Ultrastrong Coupling Leads to Slowed Cooling of Hot Excitons in Few-Layer Transition-Metal Dichalcogenides
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37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
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Disentangling the evolution of electrons and holes in photoexcited ZnO nanoparticles
The evolution of charge carriers in photoexcited room temperature ZnO nanoparticles in solution is investigated using ultrafast ultraviolet photoluminescence spectroscopy, ultrafast Zn K-edge absorption spectroscopy, and ab initio molecular dynamics (MD) simulations. The photoluminescence is excited at 4.66 eV, well above the band edge, and shows that electron cooling in the conduction band and exciton formation occur in <500 fs, in excellent agreement with theoretical predictions. The x-ray absorption measurements, obtained upon excitation close to the band edge at 3.49 eV, are sensitive to the migration and trapping of holes. They reveal that the 2 ps transient largely reproduces the previously reported transient obtained at 100 ps time delay in synchrotron studies. In addition, the x-ray absorption signal is found to rise in ∼1.4 ps, which we attribute to the diffusion of holes through the lattice prior to their trapping at singly charged oxygen vacancies. Indeed, the MD simulations show that impulsive trapping of holes induces an ultrafast expansion of the cage of Zn atoms in <200 fs, followed by an oscillatory response at a frequency of ∼100 cm−1, which corresponds to a phonon mode of the system involving the Zn sub-lattice.
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
Timescales of excited state relaxation in α–RuCl 3 observed by time-resolved two-photon photoemission spectroscopy
The nonequilibrium properties of strongly correlated materials present a target in the search for new phases of matter. It is important to observe the types of excitations that exist in these materials and their associated relaxation dynamics. We have studied the photoexcitations in a spin-orbit assisted Mott insulator α–RuCl 3 using time-resolved two-photon photoemission spectroscopy and transient reflection spectroscopy. We find that photoexcited carriers (doublons) in the upper Hubbard band rapidly relax to Mott-Hubbard excitons on a timescale of less than 200 fs. Subsequently, further relaxation of these lower-energy quasiparticles occurs with an energy-dependent time constant of that ranges from 370 to 600 fs due to exciton cooling. The population of Mott-Hubbard excitons persists for timescales up to several microseconds.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Evaluation of mitigation strategies for radioactive fission gases in fluoride-salt-cooled high-temperature reactors
Here, the Fluoride-salt-cooled High-temperature Reactor (FHR) is a promising Generation IV nuclear reactor due to its improved safety design, near atmospheric working pressure, and high electric power conversion efficiency. However, control of radioactive fission gases, such as tritium, is a critical issue in FHRs due to the significantly larger production rate and potentially larger leakage rate of tritium compared to those in Light Water Reactors (LWRs). Therefore, this study proposes two mitigation strategies for tritium in FHRs: Double-Wall Heat eXchanger with a Tritium Carrier (DWHX-TC) option and Single-Wall Heat eXchanger with a Tritium Barrier (SWHX-TB) option. For the DWHX-TC option, two tube surface configurations, i.e., plain and fluted tubes, and four tritium carriers, i.e., helium, FLiBe, FLiNaK, and KF-ZrF 4 , are initially considered, among which the best tube configuration and promising tritium carrier are then selected and used for design optimization of the DWHX. For the SWHX-TB option, two cases, tritium barriers with and without cracks, are investigated in this study. In addition, the two mitigation strategies are evaluated by an in-house, one-dimensional, coupled HEat and MAss Transfer (HEMAT) code developed to predict the leakage rate of tritium in nuclear systems. Our analysis shows that (1) a double-wall configuration using fluted tubes as both the inner and outer tubes is better than other double-wall configurations investigated; (2) helium, as a tritium carrier, is superior to other candidates, including FLiBe, FLiNaK, and KF-ZrF 4 ; (3) the leakage rate of tritium (into the atmosphere) is reduced from 3400 Ci/day, taking the Advanced High-Temperature Reactor (AHTR) as a reference, to 4.0 Ci/day for an optimum design of the DWHX-TC option using helium as the tritium carrier and 1.7 Ci/day for an optimum design of the SWHX-TB option using 30-µm thick silicon carbide (SiC) as the tritium barrier (no cracks); and (4) potential cracks in tritium barriers may significantly deteriorate mass transfer performance of the SWHX-TB option. For example, a cracking rate of 0.1% leads to an increase of 694.1% in the leakage rate under the conditions investigated.
22 GENERAL STUDIES OF NUCLEAR REACTORS↗
An in situ imaging investigation of the effect of gas flow rates on directed energy deposition
Gas flow rates in Directed Energy Deposition (DED) Additive Manufacturing (AM) can significantly affect the quality of built parts by altering melt pool geometry. Using a DED process replicator and in situ synchrotron radiography, together with analogous experiments in an industrial DED machine, we investigate the impact of carrier gas and shield gas flow rates on build quality. The results reveal that there is a critical shield gas flow rate above which melt pools are flattened, tracks widen, and thus layer thickness decreases. The reduction in layer thickness is most prominent in conditions with low carrier gas flow rate, as the highly turbulent shield gas flow may divert slow moving powder particles away from the melt pool, decreasing capture efficiency. Very high flow rates increase internal porosity, as fast-moving particles impacting the melt pool surface can entrain chamber gas behind them. High gas flow rates also cool the melt pool, creating shallower melt pools with increased thermal gradients near the solidification front, increasing pore entrapment in the solidified track.
Additive manufacturing↗
The Subchalcogenides Ir 2 In 8 Q (Q = S, Se, Te): Dirac Semimetal Candidates with Re-entrant Structural Modulation
Subchalcogenides are uncommon compounds where the metal atoms are in unusually low formal oxidation states. They bridge the gap between intermetallics and semiconductors and can have unexpected structures and properties because of the exotic nature of their chemical bonding as they contain both metal–metal and metal–main group (e.g., halide, chalcogenide) interactions. Finding new members of this class of materials presents synthetic challenges as attempts to make them often result in phase separation into binary compounds. We overcome this difficulty by utilizing indium as a metal flux to synthesize large (millimeter scale) single crystals of novel subchalcogenide materials. Herein, we report two new compounds Ir 2 In 8 Q (Q = Se, Te) and compare their structural and electrical properties to the previously reported Ir 2 In 8 S analogue. Ir 2 In 8 Se and Ir 2 In 8 Te crystallize in the $P_{4_2}$/mnm space group and are isostructural to Ir2In8S, but also have commensurately modulated (with q vectors q = 1/6a* + 1/6b* and q = 1/10a* + 1/10b* for Ir 2 In 8 Se and Ir 2 In 8 Te, respectively) low-temperature phase transitions, where the chalcogenide anions in the channels experience a distortion in the form of In–Q bond alternation along the ab plane. Both compounds display re-entrant structural behavior, where the supercells appear on cooling but revert to the original subcell below 100 K, suggesting competing structural and electronic interactions dictate the overall structure. Notably, these materials are topological semimetal candidates with symmetry-protected Dirac crossings near the Fermi level and exhibit high electron mobilities (~1500 cm 2 V –1 s –1 at 1.8 K) and moderate carrier concentrations (~10 20 cm –3 ) from charge transport measurements. This work highlights metal flux as a synthetic route to high quality single crystals of novel intermetallic subchalcogenides with Dirac semimetal behavior.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Process and system for hot and/or cold energy transfer, transport and/or storage
A thermal conveyance system and process for absorbing, transporting, storing, and recovering thermal energy (both hot and cold energy) over a wide range of temperatures from up to 2,100° F., or higher, or cool energy at subzero temperatures in inert and stable particles without the need to maintain a minimum temperature or requiring high system pressures. The process involving the transferring thermal energy to a first transfer fluid and recovering thermal energy from a second transfer fluid wherein the first and the second transfer fluids comprise a two phase thermal media including a gaseous carrier containing a quantity of micron to millimeter sized solid particles.
25 ENERGY STORAGE↗
Three-dimensional superconductivity induced by an extremely small amount of Li in Li x SnSe 2
Unconventional superconductivity occurs often in materials with low dimensionality. Furthermore, we report superconductivity observed in layered Li x SnSe 2 with the superconducting transition temperature T c ~ 6 K. Through Li + intercalation in semiconducting SnSe 2 via electrochemical process, Li x SnSe 2 is formed with an extremely small x value as estimated from the c-axis lattice parameter, carrier concentration, and first-principles calculations.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Silicon nitride stress-optic microresonator modulator for optical control applications
Modulation-based control and locking of lasers, filters and other photonic components is a ubiquitous function across many applications that span the visible to infrared (IR), including atomic, molecular and optical (AMO), quantum sciences, fiber communications, metrology, and microwave photonics. Today, modulators used to realize these control functions consist of high-power bulk-optic components for tuning, sideband modulation, and phase and frequency shifting, while providing low optical insertion loss and operation from DC to 10s of MHz. In order to reduce the size, weight and cost of these applications and improve their scalability and reliability, modulation control functions need to be implemented in a low loss, wafer-scale CMOS-compatible photonic integration platform. The silicon nitride integration platform has been successful at realizing extremely low waveguide losses across the visible to infrared and components including high performance lasers, filters, resonators, stabilization cavities, and optical frequency combs. Yet, progress towards implementing low loss, low power modulators in the silicon nitride platform, while maintaining wafer-scale process compatibility has been limited. Here we report a significant advance in integration of a piezo-electric (PZT, lead zirconate titanate) actuated micro-ring modulation in a fully-planar, wafer-scale silicon nitride platform, that maintains low optical loss (0.03 dB/cm in a 625 µm resonator) at 1550 nm, with an order of magnitude increase in bandwidth (DC - 15 MHz 3-dB and DC - 25 MHz 6-dB) and order of magnitude lower power consumption of 20 nW improvement over prior PZT modulators. The modulator provides a >14 dB extinction ratio (ER) and 7.1 million quality-factor (Q) over the entire 4 GHz tuning range, a tuning efficiency of 162 MHz/V, and delivers the linearity required for control applications with 65.1 dB·Hz 2/3 and 73.8 dB·Hz 2/3 third-order intermodulation distortion (IMD3) spurious free dynamic range (SFDR) at 1 MHz and 10 MHz respectively. We demonstrate two control applications, laser stabilization in a Pound-Drever Hall (PDH) lock loop, reducing laser frequency noise by 40 dB, and as a laser carrier tracking filter. This PZT modulator design can be extended to the visible in the ultra-low loss silicon nitride platform with minor waveguide design changes. This integration of PZT modulation in the ultra-low loss silicon nitride waveguide platform enables modulator control functions in a wide range of visible to IR applications such as atomic and molecular transition locking for cooling, trapping and probing, controllable optical frequency combs, low-power external cavity tunable lasers, quantum computers, sensors and communications, atomic clocks, and tunable ultra-low linewidth lasers and ultra-low phase noise microwave synthesizers.
Wang, Jiawei (ORCID:0000000257965220)↗
A Hybrid Stochastic-Interval Operation Strategy for Multi-Energy Microgrids
Increasing deployment of distributed energy resources intensifies interactions among electric, gas, heating, and cooling systems. Inherent uncertainties ranging from internal parameters to external inputs also impose significant challenges on system operation. A coordinated scheduling method is, therefore, desired for facilitating efficient operation of multi-energy microgrids under multiple uncertainties. In this paper, a deterministic coordinated scheduling model is developed first with detailed modeling of system dynamics and device parameters to fully characterize complex interactions among multi-energy carriers. Then, a hybrid stochastic-interval method is proposed to account for heterogeneous uncertainties in decisions of operational strategies. Specifically, performance and efficiency uncertainties of distributed energy resources, and injection uncertainty of renewable sources and multienergy demands are characterized by interval-based uncertain operation regions and probability distributions, respectively. A scenario-based two-stage algorithm is developed to solve the problem so that multiple uncertainties are preserved in the entire decision-making process. Moreover, adjustable operational strategies are determined to hedge uncertainty by considering operators’ risk preferences. The validity of the proposed method is verified by comprehensive case studies on a test system.
hybrid stochastic-interval approach↗
Understanding the Phase of Responsivity and Noise Sources in Frequency-Domain Multiplexed Readout of Transition Edge Sensor Bolometers
Abstract Cosmic microwave background (CMB) experiments have deployed focal planes with $$\mathcal {O}(10^{4})$$ O ( 10 4 ) transition edge sensor (TES) bolometers cooled to sub-Kelvin temperatures by multiplexing the readout of many TES channels onto a single pair of wires. Digital Frequency-domain Multiplexing (DfMux) is a multiplexing technique used in many CMB polarization experiments, such as the Simons Array, SPT-3 G, and EBEX. The DfMux system studied here uses LC filters with resonant frequencies ranging from 1.5 to 4.5 MHz connected to an array of TESs. Each detector has an amplitude-modulated carrier tone at the resonant frequency of its accompanying LC resonator. The signal is recovered via quadrature demodulation where the in-phase (I) component of the demodulated current is in phase with the complex admittance of the circuit and the quadrature (Q) component is orthogonal to I. Observed excess current noise in the Q component is consistent with fluctuations in the resonant frequency. This noise has been shown to be non-orthogonal to the phase of the detector’s responsivity. We present a detailed analysis of the phase of responsivity of the TES and noise sources in our DfMux readout system. Further, we investigate how modifications to the TES operating resistance and bias frequency can affect the phase of noise relative to the phase of the detector responsivity, using data from Simons Array to evaluate our predictions. We find that both the phase of responsivity and phase of noise are functions of the two tuning parameters, which can be purposefully selected to maximize signal-to-noise (SNR) ratio.
47 OTHER INSTRUMENTATION↗
Screening of hot electrons in the ferroelectric semiconductor In 2 Se 3
We report that in a conventional semiconductor, electrons (e) scatter efficiently with longitudinal-optical phonons (ph LO ) via the Fröhlich interaction, e.g., in polaron formation or hot-electron cooling. Recent studies on lead halide perovskites have suggested that the Fröhlich interaction may be sufficiently screened by the polar lattice. Here we show that hot-electron cooling in a layered ferroelectric semiconductor In 2 Se 3 slows down by 50% as temperature is increased from 115 to 387 K; this decrease is about four times more than that predicted by the Fröhlich model. We suggest that screening of Fröhlich interaction by polar domains or fluctuations in the ferroelectric semiconductor may be responsible for the reduced e-ph LO scattering. Such enhanced screening in polar materials featuring anharmonic lattice instability may also reduce carrier scattering with other charge carriers or with charged defects, leading to improved optoelectronic properties.
36 MATERIALS SCIENCE↗
A short account of thermoelectric film characterization techniques
Thermoelectric films and periodic structures have particularly intriguing electrical and thermal transport features due to their low dimensionality. As a result, they have piqued the attention of researchers from across the spectrum of disciplines. Their applications span from cooling fast CPUs to providing energy for wearable devices. The progress in the techniques for synthesizing TE materials and fabricating thin films has facilitated the emergence of a flourishing research domain in the field of electrical and thermal transport at the nanoscale. Further, a significant proportion of contemporary electronic, opto-electronic, and solar energy components are composed of materials featuring numerous interfaces and nanoscale contacts. Consequently, it is imperative to explore the thermal energy transfer and charge carrier transport across the films with thickness dimensions in the nanometer range. The development of cutting-edge approaches for grasping complicated processes at the nanoscale is critical. This review provides a concise overview of the prevalent methodologies developed over the last two decades and employed for the characterization of the Seebeck coefficient and electrical and thermal conductivity of thermoelectric films.
36 MATERIALS SCIENCE↗
The Bright Side and Dark Side of Hybrid Organic–Inorganic Perovskites
The previously developed bistable amphoteric native defect (BAND) model is used for a comprehensive explanation of the unique photophysical properties and for understanding the remarkable performance of perovskites as photovoltaic materials. It is shown that the amphoteric defects in the donor (acceptor) configuration capture a fraction of photoexcited electrons (holes) dividing them into two groups: higher-energy bright and lower-energy dark electrons (holes). The spatial separation of the dark electrons and dark holes and the k-space separation of the bright and dark charge carriers reduce electron-hole recombination rates, emulating the properties of an ideal photovoltaic material with a balanced, spatially separated transport of electrons and holes. The BAND model also offers a straightforward explanation for the exceptional insensitivity of the photovoltaic performance of polycrystalline perovskite films to structural and optical inhomogeneities. The blue-shifted radiative recombination of bright electrons and holes results in a large anti-Stokes effect that provides a quantitative explanation for the spectral dependence of the laser cooling effect measured in perovskite platelets.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Cooling Mixed A-Site Halide Perovskites: Impact of Temperature on Optical and Structural Properties
The widespread utilization of perovskite-based photovoltaics requires probing both the structural and optical properties under extreme operating conditions to gain a holistic understanding of the material behavior under stressors. Here, in this study, we investigate the temperature-dependent behavior of mixed A-site cation lead triiodide perovskite thin films (85% methylammonium and 15% formamidinium) in the range from 300 to 20 K. Through a combination of optical and structural techniques, we find that the tetragonal-to-orthorhombic phase transition occurs at similar to 110 K for this perovskite composition, as indicated by the change in the diffraction pattern. With decreasing temperature, the quantum yield increases with a concurrent elongation of the carrier lifetimes, indicating suppression of nonradiative recombination pathways. Interestingly, in contrast to single A-site cation perovskites, an additional optical transition appears in the absorption spectrum when the phase transition is approached, which is also reflected in the emission spectrum. We propose that the splitting of the optical absorption and emission is due to local segregation of the mixed cation perovskite during the phase transition.
36 MATERIALS SCIENCE↗
Low Temperature Dynamic Polaron Liquid in a Manganite Exhibiting Colossal Magnetoresistance
Polarons - fermionic charge carriers bearing a strong companion lattice deformation - exhibit a natural tendency for self-localization due to the recursive interaction between electrons and the lattice. While polarons are ubiquitous in insulators, how they evolve in transitions to metallic and superconducting states in quantum materials remains an open question. Here, we use resonant inelastic x-ray scattering to track the electron-lattice coupling in the colossal magneto-resistive bi-layer manganite La 1.2 Sr 1.8 Mn 2 O 7 across its metal-to-insulator transition. The response in the insulating high-temperature state features harmonic emissions of a dispersionless oxygen phonon at small energy transfer. Additionally, upon cooling into the metallic state, we observe a drastic redistribution of spectral weight from the region of these harmonic emissions to a broad high energy continuum. In concert with theoretical calculations, we show that this evolution implies a shift in electron-lattice coupling from static to dynamic lattice distortions that leads to a distinct polaronic ground state in the low temperature metallic phase - a dynamic polaron liquid.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Magnetic frustration driven by conduction carrier blocking in Nd 2 Co 0.85 Si 2.88
The intermetallic compound Nd 2 Co 0.85 Si 2.88 having a triangular lattice could be synthesized in single phase only with defect crystal structure. Investigation through different experimental techniques indicate the presence of two magnetic transitions in the system. As verified experimentally and theoretically, the high-temperature transition $T_H$ ~ 140 K is associated with the development of ferromagnetic interaction between itinerant Co moments, whereas the low-temperature transition at $T_L$ ~ 6.5 K is due to the coupling among Nd–4$\textit{f}$ and Co–3$\textit{d}$ moments, which is antiferromagnetic in nature. Detailed studies of temperature-dependent dc magnetic susceptibility, field dependence of isothermal magnetization, nonequilibrium dynamical behavior, viz., magnetic relaxation, aging effect, magnetic-memory effect, and temperature dependence of heat capacity, along with density functional theory (DFT) calculations, suggest that the ground state is magnetically frustrated spin glass in nature, having competing magnetic interactions of equivalent energies. DFT results further reveal that the 3$\textit{d}$/5$\textit{d}$-conduction carriers are blocked in the system and act as a barrier for the 4$\textit{f}$–4$\textit{f}$ RKKY interactions, resulting in spin frustration. Presence of vacancy defects in the crystal are also conducive to the spin frustration. This is an unique mechanism of magnetic frustration, not emphasized so far in any of the ternary $R_2TX_3$ ($\textit{R}$ = rare earth, $\textit{T}$ = transition elements, and $\textit{X}$ = Si, Ge, In) type compounds. Due to the competing character of the itinerant 3$\textit{d}$ and localized 4$\textit{f}$ moments, the compound exhibits anomalous field dependence of magnetic coercivity. Further, the system also exhibits a considerable magnetic entropy change of –Δ$S_M$ ~ 13.3 J/kg K with a relative cooling power (RCP) of 220 J/kg and adiabatic temperature change $ΔT_{\text{ad}}$ of 6 K for magnetic field change of 70 kOe.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Thermomagnetic properties of Bi 2 Te 3 single crystal in the temperature range from 55 K to 380 K
Magnetothermoelectric transport provides an understanding of coupled electron-hole-phonon current in topological materials and has applications in energy conversion and cooling. In this paper, we study the Nernst coefficient, the magneto-Seebeck coefficient, and the magnetoresistance of single-crystalline Bi 2 Te 3 under external magnetic field in the range of –3T to 3T and in the temperature range of 55 K to 380 K. Moreau's relation is employed to justify both the overall trend of the Nernst coefficient and the temperature at which this coefficient changes sign. We observe a nonlinear relationship between the Nernst coefficient and the applied magnetic field in the temperature range of 55 K to 255 K. An increase in both the Nernst coefficient and the magneto-Seebeck coefficient is observed as the temperature is reduced which can be attributed to the increased mobility of the carriers at lower temperatures. First-principles density functional theory calculations were carried out to physically model the experimental data including electronic and transport properties. Simulation findings agreed with the experiments and provide a theoretical insight to justify the measurements.
36 MATERIALS SCIENCE↗