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At least 91 records · Page 5

Strain- and thickness-dependent magnetic properties of epitaxial La 0.67 Sr 0.33 CoO 3 /La 0.67 Sr 0.33 MnO 3 bilayers

Magnetic properties and interfacial phenomena of epitaxial perovskite oxides depend sensitively on parameters such as film thickness and strain state. In this work, epitaxial La0 .67 Sr 0.33 CoO 3 (LSCO)/La 0.67 Sr 0.33 MnO 3 (LSMO) bilayers were grown on NdGaO 3 (NGO) and LaAlO 3 (LAO) substrates with a fixed LSMO thickness of 6 nm, and LSCO thickness (t LSCO ) varying from 2 to 10 nm. Soft x-ray magnetic spectroscopy revealed that magnetically active Co 2+ ions that strongly coupled to the LSMO layer were observed below a critical t LSCO for bilayers grown on both substrates. On LAO substrates, this critical thickness was 2 nm, above which the formation of Co 2+ ions was quickly suppressed leaving only a soft LSCO layer with mixed valence Co 3+ /Co 4+ ions. The magnetic properties of both LSCO and LSMO layers displayed strong t LSCO dependence. This critical t LSCO increased to 4 nm on NGO substrates, and the magnetic properties of only the LSCO layer displayed t LSCO dependence. A non-magnetic layer characterized by Co 3+ ions and with a thickness below 2 nm exists at the LSCO/substrate interface for both substrates. Therefore, the results contribute to the understanding of interfacial exchange spring behavior needed for applications in next generation spintronic and magnetic memory devices.

36 MATERIALS SCIENCE↗

Thickness dependent OER electrocatalysis of epitaxial thin film of high entropy oxide

High entropy oxides (HEOs), which contain multiple elements in the same crystallographic site, are a promising platform for electrocatalysis in oxygen evolution reaction (OER). Investigating these materials in epitaxial thin film form expands the possibility of tuning OER activity by several means, which are not realizable in polycrystalline samples. To date, very few such studies have been reported. In this work, the OER activity of single-crystalline thin films of (La 0.2 Pr 0.2 Nd 0.2 Sm 0.2 Eu 0.2 )NiO 3 , grown on NdGaO 3 substrates have been investigated in 0.1 M KOH electrolyte as a function of film thickness. The OER activity increases with the thickness of the film. X-ray absorption spectroscopy measurements find an increase in Ni $d$-O $p$ covalency and a decrease in charge transfer energy with the increase in film thickness. These facilitate higher charge transfer between Ni and surface adsorbates, increasing OER activity. However, the OER process leads to excessive leaching of thicker films and the OER activity of a 75 unit cell thick film is found to be optimal in the present study. In conclusion, this work demonstrates that the thickness of perovskite oxides can be used as a parameter to enhance OER activity.

36 MATERIALS SCIENCE↗

Impact of quantum well thickness on efficiency loss in InGaN/GaN LEDs: Challenges for thin-well designs

We investigate the impact of quantum well (QW) thickness on efficiency loss in c-plane InGaN/GaN LEDs using a small-signal electroluminescence technique. Multiple mechanisms related to efficiency loss are independently examined, including injection efficiency, carrier density vs current density relationship, phase space filling, quantum-confined Stark effect, and Coulomb enhancement. An optimal QW thickness of around 2.7 nm in these InGaN/GaN LEDs was determined for QWs having constant In composition. Despite improved control of deep-level defects and lower carrier density at a given current density, LEDs with thin QWs still suffer from an imbalance in enhancement effects on the radiative and intrinsic Auger–Meitner recombination coefficients. The imbalance in enhancement effects results in a decline in internal quantum efficiency and radiative efficiency with decreasing QW thickness at low current density in LEDs with QW thicknesses below 2.7 nm. Here, we also investigate how LED modulation bandwidth varies with QW thickness, identifying the key trends and their implications for device performance.

36 MATERIALS SCIENCE↗

Anomalous thickness-dependent electrical conductivity in van der Waals layered transition metal halide, Nb 3 Cl 8

Understanding the electronic transport properties of layered, van der Waals transition metal halides (TMHs) and chalcogenides is a highly active research topic today. Of particular interest is the evolution of those properties with changing thickness as the 2D limit is approached. Here, we present the electrical conductivity of exfoliated single crystals of the TMH, cluster magnet, Nb 3 Cl 8 , over a wide range of thicknesses both with and without hexagonal boron nitride (hBN) encapsulation. The conductivity is found to increase by more than three orders of magnitude when the thickness is decreased from 280 µm to 5 nm, at 300 K. At low temperatures and below ~50 nm, the conductance becomes thickness independent, implying surface conduction is dominating. Temperature dependent conductivity measurements indicate Nb 3 Cl 8 is an insulator, however, the effective activation energy decreases from a bulk value of 310 meV to 140 meV by 5 nm. X-ray photoelectron spectroscopy (XPS) shows mild surface oxidation in devices without hBN capping, however, no significant difference in transport is observed when compared to the capped devices, implying the thickness dependent transport behavior is intrinsic to the material. A conduction mechanism comprised of a higher conductivity surface channel in parallel with a lower conductivity interlayer channel is discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

The dependence of tungsten fuzz layer thickness and porosity on tungsten deposition rate and helium ion fluence

Abstract Fuzz formation on a heated tungsten surface in the presence of a helium-containing plasma and tungsten deposition source was investigated. Tungsten samples were exposed at 1123 K to pure helium plasma with ion incident energy of 76 eV, W/He ion flux ratio of ∼ 0.4 × 10 − 4 , and varied helium ion fluence from 0.18 to 3.4 × 10 26 m −2 . Fuzz thickness was measured by cross-sectional scanning electron microscopy to increase from 0.22 to 15 µ m with increasing helium ion fluence. No indication of saturation in fuzz thickness at high fluence was observed, in contrast to fuzz produced on a tungsten surface without tungsten deposition. Additional tungsten samples were exposed at 1123 K to pure helium plasma with ion incident energy of 76 eV, helium ion fluence of ∼ 3.4 × 10 26 m −2 , and varied W/He ion flux ratio from 0.26 to 3.0 × 10 − 4 . Fuzz thickness increased from 7.5 to 120 µ m with increasing W/He ion ratio. A final sample exposed at 1123 K to a mixed helium-deuterium plasma with ion incident energy of 76 eV, helium ion fluence of 0.18 × 10 26 m −2 , and W/He ion flux ratio of 2.2 × 10 − 4 developed nearly identical fuzz structures to that developed in a pure He plasma. As a function of deposited tungsten fluence, all results were found to trace out a single layer-growth curve given by a power law relation, indicating that fuzz thickness is independent of the W/He ion flux ratio in the range investigated and independent of any deuterium present in the plasma. As a result, for tungsten plasma facing walls in magnetic fusion devices at 1000–2000 K with 10 −4 W/He ion flux ratio, fuzz with thicknesses greater than hundreds of microns may form in as little as 10 4 s (in the absence of ELM-induced erosion or annealing), and may more significantly affect its thermophysical properties than fuzz generated without a tungsten deposition source.

Physics↗

Thickness dependence of magnetotransport properties of tungsten ditelluride

Here we investigate the electronic structure of tungsten ditelluride (WTe 2 ) flakes with different thicknesses in magnetotransport studies. The temperature-dependent resistance and magnetoresistance (MR) measurements both confirm the breaking of carrier balance induced by thickness reduction, which suppresses the “turn-on” behavior and large positive MR. The Shubnikov-de-Haas oscillation studies further confirm the thickness-dependent change of electronic structure of WTe 2 and reveal a possible temperature-sensitive electronic structure change. Finally, we report the thickness-dependent anisotropy of the Fermi surface, which reveals that multilayer WTe 2 is an electronic 3D material and the anisotropy decreases as thickness decreases.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Towards Construction of a Novel Nanometer-Resolution MeV-STEM for Imaging Thick Frozen Biological Samples

Driven by life-science applications, a mega-electron-volt Scanning Transmission Electron Microscope (MeV-STEM) has been proposed here to image thick frozen biological samples as a conventional Transmission Electron Microscope (TEM) may not be suitable to image samples thicker than 300–500 nm and various volume electron microscopy (EM) techniques either suffering from low resolution, or low speed. The high penetration of inelastic scattering signals of MeV electrons could make the MeV-STEM an appropriate microscope for biological samples as thick as 10 μm or more with a nanoscale resolution, considering the effect of electron energy, beam broadening, and low-dose limit on resolution. The best resolution is inversely related to the sample thickness and changes from 6 nm to 24 nm when the sample thickness increases from 1 μm to 10 μm. To achieve such a resolution in STEM, the imaging electrons must be focused on the specimen with a nm size and an mrad semi-convergence angle. This requires an electron beam emittance of a few picometers, which is ~1000 times smaller than the presently achieved nm emittance, in conjunction with less than 10 -4 energy spread and 1 nA current. We numerically simulated two different approaches that are potentially applicable to build a compact MeV-STEM instrument: (1) DC (Direct Current) gun, aperture, superconducting radio-frequency (SRF) cavities, and STEM column; (2) SRF gun, aperture, SRF cavities, and STEM column. Beam dynamic simulations show promising results, which meet the needs of an MeV-STEM, a few-picometer emittance, less than 10 -4 energy spread, and 0.1–1 nA current from both options. Also, we designed a compact STEM column based on permanent quadrupole quintuplet, not only to demagnify the beam size from 1 μm at the source point to 2 nm at the specimen but also to provide the freedom of changing the magnifications at the specimen and a scanning system to raster the electron beam across the sample with a step size of 2 nm and the repetition rate of 1 MHz. This makes it possible to build a compact MeV-STEM and use it to study thick, large-volume samples in cell biology.

36 MATERIALS SCIENCE↗

Measurement of Piston Deposit Thickness Using Laser Profilometer

In this work, a novel method of measuring the thickness of deposits on engine pistons, including within ring grooves, is described. A laser profilometer is used in conjunction with a rotary stage to measure a continuous profile of the piston with deposits, and the measurement is repeated after cleaning the deposits from the piston. Algorithms for aligning the scans and determining the differential thickness are described, and results are compared to deposit thickness measurements using a contact-type magnetic induction coating thickness gauge. This method allows continuous measurement of deposit thickness across the entire surface including lands and ring grooves as well as quantification of the volume of the deposits.

42 ENGINEERING↗

Probing the Effect of Electrode Thermodynamics on Reaction Heterogeneity in Thick Battery Electrodes

Thick electrodes present a viable strategy for enhancing energy density and reducing manufacturing costs of lithium-ion batteries. However, reaction heterogeneity during cycling compromises their rate capability and cycle life. While this nonuniformity is commonly attributed to sluggish charge transport, it is demonstrated here that the thermodynamic properties of the electrode material play an equally critical role. Through combined X-ray fluorescence microscopy and absorption near-edge structure spectroscopy, reaction distributions in LiFePO 4 (LFP) and LiNi 0.6 Mn 0.2 Co 0.2 O 2 (NMC) thick electrodes with matched porosity and tortuosity are compared. LFP electrodes develop pronounced depth-oriented state-of-charge (SOC) gradients that worsen with increasing discharge rates, whereas NMC maintains much more uniform SOC distributions under such conditions. This difference originates from their distinct SOC dependence of equilibrium potentials and is quantifiable through a dimensionless “reaction uniformity” number. Intriguingly, LFP thick electrodes also exhibit lateral SOC variations that strengthen during slow discharge. In conclusion, the enhanced reaction uniformity in NMC correlates with better active material utilization and slower capacity fade than LFP, highlighting electrode thermodynamics as a key design consideration for thick electrodes.

36 MATERIALS SCIENCE↗

Towards High-Speed friction stir welding of 25 mm Thick AA2139-T8: tool innovation and process development

Joining thick plates (≥ 12 mm) of aluminum (Al) alloys is challenging due to high tool forces, uneven material flow, and non-uniform heat distribution through the material’s thickness. Recent advancements in tool design and welding parameters for friction stir welding (FSW) in thick plates butt joining have encountered a developmental plateau, highlighting the need for innovative approaches to overcome existing limitations. Here, this study focuses on the systematic development of single-pass and double-pass FSW processes for high-strength aluminum alloy AA2139-T8, to improve joint efficiency and enable high-speed welding capabilities. Experimental evidence is presented for a novel tool design with opposing pin threads, enabling high-speed (178 mm/min) single-pass friction stir butt welding of 25 mm thick AA2139-T8. A series of FSW trials was conducted both in air and with a trailing water spray, using steel backing plates (BPs) to investigate the impact of quenching and cooling rates on process response and joint performance. A joint efficiency of 83% was attained using the novel tool features and effectively controlling process forces and thermal boundary conditions.

AA2139-T8↗

Exact solution of burst pressure for thick-walled pipes using the flow theory of plasticity

This paper develops an exact solution of burst pressure for defect-free, thick-walled pipes using the flow theory of plasticity in terms of the average shear stress yield criterion (or Zhu-Leis yield criterion). The pipe steel is assumed to obey the power-law strain hardening rule, and large plastic deformation is described by the finite strain theory. On this basis, internal pressure is obtained as a power series function of the effective strains on the inside and outside surfaces of the thick-walled pipe with use of the second Bernoulli numbers. At burst failure, the Zhu-Leis flow solution of burst pressure is determined as a power series solution, and the burst effective strains, the burst effective stresses, and the burst pressure are functions of the diameter ratio (D o / D i ), strain hardening exponent (n), and ultimate tensile strength (UTS). Similarly, the Tresca and von Mises flow solutions of burst pressure are also determined as a power series solution in terms of the Tresca and von Mises yield criteria. A general closed-from exact solution of burst pressure is then proposed for the three yield criteria, and the results showed that the proposed exact solution matches well with the power series solution for each yield criterion. Moreover, the von Mises flow solution is an upper bound prediction, the Tresca flow solution is a lower bound prediction, and the Zhu-Leis flow solution is an intermediate prediction that agrees well with the finite element analysis results of burst pressure for thick-walled pipes. Furthermore, two datasets of full-scale burst tests are then utilized to evaluate and validate the proposed flow solutions of burst pressure for both thin and thick-walled pipes.

42 ENGINEERING↗

Thickness and uniformity mapping of thin foils using resistive silicon detectors

Alpha energy loss is a common tool used for measuring target thicknesses. However, these measurements are often made without position information, which either forfeits knowledge of material uniformity and local thickness or requires a prohibitive number of measurements per target to partially recover this information. In consideration of this, a method for measuring position-dependent thicknesses is described in this work; by using the position-sensitivity of the dual-axis duo-lateral (DADL) silicon detector, thicknesses across the entire face of the material can be measured to sub-mm precision with a single measurement. Several examples are presented using a number of targets with varying characteristics, which altogether demonstrate the precision, accuracy, and versatility of this technique.

Foil uniformity↗

Experimental study of energy-dependent angular broadening of MeV electron beams for high-resolution imaging in thick samples

In scanning transmission electron microscopy (STEM), spatial resolution is primarily influenced by the projected size of the electron probe within the specimen. In thin samples, a large semi-convergence angle enables a tightly focused beam and sub-nanometer resolution. However, in thick specimens, resolution is fundamentally limited by transverse beam broadening from multiple large-angle scattering events—for example, a probe with 10 mrad angular divergence can broaden by ∼100 nm over a 10 μm path. Since this broadening scales inversely with beam energy, MeV-STEM offers a promising route for high-resolution imaging in thick materials. To quantitatively assess this effect, we performed high-precision measurements at UCLA’s PEGASUS beamline, characterizing beam divergence and intensity profiles for 3–8 MeV electrons transmitted through a wedged-silicon sample of varying thickness. Our results reconcile discrepancies among analytical models and validate Monte Carlo simulations. Here, we find that increasing beam energy from 3.0 to 5.8 MeV reduces angular broadening by a factor of 2.6, with diminishing returns observed at 7.6 MeV. These findings provide a quantitative framework for optimizing MeV-STEM parameters in high-resolution imaging of thick biological and microelectronic specimens, and for guiding beam energy selection in other advanced imaging modes beyond STEM.

36 MATERIALS SCIENCE↗

Thickness-Dependent Cross-Plane Thermal Conductivity Measurements of Exfoliated Hexagonal Boron Nitride

Submicrometer-thick layers of hexagonal boron nitride (hBN) exhibit high in-plane thermal conductivity and useful optical properties, and serve as dielectric encapsulation layers with low electrostatic inhomogeneity for graphene devices. Despite the promising applications of hBN as a heat spreader, the thickness dependence of its cross-plane thermal conductivity is not known, and the cross-plane phonon mean free paths (MFPs) have not been measured. We measure the cross-plane thermal conductivity of hBN flakes exfoliated from bulk crystals. We find that submicrometer thick flakes exhibit thermal conductivities up to 8.1 ± 0.5 W m –1 K –1 at 295 K, which exceeds previously reported bulk values by more than 60%. Surprisingly, the average phonon mean free path is found to be several hundred nanometers at room temperature, a factor of 5 larger than previous predictions. When planar twist interfaces are introduced into the crystal by mechanically stacking multiple thin flakes, the cross-plane thermal conductivity of the stack is found to be a factor of 7 below that of individual flakes with similar total thickness, thus providing strong evidence that phonon scattering at twist boundaries limits the maximum phonon MFPs. These results have important implications for hBN integration in nanoelectronics and improve our understanding of thermal transport in twodimensional materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Shell Thickness and Heterogeneity Dependence of Triplet Energy Transfer between Core–Shell Quantum Dots and Adsorbed Molecules

Quantum dot (QD)-sensitized triplet energy transfer (TET) has found promising applications in photon upconversion and photocatalysis. However, the underlying mechanism of TET in the QD-acceptor complex remains unclear despite the well-developed TET theory for the molecular donor–acceptor systems. Herein, the coupling strength of TET from CdSe/CdS core–shell QDs to 9-anthracene carboxylic acid (ACA) was studied by measuring the TET rate as a function of shell thickness with time-resolved photoluminescence. The change of TET-coupling strength with increasing shell thickness was further compared to those of electron and hole transfers from QDs so that we could test whether QD-sensitized TET is mediated by the charge transfer virtual state and can be considered as simultaneous electron and hole transfers as in molecular donor–acceptor systems. The measured coupling strength of TET from the CdSe/CdS QD decreases exponentially with the CdS shell thickness r: |V|(r) = |V|(0)e –βr , with an exponential decay factor β of 0.19 Å –1 , which is smaller than the sum of the measured decay factors for electron transfer to methyl viologen (0.18 Å –1 ) and hole transfer to phenothiazine (0.29 Å –1 ) from the same QD. This inconsistency is explained by the broadening of QD shell thicknesses in the distance dependence study, which significantly modifies the TET-coupling strength and driving force, resulting in a shallower distance dependence of the TET rate constants. This study sheds light on the fundamental mechanisms of QD-sensitized TET reactions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Detecting Permafrost Active Layer Thickness Change From Nonlinear Baseflow Recession

We report permafrost underlies about one fifth of the global land area and affects ground stability, freshwater runoff, soil chemistry, and surface-atmosphere gas exchange. The depth of thawed ground overlying permafrost (active layer thickness) has broadly increased across the Arctic in recent decades, coincident with a period of increased streamflow, especially the lowest flows (baseflow). Mechanistic links between active layer thickness and baseflow have recently been explored using linear reservoir theory, but most watersheds behave as nonlinear reservoirs. We derive theoretical nonlinear relationships between long-term average saturated soil thickness $\bar{η}$(proxy for active layer thickness) and long-term average baseflow. When applied to 38 years of daily streamflow data for the Kuparuk River basin on the North Slope of Alaska, the theory predicts $\bar{η}$ increased 0.17 ± 0.22[2σ] cm a -1 between 1983 and 2020 (6.4 ± cm total). The rate of increase nearly doubled to 0.29 ± 0.31 cm a -1 between 1990 and 2020, during which time local field measurements from Circumpolar Active Layer Monitoring sites indicate the active layer increased 0.31 ± 0.22 cm a -1 . The predicted rate of increase more than doubled again between 2002 and 2020, outpacing a near doubling of observed active layer thickening, consistent with trends in terrestrial water storage inferred from Gravity Recovery and Climate Experiment satellite gravimetry and Modern-Era Retrospective Analysis for Research and Applications climate reanalysis. Overall, hydrologic change is accelerating in the Kuparuk River basin, and we provide a theoretical framework for estimating basin-scale changes in active layer water storage from streamflow measurements.

54 ENVIRONMENTAL SCIENCES↗

Integrating Spatial and Ethnographic Methods for Resilience Research: A Thick Mapping Approach for Hurricane Maria in Puerto Rico

Hurricane Maria left unprecedented impacts on Puerto Rican communities, leaving some without infrastructure services and unable to communicate with family for several months. Here, to understand the forms of community-level resilience that emerged while hard infrastructure systems took time recover, this article (1) abductively explores resilience as an emergent phenomenon of complex adaptive systems; (2) identifies subsequent forms of social capital, local adaptive capacities, and manifestations of quantifiable variables, such as infrastructure performance, in community experiences; and (3) demonstrates a framework to integrate disparate methodologies for resilience assessments via a multiplicity of mappings of space and place. We combine ethnographic and geospatial methods into an interactive GeoApp for analysis using participant-coded narratives and a series of geospatial indicators as a thick map. Thick mapping facilitates quantitative and qualitative data analysis at several scales, while enabling qualitative query of collected narratives. Results highlight local innovation, community bonding and bridging, and nuances in the role of public institutions as emergent elements of resilience. The thick map shows how top-down assessments can be augmented by thick data and how multiple framings can be anchored in the same system or place. These findings are important to inform and integrate community-oriented and technocentric solutions toward resilience-enhancing measures.

54 ENVIRONMENTAL SCIENCES↗

Nanometer-thick ultraflat cantilever resonators

Nanomechanical devices made from ultrathin materials are transforming diverse fields, including sensing, signal processing, and quantum technologies. However, as these materials become thinner, their low bending rigidity poses significant fabrication challenges, and achieving nanometer-thick flat cantilevers with consistent and predictable mechanical responses has remained elusive despite decades of research. Here we present nanometer-thick, ultraflat cantilever resonators fabricated using atomic layer deposition. By effectively mitigating the effects of uncontrollable built-in strain and geometric disorder, the ultraflat nanocantilevers exhibit resonance frequencies closely aligned with thin-plate theory predictions and display low sample-to-sample variability. These cantilevers maintain mechanical stability in both vacuum and air environments, even at large length-to-thickness ratios of up to 3000. The ultraflat nanocantilevers are approaching the thickness limit, beyond which thermal fluctuations at room temperature can spontaneously induce random ripples in otherwise flat films.

nanofabrication↗