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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS1976

Metal-insulator-semi-conductor studies of lead telluride

The capacitance and conductance-voltage characteristics were measured on metal-insulator-semiconductor capacitors fabricated with zirconium dioxide films on single-crystal lead telluride. At 77 K, on both n- and p-type substrates, evidence of surface potential control was obtained. Comparison of the measured capacitance-voltage characteristics with those calculated from the equilibrium solution of the one-dimensional Poisson equation indicated qualitative agreement, although the slope of the measured capacitance in the region near the capacitance minimum was less steep than calculated.

Lilly, D. A.↗
NASA NTRS1983

Observation of defects in mercury cadmium telluride crystals grown by chemical vapor transport

A mixture of nitric and hydrochloric acids was found to yield etch pits on mercury cadmium telluride crystals grown by chemical vapor transport using iodine or mercuric iodide as the transport agent. Two types of pits were observed by optical microscopy: triangular pyramidal and round saucer shaped pits. Transmission electron microscopy confirmed that two types of defects were present: dislocations and second phase occlusions. The present study suggests that the defects are near the crystal surface and therefore will probably not significantly affect the electrical characteristics.

Irene, E. A.↗
NASA NTRS1984

Electrochemical etching of the semiconductor lead tin telluride

Convective currents during the Bridgman growth of a compound semiconductor lead to temperature fluctuations at the solid-liquid interface. These temperature fluctuations in turn lead to microscopic compositional variations in the solid. Electrochemical principles have been applied to develop three etches which delineate the variations in the compound semiconductor, lead tin telluride, and allow optical studies of the growth kinetics of this material. Use of these etches has shown periodic lines during the initial growth, with indications of oscillatory instabilities developing in later stages of growth, and, finally, complete breakdown of the interface.

Barber, P. G.↗
NASA NTRS1985

Ion beam sputter deposited zinc telluride films

Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter depoairion are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq. cm. resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x to to the -6/ohm. cm. for 300 angstrom film to 2.56 x 10 to the -1/ohm. cm. for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

Gulino, D. A.↗
NASA NTRS1986

A procedure to visualize the melt-solid interface in Bridgman grown germanium and lead tin telluride

An X-ray and gamma-ray analysis technique has been developed which makes it possible to observe the melt solid interface during semiconductor crystal growth in a Bridgman furnace. Experiments have been carried out to observe the interface movement and shape in germanium as well as in lead tin telluride by means of the new method, and the results are discussed in detail. X-ray and gamma-ray radiographs of the melt-solid interfaces in the two semiconductor crystal specimens, are provided.

Barber, P. G.↗
NASA NTRS1986

Ion beam sputter deposited zinc telluride films

Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter deposition are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq cm resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x 10 to the -6th/ohm cm for 300 angstrom film to 2.56 x 10 to the -1/ohm cm for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

Gulino, D. A.↗
NASA NTRS1988

Electron mobility in mercury cadmium telluride

A previously developed program, which includes all electronic interactions thought to be important, does not correctly predict the value of electron mobility in mercury cadmium telluride particularly near room temperature. Part of the reason for this discrepancy is thought to be the way screening is handled. It seems likely that there are a number of contributors to errors in the calculation. The objective is to survey the calculation, locate reasons for differences between experiment and calculation, and suggest improvements.

Patterson, James D.↗
NASA NTRS1988

Photoreflectance Study of Boron Ion-Implanted (100) Cadmium Telluride

Ion implanted (100) cadmium telluride was studied using the contactless technique of photoreflectance. The implantations were performed using 50- to 400-keV boron ions to a maximum dosage of 1.5 x 10(16)/sq cm, and the annealing was accomplished at 500 C under vacuum. The spectral measurements were made at 77 K near the E(0) and E(1) critical points; all the spectra were computer-fitted to Aspnes' theory. The spectral line shapes from the ion damaged, partially recovered and undamaged, or fully recovered regions could be identified, and the respective volume fraction of each phase was estimated.

Amirtharaj, P. M.↗