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Hall effect, resistivity, spin resonance and thermoelectric properties of poly/N-vinyl carbazole/-iodine complex, demonstrating charge transfer state existence in system
A study of the thermoelectric properties of the skutterudite compound CoSb3 was carried out on single crystals grown by the Bridgman gradient freeze technique. p- and n-type samples were obtained over a wide range of carrier concentration. Undoped As-grown crystals show p-type conductivity while n-type samples were obtained by addition of Te or Pd. Samples were characterized by x-ray diffractometry, electron microprobe analysis, and density measurements. The physical properties of CoSb3 such as linear thermal expansion coefficient, sound velocity, and Debye temperature were also determined and are presented. Seebeck coefficient, electrical resistivity, thermal conductivity, and Hall effect measurements were performed between room temperature and about 900 K. Exceptionally high Hall mobilities were obtained on p-type samples with a maximum room-temperature Hall mobility of 3300 sq cm/V.s at a carrier concentration of 1 x 10(exp 17)/cc. The results of the transport property measurements are discussed and are in agreement with some recent predictions based on band structure calculations. The potential of CoSb3 for thermoelectric applications is evaluated.
Semiconducting iridium silicides were synthesized and thermoelectric properties identified. IrSi indicated low resistivity and typical metallic seebeck was obtained.
The present conference discusses NASA mission planning for space nuclear power, lunar mission design based on nuclear thermal rockets, inertial-electrostatic confinement fusion for space power, nuclear risk analysis of the Ulysses mission, the role of the interface in refractory metal alloy composites, an advanced thermionic reactor systems design code, and space high power nuclear-pumped lasers. Also discussed are exploration mission enhancements with power-beaming, power requirement estimates for a nuclear-powered manned Mars rover, SP-100 reactor design, safety, and testing, materials compatibility issues for fabric composite radiators, application of the enabler to nuclear electric propulsion, orbit-transfer with TOPAZ-type power sources, the thermoelectric properties of alloys, ruthenium silicide as a promising thermoelectric material, and innovative space-saving device for high-temperature piping systems. The second volume of this conference discusses engine concepts for nuclear electric propulsion, nuclear technologies for human exploration of the solar system, dynamic energy conversion, direct nuclear propulsion, thermionic conversion technology, reactor and power system control, thermal management, thermionic research, effects of radiation on electronics, heat-pipe technology, radioisotope power systems, and nuclear fuels for power reactors. The third volume discusses space power electronics, space nuclear fuels for propulsion reactors, power systems concepts, space power electronics systems, the use of artificial intelligence in space, flight qualifications and testing, microgravity two-phase flow, reactor manufacturing and processing, and space and environmental effects.
A large number of planetary missions under consideration for the next two decades will be using radioisotope thermoelectric generators to provide the necessary spacecraft electrical power. Performance, reliability, lifetime and cost of these RTGs are expected to be more demanding and will require the development of advanced thermoelectric materials. An advanced thermoelectric materials development program is being conducted by JPL and is the subject of this paper. Under this program, alloys of rare earth chalcogenides have been synthesized and their thermoelectric properties evaluated. The selection of specific compounds on which the program is currently concentrating is influenced by criteria such as low thermal conductivity, reasonably high operating temperatures (not less than 1000 C) and stability of the compounds. The paper discusses the rationale, approach and current status of the program. In addition, the thermoelectric and thermophysical property measurement used to evaluate the materials are described. The preliminary results and analysis of these experimental data are also given.
Transition metals of Group VIII (Co, Rh and Ir) have been prepared as semiconductor compounds with the general formula TSb.sub.3. The skutterudite-type crystal lattice structure of these semiconductor compounds and their enhanced thermoelectric properties results in semiconductor materials which may be used in the fabrication of thermoelectric elements to substantially improve the efficiency of the resulting thermoelectric device. Semiconductor materials having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using vertical gradient freezing techniques and/or liquid phase sintering techniques. Measurements of electrical and thermal transport properties of selected semiconductor materials prepared in accordance with the present invention, demonstrated high Hall mobilities (up to 1200 cm.sup.2.V.sup.-1.s.sup.-1) and good Seebeck coefficients (up to 150 .mu.VK.sup.-1 between 300.degree. C. and 700.degree. C.). Optimizing the transport properties of semiconductor materials prepared from elemental mixtures Co, Rh, Ir and Sb resulted in a substantial increase in the thermoelectric figure of merit (ZT) at temperatures as high as 400.degree. C. for thermoelectric elements fabricated from such semiconductor materials.
The thermoelectric compatiblity factor is used to rationally select materials for a segmented thermoelectric generator. the thermoelectric potential is used for the exact analytic expressions for materials with temperature dependent thermoelectric properties.
Transition metals (T) of Group VIII (Co, Rh and Ir) have been prepared as semiconductor alloys with Sb having the general formula TSb.sub.3. The skutterudite-type crystal lattice structure of these semiconductor alloys and their enhanced thermoelectric properties results in semiconductor materials which may be used in the fabrication of thermoelectric elements to substantially improve the efficiency of the resulting thermoelectric device. Semiconductor alloys having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using vertical gradient freeze techniques, liquid-solid phase sintering techniques, low temperature powder sintering and/or hot-pressing. Measurements of electrical and thermal transport properties of selected semiconductor materials prepared in accordance with the present invention, demonstrated high Hall mobilities (up to 8000 cm.sup.2.V.sup.-1.s.sup.-1), good Seebeck coefficients (up to 400 .mu.VK.sup.-1 between 300.degree. C. and 700.degree. C.), and low thermal conductivities (as low as 15 mW/cmK). Optimizing the transport properties of semiconductor materials prepared from elemental mixtures Co, Rh, Ir and Sb resulted in a two fold increase in the thermoelectric figure of merit (ZT) at temperatures as high as 400.degree. C. for thermoelectric elements fabricated from such semiconductor materials.
Report describes experimental investigation of thermoelectric properties of ruthenium sesquisilicide (RU2Si3). Suggests suitably doped Ru2Si3 could have thermoelectric figures of merit two or more times as large as SiGe.
The thermoelectric properties of several materials with the skutterudite structure have been.
A number of refractory semiconductors are under study at the Jet Propulsion Laboratory for application in thermal to electric energy conversion for space power. The main thrust of the program is to improve or develop materials of high figure of merit and, therefore, high conversion efficiencies over a broad temperature range. Materials currently under investigation are represented by silicon-germanium alloys, lanthanum telluride, and boron carbide. The thermoelectric properties of each of these materials, and prospects for their further improvements, are discussed. Continued progress in thermoelectric materials technology can be expected to yield reliable space power systems with double to triple the efficiency of current state of the art systems.
The present invention discloses heavily doped PbSe with high thermoelectric performance. Thermoelectric property measurements disclosed herein indicated that PbSe is high zT material for mid-to-high temperature thermoelectric applications. At 850 K a peak zT (is) greater than 1.3 was observed when n(sub H) approximately 1.0 X 10(exp 20) cm(exp -3). The present invention also discloses that a number of strategies used to improve zT of PbTe, such as alloying with other elements, nanostructuring and band modification may also be used to further improve zT in PbSe.
Cr(sub 11)Ge(sub 19) belongs to a large family of materials known as the Nowtny chimney-ladder compounds, some of which were recently proposed as advanced thermoelectric materials because of their low thermal conductivity related to their relatively complex crystal structure. In order to assess the potential of the compound Cr(sub 11)Ge(sub 19) for thermoelectric applications, we grew large single crystals of this peritectic compound by a vertical gradient freeze technique and measured the thermoelectric properties of the crystals.
Thermoelectric thin films exhibit different qualities when compared with bulk materials. The goal however is to achieve thermoelectric properties of bulk materials from electrodeposited thin films. Thin films are produced by electrochemical deposition at room temperature. In order to optimize thermoelectric figure of merit proper carrierconcentration must be obtained.
High temperature materials for space - electronic work function, thermoelectric properties, and corrosion resistance of alkali metals
A number of studies have been recently devoted to the preparation and characterization of binary skutterudite materials to investigate their potential as advanced thermoelectric materials. These studies show that the potential of these binary skutterudite compounds is limited because of their relatively large thermal conductivity. In order to achieve high thermoelectric figure of merits for these materials, efforts should focus on thermal conductivity reduction. Recent results obtained on n-type CoSb3 and IrSb3 compounds have shown that n-type skutterudite materials might have a better potential for thermoelectric applications than p-type materials. The thermoelectric properties of p-type IrxCo1-xSb3 solid solutions have been recently investigated and it was shown that a substantial reduction in thermal conductivity was achieved. We prepared and measured some properties of n-type IrxCo1-xSb3 solid solutions. The samples are characterized by large Seebeck coefficient values and significantly lower thermal conductivity values than those measured on the binary compounds CoSb3 and IrSb3. A maximum ZT value of about 0.4 was obtained at a temperature of about 300(deg)C. Improvements in the figure of merit are possible in this system by optimization of the doping level.
Since the discovery of state-of-the-art thermoelectric materials in the 1960s, little improvement has been made in the thermoelectric material efficiency. Although numerous materials have been investigated for their thermoelectric properties, ZT value of 1 has not been significantly exceeded. This paper presents a new family of materials with the skutterudite crystal structure which, based on initial results obtained on several compounds of this family, has a good potential for thermoelectric applications. This class of materials covers a wide range of decomposition temperatures and bandgaps, which could be used for low, intermediate to high temperature applications.
The potential of the semiconducting compound Beta-Zn(sub 4)Sb(sub 3) for thermoelectric energy conversion was investigated. The thermoelectric properties were measured on hot-pressed samples characterized by x-ray and microprobe analysis.