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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS1988

Millimeter-wave diode-grid frequency doubler

Monolithic diode grids were fabricated on 2-cm square gallium-arsenide wafers in a proof-of-principle test of a quasi-optical varactor millimeter-wave frequency multiplier array concept. An equivalent circuit model based on a transmission-line analysis of plane wave illumination was applied to predict the array performance. The doubler experiments were performed under far-field illumination conditions. A second-harmonic conversion efficiency of 9.5 percent and output powers of 0.5 W were achieved at 66 GHz when the diode grid was pumped with a pulsed source at 33 GHz. This grid had 760 Schottky-barrier varactor diodes. The average series resistance was 27 ohms, the minimum capacitance was 18 fF at a reverse breakdown voltage of -3 V. The measurements indicate that the diode grid is a feasible device for generating watt-level powers at millimeter frequencies and that substantial improvement is possible by improving the diode breakdown voltage.

Jou, Christina F.↗
NASA NTRS2007

Detailed Studies of Pixelated CZT Detectors Grown with the Modified Horizontal Bridgman Method

The detector material Cadmium Zinc Telluride (CZT) achieves excellent spatial resolution and good energy resolution over a broad energy range, several keV up to some MeV. Presently, there are two main methods to grow CZT crystals, the Modified High-Pressure Bridgman (MHB) and the High-Pressure Bridgman (HPB) process. The study presented in this paper is based on MHB CZT substrates from the company Orbotech Medical Solutions Ltd. [Orbotech Medical Solutions Ltd., 10 Plaut St., Park Rabin, P.O. Box 2489, Rehovot, Israel, 76124]. Former studies have shown that high-work-function materials on the cathode side reduce the leakage current and, therefore, improve the energy resolution at lower energies. None of the studies have emphasized on the anode contact material. Therefore, we present in this paper the result of a detailed study in which for the first time the cathode material was kept constant and the anode material was varied. We used four different anode materials: Indium, Titanium, Chromium and Gold, metals with work-functions between 4.1 eV and 5.1 eV. The detector size was 2.0 x 2.0 x 0.5 cu cm with 8 x 8 pixels and a pitch of 2.46 mm. The best performance was achieved with the low-work-function materials Indium and Titanium with energy resolutions of 2.0 keV (at 59 keV) and 1.9 keV (at 122 keV) for Titanium and 2.1 keV (at 59 keV) and 2.9 keV (at 122 keV) for Indium. Taking into account the large pixel pitch of 2.46 mm, these resolutions are very competitive in comparison to those achieved with detectors made of material produced with the more expensive conventional HPB method. We present a detailed comparison of our detector response with 3D simulations. The latter comparisons allow us to determine the mobility-lifetime-products (mu tau-products) for electrons and holes. Finally, we evaluated the temperature dependency of the detector performance and ls-products. For many applications temperature dependence is important, therefore, we extended the scope of our study to temperatures as low as -30 C. There are two important results. The breakdown voltage increases with decreasing temperature, and electron mobility-lifetime-product decreases by about 30% over a range from 20 C to -30 C. The latter effect causes the energy resolution to deteriorate, but the concomitantly increasing breakdown voltage makes it possible to increase the applied bias voltage and restore the full performance

Jung, I.↗
NASA NTRS2010

Physical and Electrical Characterization of Aluminum Polymer Capacitors

Conductive polymer aluminum capacitor (PA capacitor) is an evolution of traditional wet electrolyte aluminum capacitors by replacing liquid electrolyte with a solid, highly conductive polymer. On the other hand, the cathode construction in polymer aluminum capacitors with coating of carbon and silver epoxy for terminal connection is more like a combination of the technique that solid tantalum capacitor utilizes. This evolution and combination result in the development of several competing capacitor construction technologies in manufacturing polymer aluminum capacitors. The driving force of this research on characterization of polymer aluminum capacitors is the rapid progress in IC technology. With the microprocessor speeds exceeding a gigahertz and CPU current demands of 80 amps and more, the demand for capacitors with higher peak current and faster repetition rates bring conducting polymer capacitors to the center o( focus. This is because this type of capacitors has been known for its ultra-low ESR and high capacitance. Polymer aluminum capacitors from several manufacturers with various combinations of capacitance, rated voltage, and ESR values were obtained and tested. The construction analysis of the capacitors revealed three different constructions: conventional rolled foil, the multilayer stacking V-shape, and a dual-layer sandwich structure. The capacitor structure and its impact on the electrical characteristics has been revealed and evaluated. A destructive test with massive current over stress to fail the polymer aluminum capacitors reveals that all polymer aluminum capacitors failed in a benign mode without ignition, combustion, or any other catastrophic failures. The extraordinary low ESR (as low as 3 mOMEGA), superior frequency independence reported for polymer aluminum capacitors have been confirmed. For the applications of polymer aluminum capacitors in space programs, a thermal vacuum cycle test was performed. The results, as expected, show no impact on the electrical characteristics of the capacitors. The breakdown voltage of polymer capacitors has been evaluated using a steady step surge test. Initial results show the uniform distribution in the breakdown voltage for polymer aluminum capacitors. Polymer aluminum capacitors with a combination of very high capacitance, extraordinary low ESR, excellent frequency stability, and non-ignite benign failure mode make it a niche fit in space applications for both today and future. Polymer capacitors are apparently also the best substitutes of the currently used MnO2-based tantalum capacitors in the low voltage range. However, some critical aspects are still to be addressed in the next phase of the investigation for PA capacitors. These include the long term reliability test of 125 C dry life and 85 C/85%RH humidity, the failure mechanism and de-rating, the radiation tolerance, and the high temperature performance. All of the above requires the continuous NEPP funding and support.

Liu, David (Donghang)↗
NASA NTRS1994

An Acoustic Charge Transport Imager for High Definition Television Applications: Reliability Modeling and Parametric Yield Prediction of GaAs Multiple Quantum Well Avalanche Photodiodes

Reliability modeling and parametric yield prediction of GaAs/AlGaAs multiple quantum well (MQW) avalanche photodiodes (APDs), which are of interest as an ultra-low noise image capture mechanism for high definition systems, have been investigated. First, the effect of various doping methods on the reliability of GaAs/AlGaAs multiple quantum well (MQW) avalanche photodiode (APD) structures fabricated by molecular beam epitaxy is investigated. Reliability is examined by accelerated life tests by monitoring dark current and breakdown voltage. Median device lifetime and the activation energy of the degradation mechanism are computed for undoped, doped-barrier, and doped-well APD structures. Lifetimes for each device structure are examined via a statistically designed experiment. Analysis of variance shows that dark-current is affected primarily by device diameter, temperature and stressing time, and breakdown voltage depends on the diameter, stressing time and APD type. It is concluded that the undoped APD has the highest reliability, followed by the doped well and doped barrier devices, respectively. To determine the source of the degradation mechanism for each device structure, failure analysis using the electron-beam induced current method is performed. This analysis reveals some degree of device degradation caused by ionic impurities in the passivation layer, and energy-dispersive spectrometry subsequently verified the presence of ionic sodium as the primary contaminant. However, since all device structures are similarly passivated, sodium contamination alone does not account for the observed variation between the differently doped APDs. This effect is explained by the dopant migration during stressing, which is verified by free carrier concentration measurements using the capacitance-voltage technique.

Hunt, W. D.↗
NASA NTRS1998

Non-Micropipe Dislocations in 4H-SiC Devices: Electrical Properties and Device Technology Implications

It is well-known that SiC wafer quality deficiencies are delaying the realization of outstandingly superior 4H-SiC power electronics. While efforts to date have centered on eradicating micropipes (i.e., hollow core super-screw dislocations with Burgers vectors greater than or equal to 2c), 4H-SiC wafers and epilayers also contain elementary screw dislocations (i.e., Burgers vector = 1c with no hollow core) in densities on the order of thousands per sq cm, nearly 100-fold micropipe densities. While not nearly as detrimental to SiC device performance as micropipes, it has recently been demonstrated that elementary screw dislocations somewhat degrade the reverse leakage and breakdown properties of 4H-SiC p(+)n diodes. Diodes containing elementary screw dislocations exhibited a 5% to 35% reduction in breakdown voltage, higher pre-breakdown reverse leakage current, softer reverse breakdown I-V knee, and microplasmic breakdown current filaments that were non-catastrophic as measured under high series resistance biasing. This paper details continuing experimental and theoretical investigations into the electrical properties of 4H-SiC elementary screw dislocations. The nonuniform breakdown behavior of 4H-SiC p'n junctions containing elementary screw dislocations exhibits interesting physical parallels with nonuniform breakdown phenomena previously observed in other semiconductor materials. Based upon experimentally observed dislocation-assisted breakdown, a re-assessment of well-known physical models relating power device reliability to junction breakdown has been undertaken for 4H-SiC. The potential impact of these elementary screw dislocation defects on the performance and reliability of various 4H-SiC device technologies being developed for high-power applications will be discussed.

Neudeck, Philip G.↗
NASA NTRS1980

Radiant energy to electric energy converter

Radiant energy is converted into electric energy by irradiating a capacitor including an ionic dielectric. The dielectric is a sintered crystal superionic conductor, e.g., lanthanum trifluoride, lanthanum trichloride, or silver bromide, so that a multiplicity of crystallites exist between electrodes of the capacitor. The radiant energy cyclically irradiates the dielectric so that the dielectric exhibits a cyclic photocapacitive like effect. Adjacent crystallites have abutting surfaces that enable the crystallites to effectively form a multiplicity of series capacitor elements between the electrodes. Each of the capacitor elements has a dipole layer only on or near its surface. The capacitor is initially charged to a voltage just below the dielectric breakdown voltage by connecting it across a DC source causing a current to flow through a charging resistor to the dielectric. The device can be utilized as a radiant energy detector or as a solar energy cell.

Sher, Arden↗
NASA NTRS2015

Evaluation of Case Size 0603 BME Ceramic Capacitors

High volumetric efficiency of commercial base metal electrode (BME) ceramic capacitors allows for a substantial reduction of weight and sizes of the parts compared to currently used military grade precious metal electrode (PME) capacitors. Insertion of BME capacitors in space applications requires a thorough analysis of their performance and reliability. In this work, six types of cases size 0603 BME capacitors from three vendors have been evaluated. Three types of multilayer ceramic capacitors (MLCCs) were designed for automotive industry and three types for general purposes. Leakage currents in the capacitors have been measured in a wide range of voltages and temperatures, and measurements of breakdown voltages (VBR) have been used to assess the proportion and severity of defects in the parts. The effect of soldering-related thermal shock stresses was evaluated by analysis of distributions of VBR for parts in 'as is' condition and after terminal solder dip testing at 350 C. Highly Accelerated Life Testing (HALT) at different temperatures was used to assess the activation energy of degradation of leakage currents and predict behavior of the parts at life test and normal operating conditions. To address issues related to rework and manual soldering, capacitors were soldered onto different substrates at different soldering conditions. The results show that contrary to a common assumption that large-size capacitors are mostly vulnerable to soldering stresses, cracking in small size capacitors does happen unless special measures are taken during assembly processes.

testing↗
NASA NTRS1993

Near-equilibrium growth of thick, high quality beta-SiC by sublimation

A close spaced near-equilibrium growth technique was used to produce thick, high quality epitaxial layers of beta-silicon carbide. The process utilized a sublimation method to grow morphologically smooth layers. The beta silicon carbide growth layers varied from about 200 to 750 microns in thickness. Chemical vapor deposition grown, 2-10 microns, beta silicon carbide films were used as seeds at 1860 and 1910 C growth temperatures. The respective average growth rates were 20 and 30 microns per hour. The layers are p-type with a 3.1 x 10 exp 17/cu cm carrier concentration. Electrical measurements indicate considerable improvement in the breakdown voltage of Schottky barriers on growth samples. Breakdown values ranged from 25 to 60 V. These measurements represent the highest values reported for 3C-SiC.

Shields, Virgil B.↗
NASA NTRS1994

Plasma Deposited SiO2 for Planar Self-Aligned Gate Metal-Insulator-Semiconductor Field Effect Transistors on Semi-Insulating InP

Metal-insulator-semiconductor (MIS) field effect transistors were fabricated on InP substrates using a planar self-aligned gate process. A 700-1000 A gate insulator of Si02 doped with phosphorus was deposited by a direct plasma enhanced chemical vapor deposition at 400 mTorr, 275 C, 5 W, and power density of 8.5 MW/sq cm. High frequency capacitance-voltage measurements were taken on MIS capacitors which have been subjected to a 700 C anneal and an interface state density of lxl0(exp 11)/eV/cq cm was found. Current-voltage measurements of the capacitors show a breakdown voltage of 107 V/cm and a insulator resistivity of 10(exp 14) omega cm. Transistors were fabricated on semi-insulating InP using a standard planar self-aligned gate process in which the gate insulator was subjected to an ion implantation activation anneal of 700 C. MIS field effect transistors gave a maximum extrinsic transconductance of 23 mS/mm for a gate length of 3 microns. The drain current drift saturated at 87.5% of the initial current, while reaching to within 1% of the saturated value after only 1x10(exp 3). This is the first reported viable planar InP self-aligned gate transistor process reported to date.

Tabory, Charles N.↗
NASA NTRS1987

Stressed photoconductive detector for far-infrared space applications

An optimized leaf-spring apparatus for applying uniaxial stress to a Ge:Ga far-IR photoconductor has been designed and tested. This design has significant advantages for space applications which require high quantum efficiency and stable operation over long periods of time. The important features include adequate spring deflection with relatively small overall size, torque-free stress, easy measurement of applied stress, and a detector configuration with high responsivity. One-dimensional arrays of stressed photoconductors can be constructed using this design. A peak responsivity of 38 A/W is achieved in a detector with a cutoff wavelength of 200 microns, which was operated at a temperature of 2.0 K and a bias voltage equal to one-half of the breakdown voltage.

Wang, J.-Q.↗
NASA NTRS1989

Monolithically integrated two-dimensional arrays of optoelectronic threshold devices for neural network applications

A monolithic 10 x 10 two-dimensional array of 'optical neuron' optoelectronic threshold elements for neural network applications has been designed, fabricated, and tested. Overall array dimensions are 5 x 5 mm, while the individual neurons, composed of an LED that is driven by a double-heterojunction bipolar transistor, are 250 x 250 microns. The overall integrated structure exhibited semiconductor-controlled rectifier characteristics, with a breakover voltage of 75 V and a reverse-breakdown voltage of 60 V; this is attributable to the parasitic p-n-p transistor which exists as a result of the sharing of the same n-AlGaAs collector between the transistors and the LED.

Kim, J. H.↗
NASA NTRS2003

Design and Varactors: Operational Considerations. A Reliability Study for Robust Planar GaAs

Preliminary conclusions include: Limits for reverse currents cannot be set. Based on current data we want to avoid any reverse bias current. We know 1 micro-A is too high. Leakage current gets suppressed when operated at 120K. Migration and verification: a) Reverse Bias Voltage will be limited; b) Health check with I/V curve: 1) Minimal reverse voltage shall be x0.75 of the calculated voltage breakdown Vbr; 2) Degradation of the Reverse Bias voltage at given current will be used as indication of ESD incidents or other Damages (high RF power, heat); 3) Calculation of diodes parameter to verify initial health check result in forward direction. RF output power starts to degrade when diode I/V curve is very strongly degraded only. Experienced on 400GHz doubler and 200GHz doubler

THz frequencies↗
NASA NTRS1972

Shielded silicon gate complementary MOS integrated circuit.

An electrostatic shield for complementary MOS integrated circuits was developed to minimize the adverse effects of stray electric fields created by the potentials in the metal interconnections. The process is compatible with silicon gate technology. N-doped polycrystalline silicon was used for all the gates and the shield. The effectiveness of the shield was demonstrated by constructing a special field plate over certain transistors. The threshold voltages obtained on an oriented silicon substrate ranged from 1.5 to 3 V for either channel. Integrated inverters performed satisfactorily from 3 to 15 V, limited at the low end by the threshold voltages and at the high end by the drain breakdown voltage of the n-channel transistors. The stability of the new structure with an n-doped silicon gate as measured by the shift in C-V curve under 200 C plus or minus 20 V temperature-bias conditions was better than conventional aluminum gate or p-doped silicon gate devices, presumably due to the doping of gate oxide with phosphorous.

Lin, H. C.↗
NASA NTRS1977

Inert gas thrusters

Inert gases, particularly argon and xenon, are of interest as possible alternatives to the usual electric thruster propellants of mercury and cesium. Hollow cathode data were obtained for a wide range of operating conditions. Some test conditions gave plasma coupling voltages at or below the sputtering threshold, hence should permit long operating lifetimes. All observations of hollow cathode operation were consistent with a single theory of operation, in which a significant amount of the total electron emission is from localized areas within the orifice. This mode of emission is also supported by scanning electron microscope photographs that indicate local temperatures at or near the melting temperature of the tungsten tip. Experimental hollow cathode performance was correlated for two orifice diameters, three inert gas propellants, and a range of flow rates for each propellant. The basic theory for the production of doubly ionized argon and xenon was completed. Experimental measurements of the doubly ionized fraction agree with theory within about plus or minus 20 percent. High voltage isolators were studied for the propellant feed line. The breakdown voltage per segment ranged from 300 to over 500 V with argon.

Kaufman, H. R.↗
NASA NTRS2011

Rad-Hard, Miniaturized, Scalable, High-Voltage Switching Module for Power Applications Rad-Hard, Miniaturized

A paper discusses the successful development of a miniaturized radiation hardened high-voltage switching module operating at 2.5 kV suitable for space application. The high-voltage architecture was designed, fabricated, and tested using a commercial process that uses a unique combination of 0.25 micrometer CMOS (complementary metal oxide semiconductor) transistors and high-voltage lateral DMOS (diffusion metal oxide semiconductor) device with high breakdown voltage (greater than 650 V). The high-voltage requirements are achieved by stacking a number of DMOS devices within one module, while two modules can be placed in series to achieve higher voltages. Besides the high-voltage requirements, a second generation prototype is currently being developed to provide improved switching capabilities (rise time and fall time for full range of target voltages and currents), the ability to scale the output voltage to a desired value with good accuracy (few percent) up to 10 kV, to cover a wide range of high-voltage applications. In addition, to ensure miniaturization, long life, and high reliability, the assemblies will require intensive high-voltage electrostatic modeling (optimized E-field distribution throughout the module) to complete the proposed packaging approach and test the applicability of using advanced materials in a space-like environment (temperature and pressure) to help prevent potential arcing and corona due to high field regions. Finally, a single-event effect evaluation would have to be performed and single-event mitigation methods implemented at the design and system level or developed to ensure complete radiation hardness of the module.

Adell, Philippe C.↗