Search NASA⌕ Search

SEARCH · Search NASA

Results for “Thin beams”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS1993

Transverse vibrations of shear-deformable beams using a general higher order theory

A general higher order theory is developed to study the static and vibrational behavior of beam structures having an arbitrary cross section that utilizes both out-of-plane shear-dependent warping and in-plane (anticlastic) deformations. The equations of motion are derived via Hamilton's principle, where the full 3D constitutive relations are used. A simplified version of the general higher-order theory is also presented for beams having an arbitrary cross section that includes out-of-plane shear deformation but assumes that stresses within the cross section and in-plane deformations are negligible. This simplified model, which is accurate for long to moderately short wavelengths, offers substantial improvements over existing higher order theories that are limited to beams with thin rectangular cross sections. The current approach will be very useful in the study of thin-wall closed-cell beams such as airfoil-type sections where the magnitude of shear-related cross-sectional warping is significant.

Kosmatka, J. B.↗
NASA NTRS1992

Theory of anisotropic thin-walled closed-section beams with hygrothermal effects

A variationally consistent theory is developed in order to derive the governing equations of anisotropic thin-walled beams with closed sections subjected to axial load, torsion, bending and hygrothermal loads. The theory is based on an asymptotical analysis of two-dimensional shell theory. Closed-form expressions for the beam stiffness coefficients, equivalent hygrothermal loads, stress and displacement fields are provided. The influence of material anisotropy and hygrothermal coefficients on the displacement field is identified. The analysis is applied to predict the response of composite beams under thermomechanical loading.

Badir, Ashraf M.↗
DOE OSTI2020

Demonstration of nearly pinhole-free epitaxial aluminum thin films by sputter beam epitaxy

Superconducting resonators with high quality factors have been fabricated from aluminum films, suggesting potential applications in quantum computing. Improvement of thin film crystal quality and removal of void and pinhole defects will improve quality factor and functional yield. Epitaxial aluminum films with superb crystallinity, high surface smoothness, and interface sharpness were successfully grown on the c-plane of sapphire using sputter beam epitaxy. This study assesses the effects of varying substrate preparation conditions and growth and prebake temperatures on crystallinity and smoothness. X-ray diffraction and reflectivity measurements yield extensive Laue oscillations and Kiessig thickness fringes for films grown at 200 °C under 15 mTorr Ar, indicating excellent crystallinity and surface smoothness; moreover, an additional substrate preparation procedure which involves (1) a modified substrate cleaning procedure and (2) prebake at 700 °C in 20 mTorr O 2 is shown by atomic force microscopy to yield nearly pinhole-free film growth while maintaining epitaxy and high crystal quality. The modified cleaning procedure is environmentally friendly and eliminates the acid etch steps common to conventional sapphire preparation, suggesting potential industrial application both on standard epitaxial and patterned surface sapphire substrates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1969

Welding of very thin foil.

Electron beam welding method for very thin foils, discussing welding of pinhole free Ni, Cu and stainless steel foils

Fowler, P.↗
NASA NTRS1994

(abstract) Optical Scattering and Surface Microroughness of Ion Beam Deposited Au and Pt Thin Films

Thin films of gold and platinum have been deposited onto superpolished fused silica substrates using thermal evaporation, ion assisted deposition (IAD), and ion assisted sputtering. The influence of ion beam flux, thin film material, and deposition rate on the films microroughness have been investigated. Short range surface microroughness of the films has been examined using scanning tunneling microscopy (STM) and atomic force microscopy (AFM). Long range surface microroughness has been characterized using an angle resolved optical scatterometer. Results indicate that ion beam deposited coatings have improved microstructure over thermally evaporated films.

assisted sputtering fused silica ion beam microrou↗
NASA NTRS1986

One-dimensional analysis of filamentary composite beam columns with thin-walled open sections

Vlasov's one-dimensional structural theory for thin-walled open section bars was originally developed and used for metallic elements. The theory was recently extended to laminated bars fabricated from advanced composite materials. The purpose of this research is to provide a study and assessment of the extended theory. The focus is on flexural and torsional-flexural buckling of thin-walled, open section, laminated composite columns. Buckling loads are computed from the theory using a linear bifurcation analysis and a geometrically nonlinear beam column analysis by the finite element method. Results from the analyses are compared to available test data.

Lo, Patrick K.-L.↗
NASA NTRS1989

Electron-beam induced damage in thin insulating films on compound semiconductors

Phosphorus rich plasma enhanced chemical vapor deposition (PECVD) of silicon nitride and silicon dioxide films on n-type indium phosphide (InP) substrates were exposed to electron-beam irradiation in the 5 to 40 keV range for the purpose of characterizing the damage induced in the dielectric. The electron-beam exposure was on the range of 10(exp -7) to 10(exp -3) C/sq cm. The damage to the devices was characterized by capacitance-voltage (C-V) measurements of the metal insulator semiconductor (MIS) capacitors. These results were compared to results obtained for radiation damage of thermal silicon dioxide on silicon (Si) MOS capacitors with similar exposures. The radiation induced damage in the PECVD silicon nitride films on InP was successfully annealed out in an hydrogen/nitrogen (H2/N2) ambient at 400 C for 15 min. The PECVD silicon dioxide films on InP had the least radiation damage, while the thermal silicon dioxide films on Si had the most radiation damage.

Pantic, Dragan M.↗
NASA NTRS2016

Electron-Beam Deposition of Superconducting Molybdenum Thin Films for the Development of Mo/Au TES X-Ray Microcalorimeter

We are exploring the properties of electron-beam evaporated molybdenum thin films on silicon nitride coated silicon wafers at substrate temperatures between room temperature and 650 C. The temperature dependence of film stress, transition temperature, and electrical properties are presented. X-ray diffraction measurements are performed to gain information on molybdenum crystallite size and growth. Results show the dominant influence of the crystallite size on the intrinsic properties of our films. Wafer-scale uniformity, wafer yield, and optimal thermal bias regime for TES fabrication are discussed.

Microcalorimeter↗
DOE OSTI2025

Synthesis and Physical Properties of Manganese Chromium Nitride Thin Films Grown via Molecular Beam Epitaxy

Here, we demonstrate the ability to grow epitaxial thin films of manganese–chromium nitride (Mn x Cr 1–x N) across the entire composition range on magnesium oxide (MgO) (1 0 0) surfaces by molecular beam epitaxy. By independently controlling the ratio of the atomic fluxes of manganese and chromium, the compositional dependence of structural and electrical transport properties is determined. Soft X-ray absorption shows that the valence states of Cr( 3+ ) and Mn( 3+ ) remain identical among these MnCrN epitaxial films. The metallic transport behavior of binary manganese nitride (MnN) and chromium nitride (CrN) is suppressed in the ternary alloys. Changes in room temperature electrical resistivity of up to 100 times and 5 orders of magnitude at cryogenic temperatures are observed. This work expands the variety of nitride compounds available for epitaxial integration and could provide additional flexibility for the development of metal–semiconductor–insulator junctions for spintronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Single-beam ion source enhanced growth of transparent conductive thin films

A single-beam ion source was developed and used in combination with magnetron sputtering to modulate the film microstructure. The ion source emits a single beam of ions that interact with the deposited film and simultaneously enhances the magnetron discharge. The magnetron voltage can be adjusted over a wide range, from approximately 240 to 130 V, as the voltage of the ion source varies from 0 to 150 V, while the magnetron current increases accordingly. The low-voltage high-current magnetron discharge enables a 'soft sputtering mode', which is beneficial for thin-film growth. Indium tin oxide (ITO) thin films were deposited at room temperature using a combined single-beam ion source and magnetron sputtering. Furthermore, the ion beam resulted in the formation of polycrystalline ITO thin films with significantly reduced resistivity and surface roughness. Single-beam ion-source-enhanced magnetron sputtering has many potential applications in which low-temperature growth of thin films is required, such as coatings for organic solar cells.

36 MATERIALS SCIENCE↗
NASA NTRS1992

Theory of anisotropic thin-walled closed-cross-section beams

A variationally and asymptotically consistent theory is developed in order to derive the governing equations of anisotropic thin-walled beams with closed sections. The theory is based on an asymptotic analysis of two-dimensional shell theory. Closed-form expressions for the beam-stiffness coefficients, stress and displacement fields are provided. The influence of material anisotropy on the displacement field is identified. A comparison with the displacement fields obtained by other analytical developments is performed. The stiffness coefficients and static response are also compared with finite element predictions, closed-form solutions and test data.

Berdichevsky, Victor↗
DOE OSTI2022

Superconducting phase of Ti x O y thin films grown by molecular beam epitaxy

Here we investigate the complex relationship between the growth conditions and the structural and transport properties of Ti x O y thin films grown by molecular beam epitaxy. Transport properties ranging from metallicity to superconductivity and insulating states are stabilized by effectively tuning the O/Ti ratio via the Ti flux rate and the O partial pressure P Ox for films grown on (0001)-Al 2 O 3 substrates at 850° C. A cubic c-TiO 1±δ buffer layer is formed for low O/Ti ratios, while a corundum cr-Ti 2 O 3 layer is formed under higher-oxidizing conditions. Metallicity is observed for c-TiO 1-δ buffer layers. The superconducting γ -Ti 3 O 5 Magnéli phase is found to nucleate on a c-TiO 1-δ buffer for intermediate POx conditions, and an insulator-superconducting transition is observed at 4.5 K (T$^{onset}_{C}$ = 6K) for 85 nm thick films. Strain relaxation of γ -Ti 3 O 5 occurs with increasing film thickness and correlates with a thickness-dependent increase in T C observed for Ti x O y thin films.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1976

Sensitivity of inelastic response to numerical integration of strain energy

The exact solution to the quasi-static, inelastic response of a cantilever beam of rectangular cross section subjected to a bending moment at the tip is obtained. The material of the beam is assumed to be linearly elastic-linearly strain-hardening. This solution is then compared with three different numerical solutions of the same problem obtained by minimizing the total potential energy using Gaussian quadratures of two different orders and a Newton-Cotes scheme for integrating the strain energy of deformation. Significant differences between the exact dissipative strain energy and its numerical counterpart are emphasized. The consequence of this on the nonlinear transient responses of a beam with solid cross section and that of a thin-walled beam on elastic supports under impulsive loads are examined.

Kamat, M. P.↗
NASA NTRS1943

Least-work analysis of the problem of shear lag in box beams

The distribution of stress in the cover sheets of thin-wall box beams is analyzed, with regard to the effect of shear deformation in the cover sheets, by the method of least work. Explicit results are obtained for a number of representative cases that show the influence of the following factors on the stress patterns. (1) Variation of stress in spanwise direction as given by elementary beam theory. (2) Value of a parameter called shear-lag aspect ratio which designates the product of span-width ratio of the beam and of the square root of the ratio of effective shear modulus and tensing modulus of the cover sheets. (3) Value of ratio of cover-sheet stiffness to side-web stiffness. (4) Variation of beam height in span direction. (5) Variation of beam width in span direction. (6) Variation of cover-sheet thickness in span direction. General conclusions are drawn from the results obtained. Among them the most important one appears to be the fact that the shear-lag effect depends primarily on the following tow quantities: (1) the value of the shear-lag aspect ratio. (2) the shape of the curve representing the product of the stress of elementary beam theory and of the cover-sheet thickness.

STRESS CALCULATIONS, LEAST-WORK↗