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Bidirectional switches are essential for cycloconverter and matrix converter applications to facilitate single-stage AC-AC conversion without intermediate energy storage elements. The 1.2 kV 4H-SiC BiDFET was developed as the first monolithic bidirectional SiC power transistor. This paper describes the design considerations taken into account while creating the BiDFET device and developing custom packages for housing the switch in discrete form for low power applications and in module form for high-power applications. The realized switches are characterized for their on-state and switching performance. The versatility of the BiDFET device is demonstrated by operating a single BiDFET H-bridge in voltage-source-inverter and current-source-inverter topologies only by varying the gate bias on the individual BiDFETs and reversing the input-output connections.
This project, led by the small business NextWatt LLC, led to the design and development of a novel high-frequency-link (HFL) transformer that yields reduce number of semiconductor devices compared to conventional solid-state transformers (SSTs). The HFL transformer is based on SiC device technology and nanocrystalline-core-based magnetics techniology. The control actuation of the SiC devices are algorithmically implemented in digital signal processor (DSP) platform. The overall HFL transformer technology is conceived and developed using a modular approach. During the course of the project the novel technology and its experimental performances at the module, multi-phase, and cascaded multi-phase levels have been demonstrated to the sponsor U.S. Department of Energy (DOE).
This paper reports on the development of key components required for a self-powered oscillator unit designed to wirelessly transmit its signal under full insertion in high-temperature (HT) harsh-environments (HE), such as those present in power plants and industrial settings (metallurgic, oil extraction, molding, and aerospace). The oscillator employed a silicon carbide (SiC) power transistor and HT passive components on a screen-printed alumina circuit board capable of operation beyond 300 °C. The HT oscillator circuit was powered solely by in-situ energy scavenging thermoelectric generator (TEG) modules using passive cooling, eliminating the need for an external power supply or active cooling. In addition, a silicon-based external booster circuit was used to achieve the required TEG voltage regulation to test the TEG-powered HT oscillator circuit. The TEG-powered oscillator circuit was tested inside a non-metallic furnace from room temperature to over 300 °C for transmission of a wireless signal, which was detected outside the furnace at 11 ft (3.4 m). Such a wireless transmitting system powered only by in-situ TEGs, with no requirement for external power or active cooling, is very attractive for flexible, mobile stand-alone control and sensor units targeted for operation in HT HE conditions found in power plants and industrial settings.
A novel 1.2 kV/10A, 4H-SiC monolithic, bidirectional switch has been developed for use in cycloconverter applications to facilitate high-frequency direct AC-to-AC power conversion and enables new power converter topologies. A new packaging solution, utilizing a 100 µm flexible polyimide organic laminate substrate is developed to mitigate thermo-mechanical stress during power cycling and enable smaller form factor and lower cost. Multiphysics simulations and static tests were conducted to show performance characterization of the module and compare it against metallic substrates. A new organic laminate epoxy resin composite dielectric (ERCD) is also evaluated for superior thermal performance and shows 63% reduction in junction to case resistance compared to DBC substrates.
This paper presents a single-stage series-resonant dual active half bridge (SR-DAHB) inverter suitable for high power applications. The topology is an isolated dual half-bridge circuit with an unfolding bridge. A combined phase-shift and frequency modulation technique is utilized to generate AC power output. In high-power applications where the switching devices operate at relatively high current and voltage, the switching loss becomes the major portion of the converter’s total loss as the devices are turned on and off under hard switching condition. The primary merit of the proposed single-stage SR-DAHB inverter with the combined phase-shift and frequency modulation control is to significantly reduce the switching loss so that it is not a function of load current. A precise and comprehensive power loss model is developed for both the SR-DAHB and DAHB to optimize the operation of the inverters. The objective of the optimization is to minimize the inverter total loss while calculating the optimum combination of frequency and phase shift. A 1.5 kV, 50 kW prototype was built to demonstrate the performance of the SRDAHB versus DAHB inverters with the combined phase-shift and frequency modulation control, and validate the theoretical analysis.
New high temperature low power 8-pin packages have been fabricated using commercial fabrication service. These packages are made of aluminum nitride and 96 percent alumina with Au metallization. The new design of these packages provides the chips inside with EM shielding. Wirebond geometry control has been achieved for precise mechanical tests. Au wirebond samples with 45 degree heel-angle have been tested using wireloop test module. The geometry control improves the consistency of measurement of the wireloop breaking point.Also reported on is a parametric study of the thermomechanical reliability of a Au thick-film based SiC die-attach assembly using nonlinear finite element analysis (FEA) was conducted to optimize the die-attach thermo-mechanical performance for operation at temperatures from room temperature to 500 degrees Centigrade. This parametric study centered on material selection, structure design and process control.
Packaging innovations are needed for medium-voltage wide bandgap power semiconductor modules to enable their adaptation in grid applications. A unique challenge for packaging medium-voltage power modules is managing the trade-off between insulation demand and heat dissipation. The focus of this work was on developing a packaging innovation that improves the module heat dissipation and offers more flexibility to its insulation design. Two strategies were explored for the packaging of an 8-kV SiC diode rectifier module:(1) double-side cooling and (2) sintered-silver bonding. Double-side cooling was realized by using short metal posts rather than long and thin wire bonds for device interconnection, forming a low-profile package with devices sandwiched between two insulated metal substrates. Sintered-silver bonding enabled the devices to function reliably at over 250 °C. Simulations of the packaged module showed a low interconnect inductance of 2.67 nH and a 50% less heat transfer coefficient required to cool the chips. Prototypes of the module were fabricated, and preliminary electrical testing results validated the package design.
This report highlights innovative SBIR 2015 Phase I projects specifically addressing areas in Communications Technology and Development which is one of six core competencies at NASA Glenn Research Center. There are fifteen technologies featured with emphasis on a wide spectrum of applications such as novel solid state lasers for space-based water vapor dial; wide temperature, high voltage and energy density capacitors for aerospace exploration; instrument for airborne measurement of carbonyl sulfide; high-power tunable seed laser for methane Lidar transmitter; ROC-rib deployable ka-band antenna for nanosatellites; a SIC-based microcontroller for high-temperature in-situ instruments and systems; improved yield, performance and reliability of high-actuator-count deformable mirrors; embedded multifunctional optical sensor system; switching electronics for space-based telescopes with advanced AO systems; integrated miniature DBR laser module for Lidar instruments; and much more. Each article in this booklet describes an innovation, technical objective, and highlights NASA commercial and industrial applications. space-based water vapor dial; wide temperature, high voltage and energy density capacitors foraerospace exploration; instrument for airborne measurement of carbonyl sulfide; high-power tunable seed laser formethane Lidar transmitter; ROC-rib deployable ka-band antenna for nanosatellites.
Vertical GaN (vGaN) technology leverages a fully conductive 3D semiconductor structure, enabling superior power density compared to GaN-on-Si and other wide bandgap devices. It offers a pathway to surpass cost and efficiency limitations of Si and SiC devices in traction applications. However, scaling for high-voltage, high-power systems remains challenging. This paper presents the design of an 800V, 200kW traction inverter utilizing vertical GaN devices. The inverter achieves ultra-high efficiency (> 99.5%) through advanced power module integration and employs multilevel neutral-point-less X-type (NPL.X) inverter topology to ensure optimal traction drive system performance. These innovations demonstrate the potential of vGaN for nextgeneration electric propulsion systems.
The Deep Space Avionics (DSA) Project is developing a Power Actuation and Switching Module (PASM). This component enables a modular and scalable design approach for power switching applications, which can result in a wide variety of power switching architectures using this simple building block. The PASM is designed to provide most of the necessary power switching functions of spacecraft for various Deep Space missions including future missions to Mars, comets, Jupiter and its moons. It is fabricated using an A SIC process that is tolerant of high radiation. The development includes two application specific integrated circuits (ASICs) and support circuitry all packaged using High Density Interconnect (HDI) technology. It can be operated in series or parallel with other PASMs, It can be used as a high-side or low-side switch and it can drive thruster valves, pyrotechnic devices such as NASA standard initiators, bus shunt resistors, and regular spacecraft component loads. Each PASM contains two independent switches with internal current limiting and over-current trip-off functions to protect the power subsystem from load faults. During turnon and turnoff each switch can limit the rate of current change (di/dt) to a value determined by the user. Threeway majority-voted On/Off commandability and full switch status telemetry (both analog and digital) are built into the module. This paper describes the development process used to design, model, fabricate, and test these compact and versatile power switches. Preliminary test results from prototype HDI PASM hardware are also discussed.
Interfacing low voltage dc to medium voltage three-phase ac grid is often based on series-stackable modular converter architectures. To minimize energy storage requirements, it is advantageous to employ a quadruple active bridge (QAB) stage operating as a "dc transformer" in each stackable module. The QAB stage offers three isolated dc link voltages, which then allow for flexible stacking of three single-phase dc-to-ac inverter stages. Each of the module phases processes a pulsating power having a component at twice the line frequency. This presents a challenge in maintaining zero voltage switching (ZVS) on the secondary sides of the QAB during low-power portions of the line cycle. This article is focused on the design of the QAB stage. A detailed analysis of ZVS switching waveforms is presented, including effects of nonlinear device capacitances. It is shown how ZVS can be achieved at all times using a relatively small circulating current provided by the magnetizing inductance of the high-frequency transformer. Analytical expressions are given for the optimal values of the magnetizing inductance and the dead times of the QAB primary and secondary bridges. This approach is verified by experimental results on a 1 kV, 10-kW SiC-based prototype, demonstrating a relatively flat efficiency curve with a peak efficiency of 97.1% at 75% load.
Phase II objectives: Develop an integrated silicon-carbide wireless sensor suite capable of in situ measurements of critical characteristics of NTP engine; Compose silicon-carbide wireless sensor suite of: Extreme-environment sensors center, Dedicated high-temperature (450 deg C) silicon-carbide electronics that provide power and signal conditioning capabilities as well as radio frequency modulation and wireless data transmission capabilities center, An onboard energy harvesting system as a power source.
This paper investigates the voltage-boost features of the emerging seven-switch current-source inverter (H7-CSI) to improve the efficiency of the CSI-based motor drive system. The switching transient and power loss model of the H7-CSI topology during voltage-boost operation are analyzed in detail. The effects of the boost function on the switching and conduction loss of the H7-CSI topology are investigated. A genetic algorithm has been introduced that makes it possible to optimize the H7-CSI’s modulation index to minimize its power loss. Experimental results for the H7-CSI unit show that this optimization can reduce the power loss by 10.6%.
The 1.2 kV 4H-SiC BiDirectional Field Effect Transistor (BiDFET) is the first monolithic SiC bidirectional switch, which offers a lower voltage drop and semiconductor devices count alternative to the reverse-voltage-blocking (RB) switch used in the current-source converters (CSC). The bidirectional switch based CSC also allows DC-link current reversal for bidirectional power flow and provides multiple system-level benefits in a buck-boost AC/DC system consisting of buck-type DC/DC converter and CSC. This paper discusses the selection of buck converter duty cycle and CSC modulation index for the system’s buck-boost operation with a wide variation in DC voltage. CSC modulation schemes categorized based on the number of hard-turn-on transitions per switching cycle are also analyzed along with the three-step and four-step commutation schemes that are essential for the CSC commutation cells. Finally, the different schemes are evaluated and compared through the experimental results of a 10 kW, 480 VRMS, LL/ (400 − 800) V AC/DC system.
—The switching performance of large area (1cm x 1cm) monolithic 1.2 kV 50 mΩ 4H-SiC bidirectional field effect transistor (BiDFET) with integrated JBS diodes is reported for the first time. The devices were fabricated in a 6-inch commercial foundry and then packaged in a custom-designed four-terminal module. The switching performance of the BiDFET has been observed to be 1.4x better than that of its internal JBSFETs. Dynamic characterization was performed at 800 V with different gate resistances, current levels and case temperatures. An increase in switching losses was observed for the BiDFET with increasing gate resistance and current level as observed for SiC power MOSFETs. The BiDFET showed a 9% reduction in total switching loss from 25 °C to 150 °C with a current of 10 A.
The increasing use of power electronics, such as high-current semiconductor devices and modules, within space vehicles is driving the need to develop specialty thermal management materials in both the packaging of these discrete devices and the packaging of modules consisting of these device arrays. Developed by Applied Nanotech, Inc. (ANI), CarbAl heat transfer material is uniquely characterized by its low density, high thermal diffusivity, and high thermal conductivity. Its coefficient of thermal expansion (CTE) is similar to most power electronic materials, making it an effective base plate substrate for state-of-the-art silicon carbide (SiC) super junction transistors. The material currently is being used to optimize hybrid vehicle inverter packaging. Adapting CarbAl-based substrates to space applications was a major focus of the SBIR project work. In Phase I, ANI completed modeling and experimentation to validate its deployment in a space environment. Key parameters related to cryogenic temperature scaling of CTE, thermal conductivity, and mechanical strength. In Phase II, the company concentrated on improving heat sinks and thermally conductive circuit boards for power electronic applications.
To support the electric power grid, some grid-connected converters are required to ride through abnormal grid conditions, including voltage disturbances. However, at the moment, when a grid voltage disturbance happens, a large inrush current could be induced due to the large difference between the grid and converter output pulsewidth modulation (PWM) voltages. This inrush current could be more severe in the faster switching SiC-based multilevel converter, which only needs a small filter inductance to meet its normal operation requirements, such as harmonics and peak ripple currents. In this article, a PWM mask method is used to limit the inrush current. With this method, the inrush current can be effectively limited to a preset value and can help the converter ride through grid voltage disturbances. Furthermore, the method is validated through experiments conducted on a single-phase SiC-based five-level converter considering low voltage, high voltage, and phase angle disturbances.