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Development of SIS Mixers for 1 THz
SIS heterodyne mixer technology based on niobium tunnel junctions has now been pushed to frequencies over 1 THz, clearly demonstrating that the SIS junctions are capable of mixing at frequencies up to twice the energy gap frequency (4 Delta/h). However, the performance degrades rapidly above the gap frequency of niobium (2 Delta/h approx. 700 GHz) due to substantial ohmic losses in the on-chip tuning circuit. To solve this problem, the tuning circuit should be fabricated using a superconducting film with a larger energy gap, such as NbN; unfortunately, NbN films often have a substantial excess surface resistance in the submillimeter band. In contrast, the SIS mixer measurements we present in this paper indicate that the losses for NbTiN thin films can be quite low.
Terabit Wireless Communication Challenges
This presentation briefly discusses a research effort on Terabit Wireless communication systems for possible space applications. Recently, terahertz (THz) technology (300-3000 GHz frequency) has attracted a great deal of interest from academia and industry. This is due to a number of interesting features of THz waves, including the nearly unlimited bandwidths available, and the non-ionizing radiation nature which does not damage human tissues and DNA with minimum health threat. Also, as millimeter-wave communication systems mature, the focus of research is, naturally, moving to the THz range. Many scientists regard THz as the last great frontier of the electromagnetic spectrum, but finding new applications outside the traditional niches of radio astronomy, Earth and planetary remote sensing, and molecular spectroscopy particularly in biomedical imaging and wireless communications has been relatively slow. Radiologists find this area of study so attractive because t-rays are non-ionizing, which suggests no harm is done to tissue or DNA. They also offer the possibility of performing spectroscopic measurements over a very wide frequency range, and can even capture signatures from liquids and solids. According to Shannon theory, the broad bandwidth of the THz frequency bands can be used for terabit-per-second (Tb/s) wireless communication systems. This enables several new applications, such as cell phones with 360 degrees autostereoscopic displays, optic-fiber replacement, and wireless Tb/s file transferring. Although THz technology could satisfy the demand for an extremely high data rate, a number of technical challenges need to be overcome before its development. This presentation provides an overview the state-of-the- art in THz wireless communication and the technical challenges for an emerging application in Terabit wireless systems. The main issue for THz wave propagation is the high atmospheric attenuation, which is dominated by water vapor absorption in the THz frequency band. The technical challenges in design such a system and the techniques to overcome the challenges will be discussed in this presentation.
Capability of THz sources based on Schottky diode frequency multiplier chains
We have developed and tesed a number of fixed-tuned GaAs Schottky diode frequency doubler and tripler designs covering over 50 percent of the 100 - 2000 GHz band, with best measured 120 K peak efficiencies ranging from 39 percent for 190 GHz doubler to 0.94 percent for a 1800 GHz tripler.
Direct frequency measurements of transitions at 520 THz /576 nm/ in iodine and 260 THz /1.15 micron/ in neon
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Fabrication of High-T(sub c) Hot-Electron Bolometric Mixers for Terahertz Applications
Superocnducting hot-electron bolometers (HEB) represent a promising candidate for heterodyne mixing at frequencies exceeding 1 THz. Nb HEB mixers offer performance competitive with tunnel junctions without the frequency limit imposed by the superconducting energy gap.
Dielectric Properties of Conductively Loaded Polyimides in the Far Infrared
The dielectric properties of selected conductively-loaded polyimide samples are characterized in the microwave through far-infrared wavebands. These materials, belonging to the Vespel family, are more readily formed by direct machining than their ceramic-loaded epoxy counterparts and present an interesting solution for realizing absorptive optical control structures. Measurements spanning a spectral range from 1 to 600 cm(exp −1) (0.03–18 THz) were performed and used in parametrization of the media’s dielectric function at frequencies below ≈3 THz.
An All-Solid-State, Room-Temperature, Heterodyne Receiver for Atmospheric Spectroscopy at 1.2 THz
Heterodyne receivers at submillimeter wavelengths have played a major role in astrophysics as well as Earth and planetary remote sensing. All-solid-state heterodyne receivers using both MMIC (monolithic microwave integrated circuit) Schottky-diode-based LO (local oscillator) sources and mixers are uniquely suited for long-term planetary missions or Earth climate monitoring missions as they can operate for decades without the need for any active cryogenic cooling. However, the main concern in using Schottky-diode-based mixers at frequencies beyond 1 THz has been the lack of enough LO power to drive the devices because 1 to 3 mW are required to properly pump Schottky diode mixers. Recent progress in HEMT- (high-electron-mobility- transistor) based power amplifier technology, with output power levels in excess of 1 W recently demonstrated at W-band, as well as advances in MMIC Schottky diode circuit technology, have led to measured output powers up to 1.4 mW at 0.9 THz. Here the first room-temperature tunable, all-planar, Schottky-diode-based receiver is reported that is operating at 1.2 THz over a wide (≈20%) bandwidth. The receiver front-end (see figure) consists of a Schottky-diode-based 540 to 640 GHz multiplied LO chain (featuring a cascade of W-band power amplifiers providing around 120 to 180 mW at W-band), a 200-GHz MMIC frequency doubler, and a 600-GHz MMIC frequency tripler, plus a biasable 1.2-THz MMIC sub-harmonic Schottky-diode mixer. The LO chain has been designed, fabricated, and tested at JPL and provides around 1 to 1.5 mW at 540 o 640 GHz. The sub-harmonic mixer consists of two Schottky diodes on a thin GaAs membrane in an anti-parallel configuration. An integrated metal insulator metal (MIM) capacitor has been included on-chip to allow dc bias for the Schottky diodes. A bias voltage of around 0.5 V/diode is necessary to reduce the LO power required down to the 1 to 1.5 mW available from the LO chain. The epilayer thickness and doping profiles have been specifically optimized to maximize the mixer performance beyond 1 THz. The measured DSB noise temperatures and conversion losses of the receiver are 2,000 to 3,500 K and 12 to 14 dB, respectively, at 120 K, and 4,000 to 6,000 K and 13 to 15 dB, respectively, at 300 K. These results establish the state-of-the-art for all-solid-state, all-planar heterodyne receivers at 1.2 THz operating at either room temperature or using passive cooling only. Since no cryogenic cooling is needed, the receiver is eminently suited to atmospheric heterodyne spectroscopy of the outer planets and their moons.
Carbon-Nanotube Schottky Diodes
Schottky diodes based on semiconducting single-walled carbon nanotubes are being developed as essential components of the next generation of submillimeter-wave sensors and sources. Initial performance predictions have shown that the performance characteristics of these devices can exceed those of the state-of-the-art solid-state Schottky diodes that have been the components of choice for room-temperature submillimeter-wave sensors for more than 50 years. For state-of-the-art Schottky diodes used as detectors at frequencies above a few hundred gigahertz, the inherent parasitic capacitances associated with their semiconductor junction areas and the resistances associated with low electron mobilities limit achievable sensitivity. The performance of such a detector falls off approximately exponentially with frequency above 500 GHz. Moreover, when used as frequency multipliers for generating signals, state-of-the-art solid-state Schottky diodes exhibit extremely low efficiencies, generally putting out only micro-watts of power at frequencies up to 1.5 THz. The shortcomings of the state-of-the-art solid-state Schottky diodes can be overcome by exploiting the unique electronic properties of semiconducting carbon nanotubes. A single-walled carbon nanotube can be metallic or semiconducting, depending on its chirality, and exhibits high electron mobility (recently reported to be approx.= 2x10(exp 5)sq cm/V-s) and low parasitic capacitance. Because of the narrowness of nanotubes, Schottky diodes based on carbon nanotubes have ultra-small junction areas (of the order of a few square nanometers) and consequent junction capacitances of the order of 10(exp -18) F, which translates to cutoff frequency >5 THz. Because the turn-on power levels of these devices are very low (of the order of nano-watts), the input power levels needed for pumping local oscillators containing these devices should be lower than those needed for local oscillators containing state-of-the-art solid-state Schottky diodes.
2.5 THz GaAs Monolithic Membrane-Diode Mixer A New Planar Circut Realization for High Frequency Semiconductor Components
A novel GaAs monolithic membrane-diode (MOMED) structure has been developed and implemented as a 2.5 THz Schottky diode mixer.
Superconducting Nb DHEB Mixer Arrays for Far-Infrared Spectroscopy
We are developing a heterodyne focal plane array with up to eight elements to study lines of the interstellar medium and planetary atmospheres with frequencies of 2 THz and above. Our fabrication process utilizes selective ion milling techniques to produce Nb Diffusion-Cooled Hot Electron Bolometric (DHEB) mixers from a bilayer thin film of Au/Nb deposited on a silicon substrate. A micro-bridge of 10 nm thick Nb forms the HEB device. The first generation of devices with lateral dimensions of 100 nm by 80 nm were fabricated at the feed of a broadband spiral antenna with a frequency response designed for up to 16 THz. Harmonic multiplier sources becoming available within the next few years should have sufficient power to provide a local-oscillator source for small-format, quasi-optically coupled arrays of these mixers. First generation devices measured at our laboratory have demonstrated a critical temperature (Tc) of 4.8 K with a 0.5 K transition width. These DHEB mixers are expected to have an optimum operational temperature of 1.8-2.0 K. The current four element array mixer block will ultimately be replaced by a dual polarization slot-ring array configuration with up to eight elements.
All-Solid-State 2.45-to-2.78-THz Source
Sources in the THz range are required in order for NASA to implement heterodyne instruments in this frequency range. The source that has been demonstrated here will be used for an instrument on the SOFIA platform as well as for upcoming astrophysics missions. There are currently no electronic sources in the 2 3- THz frequency range. An electronically tunable compact source in this frequency range is needed for lab spectroscopy as well as for compact space-deployable heterodyne receivers. This solution for obtaining useful power levels in the 2 3- THz range is based on utilizing power-combined multiplier stages. Utilizing power combining, the input power can be distributed between different multiplier chips and then recombined after the frequency multiplication. A continuous wave (CW) coherent source covering 2.48 2.75 THz, with greater than 10 percent instantaneous and tuning bandwidth, and having l 14 W of output power at room temperature, has been demonstrated. This source is based on a 91.8 101.8-GHz synthesizer followed by a power amplifier and three cascaded frequency triplers. It demonstrates that purely electronic solid-state sources can generate a useful amount of power in a region of the electromagnetic spectrum where lasers (solid-state or gas) were previously the only available coherent sources. The bandwidth, agility, and operability of this THz source has enabled wideband, high-resolution spectroscopic measurements of water, methanol, and carbon monoxide with a resolution and signal-to-noise ratio unmatched by other existing systems, providing new insight in the physics of these molecules. Further - more, the power and optical beam quality are high enough to observe the Lamb-dip effect in water. The source frequency has an absolute accuracy better than 1 part in 1012, and the spectrometer achieves sub-Doppler frequency resolution better than 1 part in 108. The harmonic purity is better than 25 dB. This source can serve as a local oscillator for a variety of heterodyne systems, and can be used as a method for precision control of more powerful but much less frequency-agile quantum mechanical terahertz sources.
Sub-millimeter Spectroscopy of Astrophysically Important Molecules and Ions: Metal Hydrides, Halides, and Cyanides
With the advent of SOFIA, Herschel, and SAFIR, new wavelength regions will become routinely accessible for astronomical spectroscopy, particularly at submm frequencies (0.5-1.1 THz). Molecular emission dominates the spectra of dense interstellar gas at these wavelengths. Because heterodyne detectors are major instruments of these missions, accurate knowledge of transition frequencies is crucial for their success. The Ziurys spectroscopy laboratory has been focusing on the measurement of the pure rotational transitions of astrophysically important molecules in the sub-mm regime. Of particular interest have been metal hydride species and their ions, as well as metal halides and cyanides. A new avenue of study has included metal bearing molecular ions.
4-Pixel Heterodyne Receiver at 1.9 THz using a CMOS Spectrometer
We present results from a 4x1-pixel 1.9 THz heterodyne array for the astrophysically important [CII] spectral line. A 4-pixel multiplier chain at 1.9 THz, with a compact spacing of 5 mm, is used as an LO. Receiver performance is verified by y-factor measurements with measured sensitivities of 900 K. Finally, using a coherent source near the target frequency of 1.9 THz, we down convert to baseband and measure spectra with both an IBOB and a new CMOS-based spectrometer. The CMOS spectrometer provides several advantages over more traditional spectrometers because of its compact size and low power consumption. This receiver prototype is easily scalable to other frequencies and larger focal plane arrays. Furthermore, because of its compact configuration, it can be easily packaged for orbital or sub-orbital missions.
Low-Noise Wide Bandwith, Hot Electron Bolometer Mixers for Submillimeter Wavelengths
Recently a novel superconductive hot-electron micro-bolometer has been proposed which is both fast and sensitive (D. E. Prober, Appl. Phys. Lett. 62, 2119, 1993). This device has several important properties which make it useful as a heterodyne sensor for radioastronomy applications at frequencies above 1 THz. The thermal response time of the device is fast enough, several 10's of picoseconds, to allow for IF's of several GHz. This bolometer mixer should operate well up to at least 10 THz. There is no energy gap limitation as in an SIS mixer, since the mixing process relies on heating of the electron gas. In fact, rf power is absorbed more uniformly above the gap frequency. The mixer noise should be near quantum-limited, and the local oscillator (LO) power requirement is very low: / 10 nW for a Nb device. One of the unique features of this device is that it employs rapid electron diffusion into a normal metal, rather than phonon emission, as the thermal conductance that cools the heated electrons. In order for diffusion to dominate over phonon emission, the device must be short, less than 0.5.
Magnetic-Field-Assisted Terahertz Quantum Cascade Laser Operating up to 225 K
Advances in semiconductor bandgap engineering have resulted in the recent development of the terahertz quantum cascade laser1. These compact optoelectronic devices now operate in the frequency range 1.2-5 THz, although cryogenic cooling is still required2.3. Further progress towards the realization of devices operating at higher temperatures and emitting at longer wavelengths (sub-terahertz quantum cascade lasers) is difficult because it requires maintaining a population inversion between closely spaced electronic sub-bands (1 THz approx. equals 4 meV). Here, we demonstrate a magnetic-field-assisted quantum cascade laser based on the resonant-phonon design. By applying appropriate electrical bias and strong magnetic fields above 16 T, it is possible to achieve laser emission from a single device over a wide range of frequencies (0.68-3.33 THz). Owing to the suppression of inter-landau-level non-radiative scattering, the device shows magnetic field assisted laser action at 1 THz at temperatures up to 215 K, and 3 THz lasing up to 225 K.