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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Copper Defects and Charge Collection in Cadmium Telluride Photovoltaic Devices

In CdTe photovoltaic devices, the CdTe layer must be doped with Cu to reduce its resistivity, increase carrier lifetime, and improve hole transport. However, the Cu concentration is typically very low around the interfaces and within the CdTe layer, making it difficult to determine the influence Cu has on charge transport at the nanoscale; Cu concentrations are difficult to detect due to low ionization probability of Cu atoms [1]. Here, we use synchrotron X-ray microscopy to probe the nanoscale distribution of Cu and correlate it to local charge collection in CdTe photovoltaic devices. We demonstrate Cu segregation around grain boundaries, and, using cross-section charge collection measurements and transport modelling, show recombination center concentration in the CdTe layer dictates the interface at which charge collection occurs. The work gives insights on how Cu distributes in CdTe photovoltaic systems, and an understanding of how these distributions affect charge transport.

Walker, Trumann↗
DOE OSTI2023

Pyrolyzer Assisted Vapor Transport Deposition of Antimony-doped Cadmium Telluride

A new method for in-situ Sb doping of CdTe that uses a modified vapor transport deposition system is described. This modification enables control of the Sb concentration with a pyrolysis stage to enhance the doping efficiency. CdTe:Sb films under different deposition conditions are characterized by SEM, XRD, and CV measurements for determining morphology, crystal structure, and hole concentration. Variations of the Sb dopant heater and pyrolyzer temperatures do not affect the CdTe morphology and crystal structure. However, CV measurements show that a higher dopant heater or pyrolyzer temperature leads to higher hole concentration. In this study, CdTe: Sb films achieve a hole concentration of 1016 cm-3 and 10% doping efficiency when the dopant heater is 600C and the pyrolyzer temperature is 1100C. This demonstrates a path to produce high hole concentration polycrystalline CdTe film with a low concentration of dopant-induced defect.

14 SOLAR ENERGY↗
DOE OSTI2021

Binary and Ternary Colloidal Cu–Sn–Te Nanocrystals for Thermoelectric Thin Films

Recent advances in copper chalcogenide-based nanocrystals (NCs), copper sulfide, and copper selenide derived nanostructures, have drawn considerable attention. However, reports of crystal phase and shape engineering of binary or ternary copper telluride NCs remain rare. Here, a colloidal hot-injection approach for producing binary copper/tin telluride, and ternary copper tin telluride NCs with controllable compositions, crystal structures, and morphologies is reported. Here, the crystal phase and growth behavior of these tellurides are systematically studied from both experimental and theoretical perspectives.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2020

Mesoporous materials and processes for preparation thereof

A process for preparing a mesoporous material, e.g., transition metal oxide, sulfide, selenide or telluride, Lanthanide metal oxide, sulfide, selenide or telluride, a post-transition metal oxide, sulfide, selenide or telluride and metalloid oxide, sulfide, selenide or telluride. The process comprises providing an acidic mixture comprising a metal precursor, an interface modifier, a hydrotropic or lyotropic ion precursor, and a surfactant; and heating the acidic mixture at a temperature and for a period of time sufficient to form the mesoporous material. A mesoporous material prepared by the above process. A method of controlling nano-sized wall crystallinity and mesoporosity in mesoporous materials. The method comprises providing an acidic mixture comprising a metal precursor, an interface modifier, a hydrotropic or lyotropic ion precursor, and a surfactant; and heating the acidic mixture at a temperature and for a period of time sufficient to control nano-sized wall crystallinity and mesoporosity in the mesoporous material. Mesoporous materials and a method of tuning structural properties of mesoporous materials.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Te/CdTe and Al/CdTe Interfacial Energy Band Alignment by Atomistic Modeling

A synergistic approach that incorporates first-principles atomistic modeling with numerical device simulations is used to systematically evaluate the role of heterointerfaces within metal-chalcogenide-based photovoltaic technologies. Two interfaces involving either a tellurium back contact or aluminum back electrode combined with a cadmium telluride absorber layer within cadmium-telluride-based thin-film solar cells are investigated on an atomic scale to determine the mechanisms contributing to variations in device performance. Electronic structures and predicted charge transport behavior with respect to cadmium and tellurium termination of the absorber layer are studied along the polar oriented CdTe{111} facets. The computational methodology reveals a noticeable contrast between the Schottky barrier forming Al/CdTe interface versus the Type I Te/CdTe heterojunction. Greater band bending features are exhibited by the cadmium termination as opposed to the tellurium termination for each interface case. Subsequent device modeling suggests that 3.6% higher photovoltaic conversion efficiency is achievable for the cadmium termination relative to the tellurium termination of the Te/CdTe interface. Based strictly on an idealistic representation, both interface models show the importance of atomic-scale interfacial properties for cadmium telluride solar cell device performance with their bulk properties being validated in comparison to published experimental data. Here, the synergistic approach offers a suitable method to analyze solar cell interfaces through a predictive computational framework for the engineering and optimization of metal-chalcogenide-based thin-film photovoltaic technologies.

Green’s function↗
DOE OSTI2025

Realizing tunable Fermi level in SnTe by defect control

The tuning of the Fermi level in tin telluride, a topological crystalline insulator, is essential for accessing its unique surface states and optimizing its electronic properties for applications such as spintronics and quantum computing. In this study, we demonstrate that the Fermi level in tin telluride can be effectively modulated by controlling the tin concentration during chemical vapor deposition synthesis. By introducing tin-rich conditions, we observed a blue shift in the x-ray photoelectron spectroscopy core-level peaks of both tin and tellurium, indicating an upward shift in the Fermi level. Further, this shift is corroborated by a decrease in work function values measured via ultraviolet photoelectron spectroscopy, confirming the suppression of Sn vacancies. Our findings provide a low-cost, scalable method to achieve tunable Fermi levels in tin telluride, offering a significant advancement in the development of materials with tailored electronic properties for next-generation technological applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Study of CdZnTeSe Gamma-Ray Detector under Various Bias Voltages

Cadmium zinc telluride selenide (CdZnTeSe) is a new semiconductor material for gamma-ray detection and spectroscopy applications at room temperature. It has very high crystal quality compared to similar materials such as cadmium telluride and cadmium zinc telluride. The consistency of peak position in radiation detection devices is important to practical applications. In this paper, we have characterized a CdZnTeSe planar detector for bias voltages in the range of -20 V to -200 V and amplifier shaping time of 2, 3 and 6 μs. The peak position of the 59.6-keV gamma line of 241 Am becomes more stable as the absolute value of the applied voltage increases. The best energy resolution of 8.5% was obtained for the 59.6-keV gamma peak at -160 V bias voltage and 3-μs shaping time. The energy resolution was relatively stable in the -120 V to -200 V range for a 6-μs shaping time. Future work will be focused on the study of the peak position and energy resolution over time.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Characterization of CdZnTeSe Nuclear Detector Chemically Etched in Bromine Methanol

Semiconductor nuclear radiation detectors made from tertiary and quaternary compounds of cadmium telluride (CdTe) can operate at room temperature without cryogenic cooling. One of such materials that have become of great interest is cadmium zinc telluride selenide (CdZnTeSe). Compared to other CdTe-based materials, such as cadmium zinc telluride (CdZnTe), CdZnTeSe can be grown with much less Te inclusions and sub-grain boundary networks. Chemical etching is often used to smoothen wafer surfaces during detector fabrication. This paper presents the characterization of CdZnTeSe that is chemically etched using bromine methanol solution. Infrared imaging shows that the wafer has no sub-grain boundary networks that often limit detector performance. The current-voltage (I-V) characterization experiment gave a resistivity of 4.6 × 10 10 Ω-cm for the sample. The I-V curve was linear in the ±10 to ±50 volts range. An energy resolution of 7.2% was recorded at 100 V for the 59.6-keV gamma line of 241 Am.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Prediction of Bi 2 Te 3 -Sb 2 Te 3 Interfacial Conductance and Superlattice Thermal Conductivity Using Molecular Dynamics Simulations

Bismuth telluride (Bi 2 Te 3 ) and its alloys with antimony telluride (Sb 2 Te 3 ) have long been considered to be the best room-temperature bulk thermoelectric (TE) materials. In recent decades, proof-of-concept demonstrations on Bi 2 Te 3 -Sb 2 Te 3 nanostructures have shown high TE performance due to reduction in lattice thermal conductivities. Particularly, ultra-low thermal conductivities have been observed in Bi 2 Te 3 -Sb 2 Te 3 1D superlattices, leading to thermoelectric figures of merit (ZT) as high as 2.4. In contrast, very few computational studies have been performed to provide insight into the phonon transport across these nanostructures. In this work, we use non-equilibrium molecular dynamics simulations with previously developed force fields to simulate thermal transport across Bi 2 Te 3 -Sb 2 Te 3 interfaces and superlattices. We first calculate the thermal conductance associated with a Bi 2 Te 3 -Sb 2 Te 3 interface across a temperature range of 200–400 K. Furthermore, the values are also compared with thermal conductances calculated by a modified Landauer transport formalism using phonon transmission coefficients obtained from the diffuse mismatch model. Our results show that inelastic scattering processes contribute to an increase in interfacial thermal conductance at higher temperatures. Finally, we calculate the thermal conductivities of Bi 2 Te 3 -Sb 2 Te 3 superlattices with varying period lengths from 2 to 18 nm. A minimum thermal conductivity of 0.27 W/mK is observed at a period length of 4 nm, which is attributed to the competition between incoherent and coherent phonon transport regimes. In comparison with previous experimental measurements in the literature, our results show good agreement with respect to the range of thermal conductivity values and the period length corresponding to the minimum superlattice thermal conductivity.

42 ENGINEERING↗
DOE OSTI2025

Water intensity of photovoltaic module manufacturing at the terawatt scale

As the U.S. ramps photovoltaic (PV) manufacturing to the terawatt scale and emphasizes re-shoring manufacturing, potential regional impacts on the U.S. water supply should be considered, particularly since many PV companies rely almost exclusively on public water supplies for manufacturing. This work surveys the academic literature and PV manufacturer reports to estimate the water intensity of monocrystalline silicon, multicrystalline silicon, and cadmium telluride modules manufactured at the terawatt scale, determining that on average, cadmium telluride manufacturing is less water intensive on a per megawatt scale – this is anticipated to be true for all thin film PV manufacturing. While much lower than the water intensity of thermoelectric (e.g., coal) energy generation, significant issues and gaps with PV manufacturing data quality in academic studies are identified which cause estimates to vary by over 1000x (0.04 – 49 trillion liters/terawatt). Data issues are discussed and the need for accurate accounting of water resources (e.g., via continuous, updated information during PV manufacturing) is highlighted. The opportunity to reconfigure decommissioned thermoelectric sites to PV manufacturing is also explored. Finally, factors that influence PV manufacturing water intensity, from individual manufacturing steps to trends across the PV industry, are examined and water conservation opportunities are presented.

14 SOLAR ENERGY↗
DOE OSTI2024

The development of an augmented machine learning approach for the additive manufacturing of thermoelectric materials

Through the integration of machine learning (ML) techniques alongside additive manufacturing (AM) experimentation, we demonstrate an iterative process to rapidly predict laser-material interactions and melt pool geometries throughout the build parameter space for a bismuth telluride thermoelectric (TE) material. In doing so, we determined process parameters that created crack-free, highly dense (>99 %) n-type bismuth telluride (Bi 2 Te 2.7 Se 0.3 ) parts through laser powder bed fusion (LPBF). Furthermore, the ML-assisted understanding of the processing space allowed for the identification of build parameters that successfully yielded geometrically enhanced Bi 2 Te 2.7 Se 0.3 parts with reduced build times and no increase in experimental effort.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Electro-Optical Characterization of Arsenic-Doped CdSeTe and CdTe Solar Cell Absorbers Doped in-situ During Close Space Sublimation

Most contemporary device models predict that an acceptor concentration of at least 10^16 cm^-3 is required to reach an open circuit voltage of 1 V in polycrystalline CdTe-based solar cells. While copper has traditionally been used as the de facto p-type dopant in polycrystalline cadmium telluride (CdTe) and cadmium selenide telluride (CdSeTe), reaching high acceptor concentrations has proved to be challenging in such devices due to significant dopant compensation. The acceptor concentration in copper-doped CdTe and CdSeTe typically ranges from 10^13 to 10^15 cm^-3 and routinely exhibit low external radiative efficiencies below 0.01%, limiting their implied voltage (i.e., quasi-Fermi level splitting) to approximately 900 mV. As an alternative to copper, this work explores the use of arsenic as a p-type dopant for CdTe and CdSeTe. Using a novel technique in which a thin layer of arsenic-containing material is deposited and used as a reservoir for arsenic to diffuse into a front layer of previously undoped material, this contribution demonstrates that high external radiative efficiencies are achievable, a direct result of combined high acceptor concentrations and long minority-carrier lifetimes in the absorber. This leads to improved implied voltages, and indicates that As-doping represents a promising pathway towards improving the external voltage of CdSeTe/CdTe solar cells.

cadmium telluride↗
DOE OSTI2021

Calculation of the Thermodynamic Voltage Limit of CdSeTe Solar Cells

The first step to understand the origin of losses in any photovoltaic solar cell is to determine the fundamental thermodynamic efficiency and voltage limits of such a device. In this contribution, we detail techniques to calculate the voltage limit in the case of cadmium selenium telluride (CdSeTe) solar cells, and how approaches based on bandgap alone—i.e., the Shockley-Queisser approach with step-function absorptance—can overestimate the thermodynamic open-circuit voltage limit Voc,ideal . This is particularly true for arsenic-doped samples, which tend to exhibit below-bandgap absorptance.

absorptance↗
DOE OSTI2023

Accelerating Additive Manufacturing Process Design for Energy Conversion Materials using In-situ Sensing and Machine Learning

One promising candidate for manufacturing of the bismuth Telluride thermoelectric legs is laser powder bed fusion (LPBF) additive Manufacturing (AM). AM processing parameters highly influence the material properties, however current processing parameter development methods in AM are costly and time consuming. In-situ sensors allow for the capture of physically relevant process information on a layer-by-layer basis and will be used to aide process development. To optimize the AM process for the best thermoelectric performance, process variables, in-situ process sensor data and ex-situ material characterization data are collected. Several different interpretable machine learning (ML) approaches are used, and the performance of each method are assessed. Significant input process variables include laser focus, hatch spacing and laser power. The best performing models are used to determine the manufacturing parameters that maximize the power factor. AM of bismuth telluride material provides the ability to create complex geometries enabling more efficient energy conversion.

30 DIRECT ENERGY CONVERSION↗