Part-to-part and machine-to-machine variability in corrosion and roughness properties of additively manufactured stainless steel.
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Additive manufacturing of metal components enables rapid fabrication of complex geometries. However, metal additive manufacturing also introduces new morphological and microstructural characteristics which might be detrimental to component performance. Here we report the pitting corrosion properties of wrought and additively manufactured 316L stainless steel after atmospheric exposure to coastal environments and laboratory-created environments. Qualitative visualization in combination with quantitative analysis of resulting pits provided an in-depth understanding of pitting differences between wrought and additively manufactured 316L stainless steel and between coastal and laboratory-based exposure. Optical and scanning electron microscopy were utilized for visualization, while white light interferometry measured pits across approximately 5mm x 5mm areas on each sample. Post-processing of the interferometry data enables quantification of pitting attack for each sample in terms of both pit depth and pit volume. The pitting analysis introduced herein offers a new technique to compare pitting attack between different manufacturing processes and materials.
Additive manufacturing (AM) is a promising means of production of austenitic stainless steel (SS) parts for hydrogen service. The hydrogen embrittlement resistance of SS 316 L parts manufactured by powder-bed-fed selective laser melting (SLM) and directed energy deposition (DED) was examined using slow strain rate tensile testing. The influence of the hierarchical AM microstructures on mechanical response, microstructural evolution, and void formation were analyzed using multiscale electron microscopy. Furthermore, the presence of hydrogen reduced ductility in as-built DED materials, but did not significantly influence the response in as-built SLM material or heat-treated materials. Microstructural features driving these different responses are discussed.