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At least 91 records · Page 5

High-Temperature Superconducting/Ferroelectric Structures for Tunable Microwave Components

At the NASA Lewis Research Center, ferroelectric films, such as SrTiO3 and Ba(x)Sr(1-x)TiO3, are being used in conjunction with YBa2Cu3O(7-delta) high-temperature superconducting (HTS) thin films to fabricate tunable microwave components, such as filters, varactors, and local oscillators. These structures capitalize on the variation of the dielectric constant of the ferroelectric film upon the application of a dc electric field as well as on the low microwave losses exhibited by the high-temperature superconducting films relative to their conventional conductor counterparts. (For example, the surface resistance for a YBa2Cu3O(7-delta) thin film at 10 GHz and 77 K is more than two orders of magnitude lower than that of copper at the same frequency and temperature.) SrTiO3 and Ba(x)Sr(1-x)TiO3 films are used because their crystal structure and lattice parameters are similar to those of YBa2Cu3O(7-delta), thus enabling the growth of highly textured YBa2Cu3O(7-delta) films with high critical current densities on the underlying ferroelectric film, or alternatively, of highly textured ferroelectric film on the underlying YBa2Cu3O(7-delta) film. Our efforts have been concentrated so far in determining the deposition parameters required for optimal ferroelectric thin-film growth (i.e., maximum tunability and lowest loss) and in investigating different varactor configurations to determine which geometry is the most advantageous in terms of tunability, losses, and required bias for a given communication application. For example, we have observed that for optimized SrTiO3 films in a parallel plate capacitor, tunabilities of up to 47 percent and dissipation losses (tan d) of 0.05 are attainable at 1 MHz , 80 K, and within the 0- to 5-V bias range. In contrast, for an interdigital configuration, tunabilities of up to 70 percent and tan d ranging from 0.015 to 0.001 (depending on bias) have been observed at 1 MHz and 77 K within the 0- to 100-V bias range. Efforts are underway to use these results in developing tunable receiver front-end preselect filters as well as in low-phase noise, tunable local oscillators for K-band applications. These components represent a hitherto unavailable technology to meet the stringent performance requirements of foreseeable satellite and wireless communication systems (e.g., bandwidth, in-band insertion losses, out-of-band rejection, and noise, amongst others) in a more advantageous fashion than with currently available technology (e.g., dielectric-filled cavity and waveguide filters, and dielectric resonator oscillators). Prototypes of high-temperature superconducting/ferroelectric tunable components such as a low-phase noise K-band local oscillator, a preselect C-band filter, and a low-loss K-band phase shifter are under development at NASA Lewis.

Miranda, Felix A.

Communication satellite output devices

Semiconductor devices, tunnel diodes, transistors, varactor diodes, vacuum tube amplifiers, triodes, klystrons, and traveling wave tubes for communication satellite output devices

VACUUM TUBE

Cryogenic operation of GaAs based multiplier chains to 400 GHz

The FIRST/HIFI mission allows for the local oscillator frequency multiplier chains to be cooled to 120 - 150 K in order to increase available output power. This paper will discuss the implication of cooling on GaAs based planar Schottky diode varactors for flight applications.

cooled Schottky varactors

Design and Analysis of Broad-Band Fixed-Tuned Submillimeter-Waveguide Multipliers using MMIC Style Circuit Topology

The design and analysis of varactor diode doubler, quadrupler and cascaded doubler circuits for 320 and 640 GHz have been completed. A new approach has been employed to produce a tunerless waveguide mount with a very flexible, frequency scaleable, MMIC style multiplier circuit. The concept, design, predicted performance and measurements on some of the constituent mount elements are presented.

varactor diode doubler MMIC style multiplier circu

Phase modulator Patent

Phase modulator with tuned variable length electrical lines including coupling and varactor diode circuits

Brown, K. H.

Microwave device investigations

Several tasks were active during this report period: (1) noise modulation in avalanche-diode devices; (2) schottky-barrier microwave devices; (3) intermodulation products in IMPATT diode amplifiers; (4) harmonic generation using Read-diode varactors; and (5) fabrication of GaAs Schottky-barrier IMPATT diodes.

Haddad, G. I.

A 10, 6-micrometer laser receiver RF subsystem

A simplified laser receiver carrier tracking loop is described. The laser carrier is optically mixed with a locally generated 10.6 micrometer signal, thereby translating the received signal to an IF signal that varies between dc and GHz. This signal is fed to a second order carrier tracking loop that contains a transistor LC oscillator tuned by a varactor over a 1 GHz range; transistor shunt capacitance increases the upper frequency bound of the oscillator in a high Doppler environment.

Santarpia, D. E.

A millimeter-wave pumped X-band uncooled parametric amplifier.

GaAs Schottky barrier varactors with a cutoff frequency of 800 GHz are used in a balanced diode-type parametric amplifier operating with a signal frequency at 7.5 GHz. The room-temperature parameters of the amplifier are a gain of 15 dB, a bandwidth of 500 MHz, and an excess noise temperature of 63 K (a noise figure of 0.86 dB).

Dickens, L. E.

Microwave device investigations

Materials, devices and novel schemes for generation, amplification and detection of microwave and millimeter wave energy are studied. Considered are: (1) Schottky-barrier microwave devices; (2) intermodulation products in IMPATT diode amplifiers; and (3) harmonic generation using Read diode varactors.

Choudhury, K. K. D.

Ku-band miniature modulators

Ku-band microminiature modulators were designed to convert a 10 mW signal at 400 MHz to a 10 mW signal at 15 GHz. The designs incorporate gallium arsenide Schottky barrier varactors used in upper-sideband up-converters. The use of Ku-band microstrip circulators and hairpin resonator bandpass filters at 2.1 GHz and 2.5 GHz is included. The design and fabrication of a single up-conversion unit with a double up-conversion unit are compared. Various filter configurations are studies, and the use of both alumina and quartz substrates are considered. The various impedance matching networks are evaluated using computer aided design techniques.

Ernst, R. L.

Low distortion automatic phase control circuit

A voltage controlled phase shifter is rendered substantially harmonic distortion free over a large dynamic input range by employing two oppositely poled, equally biased varactor diodes as the voltage controlled elements which adjust the phase shift. Control voltages which affect the bias of both diodes equally are used to adjust the phase shift without increasing distortion. A feedback stabilized phase shifter is rendered substantially frequency independent by employing a phase detector to control the phase shift of the voltage controlled phase shifter.

Hauge, G.