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At least 91 records · Page 5

High Thermopower in a Zn-Based 3D Semiconductive Metal–Organic Framework

Conductive metal–organic frameworks (c-MOFs) have drawn increasing attention for their outstanding performance in energy-related applications. However, the majority of reported c-MOFs are based on 2D structures. Synthetic strategies for 3D c-MOFs are under-explored, leaving unrealized functionality in both their structures and properties. Here in this paper we report a 3D c-MOF, namely Zn-HAB, designed through topological analysis. Comprising a nitrogen donor linker, hexaaminobenzene, and Zn(II) node, Zn-HAB was found to have microporosity with a band-gap of approximately 1.68 eV. The relatively large band-gap results in a modest conduc-tivity of 0.86 mS cm -1 and a high Seebeck coefficient of 200 μV K -1 at 300 K. The power factor of 3.44 nW m -1 K -2 constitutes the first report of the thermoelectric properties of an intrinsically conductive 3D MOF.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Synthesis, structure, and transport properties of Ba 8 Cu 16 – x Au x P 30 clathrate solid solution

In this work, a new clathrate solid solution Ba 8 Cu 16 – x Au x P 30 ( x = 4, 8, 12) was synthesized by a high-temperature solid-state annealing method. The crystal structures of Ba 8 Cu 16 – x Au x P 30 were determined by single crystal x-ray diffraction. This clathrate solid solution crystallizes in the orthorhombic superstructure of clathrate-I type with 23 crystallographically independent framework sites, eight of them are occupied by Au/Cu and 15 are exclusively occupied by P atoms. The distribution of Au and Cu atoms over these eight framework sites is not random with a clear preference for Au to occupy the largest (Au/Cu)P 4 tetrahedra in the framework. The thermal stability and thermoelectric properties of the Ba 8 Cu 16 – x Au x P 30 solid solution were evaluated. Low thermal conductivity was achieved for Ba 8 Cu 16 – x Au x P 30 due to the combination of the host–guest crystal structure with rattling Ba atoms with the presence of heavy Au atoms and substitutional Cu/Au disorder in the clathrate framework.

36 MATERIALS SCIENCE↗

Simultaneous enhancements of thermopower and electrical conductivity in quasi-one-dimensional α -YbAlB 4 single crystal

We report the thermoelectric properties of valence fluctuating material α-YbAlB 4 along a-, b-, and c-axes. The temperature dependence of the Seebeck coefficient for all axes shows negative peaks at around 250 K, which is close to the Kondo scale. Interestingly, the absolute value of the Seebeck coefficient along c-axis (-7 μV K -1 at 250 K) is larger than those along a- and b-axes (-50 μV K -1 at 250 K) although the electrical resistivity along c-axis is about four times lower than those along a- and b-axes. As a result, a very large thermoelectric power factor of ~14.5 mW m -1 K -2 is realized along c-axis at 200 K, which is ten times larger than those along a- and b-axes. The anisotropies in electrical resistivity and Seebeck coefficient, respectively, have different origins of Fermi surface and the c-f hybridization, realizing the simultaneous enhancements of thermopower and electrical conductivity.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Photothermoelectric effect in cadmium arsenide thin films for unbiased, mid-infrared photodetection

Mid-infrared photodetectors that can operate at room temperature are of great interest for a wide range of applications. Here, we demonstrate unbiased, mid-infrared (10.4 μm) photodetection in epitaxial thin films of the three-dimensional Dirac semimetal cadmium arsenide (Cd 3 As 2 ), which are grown on a III–V heterostructure. We show that the photocurrent response of planar metal–Cd 3 As 2 –metal devices is consistent with the photothermoelectric effect, which is due to a temperature gradient that develops under asymmetric illumination of the device. We show that the photoresponsivity of Cd 3 As 2 channel devices is an order of magnitude greater than devices with a III–V semiconductor channel, attesting to the excellent thermoelectric properties of Cd 3 As 2 and promising efficient unbiased, room-temperature mid-infrared photodetection.

36 MATERIALS SCIENCE↗

Enhanced thermoelectric efficiency in nanocrystalline bismuth telluride nanotubes

We report on the thermal and thermoelectric properties of individual nanocrystalline Bi 2 Te 3 nanotubes synthesized by the solution phase method using 3ω method and a microfabricated testbench. Measurements show that the nanotubes offer improved ZT compared to bulk Bi 2 Te 3 near room temperature due to an enhanced Seebeck coefficient and suppressed thermal conductivity. This improvement in ZT originates from the nanocrystalline nature and low dimensionality of the nanotubes. Domain boundary filtering of low-energy electrons provides an enhanced Seebeck coefficient. The scattering of phonons at the surface of the nanotube leads to suppressed thermal conductivity. These have been theoretically analyzed using the Boltzmann equation based on the relaxation time approximation and Landauer approach. This work clearly demonstrates the possibility of achieving enhancement in thermoelectric efficiency by combining nanocrystalline and low-dimensional systems.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Magnetothermopower of Nodal-Line Semimetals

The search for materials with large thermopower is of great practical interest. Dirac and Weyl semimetals have recently proven to exhibit superior thermoelectric properties, particularly when subjected to a quantizing magnetic field. Here, we consider whether a similar enhancement arises in nodal-line semimetals, for which the conduction and valence band meet at a line or ring in momentum space. We compute the Seebeck and Nernst coefficients for arbitrary temperature and magnetic field and we find a wealth of different scaling regimes. Most strikingly, when a sufficiently strong magnetic field is applied along the direction of a straight nodal line or in the plane of a nodal ring, the large degeneracy of states leads to a large linear-in- B thermopower that is temperature independent even at low temperatures. Our results suggest that nodal-line semimetals may offer significant opportunity for efficient low-temperature thermoelectrics. Published by the American Physical Society 2024

Chakraborty, Poulomi (ORCID:0000000213969473)↗

Unusual Electrical Conductivity Enhancement in Stable n‐Type Carbon Nanotube Networks

Organic molecule-doped n-type single-walled carbon nanotube (SWCNT) networks are promising candidates for advanced energy applications, such as flexible thermoelectrics and photovoltaics. Yet charge transport in n-type SWCNTs is limited by two factors: i) charge localization impeding inter-tube transport caused by disordered mesostructure of randomly oriented SWCNTs and ii) reduction of charge carrier concentration driven by oxidation. Herein, studied the relationship between the mesostructure and thermoelectric properties of n-type SWCNTs obtained by surfactant-functionalization and polymer-dopant grafting. Surprisingly, the electrical conductivity of the polymer-doped SWCNTs keeps increasing with increasing polymer content, even after the saturation of carrier concentration, resulting in 12x higher conductivity on polymer-doping compared to surfactant-functionalization. While hopping transport typically dominates in disordered systems, it is shown that a bridging effect from the polymer causes unusual band-like conduction in polymer-doped SWCNTs. Additionally, since surfactants are essential to prevent oxidation and retain n-type over a long duration, shows that SWCNTs obtained through a dual-functionalization strategy using both polymer-dopant and surfactant, demonstrates a long-term stable high n-type thermoelectric power factor, when the surfactant amount is carefully controlled. Besides thermoelectrics, the findings are of general interest to developing stable and conductive n-type SWCNTs for various energy and electronic applications.

carbon nanotubes↗

Improved thermoelectric performance of α- and β- Cu 2 Se through suppression of hole density using extrinsic copper vacancies

Modulating Cu + ion disorder in Cu 2 Se can enable control over the polymorphism and the carrier density leading to enhanced thermoelectric properties for both α- and β-Cu 2 Se. Here we report that the incorporation of Cr 3+ into the Cu 2 Se crystal lattice facilitates the stabilization of α-Cu 2 Se at 300 K leading to a large (~140%) reduction in the carrier density both below and above the phase transition. This is attributed to the reduction in the density of intrinsic copper interstitials (Cu$^{•}_{i}$) within the Cu (2-δ-λ) (Cr$^{··}_{Cu}$)λ(V$^{'}_{Cu}$)δ(Cu$^{π}_{i}$) δ-2λ (h • ) δ-2λ Se crystal lattice. Such optimization of the carrier density led to a large (63%) increase in the thermopower and a drastic (46%) reduction in the total thermal conductivity for both α- and β-Cu 2 Se matrices. Consequently, a significant enhancement of the thermoelectric performance is observed in the entire temperature range from 300 K to 773 K. This results in high average ZT values for both α-Cu 2 Se (ZT ave = 0.60) and β-Cu 2 Se (ZT ave = 0.97), which paves the way for both near room temperature and high temperatures applications. Furthermore, this work provides a new approach to optimize the thermoelectric performance of Cu 2 Se-based materials by leveraging the interaction between mobile intrinsic Cu$^{·}_{i}$ and extrinsic V$^{'}_{Cu}$ to suppress the hole density.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Thermoelectric Figure of Merit of a Superatomic Crystal Re 6 Se 8 I 2 Monolayer

Superatomic materials are newly emerging candidates for high-performance thermoelectric (TE) devices due to their intrinsic ultralow thermal conductivities. However, the low TE power factor becomes a huge obstacle to reaching the required the dimensionless figure of merit (ZT) values for practical applications. Here, motivated by the recently synthesized superatomic Re 6 Se 8 I 2 monolayer [J. Am. Chem. Soc. 144, 74 (2022)], we study its superior thermoelectric properties by using density functional theory combined with phonon Boltzmann transport theory and deep potential molecular dynamics. We show that the large mass and anharmonic Re-I bonds introduce strong phonon scattering and result in low lattice thermal conductivity of 1.20 W m -1 K -1 at 300 K, while the strong and harmonic Re-Se network ensures the high TE power factor of 4344 μW m -1 K -2 in b direction for n-type doping. This is an order of magnitude higher than that of other cluster-based materials. Due to the low thermal conductivity and high TE power factor, Re 6 Se 8 I 2 exhibits high ZT values of 1.20 (500 K) and 1.43 (900 K) with n-type doping along the b direction among all the cluster-based thermoelectric materials reported so far.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Machine learning-assisted ultrafast flash sintering of high-performance and flexible silver–selenide thermoelectric devices

Flexible thermoelectric generators (TEGs) have shown immense potential for serving as a power source for wearable electronics and the Internet of Things. A key challenge preventing large-scale application of TEGs lies in the lack of a high-throughput processing method, which can sinter thermoelectric (TE) materials rapidly while maintaining their high thermoelectric properties. Herein, we integrate high-throughput experimentation and Bayesian optimization (BO) to accelerate the discovery of the optimum sintering conditions of silver–selenide TE films using an ultrafast intense pulsed light (flash) sintering technique. Due to the nature of the high-dimensional optimization problem of flash sintering processes, a Gaussian process regression (GPR) machine learning model is established to rapidly recommend the optimum flash sintering variables based on Bayesian expected improvement. For the first time, an ultrahigh-power factor flexible TE film (a power factor of 2205 μW m -1 K -2 with a zT of 1.1 at 300 K) is demonstrated with a sintering time less than 1.0 second, which is several orders of magnitude shorter than that of conventional thermal sintering techniques. Further, the films also show excellent flexibility with 92% retention of the power factor (PF) after 10 3 bending cycles with a 5 mm bending radius. In addition, a wearable thermoelectric generator based on the flash-sintered films generates a very competitive power density of 0.5 mW cm -2 at a temperature difference of 10 K. This work not only shows the tremendous potential of high-performance and flexible silver–selenide TEGs but also demonstrates a machine learning-assisted flash sintering strategy that could be used for ultrafast, high-throughput and scalable processing of functional materials for a broad range of energy and electronic applications.

25 ENERGY STORAGE↗

A chemical kinetics perspective on thermoelectric transport

There is a growing community of chemists and materials scientists exploring thermoelectric properties of organic, polymeric, hybrid, and composite materials. Many of these materials are nondegenerate semiconductors, meaning that the Fermi and transport charge transport energy levels are significantly offset. Others are ionic conductors. While the meaning of the essential parameters electrical conductivity (σ) and Seebeck coefficient (S, the voltage difference per degree of temperature difference) are accessible, the origins of S are not readily apparent to one trained mainly in chemistry. The purpose of this manuscript is to illustrate S as being the result of a steady state difference between concentrations of two designations of charge carriers, those on hotter and those on colder sides of a material sample, analogous to the equilibrium among interconverting chemical species that differ in enthalpy and entropy. The ion-based Seebeck coefficient, also known as the Soret effect, can be explained using principles similar to those applicable to electrons and holes. We hope that this analysis leads to wider understanding of the origins of S through an explanation using the language of chemical kinetics and thermodynamics, and appreciation of ways that thermoelectric efficiency can be enhanced in emerging materials.

36 MATERIALS SCIENCE↗

Nanoscale inhomogeneity and the evolution of correlation strength in FeSe$$_{1-x}$$S$$_x$$

Abstract We report a comprehensive study of the nanoscale inhomogeneity and disorder on the thermoelectric properties of FeSe $$_{1-x}$$ 1 - x S $$_x$$ x ( $$0 \le x \le 1$$ 0 ≤ x ≤ 1 ) single crystals and the evolution of correlation strength with S substitution. A hump-like feature in temperature-dependent thermpower is enhanced for x = 0.12 and 0.14 in the nematic region with increasing in orbital-selective electronic correlations, which is strongly suppressed across the nematic critical point and for higher S content. Nanoscale Se/S atom disorder in the tetrahedral surroundings of Fe atoms is confirmed by scanning transmission electron microscopy measurements, providing an insight into the nanostructural details and the evolution of correlation strength in FeSe $$_{1-x}$$ 1 - x S $$_x$$ x .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Opening the Bandgap of Metallic Half-Heuslers via the Introduction of d–d Orbital Interactions

Half-Heusler compounds with semiconducting behavior have been developed as high-performance thermoelectric materials for power generation. Many half-Heusler compounds also exhibit metallic behavior without a bandgap and thus inferior thermoelectric performance. Here, taking metallic half-Heusler MgNiSb as an example, a bandgap opening strategy is proposed by introducing the d–d orbital interactions, which enables the opening of the bandgap and the improvement of the thermoelectric performance. The width of the bandgap can be engineered by tuning the strength of the d–d orbital interactions. The conduction type and the carrier density can also be modulated in the Mg 1- x Ti x NiSb system. Both improved n-type and p-type thermoelectric properties are realized, which are much higher than that of the metallic MgNiSb. The proposed bandgap opening strategy can be employed to design and develop new half-Heusler semiconductors for functional and energy applications.

36 MATERIALS SCIENCE↗

Devices for Thermal Conductivity Measurements of Electroplated Bi for X-ray TES Absorbers

Electroplated bismuth (Bi) is commonly used in transition-edge sensors (TESs) for X-rays because of its high stopping power and low heat capacity (Collan in Phys Rev B 1:2888, 1970, Yan in Appl Phys Lett 111:192602, 2017). Electroplated Bi is usually grown on top of another metal that acts as seed layer, typically gold (Au), making it challenging to extrapolate its thermoelectric properties. In this work, we present four-wire resistance measurement structures that allow us to measure resistance as a function of temperature of electroplated Bi independently of Au. The results show that the thermal conductivity of the Bi at 3 K is high enough to ensure the correct thermalization of X-ray photons when used as an absorber for TESs.

Bismuth↗

Mo 4 FeGa 17.25– x Ge x : Complementary Point Substitutions, Buffering Frameworks, and Merging of the 18-n and Octet Bonding Schemes

We present the discovery of Mo 4 FeGa 17.25–x Ge x (x ∼ 2.1(4), based on determination of Ge content), a complex gallide featuring a variety of point substitution phenomena. Its crystal structure is derived from the Ti 2 Ni type, in which a diamond network of face-sharing octahedra is interpenetrated by a second diamond network of vertex-sharing stella quadrangula. However, while in the ideal Ti 2 Ni type these two frameworks run uninterrupted through the crystal, Mo 4 FeGa 17.25–x Ge x shows three variations. First, the inner tetrahedron of every other stella quadrangula is replaced with a main group atom, creating tetrahedra reminiscent of the Zintl phase NaTl. Next, a selection of Ga 6 octahedra are filled with Fe atoms, in a manner analogous to the stuffed AuCu 3 -type phases. Finally, the refined crystal structure shows that in each unit cell a single Ga2 atom in the octahedral network is substituted with a dumbbell of Ga/Ge atoms. Electronic structure calculations on ordered models of Mo 4 FeGa 17.25–x Ge x reveal a narrow band near the Fermi energy, which is explained in terms of the 18-n and octet bonding schemes using reversed approximation Molecular Orbital analysis. A DFT-chemical pressure analysis connects the tetrahedron/atom and atom/dumbbell substitutions to the relief of atomic packing tensions and highlights soft atomic motions within the octahedral framework and driving forces for atom/dumbbell substitution. The combination of soft vibrational modes, disorder, and a narrow band gap could make this phase of interest for potential thermoelectric properties.

Chemical structure↗

Mechanochemically Enabled Metastable Niobium Tungsten Oxides

Metastable compounds have greatly expanded the synthesizable compositions of solid-state materials and have attracted enormous amounts of attention in recent years. Especially, mechanochemically enabled metastable materials synthesis has been very successful in realizing cation-disordered materials with highly simple crystal structures, such as rock salts. Application of the same strategy for other structural types, especially for non-close-packed structures, is peculiarly underexplored. Niobium tungsten oxides (NbWOs), a class of materials that have been under the spotlight because of their diverse structural varieties and promising electrochemical and thermoelectric properties, are ideally suited to fill such a knowledge gap. In this work, we develop a new series of metastable NbWOs and realize one with a fully cation-disordered structure. Furthermore, we find that metastable NbWOs transform to a cation-disordered cubic structure when applied as a Li-ion battery anode, highlighting an intriguing non-close-packed–close-packed conversion process, as evidenced in various physicochemical characterizations, in terms of diffraction, electronic, and vibrational structures. Lastly, by comparing the cation-disordered NbWO with other trending cation-disordered oxides, we raise a few key structural features for cation disorder and suggest a few possible research opportunities for this field.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Data mining and computational screening of Rashba-Dresselhaus splitting and optoelectronic properties in two-dimensional perovskite materials

Recent developments highlighting the promise of two-dimensional perovskites have vastly increased the compositional search space in the perovskite family. This presents a great opportunity for the realization of highly performant devices and practical challenges associated with the identification of candidate materials. High-fidelity computational screening offers great value in this regard. In this study, we carry out a multiscale computational workflow, generating a dataset of two-dimensional perovskites in the Dion-Jacobson and Ruddlesden-Popper phases. Our dataset comprises ten B-site cations, four halogens, and over 20 organic cations across over 2000 materials. We compute electronic properties, thermoelectric performance, and numerous geometric characteristics. Furthermore, we introduce a framework for the high-throughput computation of Rashba-Dresselhaus splitting. Finally, we use this dataset to train machine learning models for the accurate prediction of band gaps, candidate Rashba-Dresselhaus materials, and partial charges. The work presented herein can aid future investigations of two-dimensional perovskites with targeted applications in mind.

14 SOLAR ENERGY↗