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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Mapping Thermal Conductivity at the Atomic Scale: A Step toward the Thermal Design of Materials

We describe a spatial decomposition of the thermal conductivity, termed site-projected thermal conductivity, which quantifies the thermal conduction activity at each atomic site—a critical parameter for the thermal design of materials. The method is based on the Green–Kubo formula and the harmonic approximation and requires the force-constant and dynamical matrices, as well as a relaxed structural model. Throughout the study, it uses high quality models previously tested and compared to many experiments. It discusses the method and underlying approximations for amorphous silicon, carries the detailed analysis for amorphous silicon, and then examines an amorphous-crystal silicon interface and representative carbon materials. This study identifies the sites and local structures that reduce heat transport, and quantify these (estimate the spatial range) over which these “thermal defects” are effective. It identifies filamentary structures in the amorphous silicon network which impact heat transport and electronic structure (the Urbach edge) and electronic transport.

36 MATERIALS SCIENCE↗
NASA NTRS1988

Conceptual design of a lunar base solar power plant lunar base systems study task 3.3

The best available concepts for a 100 kW Solar Lunar Power Plant based on static and dynamic conversion concepts have been examined. The two concepts which emerged for direct comparison yielded a difference in delivered mass of 35 MT, the mass equivalent of 1.4 lander payloads, in favor of the static concept. The technologies considered for the various elements are either state-of-the-art or near-term. Two photovoltaic cell concepts should receive high priority for development: i.e., amorphous silicon and indium phosphide cells. The amorphous silicon, because it can be made so light weight and rugged; and the indium phosphide, because it shows very high efficiency potential and is reportedly not degraded by radiation. Also the amorphous silicon cells may be mounted on flexible backing that may roll up much like a carpet for compact storage, delivery, and ease of deployment at the base. The fuel cell and electrolysis cell technology is quite well along for lunar base applications, and because both the Shuttle and the forthcoming Space Station incorporate these devices, the status quo will be maintained. Early development of emerging improvements should be implemented so that essential life verification test programs may commence.

Source record↗
NASA NTRS1991

Design, optimization, and analysis of a self-deploying PV tent array

A tent shaped PV array was designed and the design was optimized for maximum specific power. In order to minimize output power variation a tent angle of 60 deg was chosen. Based on the chosen tent angle an array structure was designed. The design considerations were minimal deployment time, high reliability, and small stowage volume. To meet these considerations the array was chosen to be self-deployable, form a compact storage configuration, using a passive pressurized gas deployment mechanism. Each structural component of the design was analyzed to determine the size necessary to withstand the various forces to which it would be subjected. Through this analysis the component weights were determined. An optimization was performed to determine the array dimensions and blanket geometry which produce the maximum specific power for a given PV blanket. This optimization was performed for both lunar and Martian environmental conditions. Other factors such as PV blanket types, structural material, and wind velocity (for Mars array), were varied to determine what influence they had on the design point. The performance specifications for the array at both locations and with each type of PV blanket were determined. These specifications were calculated using the Arimid fiber composite as the structural material. The four PV blanket types considered were silicon, GaAs/Ge, GaAsCLEFT, and amorphous silicon. The specifications used for each blanket represented either present day or near term technology. For both the Moon and Mars the amorphous silicon arrays produced the highest specific power.

Collozza, Anthony J.↗
NASA NTRS1983

Photovoltaic research and development in Japan

The status of the Japanese photovoltaic (PV) R&D activities was surveyed through literature searches, private communications, and site visits in 1982. The results show that the Japanese photovoltaic technology is maturing rapidly, consistent with the steady government funding under the Sunshine Project. Two main thrusts of the Project are: (1) completion of the solar panel production pilot plants using cast ingot and sheet silicon materials, and (2) development of large area amorphous silicon solar cells with acceptable efficiency (10 to 12%). An experimental automated solar panel production plant rated at 500 kW/yr is currently under construction for the Sunshine Project for completion in March 1983. Efficiencies demonstrated by experimental large are amorphous silicon solar cells are approaching 8%. Small area amorphous silicon solar cells are, however, currently being mass produced and marketed by several companies at an equivalent annual rate of 2 MW/yr for consumer electronic applications. There is no evidence of an immediate move by the Japanese PV industry to enter extensively into the photovoltaic power market, domestic or otherwise. However, the photovoltaic technology itself could become ready for such an entry in the very near future, especially by making use of advanced process automation technologies.

Shimada, K.↗
NASA NTRS1986

Sensitivity analysis for solar plates

Economic evaluation methods and analyses of emerging photovoltaic (PV) technology since 1976 was prepared. This type of analysis was applied to the silicon research portion of the PV Program in order to determine the importance of this research effort in relationship to the successful development of commercial PV systems. All four generic types of PV that use silicon were addressed: crystal ingots grown either by the Czochralski method or an ingot casting method; ribbons pulled directly from molten silicon; an amorphous silicon thin film; and use of high concentration lenses. Three technologies were analyzed: the Union Carbide fluidized bed reactor process, the Hemlock process, and the Union Carbide Komatsu process. The major components of each process were assessed in terms of the costs of capital equipment, labor, materials, and utilities. These assessments were encoded as the probabilities assigned by experts for achieving various cost values or production rates.

Aster, R. W.↗
NASA NTRS1989

Lunar production of solar cells - A near-term product for a lunar industrial facility

Because of the much lower escape velocity, there is a great advantage in manufacture of solar cells for use in space on the moon rather than on earth. Silicon is abundant on the moon, and new refining methods allow it to be reduced and purified without extensive reliance on materials unavailable on the moon. Silicon and amorphous silicon solar cells could be manufactured on the moon for use in space.

Landis, Geoffrey A.↗
NASA NTRS1999

Dynamics of the Molten Contact Line

The purpose of this program is to develop a basic understanding of how a molten material front spreads over a solid that is below its melting point, arrests, and freezes. Our hope is that the work will contribute toward a scientific knowledge base for certain new applications involving molten droplet deposition, including the "printing" of arbitrary three-dimensional objects by precise deposition of individual molten microdrops that solidify after impact. Little information is available at this time on the capillarity-driven motion and arrest of molten contact line regions. Schiaffino and Sonin investigated the arrest of the contact line of a molten microcrystalline wax spreading over a subcooled solid "target" of the same material. They found that contact line arrest takes place at an apparent liquid contact angle that depends primarily on the Stefan number S=c(T(sub f) -T(sub t)/L based on the temperature difference between the fusion point and the target temperature, and proposed that contact line arrest occurs when the liquid's dynamic contact angle approaches the angle of attack of the solidification front just behind the contact line. They also showed, however, that the conventional continuum equations and boundary conditions have no meaningful solution for this angle. The solidification front angle is determined by the heat flux just behind the contact line, and the heat flux is singular at that point. By comparing experiments with numerical computations, Schiaffino and Sonin estimated that the conventional solidification model must break down within a distance of order 0.1 - 1 microns of the contact line. The physical mechanism for this breakdown is as yet undetermined, and no first-principles theory exists for the contact angle at arrest. Schiaffino and Sonin also presented a framework for understanding how to moderate Weber number molten droplet deposition in terms of similarity laws and experimentation. The study is based on experiments with three molten materials- molten wax on solid wax, water on ice, and mercury on frozen mercury- which between them span a considerable range of the deposition/solidification similarity parameters. Correlations are obtained for the spreading velocity, spreading time scales, the spreading factor (i.e. ratio of deposited drop's final footprint radius and the drop's initial radius), post-spreading liquid oscillation amplitudes and time scales, and bulk solidification time scales. Duthaler carried out an experimental and theoretical investigation of the relationship between the liquid's apparent contact angle and the Capillary number Ca=mu U/sigma based on contact line speed, for molten materials spreading over subcooled solids. This relationship is required for modeling of melt spreading. We have adapted Voinov's methodology to the molten contact line and formulated a theoretical model for the Ca vs. contact angle relationship, based Schiaffino and Sonin#s (1997a,b) wedge-like solidification front model. With the solidification front angle taken from Schiaffino and Sonin, the model is in good agreement with the experimental results for Ca vs. contact angle. Duthaler also extended the experimental investigation of droplet deposition and contact line freezing to more materials, including solder on glass, solder on solder, water on ice, and molten microcrystalline wax on wax. The latter also included tests on inclined targets. Deposition tests have also been done with molten octacosane (C28H58) on various targets. An important objective of our program has been the development of micron-scale sensors for measuring the transient temperature at a point on the substrate surface as a molten contact line moves over it. The expectation is that this temperature history will yield a better understanding of the thermal process in the contact line region. The sensors are of the thermistor type, either 2.5 microns or 1.5 microns square, microfabricated with silicon-based technology on either pure silicon or amorphous silicon dioxide chips. Each chip has 32 sensors distributed on its surface in arrays. The time response is better than 10 ms. At the time of writing, sensor calibration is in progress. Results on thermal transients during contact line passage will be discussed at the conference. While we expect that the data will provide information on the near-contact-line heat transfer process, we also foresee possible problems. First, the spatial resolution of the sensors may be insufficient to resolve the near-contact-line region. Second, the sensors protrude about 0.5 microns above the substrate surface, and may affect the contact line motion. Third, a sensor's temperature history depends on both the heat flux distribution into it from the fusion front and the thermal properties of the substrate below it and the solidified melt between it and the fusion front. The heat flux distribution in the contact line region must therefore be unfolded from computations of the overall system's transient thermal response.

Sonin, Ain A.↗
DOE OSTI2019

Infrared absorption cross section of SiN x thin films

At the molecular level, resonant coupling of infrared radiation with oscillations of the electric dipole moment determines the absorption cross section, $σ$. The parameter σ relates the bond density to the total integrated absorption. In this work, $σ$ was measured for the Si–N asymmetric stretch mode in SiN x thin films of varying composition and thickness. Thin films were deposited by low pressure chemical vapor deposition at 850 °C from mixtures of dichlorosilane and ammonia. σ for each film was determined from Fourier transform infrared spectroscopy and ellipsometric measurements. Increasing the silicon content from 0% to 25% volume fraction amorphous silicon led to increased optical absorption and a corresponding systematic increase in σ from 4.77 × 10 –20 to 6.95 × 10 –20 cm 2 , which is consistent with literature values. The authors believe that this trend is related to charge transfer induced structural changes in the basal SiN x tetrahedron as the volume fraction of amorphous silicon increases. Furthermore, experimental $σ$ values were used to calculate the effective dipole oscillating charge, q, for four films of varying composition. The authors find that q increases with increasing amorphous silicon content, indicating that compositional factors contribute to modulation of the Si–N dipole moment. Additionally, in the composition range investigated, the authors found that $σ$ agrees favorably with trends observed in films deposited by plasma enhanced chemical vapor deposition.

36 MATERIALS SCIENCE↗
NASA NTRS1993

Study of the Staebler-Wronski degradation effect in a-Si:H based p-i-n solar cell

Conversion of solar energy into electricity using environmentally safe and clean photovoltaic methods to supplement the ever increasing energy needs has been a cherished goal of many scientists and engineers around the world. Photovoltaic solar cells on the other hand, have been the power source for satellites ever since their introduction in the early sixties. For widespread terrestrial applications, however, the cost of photovoltaic systems must be reduced considerably. Much progress has been made in the recent past towards developing economically viable terrestrial systems, and the future looks highly promising. Thin film solar cells offer cost reductions mainly from their low processing cost, low material cost, and choice of low cost substrates. These are also very attractive for space applications because of their high power densities (power produced per kilogram of solar cell pay load) and high radiation resistance. Amorphous silicon based solar cells are amongst the top candidates for economically viable terrestrial and space based power generation. Despite very low federal funding during the eighties, amorphous silicon solar cell efficiencies have continually been improved - from a low 3 percent to over 13 percent now. Further improvements have been made by the use of multi-junction tandem solar cells. Efficiencies close to 15 percent have been achieved in several labs. In order to be competitive with fossil fuel generated electricity, it is believed that module efficiency of 15 percent or cell efficiency of 20 percent is required. Thus, further improvements in cell performance is imperative. One major problem that was discovered almost 15 years ago in amorphous silicon devices is the well known Staebler-Wronski Effect. Efficiency of amorphous silicon solar cells was found to degrade upon exposure to sunlight. Until now their is no consensus among the scientists on the mechanism for this degradation. Efficiency may degrade anywhere from 10 percent to almost 50 percent within the first few months of operation. In order to improve solar cell efficiencies, it is clear that the cause or causes of such degradation must be found and the processing conditions altered to minimize the loss in efficiency. This project was initiated in 1987 to investigate a possible link between metallic impurities, in particular, Ag, and this degradation. Such a link was established by one of the NASA scientists for the light induced degradation of n+/p crystalline silicon solar cells.

Naseem, H. A.↗
DOE OSTI2020

Isolating p- and n-Doped Fingers With Intrinsic Poly-Si in Passivated Interdigitated Back Contact Silicon Solar Cells

Polycrystalline silicon on silicon oxide (poly-Si/SiO x ) passivating contacts enable ultra high efficiency interdigitated back contact silicon solar cells. To prevent shunt between n- and p-type doped fingers, an insulating region is required between them. We evaluate the use of intrinsic poly Si for this isolation region. Interdigitated fingers were formed by plasma deposition of doped hydrogenated amorphous silicon through mechanically aligned shadow masks, on top of a full-area intrinsic amorphous silicon layer. High temperature annealing then crystallized the a-Si:H to poly Si and drove in the dopants. Two mechanisms were identified which cause contamination of the intrinsic poly Si gap during processing. During deposition of doped fingers, we show using secondary ion mass spectrometry and conductivity measurements that the intrinsic gap becomes contaminated by doped a-Si:H tails several nanometers thick to concentrations of ~10 20 cm -3 . Another source of contamination occurs during high-temperature annealing, where dopants desorb from doped regions and readsorb onto intrinsic a Si:H. Both pathways reduce the resistivity of the intrinsic gap from ~10 5 Ω·cm to ~10 -1 Ω·cm. We show that plasma etching of the a-Si:H surface before crystallizing with a capping layer can eliminate the contamination of the intrinsic poly-Si, maintaining a resistivity of ~10 5 Ω·cm. Lastly, this demonstrates masked plasma deposition as a dopant patterning method for Si solar cells.

14 SOLAR ENERGY↗
DOE OSTI2021

CdSexTe1-x/CdTe Devices with Reduced Interface Recombination Through Novel Back Contacts and Group-V Doping

Since excellent carrier lifetimes and front interface electronic quality are now achieved, rear interface recombination can limit V OC in CdSexTe1-x/CdTe solar cells. Several back-contact structures for devices were fabricated using combinations of tellurium, aluminum oxide, amorphous silicon, and indium tin oxide (ITO). Time-resolved photoluminescence was used to characterize such structures. We show increasingly improved interface passivation through the subsequent use of aluminum oxide, amorphous silicon, and ITO. Additionally, we show that arsenic-doped absorbers form a more passive interface with numerous back contact structures.

aluminum oxide↗
NASA NTRS1993

A photovoltaic catenary-tent array for the Martian surface

To provide electrical power during an exploration mission to Mars, a deployable tent-shaped structure with a flexible photovoltaic (PV) blanket is proposed. The array is designed with a self-deploying mechanism utilizing pressurized gas expansion. The structural design for the array uses a combination of cables, beams, and columns to support and deploy the PV blanket. Under the force of gravity, a cable carrying a uniform load will take the shape of a catenary curve. A catenary-tent collector is self shading which must be taken into account in the solar radiation calculation. The shape and the area of the shadow on the array was calculated and used in the determination of the global irradiance on the array. The PV blanket shape and structure dimensions were optimized to achieve a configuration which maximizes the specific power (W/kg). The optimization was performed for three types of PV blankets (silicon, gallium arsenide over germanium, and amorphous silicon) and two types of structural materials (carbon composite and arimid fiber composite). The results show that the catenary shape of the PV blanket corresponding to zero end angle at the base with respect to the horizontal results in the highest specific power. The tent angle is determined by optimizing the specific mass and the output power for maximum specific power. The combination of carbon fiber structural material and amorphous silicon blanket produces the highest specific power.

Colozza, Anthony J.↗
NASA NTRS1992

Tribological evaluation and analysis of coating materials

A physical characterization of coating materials by analytical techniques such as XPS, AES, ellipsometry, and nuclear reaction analysis can contribute to the understanding of adhesion and friction of the coatings and can partially predict the tribological properties of the coatings. This two-part paper describes the tribological properties and physical characteristics of (1) diamondlike carbon (DLC) films and (2) silicon nitride (SiN(x)) films. Emphasis is to relate plasma deposition conditions to the film chemistry and composition and to the adhesion and friction of the films. With the DLC films, the higher the plasma deposition power, the less the hydrogen concentration and the greater the film density and the hardness. The friction behavior of DLC films deposited at higher deposition powers (200 to 300 W) is similar to that of bulk diamond. Even in a vacuum, the DLC films effectively lubricate ceramic surfaces (Si3N4) at temperatures to 500 C. With SiN(x) films, the silicon to nitrogen ratios and the amount of amorphous silicon depend on deposition frequency. The presence of rich amorphous silicon in the high-frequency plasma-deposited SiN(x) films increases their adhesion and friction above 500 C in vacuum.

Miyoshi, Kazuhisa↗
NASA NTRS1991

Radiation resistance of thin-film solar cells for space photovoltaic power

Copper indium diselenide, cadmium telluride, and amorphous silicon alloy solar cells have achieved noteworthy performance and are currently being studied for space power applications. Cadmium sulfide cells had been the subject of much effort but are no longer considered for space applications. A review is presented of what is known about the radiation degradation of thin film solar cells in space. Experimental cadmium telluride and amorphous silicon alloy cells are reviewed. Damage mechanisms and radiation induced defect generation and passivation in the amorphous silicon alloy cell are discussed in detail due to the greater amount of experimental data available.

Woodyard, James R.↗
NASA NTRS2012

Vapor Pressure and Evaporation Coefficient of Silicon Monoxide over a Mixture of Silicon and Silica

The evaporation coefficient and equilibrium vapor pressure of silicon monoxide over a mixture of silicon and vitreous silica have been studied over the temperature range (1433 to 1608) K. The evaporation coefficient for this temperature range was (0.007 plus or minus 0.002) and is approximately an order of magnitude lower than the evaporation coefficient over amorphous silicon monoxide powder and in general agreement with previous measurements of this quantity. The enthalpy of reaction at 298.15 K for this reaction was calculated via second and third law analyses as (355 plus or minus 25) kJ per mol and (363.6 plus or minus 4.1) kJ per mol respectively. In comparison with previous work with the evaporation of amorphous silicon monoxide powder as well as other experimental measurements of the vapor pressure of silicon monoxide gas over mixtures of silicon and silica, these systems all tend to give similar equilibrium vapor pressures when the evaporation coefficient is correctly taken into account. This provides further evidence that amorphous silicon monoxide is an intimate mixture of small domains of silicon and silica and not strictly a true compound.

Ferguson, Frank T.↗
NASA NTRS1986

Compact Plasma Deposition Chamber

Contamination and nonuniformity are reduced. Substrates serve as walls of deposition chamber in configuration for plasma deposition of amorphous silicon. New chamber intended for production of amorphous silicon solar cells. Design reduces requirements on chamber size and expected to increase product quality.

Bickler, D. B.↗
NASA NTRS1985

Module voltage isolation and corrosion research

A summary of recent research at JPL on two topics related to achieving long term reliability of photovoltaic modules: voltage isolation and electrochemical corrosion is presented. Special emphasis is given to similarities and differences in performance between crystalline silicon modules and amorphous silicon modules.

Mon, G. R.↗
DOE OSTI2022

Nafion Passivation of c-Si Surface and Edge for Electron Paramagnetic Resonance

Effective surface passivation of crystalline silicon (c-Si) surface by reducing the carrier recombination rate has led to modern c-Si solar cells with efficiencies > 25% in both laboratory and industrial settings. Typical mainstream surface passivation techniques include high-temperature silicon oxide (SiOx), amorphous silicon (a-Si:H), hydrogen-rich silicon nitride (SiNx), and aluminum oxide (Al2O3) [1]. They have demonstrated excellent surface recombination velocity of < 1 cm/s owing to both chemical passivation (via the hydrogen saturation of Si dangling bonds at the c-Si surface), and field-effect passivation (via the band bending from the fixed charge of the dielectric layers). Recently, several groups have studied solution-based organic materials for c-Si passivation, including bis(trifluoromethane)sulfonimide (TFSI), polystyrenesulfonate, and Nafion [2, 3] via spin or dip coating. All films were processed at ambient room temperature, and a high lifetime of 12 ms, as well as a low saturation current density (J0) of 16 fA/cm2, have been demonstrated using Nafion passivation [2]. However, despite the air instability, Nafion has several advantages when introduced to PV applications: (a) Wafer quality can be measured at high throughput after several process stages. (b) It is compatible with PL mapping, compared to HF liquid passivation which cannot be performed in room ambient. (c) Nafion process is fast and poses fewer constraints on process complexity, and cleanness, compared to Al2O3 and a-Si:H passivation. (d) Nafion is the ideal room temperature passivation, which can be applied onto a small fragment of a degraded module to investigate microscopic mechanisms when studying degradation mechanisms. Edge passivation is needed for advanced characterization tests such as Electron Paramagnetic Resonance (EPR), Electrically Detected Magnetic Resonance (EDMR), Deep Level Transient Spectroscopy (DLTS), local cell current-voltage (J-V), and Suns-Voc. In such cases, the laser-damaged minicell edges will obscure the true degradation mechanisms, and Nafion can effectively passivate them without causing further degradation through elevated-temperature processes. In this contribution, we show the passivation results of Nafion on bare nCz and compare it with a Al2O3 witness. We highlight the importance of edge pre-treatment before Nafion to achieve good passivation. We show that Nafion can reach decent passivation without undergoing high-temperature processes. We also explore the temperature dependency of Nafion through photoluminescence (PL) study and demonstrate the application of Nafion under cryogenic temperature (~6 K) through EPR. Our results reveal that Nafion can reduce surface and edge Si dangling bonds at low temperatures. Thus, it can be used as an effective room temperature passivation technique for advanced characterization methods.

c-Si↗