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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Impact assessment of geomagnetic induced current neutral blocking devices with power electronics sources on distance relay for 230 kV transmission lines

Electrical grids increased the integration of power electronics sources onto transmission lines. In addition, recent reports show a significant rise in geomagnetic storms occurring in 2024. These geomagnetic storms can affect transmission lines by inducing electrical currents within them, potentially causing power outages due to overloaded power transformers. Geomagnetic induced current neutral blocking devices (GIC-NBDs) are capacitors on the ground of wye power transformers, to avoid damage caused by geomagnetic storms. The integration of distance relays and transmission lines with power electronics sources and GIC-NBDs needs to be studied to observe if GIC-NBDs and power electronics sources could adversely affect operation of the electrical grid. In this analysis, the effect of 2 MW power electronics sources and GIC-NBDs on distance relays is assessed for different 230 kV transmission line lengths in radial and nonradial power systems. The simulations measured the apparent impedances, with different electrical faults. Results for a typical 2,650 μF GIC-NBD application were presented on impedance plots, and the distance relay model operations were assessed. In conclusion, the tests for radial and nonradial power systems showed the behavior of the distance elements and source impedance ratios, assessing the effect of power electronics sources and GIC-NBDs on 230 kV transmission lines.

Distance relays↗
DOE OSTI2024

A high-volume resonator for L-band DNP-NMR

DNP-NMR and EPR experiments that operate at or greater than L-band (i.e., ν 0 (e – ) = 1–2 GHz) are typically limited to maximum sample volumes of several hundred µL. These experiments rely on well-known resonator designs for DNP/EPR irradiation such as the loop-gap resonator and Alderman-Grant coil, where their maximum volumes limit further application to imaging experiments and high-throughput screening beyond L-band. Herein, we demonstrate a birdcage (BC) resonator design that can accommodate several mL of sample while operating around 1.5 GHz. The sample volume is maximized by using two identical BC resonators in a stacked configuration. Simulations are used to optimize the BC design and the performance is validated experimentally with liquid-state Overhauser-DNP-NMR experiments. This BC design exploits just the parasitic capacitance of conductive rings and features no fixed tuning capacitors. An enhancement of –77 is achieved on a 10 mM 4-Amino-TEMPO in H 2 O sample for a 5 mL sample volume. Finally, the associated sample heating is minimal due to the low-E-fields generated and the large sample mass with +3.4 K when driving 100 W for several seconds.

47 OTHER INSTRUMENTATION↗
DOE OSTI2026

Near-field passive sensor for the monitoring of high-temperature oxidative corrosion of metals

This study reports on the development and testing of a passive wireless device designed to track temperature and corrosion behavior in SS304H stainless steel under elevated temperatures. The ANSYS HFSS software was utilized to model and optimize the design of an inductor-capacitor (LC) resonator passive wireless sensors fabricated using platinum designs printed onto an aluminum oxide support operating at frequencies between (50–190 MHz). The optimal LC wireless sensor designs were then fabricated using screen-printing and sintering methods. Here, the sensors were tested by placing the sensor onto polished SS304H flat substrates and heated to 900–1050 °C in air. Wireless acquisition of sensor data during heating, cooling, and isothermal stages was achieved through a Pt loop antenna connected to an RF signal generator and a network analyzer.

20 FOSSIL-FUELED POWER PLANTS↗
DOE OSTI2025

Design of an 8-channel 40 GS/s 20 mW/Ch waveform sampling ASIC in 65 nm CMOS

One picosecond timing resolution is the entry point to signature based searches relying on secondary/tertiary vertices and particle identification. We describe PSEC5, an 8-channel 40 GS/s waveform-sampling ASIC in TSMC 65 nm process targetting one picosecond resolution at 20 mW power per channel. Each channel consists of four fast and one slow switched capacitor arrays (SCA), allowing for picosecond time resolution combined with a long effective buffer. Each fast SCA is 1.6 ns long and has a nominal sampling rate of 40 GS/s. The slow SCA is 204.8 ns long and samples at 5 GS/s. Recording of the analog data for each channel is triggered by a fast discriminator capable of multiple triggering during the window of the slow SCA. To achieve a large dynamic range, low leakage, and high bandwidth, the SCA sampling switches are implemented as 2.5 V nMOSFETs controlled by 1.2 V shift registers. Stored analog data are digitized by an external ADC at 10 bits or better. Specifications on operational parameters include a 4 GHz analog bandwidth and a dead time of 20 microseconds, corresponding to a 50 kHz readout rate, determined by the choice of the external ADC. PSEC5 has been submitted for fabrication.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

Fast spark-detection system for GEM detectors

The sPHENIX experiment is currently under commissioning at the Relativistic Heavy Ion Collider (RHIC) at Brookhaven National Lab (BNL). The Time Projection Chamber (TPC) serves as a tracking detector for the experiment. The sPHENIX TPC uses a stack of four Gas Electron Multipliers (GEMs) as a gain stage in a reduced ion back-flow configuration. To mitigate the damaging effects of sparks in the GEMs, an online spark monitoring system was created. Once the system detects a spark in a GEM stack, the voltages across the GEMs in that stack can be lowered to prevent further sparking without affecting the gain and efficiency of the other modules. Spark signals are coupled out of the GEM stack by a pick-off capacitor attached to the bottom of the bottom GEM. Custom PCBs convert the oscillatory spark signal into a mono-polar pulse that is then digitized. The software then saves the waveform in a server and uses experimentally derived thresholds to determine how to react. As a result, the system has so far proven to be effective at improving the stability of the TPC and preventing damaging events while collecting cosmic ray data.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Modeling of surface-state induced inter-electrode isolation of n -on- p devices in mixed-field and γ -irradiation environments

Position sensitive n-on-p silicon sensors will be utilized in the tracker and in the High Granularity Calorimeter (HGCAL) of the Compact Muon Solenoid (CMS) experiment at High Luminosity Large Hadron Collider (HL-LHC). The detrimental effect of the radiation-induced accumulation of positive net oxide charge on position resolution in n-on-p sensors has typically been countered by the application of isolation implants like p-stop or p-spray between n + -electrodes. In addition to the positively charged layer inside the oxide and close to the Si/SiO 2 -interface, surface damage introduced by ionizing radiation in SiO 2 -passivated silicon particle detectors includes the accumulation of trapped-oxide-charge and interface traps. A previous study of either n/γ (mixed field)- or γ-irradiated Metal-Oxide-Semiconductor (MOS) capacitors showed evidence of substantially higher introduction rates of acceptor- and donor-type deep interface traps (N it,acc/don ) in mixed-field environment. Here, in this work, an inter-pad and -strip resistance (or resistivity (ρ int )) simulation study of n-on-p sensors with and without p-stop isolation implants was conducted for both irradiation types. Higher levels of ρint showed correlation to higher densities of deep N it,acc/don , with the inter-pad isolation performance of the mixed-field irradiated sensors becoming independent of the presence of p-stop implant between the n + - electrodes up to about 100 kGy. The low introduction rates of deep N it,acc/don in γ-irradiated sensors resulted in high sensitivity of ρ int to the presence and peak doping of p-stop above the lowest dose of about 7 kGy in the study. As a consequence of the advantageous influence of radiation-induced accumulation of deep N it on the inter-electrode isolation, position sensitive n-on-p sensors without isolation implants may be considered for future HEP-experiments where the radiation is largely due to hadrons.

Akchurin, N. [Texas Tech Univ., Lubbock, TX (Unite↗
DOE OSTI2026

Electron emissions and hot spots in dual-phase LXe TPCs

Persistent photon and single-electron emissions - in the form of “electron trains” and localized “hot spots” - have been observed in multiple dual-phase liquid xenon (LXe) time projection chambers (TPCs), often persisting long after ionizing events. Here, we show that these phenomena are naturally explained by photon-triggered single-electron emission from resistive mixed-oxide films on stainless-steel (SS304 or s.s.) wires, which behave as leaky capacitors with long RC time constants at LXe temperature. Positive ions landing on these oxides can further enhance local fields and drive Malter-like electron emission. We outline the materials physics (Cr 2 O 3 /Cr 2 O 3-x /Cr(OH) 3 mosaics), quantify expected time scales (∼1 s under illumination), and demonstrate how small damaged regions with enhanced QE can produce persistent hot spots.

Va'vra, J. [SLAC National Accelerator Laboratory (↗
DOE OSTI2025

Effects of Particle Mixing and Gravitational Settling on Charge Transport in Carbon Flow-Electrode Cells

Flowable carbon slurries are actively studied and under development for charge transport in various electrochemical systems including flow capacitors, capacitive deionization cells, semi-solid flow batteries, and lithium extraction. However, much less is known about in operando slurry flow dynamics and their corresponding effect on charge transport. We performed an experimental study of mixing and settling dynamics of slurry electrodes within an electrochemical flow cell during continuous operations. The electrochemical cell consisted of two horizontal co-flowing channels, separated by a cation-exchange membrane (CEM). Here we used high-speed optical imaging of planes parallel to gravity and simultaneous electrochemical measurements. At low flow rates, dense yet dynamic particle beds formed on the bottom electrode in each channel, which unexpectedly yielded the highest currents. This approach enables the operation of the flow cell at low system-average particle concentrations while leveraging gravity-driven particle settling to locally enhance carbon concentrations precisely at the current collector sites. Conversely, high flow rates were characterized by thin particle beds and well-mixed particle flows. In the latter case, the electrodes in closest proximity (located on either side of the CEM) achieved a current higher than the other electrode pairs. The observations have implications for slurry control and electrode designs in electrochemical systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Ferroelectric Switching in Hybrid Molecular-Beam-Epitaxy-Grown BaTiO 3 Films

Molecular beam epitaxy (MBE) is a promising synthesis technique for both heterostructure growth and epitaxial integration of ferroelectric BaTiO 3 . However, direct measurement of the remnant polarization (P r ) has not been previously reported in MBE-grown BaTiO 3 films. We report the in situ growth of an all-epitaxial SrRuO 3 /BaTiO 3 /SrRuO 3 heterostructure on Nb-doped SrTiO 3 (001) substrates by hybrid MBE using metal–organic precursors. This capacitor structure consisting of 16 nm SrRuO 3 /40 nm BaTiO 3 /16 nm SrRuO 3 shows hysteretic polarization–electric field (P–E) curves with P r ∼ 15 μC cm –2 at frequencies ranging from 500 Hz to 20 kHz, after isolating the intrinsic ferroelectric response from non-ferroelectric contributions using the Positive-Up-Negative-Down (PUND) method. We hypothesize that the asymmetry in switching behavior and current leakage has origins in structural defects. Furthermore, this work opens the door to defect-engineered ferroelectric BaTiO 3 -based heterostructures grown by hybrid MBE for future electronic, photonic and spintronic applications.

SrRuO3 electrode↗
DOE OSTI2024

Direct Imaging of Asymmetric Interfaces and Electrostatic Potentials inside a Hafnia–Zirconia Ferroelectric Nanocapacitor

In hafnia-based thin-film ferroelectric devices, chemical phenomena during growth and processing, such as oxygen vacancy formation and interfacial reactions, appear to strongly affect device performance. However, the correlation between the structure, chemistry, and electrical potentials at the nanoscale in these devices is not fully known, making it difficult to understand their influence on device properties. Here, we directly image the composition and electrostatic potential with nanometer resolution in the cross section of a nanocrystalline W/Hf 0.5 Zr 0.5 O 2−δ (HZO)/W ferroelectric capacitor using multimodal electron microscopy. This reveals a 1.4 nm wide tungsten suboxide interfacial layer formed at the bottom interface during fabrication, which introduces a potential dip and leads to asymmetric switching fields. Additionally, we compare the measured potentials to DFT calculations and find it is nearly 3 V lower than expected in the HZO, which appears to be caused by oxygen vacancies and a resulting negative built-in potential. In conclusion, these chemical and electrostatic details are important to characterize and tune to achieve high-performance ferroelectric devices.

Defects in solids↗
DOE OSTI2026

Atomic-Scale Characterization and Electronic Properties of Gold-Capped Niobium Films for Superconducting Qubits

Niobium thin films are central to superconducting qubits, but their complex native oxides contribute significantly to microwave losses. A promising mitigation strategy is to suppress oxide formation using engineered thin-film encapsulation layers. Recent experiments have shown that ∼10 nm metallic overlayers on Nb capacitor films can improve the energy relaxation time T1 of transmon qubits. Here, we present a comparative study of Au-capped Nb films fabricated in situ by molecular beam epitaxy and ex situ by sequential deposition benchmarked against bare Nb films. Using complementary structural, chemical, and spectroscopic techniques, we correlate the interface quality with superconducting electronic properties of the Au surface. Low-temperature scanning tunneling spectroscopy (STS) provides spatially resolved quasiparticle density-of-states maps. While both Au-capped Nb samples exhibit large areas with uniform, fully gapped density of states, clear differences emerge between the two interfaces. Compared to in situ Nb-Au, ex situ Nb-Au exhibits a reduced induced superconducting gap, broadened coherence peak, and localized in-gap states, consistent with a residual NbxOy layer at the interface. Supported by complementary structural and chemical analyses, these findings demonstrate that STS directly links nanoscale superconducting properties to interface preparation, highlighting the importance of controlled in situ encapsulation for minimizing dissipation and improving quantum coherence.

Makita, Junki [MIT; Temple U.] (ORCID:000000026889↗
DOE OSTI2025

Chemical Compensation Challenges in Processing Antiferroelectric PbZrO 3 Thin Films

The electric field-induced antipolar-to-polar phase transition in antiferroelectric materials is accompanied by large changes in the structural and functional response, making them attractive for many applications ranging from pulsed energy capacitors to high-strain-high (blocking-)force actuators, solid-state heating and cooling systems, and optoelectronic devices. PbZrO 3 , as an end member of the PZT, (x)PbZr 1–x Ti x O 3 , solid solution, has been the subject of many studies. However, processing of perovskite PbZrO 3 is extremely challenging due to phase instabilities induced by Pb loss at the temperatures necessary for perovskite crystallization. Here, we discuss the challenges associated with Pb loss, as well as its compensation through bulk Pb overstoichiometry and interfacial PbO additions, in chemical solution processed, highly oriented PbZrO 3 thin films. For both 042 o - and 001 o -oriented (o-orthorhombic distortion) PbZrO 3 thin films, the crystallization interfaces are the most important contributors to Pb loss and off-stoichiometric outcomes, and no single approach was sufficient to address these challenges. Pb-rich and Pb-deficient nonperovskite phases including ZrO x were only observable through microscopic characterization, and X-ray diffraction alone could not rule out the presence of such secondary phases. “Ideal” macroscopic antiferroelectric polarization-electric field double hysteresis curves were observed despite (at times) the large presence of secondary phases. However, reduced saturation polarization and increased phase transition electric fields were observed concomitantly with the presence of secondary phase(s) and tentatively assigned to the voltage drop across the ZrO x nanocrystals. Based on these results, it is imperative that the presence of secondary phases always be addressed (beyond X-ray diffraction spectra) in order to correctly evaluate the properties of antiferroelectric films.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Thermodynamic Control of Interface Directs MnO 2 Nucleation Chemistry for Dense and Conformal Electrodeposition

Manganese dioxide (MnO 2 ) is widely recognized as a promising material for high-energy-density energy storage systems due to its broad applicability and facile electrodeposition. However, achieving uniform, thin, and high-mass-loading MnO 2 coatings on high-surface-area electrodes remains a significant challenge. Conventional electrodeposition methods typically yield nonuniform, thick layers with poor conductivity and limited material utilization, restricting their practical use. Here, we uncover a thermodynamically engineered vanadyl/pervanadyl (VO 2+ /VO 2 + ) interface that fundamentally reshapes MnO 2 electrodeposition chemistry, enabling highly uniform and dense coatings. Here, combining in situ AFM measurement, Classical Nucleation Theory, and Johnson–Mehl–Avrami–Kolmogorov modeling, we show that this interface reduces early-stage detectable MnO 2 island size by 35-fold and shifts the MnO 2 growth from diffusion-limited to reaction-limited progressive nucleation. This thermodynamically controlled interface yields highly dense and conformal MnO 2 films with record-high mass loading of 241 mg cm –2 (1607 mg cm –3 ) on 3D-printed graphene aerogels, without compromising porosity or inducing thickness gradient. As a prototype demonstration, the resulting MnO 2 electrodes deliver record-setting volumetric performance in both capacitors (106 F cm –3 ) and Zn//MnO 2 pouch cells (162 mAh cm –3 ). Beyond energy storage, our findings demonstrate the significance of thermodynamic interface control in MnO 2 nucleation chemistry for achieving dense and uniform coatings on various substrates, with implications for electrocatalysis, semiconductor processing, and advanced materials manufacturing.

Batteries↗
DOE OSTI2024

Hydrogen-induced tunable remanent polarization in a perovskite nickelate

Materials with field-tunable polarization are of broad interest to condensed matter sciences and solid-state device technologies. Here, using hydrogen (H) donor doping, we modify the room temperature metallic phase of a perovskite nickelate NdNiO 3 into an insulating phase with both metastable dipolar polarization and space-charge polarization. We then demonstrate transient negative differential capacitance in thin film capacitors. The space-charge polarization caused by long-range movement and trapping of protons dominates when the electric field exceeds the threshold value. First-principles calculations suggest the polarization originates from the polar structure created by H doping. We find that polarization decays within ~1 second which is an interesting temporal regime for neuromorphic computing hardware design, and we implement the transient characteristics in a neural network to demonstrate unsupervised learning. These discoveries open new avenues for designing ferroelectric materials and electrets using light-ion doping.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Reversible long-range domain wall motion in an improper ferroelectric

Reversible ferroelectric domain wall movements beyond the 10 nm range associated with Rayleigh behavior are usually restricted to specific defect-engineered systems. Here, we demonstrate that such long-range movements naturally occur in the improper ferroelectric ErMnO 3 during electric-field-cycling. We study the electric-field-driven motion of domain walls, showing that they readily return to their initial position after having traveled distances exceeding 250 nm. By applying switching spectroscopy band-excitation piezoresponse force microscopy, we track the domain wall movement with nanometric spatial precision and analyze the local switching behavior. Phase field simulations show that the reversible long-range motion is intrinsic to the hexagonal manganites, linking it to their improper ferroelectricity and topologically protected structural vortex lines, which serve as anchor point for the ferroelectric domain walls. Our results give new insight into the local dynamics of domain walls in improper ferroelectrics and demonstrate the possibility to reversibly displace domain walls over much larger distances than commonly expected for ferroelectric systems in their pristine state, ensuring predictable device behavior for applications such as tunable capacitors or sensors.

Zahn, Manuel [Norwegian Univ. of Science and Techn↗
DOE OSTI2025

Reversible control over the distribution of chemical inhomogeneities in multiferroic BiFeO3

Abstract Despite the appeal of flawless order, semiconductor technology has demonstrated that implanting inhomogeneities into single-crystalline materials is pivotal for modern electronics. However, the influence of the local arrangement of chemical inhomogeneities on the material’s functionalities is underexplored. In this work, we control the distribution of chemical inhomogeneities in La 3+ -substituted ferroelectric BiFeO 3 thin films. By means of a stress- and composition-driven phase transition, we trigger the formation of a lattice of La 3+ -rich and La 3+ -poor layers. This ordering correlates with the emergence of an antipolar phase. An electric field restores the original ferroelectric phase and re-randomizes the distribution of the La 3+ inhomogeneities. Leveraging these insights, we tune the polar/antipolar phase coexistence to set the net polarization of La 0.15 Bi 0.85 FeO 3 to any desired value between its saturation limits. Finally, we control the net polarization response in device-compliant capacitor heterostructures to show that inhomogeneity-distribution control is a valuable tool in the design of functional oxide electronics.

Science & Technology - Other Topics↗
DOE OSTI2025

Spacetime pq theory for AC and DC electric power systems

The 50/60 Hz alternating current (AC) electric power has been the standard and most flexible energy source powering our modern societies for one and a half centuries since the war of the currents: AC versus direct current (DC). A reactive power concept that was introduced at the beginning of the AC power was very useful for circuit/system analysis, design, control, optimization, and ultimately for more efficient and stable generation, transmission, distribution, and consumption. The initial reactive power theory was based on single-phase sinusoidal AC power to capture inductive and capacitive power that yields to net-zero average power over one fundamental cycle. Soon it was expanded to non-sinusoidal AC power and finally to instantaneous three-phase AC power. However, these reactive power theories remain separate and limited to special cases and have never been consolidated and made valid to all cases. Today, more widespread adoption of power electronics and renewable energy is bringing back DC power into the electric grids. The reactive power concept has never been applied to DC power systems. There is no reactive power in DC power systems according to the existing reactive power theories. Do DC power systems really have no reactive power? Capacitors and inductors are widely used in DC just like in AC power systems. Are they not reactive power components? Why are they different from their AC counterparts? Furthermore, are batteries active or reactive power components? What about active devices like power converters (or inverters) with AC (or DC) on one side and DC (or AC) on the other? Do they generate or consume reactive power? Finally, what about AC and DC hybrid power systems? How to define reactive power in such a complex power system that has a multitude of loads, buses, and sources? Is there reactive power between any two loads, any two buses, or any two sources in a power system and what is the total reactive power in such a complex power system as a whole? As the motivation and goal of this paper to answer the above basic questions, to unify the existing AC reactive power theories and to ultimately provide theoretical and insightful guidance for system analysis, design, control, efficiency, optimization, and operation of complex power systems, a concept of spacetime (both spatial and temporal) active and reactive power (pq) theory—the spatiotemporal aspect of active and reactive power—is developed for both AC and DC power systems. The theoretical definitions and physical meanings of the spacetime reactive power will be developed, and real applications and thought experiments/cases/exercises will be explored and discussed. The developed mathematics to define the active (or real) and reactive (or imaginary) power— p and q respectively by dot (scalar) and cross (vector) products of multi-dimension spacetime vectors and time-space mapping principle/law can have some fundamental implications as well.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2025

Cyberattack Detection and Mitigation on Central Volt‐VAr Using Circuit Law and Machine Learning

ABSTRACT In a distribution grid, voltage is maintained within a nominal range through a Volt‐VAr function that controls capacitor banks, reactive power of distributed energy resources (DER), and on‐load tap changers (OLTC). Availability of communications helps with the implementation of central Volt‐VAr control; however, it also opens the system to cyberattacks, causing voltage disturbances. Previous work has shown the adverse impacts of false data injection (FDI) on the central Volt‐VAr control; however, very few works have studied methods to detect and mitigate FDI on Volt‐VAr control. This paper addresses gaps in the detection and mitigation of FDI on the measurement packets of a central Volt‐VAr control. This work uses a two‐stage algorithm for cyberattack detection since the accuracy of a single‐stage machine learning (ML)–based detection method decreases while dealing with unseen data. The first stage is based on the verification of measurements against circuit laws, and the second stage utilizes a tree search algorithm and an ML method to detect the falsified data. This paper compares long short‐term memory (LSTM) and bidirectional LSTM (BiLSTM) as the employed ML algorithms. Finally, the mitigation algorithm replaces the falsified data with the estimated output of the ML algorithm. The effectiveness of the proposed method is tested for several cases using the IEEE 13‐bus test system in PSCAD software.

Beikbabaei, Milad [Bradley Department of Electrica↗