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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS1982

Visible charge-coupled device (CCD) focal plane design considerations for multispectral applications

The typical Multispectral Linear Array (MLA) Instrument mission would be to gather high-resolution, radiometrically accurate earth resources data in several spectral bands over a prolonged period of time. These bands would include the visible (VIS), near infrared (NIR) and short wavelength infrared. Silicon charge-coupled imaging devices (CCDs) can be assembled into contiguous pixel focal planes which will cover the VIS/NIR region and operate reliably for several years in a space environment. A typical MLA focal plane would have approximately 12,000 pixels, with a pixel-to-pixel registration requirement on the order of + or - 0.1 pixel. The technology to assemble such focal planes has been developed and is described. The problem of polarization sensitivity associated with certain types of focal plane assemblies is addressed. Radiation effects on CCDs are also discussed, and a practical solution to the problem through the use of shielding is described.

Sadowski, H.↗
NASA NTRS1984

Quantum efficiency measurements for several waveshifter coatings in the extreme vacuum ultraviolet

Quantum efficiency measurements are given for coronene and liumogen coatings designed to enhance UV sensitivity for silicon charge coupled device imaging detectors. Coatings on quartz and on UDT PIN 10DP photodiodes were tested. The wavelength range extended from 153.7 to 50.0 nm in the vacuum ultraviolet. Similar measurements were made for coronene, liumogen, and stilbene-3 laser dye films on quartz disks relative to sodium salicylate. Sodium salicylate and coronene are the most efficient waveshifters down to 50 nm so far observed. Coronene's fairly constant quantum efficiency over such a wide wavelength range into the far VUV makes it a useful waveshifter for UV and VUV applications.

Butner, C. L.↗
NASA NTRS1989

Real-time graphics for the Space Station Freedom cupola, developed in the Systems Engineering Simulator

Among the Lyndon B. Johnson Space Center's responsibilities for Space Station Freedom is the cupola. Attached to the resource node, the cupola is a windowed structure that will serve as the space station's secondary control center. From the cupola, operations involving the mobile service center and orbital maneuvering vehicle will be conducted. The Systems Engineering Simulator (SES), located in building 16, activated a real-time man-in-the-loop cupola simulator in November 1987. The SES cupola is an engineering tool with the flexibility to evolve in both hardware and software as the final cupola design matures. Two workstations are simulated with closed-circuit television monitors, rotational and translational hand controllers, programmable display pushbuttons, and graphics display with trackball and keyboard. The displays and controls of the SES cupola are driven by a Silicon Graphics Integrated Raster Imaging System (IRIS) 4D/70 GT computer. Through the use of an interactive display builder program, SES, cupola display pages consisting of two dimensional and three dimensional graphics are constructed. These display pages interact with the SES via the IRIS real-time graphics interface. The focus is on the real-time graphics interface applications software developed on the IRIS.

Red, Michael T.↗
NASA NTRS1993

Observations of upper atmospheric optical flashes recorded from an aircraft

Short-duration upper atmospheric optical flashes were recorded on the night of 8 July, 1993 (9 July UT) from the NASA DC-8 Airborne Laboratory flying over the American Midwest. All-sky video images from an intensified silicon intensified target (ISIT) camera revealed 19 upper atmospheric flashes occurring over a period of approximately 100 min. The flashes were similar in appearance to previously reported ground and shuttle-based video observations. Detailed analysis of 12 of the events yielded these parameters: (1) duration less than or equal to 17 ms; (2) brightness 10-50 kR, roughly that of bright aurorae; (3) terminal heights 30-100 km, with a mean of approximately 60 km; (4) horizontal extent 10-50 km; (5) emission volumes greater than 1000 cu km. The relative frequency of the optical flashes was (6) 1:200-1:400 compared to negative cloud-to-ground discharges and 1:20-1:40 compared to positive cloud-to-ground discharges.

Sentman, D. D.↗
NASA NTRS1995

The Yerkes Observatory 60-channel far infrared camera for the Kuiper Airborne Observatory

The Yerkes Observatory Far Infrared Camera employs a two-dimensional, 60-detector array of (3)He-cooled silicon bolometers for broadband imaging in the spectral range of 40 to 240 microns. Four interchangeable filters have effective wavelengths of 60, 100, 160, and 200 microns. Three interchangeable lens sets give pixel sizes of 17, 27, and 45 in. Signals are processed through nitrogen-temperature JFET source-follower amplifiers, warm preamplifiers, and digital signal processors, and the system is controlled through a graphical user interface on a Macintosh computer. The camera has been used to image a wide variety of galactic and extragalactic far infrared sources.

Harper, D. AL, Jr.↗
NASA NTRS1993

Observations of Upper Atmospheric Optical Flashes Recorded From an Aircraft

Short-duration upper atmospheric optical flashes were recorded on the night of 8 July, 1993 (9 July UT) from the NASA DC-8 Airborne Laboratory flying over the American Midwest. All-sky video images from an intensified silicon intensified target (ISIT) camera revealed 19 upper atmospheric flashes occurring over a period of approximately 100 min. The flashes were similar in appearance to previously reported ground and shuttle-based video observations. Detailed analysis of 12 of the events yielded these parameters: (1) duration less than or = 17 ms; (2) brightness 10-50 kR, roughly that of bright aurorae; (3) terminal heights 30-100 km, with a mean of approximately 60 km; (4) horizontal extent 10-50 km; and (5) emission volume greater than 1000 km(sup 3). The relative frequency of the optical flashes was (6) 1:200-1:400 compared to negative cloud-to-ground discharges and 1:20-1:40 compared to positive cloud-to-ground discharges.

Sentman, D. D.↗
NASA NTRS1996

Macular Preprocessing of Linear Acceleratory Stimuli: Implications for the Clinic

Three-dimensional reconstructions of innervation patterns in rat maculae were carried out using serial section images sent to a Silicon Graphics workstation from a transmission electron microscope. Contours were extracted from mosaicked sections, then registered and visualized using Biocomputation Center software. Purposes were to determine innervation patterns of type II cells and areas encompassed by vestibular afferent receptive fields. Terminals on type II cells typically are elongated and compartmentalized into parts varying in vesicular content; reciprocal and serial synapses are common. The terminals originate as processes of nearby calyces or from nerve fibers passing to calyces outside the immediate vicinity. Thus, receptive fields of the afferents overlap in unique ways. Multiple processes are frequent; from 4 to 6 afferents supply 12-16 terminals on a type II cell. Processes commonly communicate with two type II cells. The morphology indicates that extensive preprocessing of linear acceleratory stimuli occurs peripherally, as is true also of visual and olfactory systems. Clinically, this means that loss of individual nerve fibers may not be noticed behaviorally, due to redundancy (receptive field overlap). However, peripheral processing implies the presence of neuroactive agents whose loss can acutely or chronically alter normal peripheral function and cause balance disorders. (Platform presentation preferred - Theme 11)

Ross, M. D.↗
NASA NTRS1997

Characterization of Semiconductor Materials Using AOTF Instruments

A non-invasive characterization of silicon-on-insulator (SOI) wafers using white light interference measured by an AOTF polarimetric hyperspectral imaging instrument will be presented an an illustration of the technology potential. Experiments provided high resolution thickness maps of both silicon and oxide layers with accuracy and observed optically active imperfections and distributions in the structure.

polarimetric hyperspectral imaging silicon oxide↗
NASA NTRS1983

Meniscus Imaging for Crystal-Growth Control

Silicon crystal growth monitored by new video system reduces operator stress and improves conditions for observation and control of growing process. System optics produce greater magnification vertically than horizontally, so entire meniscus and melt is viewed with high resolution in both width and height dimensions.

Sachs, E. M.↗
NASA NTRS1982

Images of the future - Two decades in astronomy

Future instruments for the 100-10,000 A UV-wavelength region will require detectors with greater quantum efficiency, smaller picture elements, a greater wavelength range, and greater active area than those currently available. After assessing the development status and performance characteristics of vidicons, image tubes, electronographic cameras, digicons, silicon arrays and microchannel plate intensifiers presently employed by astronomical spacecraft, attention is given to such next-generation detectors as the Mosaicked Optical Self-scanned Array Imaging Camera, which consists of a photocathode deposited on the input side of a microchannel plate intensifier. The problems posed by the signal processing and data analysis requirements of the devices foreseen for the 21st century are noted.

Weistrop, D.↗
NASA NTRS2002

Silicon-on-insulator (SOI) active pixel sensors with the photosite implemented in the substrate

Active pixel sensors for a high quality imager are fabricated using a silicon-on-insulator (SOI) process by integrating the photodetectors on the SOI substrate and forming pixel readout transistors on the SOI thin-film. The technique can include forming silicon islands on a buried insulator layer disposed on a silicon substrate and selectively etching away the buried insulator layer over a region of the substrate to define a photodetector area. Dopants of a first conductivity type are implanted to form a signal node in the photodetector area and to form simultaneously drain/source regions for a first transistor in at least a first one of the silicon islands. Dopants of a second conductivity type are implanted to form drain/source regions for a second transistor in at least a second one of the silicon islands. Isolation rings around the photodetector also can be formed when dopants of the second conductivity type are implanted. Interconnections among the transistors and the photodetector are provided to allow signals sensed by the photodetector to be read out via the transistors formed on the silicon islands.

Pain, Bedabrata↗
NASA NTRS2005

Silicon-on-insulator (SOI) active pixel sensors with the photosite implemented in the substrate

Active pixel sensors for a high quality imager are fabricated using a silicon-on-insulator (SOI) process by integrating the photodetectors on the SOI substrate and forming pixel readout transistors on the SOI thin-film. The technique can include forming silicon islands on a buried insulator layer disposed on a silicon substrate and selectively etching away the buried insulator layer over a region of the substrate to define a photodetector area. Dopants of a first conductivity type are implanted to form a signal node in the photodetector area and to form simultaneously drain/source regions for a first transistor in at least a first one of the silicon islands. Dopants of a second conductivity type are implanted to form drain/source regions for a second transistor in at least a second one of the silicon islands. Isolation rings around the photodetector also can be formed when dopants of the second conductivity type are implanted. Interconnections among the transistors and the photodetector are provided to allow signals sensed by the photodetector to be read out via the transistors formed on the silicon islands.

Zheng, Xinyu↗
NASA NTRS1986

Increased sensitivity of a vidicon optical multichannel analyzer with a detachable electrostatic image intensifier

A substantial gain in sensitivity is reported through the addition of a commercially available electrostatic image intensifier to a silicon-intensified target vidicon system. This comparatively low cost modification allows cooled or room temperature operation, CW or pulsed detection, and ease of removal or attachment. A 40-mm, first-generation technology image intensifier was used in a configuration in which the photocathode end was at negative high voltage and the phosphor end was at ground. Cooling the vidicon detector did not result in improved SNR; more generally, a 50-fold sensitivity increase was observed for the image intensifier/vidicon system.

Snow, J. B.↗
NASA NTRS1999

Consequences of Atomic Oxygen Interaction With Silicone and Silicone Contamination on Surfaces in Low Earth Orbit

The exposure of silicones to atomic oxygen in low Earth orbit causes oxidation of the surface, resulting in conversion of silicone to silica. This chemical conversion increases the elastic modulus of the surface and initiates the development of a tensile strain. Ultimately, with sufficient exposure, tensile strain leads to cracking of the surface enabling the underlying unexposed silicone to be converted to silica resulting in additional depth and extent of cracking. The use of silicone coatings for the protection of materials from atomic oxygen attack is limited because of the eventual exposure of underlying unprotected polymeric material due to deep tensile stress cracking of the oxidized silicone. The use of moderate to high volatility silicones in low Earth orbit has resulted in a silicone contamination arrival at surfaces which are simultaneously being bombarded with atomic oxygen, thus leading to conversion of the silicone contaminant to silica. As a result of these processes, a gradual accumulation of contamination occurs leading to deposits which at times have been up to several microns thick (as in the case of a Mir solar array after 10 years in space). The contamination species typically consist of silicon, oxygen and carbon. which in the synergistic environment of atomic oxygen and UV radiation leads to increased solar absorptance and reduced solar transmittance. A comparison of the results of atomic oxygen interaction with silicones and silicone contamination will be presented based on the LDEF, EOIM-111, Offeq-3 spacecraft and Mir solar array in-space results. The design of a contamination pin-hole camera space experiment which uses atomic oxygen to produce an image of the sources of silicone contamination will also be presented.

Banks, Bruce A.↗
NASA NTRS1980

Microdistribution of oxygen in silicon

The microdistribution of oxygen in Czochralskii-grown, p-type silicon crystals was determined by using the SEM in the EBIC mode in conjunction with spreading resistance measurements. When the conductivity remained p-type, bands of contrast were observed in the EBIC image which corresponded to maxima in resistivity. When at the oxygen concentration maxima the oxygen donor concentration exceeded the p-type dopant concentration, an inversion of the conductivity occurred. It resulted in the formation of p-n junctions in a striated configuration and the local inversion of the EBIC image contrast. By heat-treating silicon at 1000 C prior to the activation of oxygen donors, some silicon-oxygen micro-precipitates were observed in the EBIC image within the striated oxygen concentration maxima.

Murgai, A.↗
NASA NTRS1979

Quantitative Analysis of Defects in Silicon

The evaluation and prediction of the conversion efficiency for a variety of silicon samples with differences in structural defects, such as grain boundaries, twin boundaries, precipitate particles, dislocations, etc. are discussed. Quantitative characterization of these structural defects, which were revealed by etching the surface of silicon samples, is performed by using an image analyzer. Due to different crystal growth and fabrication techniques the various types of silicon contain a variety of trace impurity elements and structural defects. The two most important criteria in evaluating the various silicon types for solar cell applications are cost and conversion efficiency.

Natesh, R.↗
NASA NTRS2009

Alternative Packaging for Back-Illuminated Imagers

An alternative scheme has been conceived for packaging of silicon-based back-illuminated, back-side-thinned complementary metal oxide/semiconductor (CMOS) and charge-coupled-device image-detector integrated circuits, including an associated fabrication process. This scheme and process are complementary to those described in "Making a Back-Illuminated Imager With Back-Side Connections" (NPO-42839), NASA Tech Briefs, Vol. 32, No. 7 (July 2008), page 38. To avoid misunderstanding, it should be noted that in the terminology of imaging integrated circuits, "front side" or "back side" does not necessarily refer to the side that, during operation, faces toward or away from a source of light or other object to be imaged. Instead, "front side" signifies that side of a semiconductor substrate upon which the pixel pattern and the associated semiconductor devices and metal conductor lines are initially formed during fabrication, and "back side" signifies the opposite side. If the imager is of the type called "back-illuminated," then the back side is the one that faces an object to be imaged. Initially, a back-illuminated, back-side-thinned image-detector is fabricated with its back side bonded to a silicon handle wafer. At a subsequent stage of fabrication, the front side is bonded to a glass wafer (for mechanical support) and the silicon handle wafer is etched away to expose the back side. The frontside integrated circuitry includes metal input/output contact pads, which are rendered inaccessible by the bonding of the front side to the glass wafer. Hence, one of the main problems is to make the input/output contact pads accessible from the back side, which is ultimately to be the side accessible to the external world. The present combination of an alternative packaging scheme and associated fabrication process constitute a solution of the problem.

Pain, Bedabrata↗
NASA NTRS2022

Probing Dark Current Random Telegraph Signal in a Small Pitch Vertically Pinned Photodiode CMOS Image Sensor after Proton Irradiation

Dark Current degradation and Dark Current Ran- dom Telegraph Signal after proton irradiation are studied in new scale silicon microvolumes by using a commercial CMOS Image Sensor. Results show that previously reported empirical models describing the Displacement Damage induced degradations are still valid despite the 10 to 100 times smaller depletion volume used. In addition, no evidence of significant Total Ionizing Dose effects is observed. Finally the reduction of the fraction of Random Telegraph Signal (RTS) pixels detected and of the fraction of multi-level RTS pixels is directly linked to the reduction in pixel volume.

CMOS Image Sensor (CIS)↗