate scope of Pus7. Additionally, we identified an insertion domain in the protein that fine-tunes Pus7 activity both in vitro and in cells. These data demonstrate that Pus7 preferentially binds substrates possessing the previously identified UGUAR (R = purine) consensus sequence and that RNA secondary structure is not a strong requirement for Pus7-binding. In contrast, the rate constants and extent of Ψ incorporation are more influenced by RNA structure, with Pus7 modifying UGUAR sequences in less-structured contexts more efficiently both in vitro and in cells. Although less-structured substrates were preferred, Pus7 fully modified every transfer RNA, mRNA, and nonnatural RNA containing the consensus recognition sequence that we tested. Our findings suggest that Pus7 is a promiscuous enzyme and lead us to propose that factors beyond inherent enzyme properties (e.g., enzyme localization, RNA structure, and competition with other RNA-binding proteins) largely dictate Pus7 substrate selection.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2021

Planarization of Rough (100) GaAs Substrates via Growth by Hydride Vapor Phase Epitaxy

Wafer reuse techniques help offset the cost of III-V growth substrates by using a single wafer for multiple growths, but costly re-polishing after device removal limits the end benefit. In this work, we present planarization growth by hydride vapor-phase epitaxy (HVPE), a potentially low-cost growth technique, as a method of smoothing rough substrates for subsequent high-quality device growth without the need for polishing. First, we show there is a threshold for allowable substrate roughness without device degradation by comparing devices grown by organometallic vapor-phase epitaxy (OMVPE) on epi-ready polished and pre-polished substrates that did not have the final epi-ready polish. We then demonstrate successful smoothing with HVPE growth on substrates with different surface morphologies, with features ranging from general roughness to large facets. Initial devices grown by HVPE on a pre-polished substate showed no degradation compared to a control wafer, indicating that planarizing rough substrates through HVPE growth is a promising path toward being able to use rough substrates directly for growth, without costly polishing steps.

GaAs↗
DOE OSTI2020

Design, Analysis, Comparison, and Experimental Validation of Insulated Metal Substrates for High-Power Wide-Bandgap Power Modules

Direct bonded copper (DBC) substrates used in power modules have limited heat spreading and manufacturing capability due to ceramic properties and manufacturing technology. The ceramic and copper bonding is also subject to high mechanical stress due to coefficient of thermal expansion mismatch between the copper and the ceramic. For wide-bandgap (WBG) devices, it is of interest exploring new substrate technologies that can overcome some of the challenges of direct bonded copper substrates. In this technical paper, the design, analysis, and comparison of insulated metal substrates (IMSs) for high-power wide-bandgap semiconductor-based power modules are discussed. This paper starts with technical description and discussion of state-of-the-art DBC substrates with different ceramic insulators such as aluminum nitride (AlN), Al 2 O 3 , and Si 3 N 4 . Next, an introduction of IMSs and their material properties, and a design approach for SiC (silicon carbide) metal-oxide-semiconductor field-effect transistor (MOSFET)-based power modules for high-power applications is provided. The influence of dielectric thickness on the power handling capability of the substrate are also discussed. The designed IMS and DBC substrates were characterized in terms of steady-state and transient thermal performance using finite element simulation. Finally, the performance of the IMS and DBC are validated in an experimental setup under different loading and cooling temperature conditions. We report the simulation and experimental results showed that the IMS can provide high steady-state thermal performance for high-power modules based on SiC MOSFETs. Furthermore, the IMS provided enhanced transient thermal performance, which provided a reduced junction temperature when the module is operated at low fundamental output frequencies in traction drive systems.

42 ENGINEERING↗
DOE OSTI2022

III-V Solar Cells with Novel Epitaxial Lift-off Architectures for Extended Substrate Reuse for Low-cost Manufacturing

The highest solar cell efficiencies have been achieved with III-V photovoltaics (PV). Still, the use of III-V materials in terrestrial applications has been very limited, mainly because of their high cost. The high cost is primarily due to the expensive Ge or GaAs wafers which could amount up to one-half of the total module cost! A prominent approach to reduce the impact of the high cost of substrates used for III-V PV is through re-use of the wafer substrates by Epitaxial Lift-Off (ELO). Typically, using a sacrificial layer such as AlAs, the device part of the cell is lifted off, leaving behind the substrate for re-use for fabrication of the next device. While conversion efficiency as high as 29.1% has been achieved by ELO method, chemical mechanical polishing (CMP) of the substrate is required which significantly adds to the overall solar cell cost. In this project, we have developed a novel ELO architecture for single junction gallium arsenide (GaAs) solar cells that will not require CMP of the substrate for re-use. Multiple reuses of GaAs wafers have been demonstrated with no CMP, without degradation in solar cell efficiency. Also, the solar cells have been successfully lifted off and transferred to inexpensive substrates with less than 2% change in efficiency. By elimination of the CMP process, which is the highest cost component of III-V solar cells made by conventional ELO method (~$10/W), and decreasing the substrate cost by multiple re-uses, the developed technology could be a leap forward in significantly reducing the cost of III-V photovoltaics.

14 SOLAR ENERGY↗
DOE OSTI2023

Thermal Spray toolpath development for a capped cylinder (“cake pan”) substrate

A near net shape coating is desired to be applied to the outer surface of a capped cylinder (“cake pan”) type substrate using thermal spray technology. A capped cylinder geometry is more complex than simple coupon-level substrate substrates (e.g., flat panels, cylinders) and thus requires a more complex toolpath to deposit a uniform coating. This report documents a practical theoretical approach to calculating relative torch-to-substrate speeds for coating the cylindrical, corner, and cap region of a rotating capped cylinder based on fundamental thermal spray toolpath principles. A preliminary experimental test deposited a thermal spray coating onto a mock substrate using toolpath speeds calculated by the theoretical approach proposed. The mock substrate was metallographically inspected to assess coating uniformity across the cylindrical, corner, and cap region. Inspection of the mock substrate revealed qualitatively uniform coating microstructure and thickness where theoretically predicted, demonstrating the viability of the proposed toolpath method and associated calculations. Pathways forward to optimizing coating uniformity at the cap center are proposed as near term suggested future work.

42 ENGINEERING↗