Search NASA⌕ Search

SEARCH · Search NASA

Results for “THz frequencies”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS1988

Microwave and millimeter-wave resonant-tunneling devices

Resonant-tunneling devices in microelectronic component form, whose structure is the electron analog of a Fabry-Perot resonator, encompass oscillators, self-oscillating mixers, and harmonic multipliers. The negative differential resistance characteristic of these devices has been obtained at room temperature, and resonant-tunneling transistors capable of operation in the THz-frequency range appear to be feasible. Three-terminal resonant-tunneling device development is in its infancy, as is that of devices for digital applications.

Sollner, T. C. L. Gerhard↗
NASA NTRS1991

International Symposium on Space Terahertz Technology, 1st, University of Michigan, Ann Arbor, Mar. 5, 6, 1990, Proceedings

Problems, proposed solutions, and recent results related to the development of solid-state oscillators, detectors, mixers, diode multipliers, and antennas at THz frequencies are addressed. Individual topics considered include: submillimeter heterodyne remote sensing of upper atmospheric gases, planar dipole array antenna with an elliptical lens, twin slot antenna structures integrated with microbolometer detectors for 94-GHz imaging. Also discussed are: quantum-well and quantum-barrier diodes for generating submillimeter wave power, planar Schottky barrier mixer diodes for space applications at submillimeter wavelengths, GaAs Schottky barrier varactor diodes for submillimeter wavelength power generation, planar doped barrier devices for subharmonic mixers.

Ulaby, Fawwaz↗
NASA NTRS1993

Superconducting terahertz mixer using a transition-edge microbolometer

We present a new device concept for a mixer element for THz frequencies. This uses a superconducting transition-edge microbridge biased at the center of its superconducting transition near 4.2 K. It is fed from an antenna or waveguide structure. Power from a local oscillator and an RF signal produce a temperature and resulting resistance variation at the difference frequency. The new aspect is the use of a very short bridge in which rapid (less than 0.1 ns) outdiffusion of hot electrons occurs. This gives large intermediate frequency (IF) response. The mixer offers about 4 GHz IF bandwidth, about 80 ohm RF resistive impedance, good match to the IF amplifier, and requires only 1-20 nW of local oscillator power. The upper RF frequency is determined by antenna or waveguide properties. Predicted mixer conversion efficiency is 1/8, and predicted double-sideband receiver noise temperatures are 260 and 90 K for transition widths of 0.1 and 0.5 Tc, respectively.

Prober, D. E.↗
NASA NTRS1998

Ultrafast Modulation of Semiconductor Lasers Through a Terahertz Field

We demonstrate, by means of numerical simulation, a new mechanism to modulate and switch semiconductor lasers at THz and sub-THz frequency rates. A sinusoidal terahertz field applied to a semiconductor laser heats the electron-hole plasma and consequently modifies the optical susceptibility. This allows an almost linear modulation of the output power of tile semiconductor laser and leads to a faithful reproduction of the terahertz-field waveform in the emitted laser intensity.

Ning, Cun-Zheng↗
NASA NTRS2000

Sub-Micron Long HTS Ho Electron Mixers

The hot-electron bolometer mixer made from a high-T, superconductor (HTS) was introduced recently as an alternative to a Schottky mixer at THz frequencies. The performance of the mixer depends on the total thermal conductance for heat removal from the phonon sub-system due to either length-dependent phonon diffusion or phonon escape to the substrate. We have measured both the length and temperature dependencies of the IF bandwidth of the mixers fabricated from 25-35 mn thick YBCO films on MgO and sapphire substrates. The films were grown by a laser deposition technique and electron-beam lithography was used to define bridge lengths down to 50 nm. Mixer measurements were done using signal frequencies in the range of 1-100 GHz. For 50 nm and 400 nm long devices on MgO, the 3-dB bandwidth was about 100 MHz. At temperatures below 60 K, the hot-electron plateau was clearly seen starting around 2-3 GHz. At temperatures above 70 K, the flux-flow effects begin to dominate and the IF bandwidth increases to 1-8 GHz, while the conversion efficiency drops by several dB. This temperature dependence of the IF bandwidth can account for previously reported unexpectedly high bandwidth of HTS mixers.

Harnack, 0.↗
NASA NTRS2001

Characterization of a Multilayered Dielectric Transmissive Phase Modulator

We describe a multilayered dielectric stack configuration designed specifically for use as a transmissive phase modulator for broadband optical signals. Applications for this device range from full aperture wavefront correction to nonmechanical beam steering arrays for free space optical communication links. Our implementation employs alternating GaAs and AlAs layers of varying thickness on a GaAs substrate to create a bandpass region of high average transmission centered about the one micrometer wavelength. Within this transmission bandpass, the phase component of the complex transmission coefficient varies in a near-linear fashion with respect to wavelength. The transmission bandpass is designed to have a bandwidth of 21.0 nm (or 6.3THz frequency bandwidth) and to have an edge-to-edge phase change of greater than 47T radians. Modification of the stack materials' optical properties causes the transmission profile to shift spectrally, resulting in a phase modulation for bands of transmitted frequencies. Our broadband phase modulator imparts up to a full-cycle of phase modulation with low loss and low group velocity dispersion. We identify several methods for implementing the requisite modulation, including refractive index modulation through free carrier injection and optical path length modulation through variation in angle of incidence. At least one sample comprising 91 alternating layers has been fabricated to exhibit the bandpass properties required for optical signal phase modulation. We experimentally characterize the sample using an interferometer and spectrometer to measure the transmitted signal spectrum and relative phase modulation. We compare the experimental data to computational predictions and discuss the results.

Keys, Andrew S.↗
NASA NTRS2001

Electromagnetic Modeling of Distributed-Source-Excitation of Coplanar Waveguides: Applications to Traveling-Wave Photomixers

In this work an electromagnetic model and subsequent design is presented for a traveling-wave, coplanar waveguide (CPW) based source that will operate in the THz frequency regime. The radio frequency (RF) driving current is a result of photoexcitation of a thin GaAs membrane using two frequency-offset lasers. The GaAs film is grown by molecular-beam-epitaxy (MBE) and displays sub-ps carrier lifetimes which enable the material conductivity to be modulated at a very high rate. The RF current flows between electrodes deposited on the GaAs membrane which are biased with a DC voltage source. The electrodes form a CPW and are terminated with a double slot antenna that couples the power to a quasi-optical system. The membrane is suspended above a metallic reflector to launch all radiation in one direction. The theoretical investigation and consequent design is performed in two steps. The first step consists of a direct evaluation of the magnetic current distribution on an infinitely extended coplanar waveguide excited by an impressed electric current distributed over a finite area. The result of the analysis is the difference between the incident angle of the laser beams and the length of the excited area that maximizes the RF power coupled to the CPW. The optimal values for both parameters are found as functions of the CPW and membrane dimensions as well as the dielectric constants of the layers. In the second step, a design is presented of a double slot antenna that matches the CPW characteristic impedance and gives good overall performance. The design is presently being implemented and measurements will soon be available.

Pasqualini, Davide↗
NASA NTRS2001

Traveling-Wave Membrane Photomixers

Traveling-wave photomixers have superior performance when compared with lumped area photomixers in the 1 to 3 THz frequency range. Their large active area and distributed gain mechanism assure high thermal damage threshold and elimination of the capacitive frequency roll-off. However, the losses experienced by the radio frequency wave traveling along the coplanar strips waveguide (due to underlying semi-infinite GaAs substrate) were a serious drawback. In this paper we present device designs and an experimental setup that make possible the realization of photomixers on membranes which eliminate the losses.

Wyss, R. A.↗
NASA NTRS1998

Ultrafast Modulation and Switching of Quantum-Well Lasers using Terahertz Fields

Modulation and switching of semiconductor lasers are important for laser-based information technology. Typically the speed of modulation and switching is limited by interband processes such as stimulated and spontaneous recombinations which occur on a nanosecond time scale. This is why the diode laser modulation has been restricted to tens of GHz. Modulation at higher speed is highly desirable as the information technology enters into the so-called tera-era. In this paper, we study the possibility of utilizing THz-field-induced plasma heating to modulate quantum-well lasers. This is a timely study since, with the advancement of THz solid-state sources and free-electron lasers, THz physics and related technology is currently coming out of its infancy. The investigation of interplaying THz and optical fields is also of intruiging fundamental interest. First, we introduce theoretical plasma heating results for the quantum-well optical amplifier in the presense of an intense half-cycle THz pulse. The heated carrier distributions are then utilized to calculate the THz-pulse-induced change in refractive index and gain profile. Since the electron-hole-plasma is heated using intraband transitions, we circumvent the usual complications due to an overall change in density, and the nonlinear recovery is governed solely by the carrier-LO-phonon interactions, typically 5 ps for a complete recovery. This procedure implies THz and sub-THz switching and recovery rates, respectively; using either gain modulation or index modulation. Plasma heating via steady-state THz fields is also studied. Finally, numerical simulation of a coupled set of equations to investigate the THz modulation based on a simplified model for quantum-well lasers is presented. Our results show that a semiconductor laser can be modulated at up to 1 THz with little distortion with a THz field amplitude at the order of a few kV/cm. Laser responses to a change in THz frequency will be shown. Constraints, practicalities, and applications will be discussed.

Ning, Cun-Zheng↗
NASA NTRS2011

Compact Submillimeter-Wave Receivers Made with Semiconductor Nano-Fabrication Technologies

Advanced semiconductor nanofabrication techniques are utilized to design, fabricate and demonstrate a super-compact, low-mass (<10 grams) submillimeter-wave heterodyne front-end. RF elements such as waveguides and channels are fabricated in a silicon wafer substrate using deep-reactive ion etching (DRIE). Etched patterns with sidewalls angles controlled with 1 deg precision are reported, while maintaining a surface roughness of better than 20 nm rms for the etched structures. This approach is being developed to build compact 2-D imaging arrays in the THz frequency range.

Silicon micromachining↗
NASA NTRS2013

Silicon Micromachined Microlens Array for THz Antennas

5 5 silicon microlens array was developed using a silicon micromachining technique for a silicon-based THz antenna array. The feature of the silicon micromachining technique enables one to microfabricate an unlimited number of microlens arrays at one time with good uniformity on a silicon wafer. This technique will resolve one of the key issues in building a THz camera, which is to integrate antennas in a detector array. The conventional approach of building single-pixel receivers and stacking them to form a multi-pixel receiver is not suited at THz because a single-pixel receiver already has difficulty fitting into mass, volume, and power budgets, especially in space applications. In this proposed technique, one has controllability on both diameter and curvature of a silicon microlens. First of all, the diameter of microlens depends on how thick photoresist one could coat and pattern. So far, the diameter of a 6- mm photoresist microlens with 400 m in height has been successfully microfabricated. Based on current researchers experiences, a diameter larger than 1-cm photoresist microlens array would be feasible. In order to control the curvature of the microlens, the following process variables could be used: 1. Amount of photoresist: It determines the curvature of the photoresist microlens. Since the photoresist lens is transferred onto the silicon substrate, it will directly control the curvature of the silicon microlens. 2. Etching selectivity between photoresist and silicon: The photoresist microlens is formed by thermal reflow. In order to transfer the exact photoresist curvature onto silicon, there needs to be etching selectivity of 1:1 between silicon and photoresist. However, by varying the etching selectivity, one could control the curvature of the silicon microlens. The figure shows the microfabricated silicon microlens 5 x5 array. The diameter of the microlens located in the center is about 2.5 mm. The measured 3-D profile of the microlens surface has a smooth curvature. The measured height of the silicon microlens is about 280 microns. In this case, the original height of the photoresist was 210 microns. The change was due to the etching selectivity of 1.33 between photoresist and silicon. The measured surface roughness of the silicon microlens shows the peak-to-peak surface roughness of less than 0.5 microns, which is adequate in THz frequency. For example, the surface roughness should be less than 7 microns at 600 GHz range. The SEM (scanning electron microscope) image of the microlens confirms the smooth surface. The beam pattern at 550 GHz shows good directivity.

Lee, Choonsup↗
NASA NTRS2017

The Advanced Microwave Radiometer – Climate Quality (AMR-C) Instrument for Sentinel-6

The Advanced Microwave Radiometer – Climate Quality (AMR-C) is designed to measure the path delay due to atmospheric water vapor along Sentinel-6 altimeter path over one decade. The AMR-C receiver is based on heritage from previous AMR instruments with the addition of a THz-frequency radiometer, the High Resolution Microwave Radiometer (HRMR), for improved coastal zone accuracy and a Supplemental Calibration System (SCS) to meet level 3 requirements that the path delay error due to the altimeter-derived sea surface height be less at 0.8 cm and the path delay stability be maintained to 0.7 mm averaged over a 1-year time period.

Maiwald, Frank↗
DOE OSTI2023

Laser Characterization of Optically Smooth BREAD parts

The Broadband Reflector Experiment for Axion Detection is a dish antenna experiment probing the axion and dark photon parameter space in the [1 μeV, 1 eV] mass range, or [.02, 200] THz frequency range. In the pilot design for the InfraBREAD model, the dish antenna includes an optically smooth coaxial parabolic reflector to focus incoming photons in the near Infrared spectrum, created by the spontaneous photoconversion of axions and dark photons, onto a Superconducting Nanowire Single Photon Detector at the focus point of the reflector. As the pilot begins as a dark photon detector, sensitivity estimates hypothesize that it could cover unprobed parameter space in the search for the dark photon. Because of this, it is of critical importance that the reflector and SNSPD be placed at the correct points in the dish antenna, as previous work has shown that in addition to the focal spot of the photons being smeared to an area larger than the SNSPD, detection efficiency is s ensitive to shifts on the millimeter scale. In order to constrain this barrier to efficiency, the reflector had its focal spot, roughness, and length of surface waves measured by lasers in an optical bench setup. Results show the focal point diverging slightly from its theorized position in the antenna, while uncertainty in the height at which the detector should be placed was constrained to 10s of microns, the uncertainty in radial position could not be constrained to smaller than the detector given the methods used. Results for the roughness and surface wavelength show that the reflector was uniformly machined in a diamond-turning process used to fabricate optically smooth parts, as well as support a roughly 90% detection efficiency, reinforcing the sensitivity estimates presented.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
NASA NTRS2009

Biasable Subharmonic Membrane Mixer for 520 to 600 GHz

The figure shows a biasable subharmonic mixer designed to operate in the frequency range from 520 to 600 GHz. This mixer is a prototype of low-power mixers needed for development of wideband, high-resolution spectrometers for measuring spectra of molecules in the atmospheres of Earth, other planets, and comets in the frequency range of 400 to 700 GHz. Three considerations dictated the main features of the design: It is highly desirable to operate the spectrometers at or slightly below room temperature. This consideration is addressed by choosing Schottky diodes as the frequency-mixing circuit elements because of all mixer diodes, Schottky diodes are the best candidates for affording sufficient sensitivity at or slightly below room-temperature range. The short wavelengths in the intended operating-frequency range translate to stringent requirements for precision of fabrication and assembly of the circuits; these requirements are even more stringent for wide-bandwidth circuits. This consideration is addressed in two ways: (1) As much as possible of the mixer circuitry is fabricated in the form of a monolithic integrated circuit on a GaAs membrane, employing a modified version of a process used previously to fabricate a non-subharmonic mixer for a frequency of 2.5 THz and frequency multipliers for frequencies up to 2 THz. (2) The remainder of the circuitry is precision machined into a waveguide block that holds the GaAs integrated circuit.

Schlecht, Erich↗
DOE OSTI2024

Searching for high-frequency gravitational waves with phonons

The gravitational wave (GW) spectrum at frequencies above a kHz is a largely unexplored frontier. We show that detectors with sensitivity to single-phonon excitations in crystal targets can search for GWs with frequencies, 1 THz ≲ f ≲ 100 THz , corresponding to the range of optical phonon energies, 1 meV ≲ ω ≲ 100 meV . Such detectors are already being built to search for light dark matter (DM), and therefore sensitivity to high-frequency GWs will be achieved as a byproduct. We begin by deriving the absorption rate of a general GW signal into single phonons. We then focus on carefully defining the detector sensitivity to monochromatic and chirp signals, and compute the detector sensitivity for many proposed light DM detection targets. The detector sensitivity is then compared to the signal strength of candidate high-frequency GW sources, e.g., superradiant annihilation and black hole inspiral, as well as other recent detector proposals in the 1 MHz ≲ f ≲ 100 THz frequency range. With a judicious choice of target materials, a collection of detectors could optimistically achieve sensitivities to monochromatic signals with h 0 ∼ 10 − 23 − 10 − 25 over 1 THz ≲ f ≲ 100 THz . Published by the American Physical Society 2024

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗