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Solid State Drive Radiation Assurance With Active Testing
Single-event effects (SEE) and total ionizing dose (TID) data are presented for several automotive- and industrial-grade solid-state drives, and the effects of different active test configurations on hardness assurance are explored.
Lessons and Recommendations for Board-Level Testing with Protons
Protons with sufficiently high energy, provided in a broad field covering on the order of 0.1m2 can be used to perform board-level testing for single event effects (SEE). NASA has used this approach for board-level testing over the last 20 years. Although many difficulties inherent in SEE testing are simplified when using a board-level test, including reduced cost, the method is inherently risky because of the limited value of the collected data and the potential to make critical mistakes when performing SEE testing this way, leading to data of less value. Historically, NASA’s approach to proton board-level testing has been limited to lower criticality applications. However, with users both inside and outside NASA using this method for higher levels of mission assurance, we have put together a set of lessons and recommendations to improve the value of data collected using this method. Focus areas covered include test preparation, test execution, and interpretation of results.
Tutorial: Radiation Effects in Electronic Systems
This tutorial presentation will give an overview of radiation effects in electrical, electronic, and electromechanical (EEE) components as it applies to civilian space systems of varying size and complexity. The natural space environment presents many unique threats to electronic systems regardless of where the systems operate from low-Earth orbit to interplanetary space. The presentation will cover several topics, including: an overview and introduction to the applicable space radiation environments common to a broad range of mission designs; definitions and impacts of effects due to impinging particles in the space environment e.g., total ionizing dose (TID), total non-ionizing dose (TNID), and single-event effects (SEE); and, testing for and evaluation of TID, TNID, and SEE in EEE components.
Current State of Domestic Heavy Ion Test Facilities
We present the current status of United States domestic heavy ion single-event effects (SEE) radiation test facilities, including general perspectives on near- and mid-term needs for both capacity and capabilities.
Radiation Testing Electronics with Heavy Ions-The Best Way to Hit a Target Moving Ever Exponentially Faster
In 1972, when engineers at Hughes Aircraft Corporation discovered that errors in their satellite avionics were being caused by cosmic rays (so-called single-event effects, or SEE), Moore's Law was only 7 years old. Now, more than 45 years on, the scaling that drove Moore's Law for its first 35 years has reached its limits. However, electronics technology continues to evolve exponentially and SEE remain a formidable issue for use of electronics in space. SEE occur when a single ionizing particle passes through a sensitive volume in an active semiconductor device and generates sufficient charge to cause anomalous behavior or failure in the device. Because SEE can occur at any time during the mission, the emphasis of SEE risk management methodologies is ensuring that all SEE modes in a device under test are detected by the test. Because a particle's probability of causing an SEE generally increases as the particle becomes more ionizing, heavy-ion beams have been and remain the preferred tools for elucidating SEE vulnerabilities. In this talk we briefly discuss space radiation environments and SEE mechanisms, describe SEE test methodologies and discuss current and future challenges for use of heavy-ion beams for SEE testing in an era when the continued validity of Moore's law depends on innovation rather than CMOS scaling.
Proton Testing: Opportunities, Pitfalls and Puzzles
Although proton SEE testing can place constraints on some heavy-ion SEE susceptibilities, it is important to quantify residual risk that protons may not reveal all SEE susceptibilities in a system. We examine the relative strengths and limitations of proton and heavy-ion SEE testing and how these may be affected by technology scaling and high-Z materials in the device.
Mitigating Upsets in SRAM Based FPGAs from the Xilinix Virtex 2 Family
This slide presentation reviews the single event upset static testing of the Virtex II field programmable gate arrays (FPGA) that were tested in protons and heavy-ions. The test designs and static and dynamic test results are reviewed.
Graphics Processor Units (GPUs)
This presentation will include information about Graphics Processor Units (GPUs) technology, NASA Electronic Parts and Packaging (NEPP) tasks, The test setup, test parameter considerations, lessons learned, collaborations, a roadmap, NEPP partners, results to date, and future plans.
Single-event Effect Report for EPC Series eGaN FETs: Proton Testing for SEE and TNID Effects
Previous testing of the Enhanced Power Conversion (EPC) eGaN FETs showed sensitivity to destructive single-event effects (SEE) effects to heavy ions. The presence of tungsten plugs in the gate area raises concerns that the device may be vulnerable to SEE from protons. Irradiation of biased and unbiased devices with heavy ion has results in some damage suspected of being due to total non-ionizing dose (TNID). Proton irradiation is a better radiation type to study this effect. This study presents the results of testing device with protons for SEE and TNID. No SEE in the EPC2012 device, the most sensitive device to SEE, were seen with 53 MeV protons at several angles. The devices continued to function after 1.5 Mrad (Si) of proton dose with only a slight shift in parameters. These results suggest that gross TNID will not be a factor in using these devices nor suffer from SEE due to protons. However, the device should be tested at with 500 MeV protons to guarantee to immunity proton SEE.
Radiation Effects on DC-DC Converters
In this work, several DC-DC converters were designed and built. The converters are Buck Buck-Boost, Cuk, Flyback, and full-bridge zero-voltage switched. The total ionizing dose radiation and single event effects on the converters were investigated. The experimental results for the TID effects tests show that the voltages of the Buck Buck-Boost, Cuk, and Flyback converters increase as total dose increased when using power MOSFET IRF250 as a switching transistor. The change in output voltage with total dose is highest for the Buck converter and the lowest for Flyback converter. The trend of increase in output voltages with total dose in the present work agrees with those of the literature. The trends of the experimental results also agree with those obtained from PSPICE simulation. For the full-bridge zero-voltage switch converter, it was observed that the dc-dc converter with IRF250 power MOSFET did not show a significant change of output voltage with total dose. In addition, for the dc-dc converter with FSF254R4 radiation-hardened power MOSFET, the output voltage did not change significantly with total dose. The experimental results were confirmed by PSPICE simulation that showed that FB-ZVS converter with IRF250 power MOSFET's was not affected with the increase in total ionizing dose. Single Event Effects (SEE) radiation tests were performed on FB-ZVS converters. It was observed that the FB-ZVS converter with the IRF250 power MOSFET, when the device was irradiated with Krypton ion with ion-energy of 150 MeV and LET of 41.3 MeV-square cm/mg, the output voltage increased with the increase in fluence. However, for Krypton with ion-energy of 600 MeV and LET of 33.65 MeV-square cm/mg, and two out of four transistors of the converter were permanently damaged. The dc-dc converter with FSF254R4 radiation hardened power MOSFET's did not show significant change at the output voltage with fluence while being irradiated by Krypton with ion energy of 1.20 GeV and LET of 25.97 MeV-square cm/mg. This might be due to fact that the device is radiation hardened.
The NASA Microelectronics Space Radiation Effects Program (MSREP) at the Jet Propulsion Laboratory
The primary objective of the Microelectronics Space Radiation Effects Program (MSREP) at the Jet Propulsion Laboratory (JPL) is to assist NASA in the selection of radiation hardened microelectronic parts for insertion in NASA space systems through radiation testing and research. Prior to presenting examples of the research and testing on Single Event Effects (SEE) and Total Ionizing Dose (TID) effects, the space radiation environment and radiation requirements for the CRAFT/Cassini program, a typical JPL space project, are discussed.
Field Programmable Gate Aray (FPGA) Radiation Data: All Data is Not Equal
Electronic parts (integrated circuits) have grown in complexity such that determining all failure modes and risks based on single particle event radiation testing is impossible. In this presentation, the authors will present why this is so and provide some realism on what this means to FPGAs. Its all about understanding actual risks and not making assumptions.
Single Event Effect Testing of the Linear Technology LT2078 Micropower Dual Op Amp
The Linear Technology (LT) LT2078 was tested for single event effect (SEE) at the Texas A&M University Cyclotron Facility (TAMU) on 11 April 2015. The device was exercised in varied load conditions to replicate its intended application with concerns about destructive effects on the commercial device.
Heavy Ion Irradiation Fluence Dependence for Single-Event Upsets in a NAND Flash Memory
We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and found that the single-event upset (SEU) cross section varied inversely with cumulative fluence. We attribute the effect to the variable upset sensitivities of the memory cells. Furthermore, the effect impacts only single cell upsets in general. The rate of multiple-bit upsets remained relatively constant with fluence. The current test standards and procedures assume that SEU follow a Poisson process and do not take into account the variability in the error rate with fluence. Therefore, traditional SEE testing techniques may underestimate the on-orbit event rate for a device with variable upset sensitivity.
Single-Event Effect Report for EPC Series eGaN FETs: Comparison of EPC1000 and EPC2000 Series Devices for Destructive SEE
Recent testing of the EPC1000 series eGaN FETs has shown sensitivity to Single Event Effects (SEE) that are destructive. These effects are most likely the failure of the very thin gate structure in HEMT architecture. EPC has recently changed the doping of the substrate to improve the performance and the SEE response. This testing compares the SEE response of both devices.
Proton Particle Test Fluence: What's the Right Number?
While we have been utilizing standard fluence levels such as those listed in the JESD57 document, we have begun revisiting what an appropriate test fluence is when it comes to qualifying a device for single events. Instead of a fixed fluence level or until a specific number of events occurs, a different thought process is required.
Single-Event Effect Report for EPC Series eGaN FETs: The Effect of Load Conditions on Destructive SEE
Recent testing of Enhanced Power Conversion (EPC) eGaN FET devices design for power use has shown that the devices are susceptible to Single-Event Effects (SEE) that degrade or destroy the device. The exact mechanism of the SEE is not known. The testing so far has been in the static condition, in the fully off condition, and with minimal load conditions. These conditions may not be worst case. This report presents the results of a study that tests some of the load conditions for SEE. The EPC2012 and EPC1012 were chosen for the test. The tests were performed the TAMU radiation effects facility in May and June of 2013.