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At least 91 records · Page 5

Magnetostriction and magnetoelastic quantum oscillations in P-type lead telluride

A detailed experimental and theoretical study of quantum oscillations in the magnetostriction and Young's modulus of p-PbTe is presented. The valance band of PbTe is approximated by a spheroidal, nonparabolic model in which the effects of strain on the valance band parameters are described by a deformation potential model. Using appropriate thermodynamic derivatives of the modified Lifshitz-Kosevich expression for the oscillatory parts of the electronic free energy, it is shown that both types of oscillations arise mainly from relative shifts of the valance band maxima due to shear strains, accompanied by intervalley charge transfer. Band parameters derived from the periods, phases, and spin splitting of the oscillations are in generally good agreement with values reported by other workers. A detailed comparison is made of the experimentally observed oscillation amplitudes with those predicted by theory, and satisfactory agreement is found. The ratio of the amplitudes of the two effects yields a value of the valance band deformation potential in good agreement with a value found from piezoresistance experiments by Burke.

Thompson, T. E.↗

N-type mercury-cadmium-telluride photoconductors in optical heterodyne communication systems.

Discussion of the performance of a photoconductive (Hg,Cd)Te detector/mixer in a carbon dioxide laser heterodyne communication system. The utility of computer simulation of the performance of an optical heterodyne detector/mixer is demonstrated. Certain unusual properties of this device are pointed out that, while having a substantial impact on device performance, have received little previous attention.

Cohen, S. C.↗

Investigation of the difficulties associated with the use of lead telluride and other II - IV compounds for thin film thermistors

The fabrication of thermistors was investigated for use as atmospheric temperature sensors in meteorological rocket soundings. The final configuration of the thin film thermistor is shown. The composition and primary functions of the six layers of the sensor are described. A digital controller for thin film deposition control is described which is capable of better than .1 A/sec rate control. The computer program modules for digital control of thin film deposition processing are included.

Mclennan, W. D.↗

Ground based studies for the space processing of lead-tin-telluride

This paper summarizes the results of a series of studies dealing with crystal growth from the melt and in particular, the growth of the narrow bandgap semiconductor PbSnTe by the Bridgman technique. Theoretical calculations have shown that for low Prandtl number fluids such as semiconductors, convection has no effect on the temperature field in the melt but has a significant effect on the compositional field. They also show that convective flow will exist in a Bridgman growth system on earth, even in the 'thermally stable' configuration. Measurements of the specific heat have been made up to temperatures of 722 C. The thermal diffusivity has been measured up to 1010 C which includes values for the melt. The interdiffusion coefficients for PbTe and SnTe in the melt have been determined. A technique has been developed and tested which provides a vacuum tight quartz ampoule with electrical feedthroughs for interface demarcation studies during the Bridgman growth. Analysis of crystals grown has indicated that the PbSnTe system is solutally unstable and the distribution of SnTe in the crystal, after an anomalous first to freeze region, follows that predicted by Pfann for convection controlled growth. Studies of the amount of supercooling in PbSnTe indicate that this may explain an anomalous composition distribution in the first to freeze region of an unseeded growth.

Crouch, R. K.↗

Mercury cadmium telluride short- and medium-wavelength infrared staring focal plane arrays

Short and medium IR wavelength 64 x 64 hybrid focal plane arrays (FPAs) have been developed using sapphire-grown HgCdTe. The short wavelength arrays were developed for a prototype airborne imaging spectrometer, while those of medium wavelength are suitable for tactical missile seekers and strategic surveillance systems. Attention is presently given to results obtained for these FPAs' current-voltage characteristics, as well as for their characterization at different temperatures. The detector arrays were also mated to a multiplexer and characterized under different operating conditions. The unit cell size used is 52 x 52 microns.

Vural, Kadri↗

Method of preparing radially homogeneous mercury cadmium telluride crystals

Hg(1-x)Cd(x)Te is prepared in an improved directional solidification method in which a precast alloy sample containing predetermined amounts of Hg, Cd, and Te is disposed in a sealed ampule and a furnace providing two controlled temperature zones is translated upward past the ampule to provide melting and resolidification. The present improvement is directed to maintaining the zones at temperatures determined in accordance with a prescribed formula providing a thermal barrier between the zones with a maximum thickness and translating the furnace past the zones at a rate less the 0.31 micron/sec.

Lehoczky, Sandor L.↗

Vapor transport crystal growth of mercury-cadmium-telluride in microgravity

Two epitaxial growth experiments of Hg(1-x)Cd(x)Te layers on (100) CdTe substrates in closed ampoules using HgI2 as a transport agent have been performed during the USML-1 mission. The characterization results to date demonstrate a considerable improvement of the space-grown epitaxial layers relative to ground-control specimens in terms of morphology, compositional uniformity, and structural micro homogeneity. These results show the effects of microgravity and fluid dynamic disturbances on-ground on the deposition and growth processes. The continued analysis of this technologically important system is designed to further elucidate the observed crystallographic improvements and their relation to mass flow.

Wiedemeier, Heribert↗

Improved Growth Of Cadmium Telluride Crystals Fro m Vapors

Effusive ampoule physical vapor transport (EAPVT) improved technique for growing high-quality crystals from vapors. Apparatus includes infrared-reflective viewing port for optical in situ monitoring of structure of growing crystal, enabling efficient determination of optimal thermal and transport operating conditions. Used commercially for efficiently growing various semiconductor compounds in form of single crystals of high structural and compositional uniformity.

Rosenberger, Franz↗

Research support for cadmium telluride crystal growth

The growth of single crystals of zinc selenide was carried out by both closed ampoule physical vapor transport and effusive ampoule physical vapor transport (EAPVT). The latter technique was shown to be a much more efficient method for the seeded growth of zinc selenide, resulting in higher transport rates. Furthermore, EAPVT work on CdTe has shown that growth onto (n 11) seeds is advantageous for obtaining reduced twinning and defect densities in II-VI sphalerite materials.

Rosenberger, Franz↗

Experimental Studies on Mass Transport of Cadmium-Zinc Telluride by Physical Vapor Transport

Experimental studies on mass transport of ternary compound, Cd(1-x)Zn(x)Te by physical vapor transport (PVT) for source compositions up to X = 0.21 are presented. The effect of thermochemical (temperatures, vapor composition) and other factors (preparation of the source, crystal growth rate, temperature gradient) on composition and composition profiles of the grown crystals were investigated. A steep decrease in the mass flux with an increase in X(crystal) for X less than 0.1, and a difference in composition between the source and the deposited material have been observed. The composition profiles of the crystals were found to depend on the density and pretreatment of the source, and on the temperature gradient in the source zone. The homogeneity of the crystals improves at low undercoolings and/or when an appropriate excess of metal constituents is present in the vapor phase. The experimental results are in good agreement with our thermochemical model of this system.

Palosz, W.↗

Characterization of Cadmium-Zinc Telluride Crystals Grown by 'Contactless' PVT Using Synchrotron White Beam Topography

Crystals of Cd(1-x)Zn(x)Te grown by Physical Vapor Transport (PVT) using self-seeding 'contactless' techniques were characterized using synchrotron radiation (reflection, transmission, and Laue back-reflection X-ray topography). Crystals of low (x = 0.04) and high (up to x approx. = 0.4) ZnTe content were investigated. Twins and defects such as dislocations, precipitates, and slip bands were identified. Extensive inhomogeneous strains present in some samples were found to be generated by interaction (sticking) with the pedestal and by composition gradients in the crystals. Large (up to about 5 mm) oval strain fields were observed around some Te precipitates. Low angle grain boundaries were found only in higher ZnTe content (x greater than or equal to 0.2) samples.

Palosz, W.↗

Experiment 2: Vapor Transport Crystal Growth of Mercury Cadmium Telluride in Microgravity- USML-2

The new epitaxial growth experiments of Hg(l-x)Cd(x)Te on (100) CdTe substrates by chemical vapor transport (CVT), using HgI2 as a transport agent, were performed in the transient growth regime of this ternary, heteroepitaxial system at normal and reduced gravity during the USML-2 flight. The surface and interface morphology, the compositional and structural uniformity, and carrier mobility of the epitaxial layer and islands grown in microgravity are measurably improved relative to ground specimens. These observations demonstrate the effects of convective flow on the transport, deposition, and growth processes of this solid-vapor system even in the transient growth regime. The properties of the Hg(l-x)Cd(x)Te layer grown in a microgravity environment compare quite favorably to those of layers obtained by other techniques.

Wiedemeier, H.↗

Physical Vapor Transport of Lead Telluride

Mass transport properties of physical vapor transport of PbTe are investigated. Thermochemical analysis of the system and its implications for the growth conditions are discussed. The effect of the material preparation and pre-processing on the stoichiometry and residual gas pressure and composition, and on related mass flux is shown. A procedure leading to high mass transport rates is presented.

Palosz, W.↗

Thermochemical Model and Experimental Studies on Physical Vapor Transport of Lead Telluride-Selenide

Mass transport rate and composition of the transported material as a function of different process parameters like temperature, undercooling, inert gas pressure, and the source compactness for different PbTe(1-x)Se(x), compositions were studied. With a proper preparation procedures mass transport rates suitable for growth at the rate of 0.5 - 1 mm/h were obtained. Different composition non-uniformities in the deposited material were observed. Due to deviation of the PbTe-PbSe solid solution from ideality, congruent mass transport of the material takes place around X = 0.3. For other compositions an improved and even good uniformity can be achieved when a solid, premelted source material is used.

Palosz, W.↗

Effects of annealing electrodeposited bismuth Telluride films

Thermoelectric thin films exhibit different qualities when compared with bulk materials. The goal however is to achieve thermoelectric properties of bulk materials from electrodeposited thin films. Thin films are produced by electrochemical deposition at room temperature. In order to optimize thermoelectric figure of merit proper carrierconcentration must be obtained.

thermoelectric power generation segmented↗

The (55)Fe X-ray Energy Response of Mercury Cadmium Telluride Near-Infrared Detector Arrays

The accurate determination of a detector's fundamental parameters, including read noise, dark current, and QE, relies on a proper measurement of a detector's conversion gain (e- ADU(exp -1)). Charge coupling effects, such as interpixel capacitance, attenuate photon shot noise and result in an overestimation of conversion gain when implementing the photon transfer technique. An approach involving (55)Fe X-rays provides a potentially straightforward measurement of conversion gain by comparing the observed instrumental counts (ADU) to the known charge (e-) liberated by the X-ray. This technique is already preferred within the CCD community, as the pair production energy for silicon is well established. In contrast, to date the pair production energy is unknown for HgCdTe, a material commonly used for near-infrared detectors. In this paper, we derive a preliminary calibration of the (55)Fe X-ray energy response of HgCdTe using 8 HST WFC3 1.7 micrometers flight grade detectors. Our conversion of the X-ray intensities from counts into electrons implements a technique that restores the 'true' gain via classical propagation of errors. For these detectors, our analysis yields preliminary results of good statistical precision: each Ka event generates 1849 +/- 46 electrons, which corresponds to a pair production energy of 3.21+/-f 0.08 eV. We are continuing to assess potential systematic effects to further refine the accuracy of this result.

Fox, Ori↗