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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Controlling Valley-Specific Light Emission from Monolayer MoS 2 with Achiral Dielectric Metasurfaces

Excitons in two-dimensional transition metal dichalcogenides have a valley degree of freedom that can be optically manipulated for quantum information processing. Here, we integrate MoS 2 monolayers with achiral silicon disk array metasurfaces to enhance and control valley-specific absorption and emission. Through the coupling to the metasurface electric and magnetic Mie modes, the intensity and lifetime of the emission of neutral excitons, trions, and defect bound excitons can be enhanced and shortened, respectively, while the spectral shape can be modified. Additionally, the degree of polarization (DOP) of exciton and trion emission from the valley can be symmetrically enhanced at 100 K. The DOP increase is attributed to both the metasurface-enhanced chiral absorption of light and the metasurface-enhanced exciton emission from the Purcell effect. Finally, combining Si-compatible photonic design with large-scale 2D materials integration, our work makes an important step toward on-chip valleytronic applications approaching room-temperature operation.

2D materials↗
DOE OSTI2021

Ultradoping Boron on Si(100) via Solvothermal Chemistry

Ultradoping introduces unprecedented dopant levels into Si, which transforms its electronic behavior and enables its use as a next-generation electronic material. Commercialization of ultradoping is currently limited by gas-phase ultra-high vacuum requirements. Solvothermal chemistry is amenable to scale-up. However, an integral part of ultradoping is a direct chemical bond between dopants and Si, and solvothermal dopant-Si surface reactions are not well-developed. This work provides the first quantified demonstration of achieving ultradoping concentrations of boron (~1e14 cm 2 ) by using a solvothermal process. Surface characterizations indicate the catalyst cross-reacted, which led to multiple surface products and caused ambiguity in experimental confirmation of direct surface attachment. Density functional theory computations elucidate that the reaction results in direct B-Si surface bonds. Finally, this proof-of-principle work lays groundwork for emerging solvothermal ultradoping processes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Radiation-Induced Error Mitigation by Read-Retry Technique for MLC 3-D NAND Flash Memory

Here, we have evaluated the Read-Retry (RR) functionality of the 3-D NAND chip of multilevel-cell (MLC) configuration after total ionization dose (TID) exposure. The RR function is typically offered in the high-density state-of-the-art NAND memory chips to recover data once the default memory read method fails to correct data with error correction codes (ECCs). In this work, we have applied the RR method on the irradiated 3-D NAND chip that was exposed with a Co-60 gamma-ray source for TID up to 50 krad (Si). Based on our experimental evaluation results, we have proposed an algorithm to efficiently implement the RR method to extend the radiation tolerance of the NAND memory chip. Our experimental evaluation shows that the RR method coupled with ECC can ensure data integrity of MLC 3-D NAND for TID up to 50 krad (Si).

3-D NAND↗
DOE OSTI2023

The Effects of Gamma Ray Integrated Dose on a Commercial 65-nm SRAM Device

Here this work shows that the static random access memory (SRAM) error rate for a commercial 65-nm device in a dose rate environment can be highly dependent upon the integrated dose (dose rate × pulse duration). While the typical metric for such testing is dose rate upset (DRU) level in rad(Si)/s, a series of dose rate experiments at Little Mountain Test Facility (LMTF) shows dependence on the integrated dose. The error rate is also found to be dependent on the core voltage, and the preradiation value of the bits. We believe that these effects are explained by a well charge depletion caused by gamma ray photocurrent.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Cr-doped U 3 Si 2 composite fuels under steam corrosion

Dense Cr-doped U 3 Si 2 composite fuels were manufactured by spark plasma sintering, and the effects of Cr addition on mechanical properties and oxidation resistance were investigated. Furthermore, dynamic oxidation testing by thermogravimetric analysis revealed significantly improved oxidation resistance of U 3 Si 2 with minimal doping of 3 wt% Cr. The onset oxidation temperature increased to above 550 °C in air and ~520 °C in steam conditions for the 5 wt% and 10 wt% Cr-doped composites. Steam corrosion testing under 360 °C for 24 hours indicated well-maintained pellet integrity without pulverization for the 10 wt% Cr-doped U 3 Si 2 pellet which only showed minor surface oxidation. The first promising results open up the possibility of designing and manufacturing metal additive-doped U 3 Si 2 composite fuels with significantly-improved corrosion resistance as a potential candidate for accident tolerant fuels.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2024

Traceability of Surface Longwave Irradiance Measurements to SI Using the IRIS Radiometers

The traceability of the World Infrared Standard Group of Pyrgeometers (WISG) was established through the comparison to several independently calibrated radiometers (Infrared Integrating Sphere Radiometer (IRIS), Absolute Cavity Pyrgeometer (ACP), Atmospheric Emittance Radiance Interferometer (AERI)). The traceability of the longwave irradiance measurements to SI was validated by a comparison of two independently characterized blackbody cavities.

ACR↗
DOE OSTI2023

Photochemical Diodes for Simultaneous Bias-Free Glycerol Valorization and Hydrogen Evolution

Artificial photosynthesis offers a route to producing clean fuel energy. However, the large thermodynamic requirement for water splitting along with the corresponding sluggish kinetics for the oxygen evolution reaction (OER) limits its current practical application. Here, we offer an alternative approach by replacing the OER with the glycerol oxidation reaction (GOR) for value-added chemicals. By using a Si photoanode, a low GOR onset potential of -0.05 V vs RHE and a photocurrent density of 10 mA/cm 2 at 0.5 V vs RHE can be reached. Coupled with a Si nanowire photocathode for the hydrogen evolution reaction (HER), the integrated system yields a high photocurrent density of 6 mA/cm 2 with no applied bias under 1 sun illumination and can run for over 4 days under diurnal illumination. In conclusion, the demonstration of the GOR-HER integrated system provides a framework for designing bias-free photoelectrochemical devices at appreciable currents and establishes a facile approach to artificial photosynthesis.

09 BIOMASS FUELS↗
DOE OSTI2019

Infrared absorption cross section of SiN x thin films

At the molecular level, resonant coupling of infrared radiation with oscillations of the electric dipole moment determines the absorption cross section, $σ$. The parameter σ relates the bond density to the total integrated absorption. In this work, $σ$ was measured for the Si–N asymmetric stretch mode in SiN x thin films of varying composition and thickness. Thin films were deposited by low pressure chemical vapor deposition at 850 °C from mixtures of dichlorosilane and ammonia. σ for each film was determined from Fourier transform infrared spectroscopy and ellipsometric measurements. Increasing the silicon content from 0% to 25% volume fraction amorphous silicon led to increased optical absorption and a corresponding systematic increase in σ from 4.77 × 10 –20 to 6.95 × 10 –20 cm 2 , which is consistent with literature values. The authors believe that this trend is related to charge transfer induced structural changes in the basal SiN x tetrahedron as the volume fraction of amorphous silicon increases. Furthermore, experimental $σ$ values were used to calculate the effective dipole oscillating charge, q, for four films of varying composition. The authors find that q increases with increasing amorphous silicon content, indicating that compositional factors contribute to modulation of the Si–N dipole moment. Additionally, in the composition range investigated, the authors found that $σ$ agrees favorably with trends observed in films deposited by plasma enhanced chemical vapor deposition.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Coherent Wavelength Switched Co-Packaged Optics to Disrupt Datacenters/HPC (AKA "QRock") (Final Report)

This project resulted in multiple first-of-a-kind demonstrations, including two generations of transmitters, a receiver, and a complete coherent link. The transmitter architecture, based on EAMs to generate QPSK modulation was first demonstrated in InP, which has limitations for scaling up to chips with multiple channels for full WDM architectures, and implementing the densities and level of integration needed to implement co-packaging with electronics. Our work resulted in the first demonstration of this architecture on a Si platform compatible with copackaging, and our working prototypes illustrated the potential of the approach. The link demonstration was also the first coherent optical link realized in a multi-micron waveguide platform. For the transmitters, integrating efficient III-V EAM devices into the large waveguide Si platform simultaneously enables significant reduction in driver power consumption while minimizing optical losses in routing and fiber coupling. On the receiver side, optical coupling and propagation losses are also minimized in the multi-micron platform, reducing required laser optical power which improves link energy efficiency. The measurement results presented in the final report demonstrate that we achieved the speed objectives for the program (112Gb/s: 56Gbaud QPSK), albeit at a higher BER than targeted. The report provides assessments of the low-powercoherent link architecture and associated components developed under the program from both technological and commercial viewpoints.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2025

Demonstration of Vertical 2T-nC FeRAM Hybrid Cell and Its Scalability for High-Density 3-D Ferroelectric Capacitor Memory

In this work, we present a comprehensive experimental and modeling study on the scaling of vertical 2T-nC ferroelectric random access memory (FeRAM) hybrid cells, comprising n metal-ferroelectric–metal (MFM) capacitors, to demonstrate a high-performance and high-density 3-D capacitor memory. Our contributions include: 1) successful process integration of vertical 2T-3C FeRAM cells by stacking MFM structures on top of Si CMOS transistors; 2) experimental validation of memory cell functionality, confirming the feasibility of the vertical 2T-nC FeRAM architecture; 3) an analysis of scaling effects on parasitic capacitance in densely integrated 3-D arrays, using 3-D technology computer-aided design (TCAD) simulations; 4) exploration of aggressive stacking of write bitlines (WBLs) to enhance memory density, where ferroelectric linear capacitance ( C FE ) enables self-boosted inhibition under the V W /2 scheme, but renders the V W /3 scheme ineffective due to intolerable write disturbances; and 5) assessment of horizontal scaling, revealing significant increases in read disturbances caused by interplane capacitance between adjacent WBLs ( C Z ). This work represents an early exploration into the potential of 2T-nC FeRAM as a scalable and efficient 3-D memory solution.

42 ENGINEERING↗
DOE OSTI2026

Thermal cycling-driven microstructural changes of eutectic Al–Si phase change materials in SS304 containers revealed by multi-modal imaging

Aluminum-based Al–Si alloys are widely used as phase change materials (PCMs) in thermal energy storage (TES) systems owing to their high volumetric latent heat and superior thermal conductivity. However, their long-term reliability is limited by degradation processes that remain insufficiently understood. In this work, we employ a multimodal, correlative characterization framework to systematically resolve the degradation behavior of eutectic Al–Si PCMs in contact with SS304 containers under repeated thermal cycling. By integrating high-resolution electron microscopy, three-dimensional X-ray fluorescence (3D XRF) imaging, and differential scanning calorimetry (DSC), we directly link spatially resolved compositional and microstructural evolution to changes in thermophysical properties. The correlative analysis reveals that elemental leaching of Fe, Cr, and Ni from the stainless-steel container into the PCM drives the formation of intermetallic compounds (IMCs) both at the interface and within the bulk PCM, leading to pronounced compositional heterogeneity. These interfacial reactions and diffusion-induced transformations progressively destabilize the Al–Si eutectic, reducing the effective phase-transforming fraction. Consistent with these observations, DSC measurements show a decrease in melting temperature and latent heat of fusion with thermal cycling. These results underscore the critical influence of interfacial reactions and material compatibility on the stability, durability, and overall performance of Al–Si-based TES systems.

25 ENERGY STORAGE↗
DOE OSTI2020

A Coupled Experimental and Simulation Approach to Investigate the Impact of Grain Growth, Amorphization, and Grain Subdivision in Accident Tolerant U 3 Si 2 Light Water Reactor Fuel

Triuranium disilicide (U 3 Si 2 ) is being considered as an alternative accident tolerant fuel (ATF) due to its higher thermal conductivity. However, there is uncertainty in its use due to a lack of irradiation data at light water reactor (LWR) conditions. In this project, we used an integrated experimental and simulation approach to answer two significant questions pertaining to U 3 Si 2 that were not investigated by the Fuel Cycle Research and Development (FCRD) and Nuclear Energy Advanced Modeling and Simulation (NEAMS) programs: (1) Will grain growth in the hotter portions of the fuel significantly impact U 3 Si 2 LWR fuel behavior? (2) Under what conditions do grain subdivision and amorphization occur in U 3 Si 2 and will either occur at LWR conditions? Our approach to answer these questions used in situ ion irradiation and annealing to investigate grain growth, grain subdivision, and amorphization, along with mesoscale simulations using the MARMOT tool. We found that while the grain boundary mobility of U 3 Si 2 is larger than that of UO 2 , grain growth in U 3 Si 2 fuel pellets will be less than in UO 2 and may be neglected due to the lower thermal conductivity and thus lower centerline temperature. We also found that amorphization will not occur in U 3 Si 2 above 600 K, such that it is not likely to occur at typical LWR operating conditions. Grain subdivision will occur at LWR conditions and will likely occur at lower burnups than in UO 2 .

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2020

Polymeric Electron-Selective Contact for Crystalline Silicon Solar Cells with an Efficiency Exceeding 19%

Carrier-selective contacts have become a prominent path forward toward efficient crystalline silicon (c-Si) photovoltaics. Among the proposed contacting materials, organic materials may offer simplified and low-cost processing compared with typical vacuum deposition techniques. In this paper, branched polyethylenimine (b-PEI) is presented as an electron-transport layer (ETL) for c-Si solar cells. The incorporation of a b-PEI interlayer between c-Si(n) and Al leads to a low contact resistivity of 24 mΩ cm 2 . A silicon heterojunction solar cell integrated with b-PEI is demonstrated achieving a power conversion efficiency of 19.4%, which improves the benchmark efficiency of a c-Si solar cell with an organic ETL. This electron selectivity of b-PEI is attributed to its Lewis basicity, i.e., electron-donating ability, promoting favorable band bending at the c-Si surface for electron transport. Moreover, several other Lewis base polymers perform as efficient ETLs in organic/c-Si hybrid devices, indicating Lewis basicity could be a guideline for future organic ETL design.

14 SOLAR ENERGY↗
DOE OSTI2025

Multiscale electro-chemo-mechanical model of high-capacity amorphous silicon anode material in sodium-ion batteries

The growing interest in sodium-ion batteries (SIBs) is fueled by their abundant resources and environmentally friendly nature, with amorphous silicon (a-Si) emerging as a promising anode material for enhancing capacity. However, the key challenge lies in sustaining reversible capacity during cycling. Here, in this work, we developed a multiscale electrochemical model incorporating an a-Si anode to elucidate the performance parameters of SIBs. Additionally, we integrated an electro-chemo-mechanical model at the particle level to capture stress generation, an essential factor in the degradation of high-capacity electrodes. Unlike existing models, our approach accounts for large-deformation chemo-mechanics at the particle scale and includes simulations under varying charge rates to explore multiscale behavior. The results reveal that coupled sodiation significantly prolongs complete cycling times and influences discharge dynamics, indicating that neglecting this coupling leads to an underestimation of actual capacity. Furthermore, we observed pronounced polarization effects at higher charge rates, resulting in heterogeneous stress distributions across the anode. With the identification of critical failure parameters for both active particles and binder materials, offering novel insights for mitigating degradation in high-capacity electrode systems.

Amorphous silicon anode↗
DOE OSTI2025

From prediction to experimental realization of ferroelectric wurtzite Al1− x Gd x N alloys

AlN-based alloys find widespread application in high-power microelectronics, optoelectronics, and electromechanics. The realization of ferroelectricity in wurtzite AlN-based heterostructural alloys has opened up the possibility of directly integrating ferroelectrics with conventional microelectronics based on tetrahedral semiconductors, such as Si, SiC, and III–Vs, enabling compute-in-memory architectures, high-density data storage, and more. The discovery of AlN-based wurtzite ferroelectrics has been driven to date by chemical intuition and empirical explorations. Here, we demonstrate the computationally-guided discovery and experimental demonstration of new ferroelectric wurtzite Al1−xGdxN alloys. First-principles calculations indicate that the minimum energy pathway for switching changes from a collective to an individual switching process with a lower overall energy barrier, at a rare-earth fraction x with x > 0.10–0.15. Experimentally, ferroelectric switching is observed at room temperature in Al1−xGdxN films with x > 0.12, which strongly supports the switching mechanisms in wurtzite ferroelectrics proposed previously [Lee et al., Sci. Adv. 10, eadl0848 (2024)]. This is also the first demonstration of ferroelectricity in an AlN-based alloy with a magnetic rare-earth element, which could pave the way for additional functionalities such as multiferroicity and opto-ferroelectricity in this exciting class of AlN-based materials.

36 MATERIALS SCIENCE↗
DOE OSTI2023

CMOS-Compatible Ultrathin Superconducting NbN Thin Films Deposited by Reactive Ion Sputtering on 300 mm Si Wafer

We report a milestone in achieving large-scale, ultrathin (~5 nm) superconducting NbN thin films on 300 mm Si wafers using a high-volume manufacturing (HVM) industrial physical vapor deposition (PVD) system. The NbN thin films possess remarkable structural uniformity and consistently high superconducting quality across the entire 300 mm Si wafer, by incorporating an AlN buffer layer. High-resolution X-ray diffraction and transmission electron microscopy analyses unveiled enhanced crystallinity of (111)-oriented δ-phase NbN with the AlN buffer layer. Notably, NbN films deposited on AlN-buffered Si substrates exhibited a significantly elevated superconducting critical temperature (~2 K higher for the 10 nm NbN) and a higher upper critical magnetic field or H c2 (34.06 T boost in H c2 for the 50 nm NbN) in comparison with those without AlN. These findings present a promising pathway for the integration of quantum-grade superconducting NbN films with the existing 300 mm CMOS Si platform for quantum information applications.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Ultrathin silicon oxide prepared by in-line plasma-assisted N 2 O oxidation (PANO) and the application for n-type polysilicon passivated contact

We develop a plasma-assisted nitrous-oxide (N 2 O) gas oxidation (PANO) method to prepare the ultrathin silicon oxide (SiO x ) for polysilicon (poly-Si) passivated contact. The effects of preparation conditions, including the substrate temperature, processing time, and plasma power, are studied. Afterwards, we integrate the PANO SiO x into the polysilicon passivated contact and optimize the passivation and contact performances. Excellent surface passivation with the n-type poly-Si and PANO SiO x on the n-type c-Si wafer is achieved by 880 °C annealing, which shows competitive passivation quality to the one with NASO SiO x . Champion implied open-circuit voltage (iV oc ) and single-sided recombination saturated current (J 0 ) reach 730 mV and 4.3 fA/cm 2 after crystallization; and they are further improved to 747 mV and 2.0 fA/cm 2 (3 × 10 15 cm -3 ) after subsequent AlO x /SiN x hydrogenation. Using transmission electron microscopy (TEM), we find that the thickness of PANO SiO x ranges 1.1–2.4 nm and the controlled nitric acid oxidized SiO x (NAOS) ranges 1.3–1.8 nm. The contact resistivity (ρ c ) is typically <10 mΩ cm 2 with the annealing temperature of >820 °C. Also, the crystallinity, phosphorous in-diffusion profile, and current-leaking density of the passivated contacts are investigated. In general, the PANO SiO x and in-situ doping amorphous silicon precursor can be fabricated in one PECVD system without additional equipment or transfer procedures, which is favorable for the high-efficiency, low-cost industrial manufacture.

14 SOLAR ENERGY↗
DOE OSTI2020

High-pressure structural behavior and elastic properties of U3Si5: A combined synchrotron XRD and DFT study

We present an integrated experimental and theoretical study of the structural behavior of U 3 Si 5 at highpressure conditions using angle-dispersive synchrotron X-ray diffraction (XRD) in a diamond anvil cell (DAC) and density functional theory (DFT) calculations. On increasing pressure, the ambient hexagonal structure of U 3 Si 5 with space group P6/mmm remains stable up to 16.7 GPa, the maximum pressure tested with DAC. The bulk modulus and the a- and c-axial moduli of U 3 Si 5 were experimentally determined to be 126 ± 4 GPa, 173 ± 8 GPa and 79.7 ± 4.3 GPa, respectively. Thus an anisotropy in the axial compressibility of U 3 Si 5 is observed with its c-axis being more compressible than the a-axis. Our DFT calculation results are in general agreement with the experimental values, including reproducing the compressibility anisotropy. A comparison of the bulk modulus of U 3 Si 5 to those of other U-Si compounds reveals a general trend that the bulk modulus of U-Si decreases with increasing U/(U+Si) ratio.

36 MATERIALS SCIENCE↗