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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS1971

Recombination luminescence in irradiated silicon - Effects of thermal annealing and lithium impurity.

Use of luminescence in irradiated silicon to determine the thermal stability of the defects responsible for the recombination. It is found that the defect responsible for the zero-phonon line at 0.97 eV has an annealing behavior similar to that of the divacancy and that the zero-phonon line at 0.79 eV anneals in a manner similar to the G-15 or K-center. Annealing at temperatures up to 500 C generates other defects whose luminescence is distinct from that seen previously. Addition of lithium to the material produces defects with new characteristic luminescence. Of particular importance is a defect with a level at E sub g -1.045 eV.

Johnson, E. S.↗
NASA NTRS1976

Exoelectron emission from a clean, annealed magnesium single crystal during oxygen adsorption

Exoelectron emission was observed from a clean, annealed Mg (0001) surface during oxygen and chlorine adsorption at pressures of 6.5x10 0.00001- N/sq m and lower. the studies were performed in an ultrahigh vacuum system. The crystals were cleaned by argon ion bombardment and annealed at 300 C. Auger electron spectroscopy was used to verify surface cleanliness, and low energy electron diffraction was used to verify that the surface was annealed. The emission was found to be oxygen arrival rate dependent. Two peaks were observed in the electron emission with exposure. Evidence is presented that the formation of the second peak corresponds to oxidation of the Mg surface. No emission was observed from clean aluminum during adsorption. Results verify that electron emission occurs from a strain free surface simply upon adsorption of oxygen. A qualitative explanation for the mechanisms of emission in terms of chemical effects is presented.

Ferrante, J.↗
NASA NTRS1976

Exoelectron emission from a clean, annealed magnesium single crystal during oxygen adsorption

Exoelectron emission has been observed from a clean, annealed Mg (0001) surface during oxygen and chlorine adsorption at pressures of 0.000065 N/sq m and lower. The studies were performed in an ultrahigh vacuum system. The crystals were cleaned by argon-ion bombardment and annealed at 300 C. Auger electron spectroscopy was used to verify surface cleanliness, and low-energy electron diffraction was used to verify that the surface was annealed. The emission was found to be dependent on oxygen arrival rate. Two peaks were observed in the electron emission with exposure. Evidence is presented that the formation of the second peak corresponds to oxidation of the Mg surface. The results verify that electron emission occurs from a strain-free surface simply upon adsorption of oxygen. A qualitative explanation for the mechanisms of emission in terms of chemical effects is presented.

Ferrante, J.↗
NASA NTRS1976

Irradiate-anneal screening of total dose effects in semiconductor devices

Judicious choice of radiation dose and parameter change acceptance criteria, absence of anomalous anneal phenomena, and absence of anomalous reirradiation effects are recognized as essential for a successful irradiation-anneal (IRAN) screening procedure to ensure that no device will fall, upon reirradiation, above parametric limits assigned for the worst case application. Reirradiation and irradiation-anneal behavior of various semiconductor devices are compared and those that do not lend themselves to IRAN screening are singled out. Information needed to judge the suitability of an IRAN type screening program is detailed. Reasons for success of the limited IRAN screening of flight parts for the Mariner Jupiter/Saturn (MJS '77) spacecraft are indicated.

Stanley, A. G.↗
NASA NTRS1978

Deformation and annealing study of NiCrAlY

The elevated temperature properties (tensile and creep) of NiCrALY, a nickel base alloy containing nominally 16% chromium, 4% aluminum, and 2 to 3% yttria (Y2O3) were evaluated and the optimal combination of thermomechanical treatments for maximum creep resistance was determined. Stored strain energy in as-extruded bars (14:1 extrusion ratio) permitted the development of a large grain size in the material when it was annealed at the maximum safe temperature 2450 F (1343 C). With a one-hour anneal at this temperature, the relatively fine grain size of the as-extruded material was changed to one in which the average grain diameter approached 1 mm, and the aspect ratio was about 10. The material was capable of being cold worked (by rolling) in amounts greater than 30% reduction in area. When the cold worked material was given a relaxation treatment, consisting of heating one hour at 1600 F(871 C), and then a high temperature anneal at 2450 F (1343 C) for one hour, both the high temperature strength and the high temperature creep resistance of the material was further enhanced.

Ebert, L. J.↗
NASA NTRS1980

Effects of thermal annealing on the deep-level defects and I-V characteristics of 200 keV proton irradiated AlGaAs-GaAs solar cells

Detailed characterization of deep-level defects and analysis of dark I-V data in 200 keV proton irradiated AlGaAs-GaAs solar cells have been carried out for several proton fluences (5 x 10 to the 11th, 10 to the 12th, and 10 to the 13th P/sq cm), using DLTS, C-V, and I-V measurement techniques. To study the effect of low temperature thermal annealing on the deep-level defect properties, these irradiated samples were annealed in vacuum at 300 C for one hour. Comparison was then made on the measured defect parameters (i.e., defect energy levels and densities) and the dark I-V characteristics for both the annealed and unannealed samples.

Li, S. S.↗
NASA NTRS1980

Low-cost ion implantation and annealing technology for solar cells

Ion implantation and thermal annealing techniques for processing junctions and back surface layers in solar cells are discussed. Standard 10 keV (31)p(+) junction implants and 25 keV (11)B(+) back surface implants in combination with three-step furnace annealing are used for processing a range of silicon materials and device structures. Cells with efficiencies up to 16.5% AM1 are being produced, and large-area terrestrial cells with implanted junctions and back fields being fabricated in pilot production exhibit average efficiencies in excess of 15% AM1. Thermal annealing methods for removal of the radiation damage caused by implantation should be replaced by transient processing techniques in future production. Design studies have been completed for solar cell processing implanters to support 10 MW/yr and 100 MW/yr production lines, and analyses indicate that implantation costs can be reduced to approximately 1 cent/watt.

Kirkpatrick, A. H.↗
NASA NTRS1981

Processing of silicon solar cells by ion implantation and laser annealing

Methods to improve the radiation tolerance of silicon cells for spacecraft use are described. The major emphasis of the program was to reduce the process-induced carbon and oxygen impurities in the junction and base regions of the solar cell, and to measure the effect of reduced impurity levels on the radiation tolerance of cells. Substrates of 0.1, 1.0 and 10.0 ohm-cm float-zone material were used as starting material in the process sequence. High-dose, low-energy ion implantation was used to form the junction in n+p structures. Implant annealing was performed by conventional furnace techniques and by pulsed laser and pulsed electron beam annealing. Cells were tested for radiation tolerance at Spire and NASA-LeRC. After irradiation by 1 MeV electrons to a fluence of 10 to the 16th power per sq cm, the cells tested at Spire showed no significant process induced variations in radiation tolerance. However, for cells tested at Lewis to a fluence of 10 to the 15th power per sq cm, ion-implanted cells annealed in vacuum by pulsed electron beam consistently showed the best radiation tolerance for all cell resistivities.

Minnucci, J. A.↗
NASA NTRS1981

Activation energies of thermal annealing of radiation-induced damage in n- and p-channels of CMOS integrated circuits. II

The procedures described by Danchenko et al. (1980) are applied to devices of RCA's Z-process (100,000 rad-hard). A thermal annealing investigation of the Z-process reveals an annealing behavior of the p-channels that is anomalous when compared with the p-channels of the commercial and J-processes. It is noted that the thermal annealing-induced shift of the threshold potential extends far below the original value; this necessitated the development of a new mathematical treatment, the treatment presented in the paper.

Danchenko, V.↗
NASA NTRS1982

Thermal annealing of radiation damage in CMOS ICs in the temperature range -140 C to +375 C

Annealing of radiation damage was investigated in the commercial, Z- and J-processes of the RCA CD4007A ICs in the temperature range from -140 C to +375 C. Tempering curves were analyzed for activation energies of thermal annealing, following irradiation at -140 C. It was found that at -140 C, the radiation-induced shifts in the threshold potentials were similar for all three processes. The radiation hardness of the Z- and J-process is primarily due to rapid annealing of radiation damage at room temperature. In the region -140 to 20 C, no dopant-dependent charge trapping is seen, similar to that observed at higher temperatures. In the unbiased Z-process n-channels, after 1 MeV electron irradiation, considerable negative charge remains in the gate oxide.

Danchenko, V.↗
NASA NTRS1984

Excimer laser annealing to fabricate low cost solar cells

The objective is to show whether or not pulsed excimer laser annealing (PELA) of ion-implanted junctions is a cost effective replacement for diffused junctions in fabricating crystalline silicon solar cells. The preliminary economic analysis completed shows that the use of PELA to fabricate both the front junction and back surface field (BSF) would cost approximately 35 cents per peak watt (Wp), compared to a cost of 15 cents/Wp for diffusion, aluminum BSF and an extra cleaning step in the baseline process. The cost advantage of the PELA process depends on improving the average cell efficiency from 14% to 16%, which would lower the overall cost of the module by about 15 cents/Wp. An optimized PELA process compatible with commercial production is to be developed, and increased cell efficiency with sufficient product for adequate statistical analysis demonstrated. An excimer laser annealing station was set-up and made operational. The first experiment used 248 nm radiation to anneal phosphorus implants in polished and texture-etched silicon.

Source record↗
NASA NTRS1984

Thermoluminescence and the shock and reheating history of meteorites. II - Annealing studies of the Kernouve meteorite

Samples of the unshocked, equilibrated chondrite, Kernouve (H6), have been annealed for 1-100 hours at 500-1200 C, their thermoluminescence sensitivity measured and Na, K, Mn, Ca, and Sc determined by instrumental neutron activation analysis. The TL sensitivity decreased with temperature until by 1000 C it had fallen by 40 percent. The process responsible has an activation energy of 8 kcal/mole and probably involves diffusion. Samples annealed 1000-1200 C had TL sensitivities 0.01 times the unannealed values, most of the decrease occurring at 1100 C. This process has an activation energy of 100 kcal/mole and is probably related to the melting of the TL phosphor, feldspar, with some decomposition and loss of Cs, Na and K. Meteorites whose petrography indicates heating above 1100 C by natural shock heating events (shock facies d-f), have TL sensitivities similar to samples annealed above 1100 C.

Sears, D. W. G.↗
NASA NTRS1986

Effect of annealing history on free volume in thermoplastics

Two different types of thermoplastic glassy polymers have been investigated for the effects of thermal annealing on their free volumes. It has been observed that free volumes in glassy polymers decrease asymptotically to a steady level after about four thermal anneals lasting for 24 hours at a temperature about 50 C below their glass transition temperatures. These results indicate that composites incorporating properly annealed thermoplastic matrices may not experience any additional internal stresses due to subsequent thermal excursions experienced while in service.

Singh, J. J.↗
NASA NTRS1985

Excimer laser annealing for fabrication of low-cost solar cells

Pulsed excimer laser annealing was successfully performed using a 50 w laser. Both polished and texturized cells were tried, however, there are serious problems with nonuniformity on texturized cells. A number of cells were produced and compared to diffusion furnace annealed cells. There was no clear economic advantage in using an excimer laser and there was a small penalty on average efficiency. The conclusion was that the excimer laser anneal process must be able to produce superior cells to be considered as a viable process option.

Spitzer, M. B.↗
NASA NTRS1986

Chemical and physical studies of type 3 chondrites. VII - Annealing studies of the Dhajala H3.8 chondrite and the thermal history of chondrules and chondrites

Samples of the Dhajala meteorite were annealed at 600-1000 C for 1, 2, 10, 20 and 100 h and their thermoluminescence (TL) properties were measured. After annealing at less than 900 deg, the TL sensitivity decreased by a factor of two; at higher temperatures, it fell by an order of magnitude. Data indicate that the annealing treatment caused the low-temperature feldspar in Dhajala to be converted to feldspar of a high-temperature (disordered) form. Low-temperature feldspar was found in the meteorite's TL-sensitive chondrules which comprised about 20 percent of those separated. It is suggested that these chondrules suffered greater crystallization of their mesostasis than the other chondrules, and equilibrated to lower temperatures. Based on TL data, there appears to be no relationship between post-metamorphic cooling rate and petrologic type for the 3.5-3.9 chondrites.

Keck, B. D.↗
NASA NTRS1987

A parallel simulated annealing algorithm for standard cell placement on a hypercube computer

A parallel version of a simulated annealing algorithm is presented which is targeted to run on a hypercube computer. A strategy for mapping the cells in a two dimensional area of a chip onto processors in an n-dimensional hypercube is proposed such that both small and large distance moves can be applied. Two types of moves are allowed: cell exchanges and cell displacements. The computation of the cost function in parallel among all the processors in the hypercube is described along with a distributed data structure that needs to be stored in the hypercube to support parallel cost evaluation. A novel tree broadcasting strategy is used extensively in the algorithm for updating cell locations in the parallel environment. Studies on the performance of the algorithm on example industrial circuits show that it is faster and gives better final placement results than the uniprocessor simulated annealing algorithms. An improved uniprocessor algorithm is proposed which is based on the improved results obtained from parallelization of the simulated annealing algorithm.

Jones, Mark Howard↗
NASA NTRS1987

Arsenic ambient conditions preventing surface degradation of GaAs during capless annealing at high temperatures

Changes in surface morphology and composition caused by capless annealing of GaAs were studied as a function of annealing temperature, T(GaAs), and the ambient arsenic pressure controlled by the temperature, T(As), of an arsenic source in the annealing ampul. It was established that any degradation of the GaAs surface morphology could be completely prevented, providing that T(As) was more than about 0.315T(GaAs) + 227 C. This empirical relationship is valid up to the melting point temperature of GaAs (1238 C), and it may be useful in some device-processing steps.

Kang, C. H.↗
NASA NTRS1987

Rapid thermal annealing of indium phosphide compound semiconductors

The rapid thermal annealing (RTA) of indium phosphide (InP) substrates using a proximity contact method and silicon nitride encapsulation is investigated. The surface conditions of the InP substrates following cleaning with procedures A and B are analyzed. Procedure A involves using an iodic acid solution to remove work-damage InP surface layers and B is a degasssing process and hydrofluoric acid solution for native oxide removal. AES, XPS, and SIMS data of the proximity contact and silicon nitride encapsulated annealed samples are examined. The data reveal that RTA using proximity contact with silicon wafers does not provide adequate protection; however, the InP sample is successfully annealed when protected by a silicon nitride encapsulant.

Biedenbender, Michael D.↗