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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS2003

Total Ionizing Dose Effects in MOS Oxides and Devices

The development of military and space electronics technology has traditionally been heavily influenced by the commercial semiconductor industry. The development of MOS technology, and particularly CMOS technology, as dominant commercial technologies has occurred entirely within the lifetime of the NSREC. For this reason, it is not surprising that the study of radiation interactions with MOS materials, devices and circuits has been a major theme of this conference for most of its history. The basic radiation problem in a MOS transistor is illustrated. The application of an appropriate gate voltage causes a conducting channel to form between the source and drain, so that current flows when the device is turned on. In Fig. lb, the effect of ionizing radiation is illustrated. Radiation-induced trapped charge has built up in the gate oxide, which causes a shift in the threshold voltage (that is, a change in the voltage which must be applied to turn the device on). If this shift is large enough, the device cannot be turned off, even at zero volts applied, and the device is said to have failed by going depletion mode.

Oldham, Timothy R.↗
DOE OSTI2026

Heat metrics and thresholds reshape population exposure and inequality signals

Extreme heat is intensifying worldwide, yet estimates of heat hazard and exposure inequality depend on both the heat metric and how extreme days are defined. Using summer 2022 across the Mediterranean, we quantify population heat exposure with four metrics—land surface temperature (LST), air temperature (Ta), heat index (HI), and wet-bulb globe temperature (WBGT)—under absolute (fixed-value) and relative (anomaly-based) thresholds. Under absolute thresholds, total heat exposure differs by more than two orders of magnitude across metrics (31.3 billion person-days for Ta vs 0.3 billion for HI). Geographic hotspots also diverge: WBGT concentrates in humid coastal North Africa (e.g. the Nile Delta), whereas Ta and LST are more widespread. Under relative thresholds, exposure totals converge and cross-metric hotspot agreement increases (e.g. Ta–WBGT top-tercile overlap increases from 10.7% to 29.0%), shifting hotspots toward densely populated southern Europe. Crucially, the exposure–deprivation relationship also reverses across threshold frameworks: absolute thresholds concentrate exposure in more deprived North Africa and the Middle East, whereas relative thresholds shift the burden toward less-deprived European cities. This sensitivity is decision-relevant: city rankings based on WBGT exposure duration are almost completely reordered when switching threshold frameworks. Threshold choice therefore systematically reshapes hotspot patterns and inequality signals. Reporting both absolute and relative exposures can reveal hidden hotspots and support more targeted heat-risk monitoring and intervention planning.

Mediterranean↗
DOE OSTI2020

Theory of the tertiary instability and the Dimits shift within a scalar model

The Dimits shift is the shift between the threshold of the drift-wave primary instability and the actual onset of turbulent transport in magnetized plasma. It is generally attributed to the suppression of turbulence by zonal flows, but developing a more detailed understanding calls for consideration of specific reduced models. The modified Terry--Horton system has been proposed by St-Onge [J. Plasma Phys. {\bf 83}, 905830504 (2017)] as a minimal model capturing the Dimits shift. Here, we use this model to develop an analytic theory of the Dimits shift and a related theory of the tertiary instability of zonal flows. We show that tertiary modes are localized near extrema of the zonal velocity $U(x)$, where $x$ is the radial coordinate. By approximating $U(x)$ with a parabola, we derive the tertiary-instability growth rate using two different methods and show that the tertiary instability is essentially the primary drift-wave instability modified by the local $U''$. Then, depending on $U''$, the tertiary instability can be suppressed or unleashed. The former corresponds to the case when zonal flows are strong enough to suppress turbulence (Dimits regime), while the latter corresponds to the case when zonal flows are unstable and turbulence develops. This understanding is different from the traditional paradigm that turbulence is controlled by the flow shear $U'$. Our analytic predictions are in agreement with direct numerical simulations of the modified Terry--Horton system.

fusion plasmas↗
DOE OSTI2020

Theory of the tertiary instability and the Dimits shift within a scalar model

The Dimits shift is the shift between the threshold of the drift-wave primary instability and the actual onset of turbulent transport in a magnetized plasma. It is generally attributed to the suppression of turbulence by zonal flows, but developing a more detailed understanding calls for consideration of specific reduced models. The modified Terry–Horton system has been proposed by St-Onge ( J. Plasma Phys. , vol. 83, 2017, 905830504) as a minimal model capturing the Dimits shift. Here, we use this model to develop an analytic theory of the Dimits shift and a related theory of the tertiary instability of zonal flows. We show that tertiary modes are localized near extrema of the zonal velocity $U(x)$ , where $x$ is the radial coordinate. By approximating $U(x)$ with a parabola, we derive the tertiary-instability growth rate using two different methods and show that the tertiary instability is essentially the primary drift-wave instability modified by the local $U'' \doteq {\rm d}^2 U/{\rm d} x^2 $ . Then, depending on $U''$ , the tertiary instability can be suppressed or unleashed. The former corresponds to the case when zonal flows are strong enough to suppress turbulence (Dimits regime), while the latter corresponds to the case when zonal flows are unstable and turbulence develops. This understanding is different from the traditional paradigm that turbulence is controlled by the flow shear $| {\rm d} U / {\rm d} x |$ . Our analytic predictions are in agreement with direct numerical simulations of the modified Terry–Horton system.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

High Mobility and Electrostatics in GeSn Quantum Wells With SiGeSn Barriers

GeSn is an emerging material with potential applications in next‐generation integrated optoelectronics and quantum information processing. While GeSn/SiGeSn quantum wells exhibit promising optical properties, their electrical transport characteristics and governing electrostatics in gated structures remain unexplored. Heterostructure field‐effect transistors are fabricated using GeSn/SiGeSn quantum wells and electronic transport properties of 2D holes are characterized. At 2 K, heterostructure field‐effect transistors with well/barrier compositions of Ge 0.945 Sn 0.055 /Si 0.03 Ge 0.93 Sn 0.04 and Ge 0.9 Sn 0.1 /Si 0.017 Ge 0.927 Sn 0.056 , show peak mobilities of 9000 and 19 000 cm 2 /Vs, respectively, the latter setting a record for the highest mobility reported for GeSn quantum wells with a Sn concentration around 6 % or greater. Remarkably, at low carrier densities, devices with a SiGeSn barrier exhibit mobilities several times higher than previously reported for GeSn quantum wells with a Ge barrier. This higher mobility contrasts with the expectation that alloy scattering from the barrier would reduce carrier mobility. Two mechanisms based on atom probe tomography data analyses are proposed: i) unintentionally improved SiGeSn/GeSn interface and/or ii) reduced alloy scattering from short‐range order. Significant current–voltage hysteresis is observed, with the effective threshold gate voltage shifting by more than 5 V, attributed to non‐equilibrium trapped charge at various interfaces within the SiGeSn heterostructure.

GeSn↗
DOE OSTI2025

Multivariate environmental and trait-based controls of transpiration in the Central Amazon Rainforest

Tropical forest tree mortality is increasing due to more severe droughts, yet our understanding of how tree traits and life strategies are linked to drought stress has been limited by measurement scarcity. The BIONTE (BIOmass and NuTrient Experiment) near Manaus, Brazil hosts one of the world’s largest sap flow installations, with sensors in 90 canopy trees across a wood density gradient monitored since June 2022. The 2023 El Niño drought provided a unique opportunity to evaluate how water availability impacts tree transpiration. An interpretable machine learning framework was used to study the complex interactions between transpiration and multiple environmental variables such as soil water availability and vapor pressure deficit (VPD), and how these interactions vary with wood density and individual trees. We found varying responses of transpiration from different trees during the El Niño drought. Transpiration generally increased with temperature, with stronger effects in wetter areas and in trees with low to medium wood density. However, this response was modulated by stomatal sensitivity to VPD, which constrained transpiration under high atmospheric demand, particularly in intermediate-moisture area. The inflection in transpiration rate at high temperatures (>32°C) underscores the role of stomatal and hydraulic regulation in limiting water loss and protecting trees from excessive evaporative demand. Analysis of soil water contribution to transpiration revealed unimodal patterns in wetter area, with peak contributions near 0.45 cm 3 cm -3 of surface soil water and declining or flat responses beyond that threshold, suggesting a shift from water- to energy-limited transpiration. In contrast, drier areas exhibited limited transpiration sensitivity to soil water conditions and minimal trait-based variation in VPD responses, indicating supply-limited conditions. Despite higher wood density trees being generally more resilient, this study shows diverse tree drought resilience, prompting further investigation into the specific traits and dynamics between environmental variables in regulating transpiration and other physiological processes in trees.

Drought↗
DOE OSTI2023

Mechanisms and Impacts of Earth System Tipping Elements

Tipping elements are components of the Earth system which may respond nonlinearly to anthropogenic climate change by transitioning toward substantially different long-term states upon passing key thresholds or “tipping points.” In some cases, such changes could produce additional greenhouse gas emissions or radiative forcing that could compound global warming. Improved understanding of tipping elements is important for predicting future climate risks and their impacts. Here we review mechanisms, predictions, impacts, and knowledge gaps associated with 10 notable Earth system components proposed to be tipping elements. We evaluate which tipping elements are approaching critical thresholds and whether shifts may manifest rapidly or over longer timescales. Some tipping elements have a higher risk of crossing tipping points under middle-of-the-road emissions pathways and will possibly affect major ecosystems, climate patterns, and/or carbon cycling within the 21st century. However, literature assessing different emissions scenarios indicates a strong potential to reduce impacts associated with many tipping elements through climate change mitigation. The studies synthesized in our review suggest most tipping elements do not possess the potential for abrupt future change within years, and some proposed tipping elements may not exhibit tipping behavior, rather responding more predictably and directly to the magnitude of forcing. Nevertheless, uncertainties remain associated with many tipping elements, highlighting an acute need for further research and modeling to better constrain risks.

58 GEOSCIENCES↗
DOE OSTI2023

The ecosystem wilting point defines drought response and recovery of a Quercus‐Carya forest

Abstract Soil and atmospheric droughts increasingly threaten plant survival and productivity around the world. Yet, conceptual gaps constrain our ability to predict ecosystem‐scale drought impacts under climate change. Here, we introduce the ecosystem wilting point (Ψ EWP ), a property that integrates the drought response of an ecosystem's plant community across the soil–plant–atmosphere continuum. Specifically, Ψ EWP defines a threshold below which the capacity of the root system to extract soil water and the ability of the leaves to maintain stomatal function are strongly diminished. We combined ecosystem flux and leaf water potential measurements to derive the Ψ EWP of a Quercus‐Carya forest from an “ecosystem pressure–volume (PV) curve,” which is analogous to the tissue‐level technique. When community predawn leaf water potential (Ψ pd ) was above Ψ EWP (=−2.0 MPa), the forest was highly responsive to environmental dynamics. When Ψ pd fell below Ψ EWP , the forest became insensitive to environmental variation and was a net source of carbon dioxide for nearly 2 months. Thus, Ψ EWP is a threshold defining marked shifts in ecosystem functional state. Though there was rainfall‐induced recovery of ecosystem gas exchange following soaking rains, a legacy of structural and physiological damage inhibited canopy photosynthetic capacity. Although over 16 growing seasons, only 10% of Ψ pd observations fell below Ψ EWP , the forest is commonly only 2–4 weeks of intense drought away from reaching Ψ EWP , and thus highly reliant on frequent rainfall to replenish the soil water supply. We propose, based on a bottom‐up analysis of root density profiles and soil moisture characteristic curves, that soil water acquisition capacity is the major determinant of Ψ EWP , and species in an ecosystem require compatible leaf‐level traits such as turgor loss point so that leaf wilting is coordinated with the inability to extract further water from the soil.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2024

Feedbacks Regulating the Salinization of Coastal Landscapes

The impact of saltwater intrusion on coastal forests and farmland is typically understood as sea-level-driven inundation of a static terrestrial landscape, where ecosystems neither adapt to nor influence saltwater intrusion. Yet recent observations of tree mortality and reduced crop yields have inspired new process-based research into the hydrologic, geomorphic, biotic, and anthropogenic mechanisms involved. We review several negative feedbacks that help stabilize ecosystems in the early stages of salinity stress (e.g., reduced water use and resource competition in surviving trees, soil accretion, and farmland management). However, processes that reduce salinity are often accompanied by increases in hypoxia and other changes that may amplify saltwater intrusion and vegetation shifts after a threshold is exceeded (e.g., subsidence following tree root mortality). This conceptual framework helps explain observed rates of vegetation change that are less than predicted for a static landscape while recognizing the inevitability of large-scale change.

54 ENVIRONMENTAL SCIENCES↗
NASA NTRS1971

Radiation damage in MOS integrated circuits, Part 1

Complementary and p-channel MOS integrated circuits made by four commercial manufacturers were investigated for sensitivity to radiation environment. The circuits were irradiated with 1.5 MeV electrons. The results are given for electrons and for the Co-60 gamma radiation equivalent. The data are presented in terms of shifts in the threshold potentials and changes in transconductances and leakages. Gate biases of -10V, +10V and zero volts were applied to individual MOS units during irradiation. It was found that, in most of circuits of complementary MOS technologies, noticable changes due to radiation appear first as increased leakage in n-channel MOSFETs somewhat before a total integrated dose 10 to the 12th power electrons/sg cm is reached. The inability of p-channel MOSFETs to turn on sets in at about 10 to the 13th power electrons/sq cm. Of the circuits tested, an RCA A-series circuit was the most radiation resistant sample.

Danchenko, V.↗
NASA NTRS1976

Prediction and measurement of radiation damage to CMOS devices on board spacecraft

The initial results obtained from the Complementary Metal Oxide Semiconductors Radiation Effects Measurement experiment are presented. Predictions of radiation damage to C-MOS devices are based on standard environment models and computational techniques. A comparison of the shifts in CMOS threshold potentials, that is, those measured in space to those obtained from the on the ground simulation experiment with Co 60, indicated that the measured space damage is greater than predicted by a factor of two for shields thicker than 100 mils (2.54 mm), but agrees well with predictions for the thinner shields.

Cliff, R. A.↗
NASA NTRS1976

Prediction and measurement of radiation damage to CMOS devices on board spacecraft

The CMOS Radiation Effects Measurement (CREM) experiment is presently being flown on the Explorer-55. The purpose of the experiment is to evaluate device performance in the actual space radiation environment and to correlate the respective measurements to on-the-ground laboratory irradiation results. The experiment contains an assembly of C-MOS and P-MOS devices shielded in front by flat slabs of aluminum and by a practically infinite shield in the back. Predictions of radiation damage to C-MOS devices are based on standard environment models and computational techniques. A comparison of the shifts in CMOS threshold potentials, that is, those measured in space to those obtained from the on-the-ground simulation experiment with Co-60, indicates that the measured space damage is smaller than predicted by about a factor of 2-3 for thin shields, but agrees well with predictions for thicker shields.

Cliff, R. A.↗
NASA NTRS1981

Activation energies of thermal annealing of radiation-induced damage in n- and p-channels of CMOS integrated circuits. II

The procedures described by Danchenko et al. (1980) are applied to devices of RCA's Z-process (100,000 rad-hard). A thermal annealing investigation of the Z-process reveals an annealing behavior of the p-channels that is anomalous when compared with the p-channels of the commercial and J-processes. It is noted that the thermal annealing-induced shift of the threshold potential extends far below the original value; this necessitated the development of a new mathematical treatment, the treatment presented in the paper.

Danchenko, V.↗
NASA NTRS1982

Thermal annealing of radiation damage in CMOS ICs in the temperature range -140 C to +375 C

Annealing of radiation damage was investigated in the commercial, Z- and J-processes of the RCA CD4007A ICs in the temperature range from -140 C to +375 C. Tempering curves were analyzed for activation energies of thermal annealing, following irradiation at -140 C. It was found that at -140 C, the radiation-induced shifts in the threshold potentials were similar for all three processes. The radiation hardness of the Z- and J-process is primarily due to rapid annealing of radiation damage at room temperature. In the region -140 to 20 C, no dopant-dependent charge trapping is seen, similar to that observed at higher temperatures. In the unbiased Z-process n-channels, after 1 MeV electron irradiation, considerable negative charge remains in the gate oxide.

Danchenko, V.↗
NASA NTRS1985

Anti-swirling demonstration

Fluid in bearings and seals, involved in motion due to shaft rotation and generating fluid dynamic forces, represents the well recognized source of instability known as whirl and whip. It is characterized by shaft forward circular precession at subysnchronous frequency. Control of the flow pattern in the bearing/seal clearance may enhance the stability. The rotor system demonstrates the dynamic effect of perturbation of the flow pattern in a seal gap by blowing compressed air in the rotor tangential direction. This effect results in shifting the rotor threshold of stability to a higher value of rotative speed when the air jet direction opposes rotation, and to a lower value of rotative speed when the air jet direction coincides with rotation. This effect implies that an unstable rotor can be stabilized by blowing air in the direction opposite to rotation. This technique is known as anti-swirl.

Muszynska, A.↗
NASA NTRS1988

Application of linear response theory to experimental data of simultaneous radiation and annealing response of a CMOS device

Results from the application of linear response theory are compared to experimental data from simultaneous radiation and annealing response of a CMOS device. In particular, a method is applied which was developed earlier to determine the characteristic time, t(0), as well as the parameters A and C in the 1n(t) dependence of the linear response function R(t) = -C + A1n(1-t/t(0)). The method is based on a study of the linear response for t being much less than t(0), when R(t) can be expanded in a power series of t: R(t) = R(0) + R'(0)t + 1/2R''(0)t-squared + 1/3R'''(0)t-cubed + ..., where R'(0) and R''(0) are, respectively, the first and second derivatives of R with respect to t. To find the linear response, R(t-t') is substituted in the form of this power series equation into a general equation for the shift of the threshold potential. To test the method, irradiation experiments were conducted on RCA 10(6) rad-hard CMOS IC's. A dose rate of approximately 130 rads/min was used. An IC was irradiated with Co-60 gamma rays for several hours, taking measurements of the threshold potential for one n-channel and one p-channel transistor every ten minutes. For the p-channel transistor, t(0) was found to be approximately 110 min and for the n-channel, t(0) was approximately 70 min. For the p-channel, the theoretical curve deviates from the experimental points only after 70 min; for the n-channel, the deviation takes place after 45 min. Additional findings are discussed and the application of the method to pure annealing is described.

Litovchenko, V.↗
NASA NTRS1991

Long-term prediction test procedure for most ICs, based on linear response theory

Experimentally, thermal annealing is known to be a factor which enables a number of different integrated circuits (IC's) to recover their operating characteristics after suffering radiation damage in the space radiation environment; thus, decreasing and limiting long term cumulative total-dose effects. This annealing is also known to be accelerated at elevated temperatures both during and after irradiation. Linear response theory (LRT) was applied, and a linear response function (LRF) to predict the radiation/annealing response of sensitive parameters of IC's for long term (several months or years) exposure to the space radiation environment were constructed. Compressing the annealing process from several years in orbit to just a few hours or days in the laboratory is achieved by subjecting the IC to elevated temperatures or by increasing the typical spaceflight dose rate by several orders of magnitude for simultaneous radiation/annealing only. The accomplishments are as follows: (1) the test procedure to make predictions of the radiation response was developed; (2) the calculation of the shift in the threshold potential due to the charge distribution in the oxide was written; (3) electron tunneling processes from the bulk Si to the oxide region in an MOS IC were estimated; (4) in order to connect the experimental annealing data to the theoretical model, constants of the model of the basic annealing process were established; (5) experimental data obtained at elevated temperatures were analyzed; (6) time compression and reliability of predictions for the long term region were shown; (7) a method to compress test time and to make predictions of response for the nonlinear region was proposed; and (8) nonlinearity of the LRF with respect to log(t) was calculated theoretically from a model.

Litovchenko, V.↗