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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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NASA NTRS2014

10 meter Sub-Orbital Large Balloon Reflector (LBR)

The realization of a large, space-based 10 meter class telescope for far-infrared/THz studies has long been a goal of NASA. Such a telescope could study the origins of stars, planets, molecular clouds, and galaxies; providing a much needed means of following-up on tantalizing results from recent successful missions such as Spitzer, Herschel, and SOFIA. Indeed, Herschel began its life in the US space program as the Large Deployable Reflector (LDR) to be assembled in low Earth orbit by shuttle astronauts. Escalating costs and smaller federal budget allocations resulted in a downsizing of the mission. However, by combining successful suborbital balloon and ground-based telescope technologies, the dream of a 10 meter class telescope free of ~99% of the Earth's atmospheric absorption in the far-infrared can be realized. The same telescope can also be used to perform sensitive, high spectral and spatial resolution limb sounding studies of the Earth's atmosphere in greenhouse gases such as CO, ClO, O3, and water, as well as serve as a high flying hub for any number of telecommunications and surveillance activities. Flight times of 100+ days will be possible, with instruments having mass and power requirements in excess of ~500 kg and ~1 kW.Here we present the results of our NIAC Step 1, Phase B design study where each key aspect of the LBR concept is discussed and recommendations made for further study in Phase II.These aspects include realization of a large spherical reflecting surface, spherical corrector, pointing system, instrument module, and service module/gondola. Once each hardware component is introduced, a typical LBR Mission profile is described that enables the realization of a stratospheric 10 meter THz observatory and limb sounder. Verification of the design approach was achieved by using a combination of analytical modelling, lab testing of materials and techniques, and building a 3 meter rooftop LBR prototype.

Telescope↗

NASA NTRS2009

Circuits Enhance Scientific Instruments and Safety Devices

Since its founding in 1958, NASA has pioneered the use of different frequencies on the electromagnetic spectrum - including X-ray, microwave, and infrared wavelengths - to gather information about distant celestial bodies. During the 1962 Mariner 2 mission, NASA used microwave radiometers that operated in the range of 15-23 gigahertz (GHz) to assess the surface temperature of Venus and to determine the percentage of water vapor in its atmosphere. Today, there is another area on the spectrum proving uniquely useful to scientists: the terahertz (THz) range, spanning from about 100 GHz-10,000 GHz. (1 THz equals approximately 1,000 GHz.) Terahertz frequencies span the lesser-known gap on the electromagnetic spectrum between microwave radiation and infrared (and visible) light, falling within the spectral range where most simple molecules resonate. This molecular resonance makes terahertz particularly useful for chemical spectroscopy and the remote sensing of specific molecules. In the 1990s, NASA began using frequencies above 300 GHz (more than an order of magnitude higher than the instrumentation on Mariner 2) to perform spectral analysis of molecular clouds and planetary atmospheres. Instruments using these higher frequencies have included the Microwave Limb Sounder (MLS) on the Upper Atmosphere Research Satellite (UARS), deployed from 1991-2001, and the Microwave Instrument for the Rosetta Orbiter (MIRO), launched in 2004. With UARS-MLS, NASA used advanced terahertz receivers to measure the emission signatures from atmospheric molecules, providing researchers with valuable data about the changes in the Earth s protective ozone layer. MIRO, set to rendezvous with the comet 67P Churyumov-Gerasimenko in 2014, will use terahertz instrumentation to analyze the comet s dust and gases. Although NASA has been a driving force behind the development of terahertz technology, scientific equipment for terahertz research - including transmitters, receivers, and basic test and measurement equipment - is not widely available, making scientific experiments in this range between traditional electronics and quantum photonics more costly and greatly limiting commercial development in the field. Given NASA s interest in studying distant bodies in space as well as in improving life on Earth, the Agency has collaborated with private industry to develop terahertz technologies.

Source record↗

NASA NTRS2010

Diamond Heat-Spreader for Submillimeter-Wave Frequency Multipliers

The planar GaAs Shottky diode frequency multiplier is a critical technology for the local oscillator (LO) for submillimeter- wave heterodyne receivers due to low mass, tenability, long lifetime, and room-temperature operation. The use of a W-band (75-100 GHz) power amplifier followed by a frequency multiplier is the most common for submillimeter-wave sources. Its greatest challenge is to provide enough input power to the LO for instruments onboard future planetary missions. Recently, JPL produced 800 mW at 92.5 GHz by combining four MMICs in parallel in a balanced configuration. As more power at W-band is available to the multipliers, their power-handling capability be comes more important. High operating temperatures can lead to degradation of conversion efficiency or catastrophic failure. The goal of this innovation is to reduce the thermal resistance by attaching diamond film as a heat-spreader on the backside of multipliers to improve their power-handling capability. Polycrystalline diamond is deposited by hot-filament chemical vapor deposition (CVD). This diamond film acts as a heat-spreader to both the existing 250- and 300-GHz triplers, and has a high thermal conductivity (1,000-1,200 W/mK). It is approximately 2.5 times greater than copper (401 W/mK) and 20 times greater than GaAs (46 W/mK). It is an electrical insulator (resistivity approx. equals 10(exp 15) Ohms-cm), and has a low relative dielectric constant of 5.7. Diamond heat-spreaders reduce by at least 200 C at 250 mW of input power, compared to the tripler without diamond, according to thermal simulation. This superior thermal management provides a 100-percent increase in power-handling capability. For example, with this innovation, 40-mW output power has been achieved from a 250-GHz tripler at 350-mW input power, while the previous triplers, without diamond, suffered catastrophic failures. This breakthrough provides a stepping-stone for frequency multipliers-based LO up to 3 THz. The future work for this design is to apply the high output power from both the 250 and 300 GHz to multiple chains in order to generate milliwatts at 2.3 THz. Using the first generation of results for this innovation, 40 mW of output power were produced from a 240-GHz tripler at 350-mW input power, and 27- mW output power was produced from a 300-GHz tripler at 408-mW input power. This is two times higher than the current state-of-the-art output power capability. A finite-element thermal simulation also shows that 30-microns thick diamond dropped the temperature of the anodes by at least 200 C.

Lin, Robert H.↗

NASA NTRS2004

T-shaped emitter metal heterojunction bipolar transistors for submillimeter wave applications

We report on the development of submillimeter wave transistors at JPL. The goal of the effort is to produce advance-reliable high frequency and high power amplifiers, voltage controlled oscillators, active multipliers, and high-speed mixed-signal circuits for space borne applications. The technology in development to achieve this is based on the Indium Phosphide (InP) Heterojunction Bipolar Transistor (HBT). The HBT is well suited for high speed, high power and uniform (across wafer) performance, due to the ability to tailor the material structure that electrons traverse through by well-controlled epitaxial growth methods. InP with its compatible lattice matched alloys such as indium gallium arsenide (InGaAs) and indium aluminium arsenide (InAlAs) provides for high electron velocities and high voltage breakdown capabilities. The epitaxial methods for this material system are fairly mature, however the implementation of high performance and reliable transistors are still under development by many laboratories. Our most recently fabricated, second generation mesa HBTs at JPL have extrapolated current gain cutoff frequency (FJ of 142GHz and power gain cutoff frequency (Fm,) of approximately 160GHz. This represents a 13% and 33% improvement of Ft and F, respectively, compared to the first generation mesa HBTs [l]. Analysis based on the University of California, Santa Barbara (UCSB) device model, RF device characteristics can be significantly improved by reducing base contact resistance and base metal contact width. We will describe our effort towards increasing transistor performance and yield.

transistor↗