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At least 91 records · Page 5

Neutron diffraction study of magnetism in van der Waals layered MnBi 2n Te 3n+1

Two-dimensional van der Waals MnBi 2 n Te 3 n +1 ( n = 1, 2, 3, 4) compounds have been recently found to be intrinsic magnetic topological insulators rendering quantum anomalous Hall effect and diverse topological states. Here, we summarize and compare the crystal and magnetic structures of this family, and discuss the effects of chemical composition on their magnetism. We found that a considerable fraction of Bi occupies at the Mn sites in MnBi 2 n Te 3 n +1 ( n = 1, 2, 3, 4) while there is no detectable Mn at the non-magnetic atomic sites within the resolution of neutron diffraction experiments. The occupancy of Mn monotonically decreases with the increase of n . The polarized neutron diffraction on the representative MnBi 4 Te 7 reveals that its magnetization density is exclusively accumulated at the Mn site, in good agreement with the results from the unpolarized neutron diffraction. The defects of Bi at the Mn site naturally explain the continuously reduced saturated magnetic moments from n = 1 to n = 4. The experimentally estimated critical exponents of all the compounds generally suggest a three-dimensional character of magnetism. Our work provides material-specified structural parameters that may be useful for band structure calculations to understand the observed topological surface states and for designing quantum magnetic materials through chemical doping.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Light-Induced Decoupling of Electronic and Magnetic Properties in Manganites

The strongly correlated material La 0.7 ⁢Sr 0.3 ⁢Mn⁢O 3 (LSMO) exhibits metal-to-insulator and magnetic transition near room temperature. Although the physical properties of LSMO can be manipulated by strain, chemical doping, temperature, or magnetic field, they often require large external stimuli. Further, to include additional flexibility and tunability, we developed a hybrid optoelectronic heterostructure that uses photocarrier injection from cadmium sulfide (Cd⁢ S) to an LSMO layer to change its electrical conductivity. LSMO exhibits no significant optical response; however, the Cd ⁢S/LSMO heterostructures show an enhanced conductivity, with a resistance drop of about 37%, at the transition temperature under light stimuli. This enhanced conductivity in response to light is comparable to the effect of a 9 T magnetic field in pure LSMO. Surprisingly, the optical and magnetic responses of Cd⁢ S/LSMO heterostructures are decoupled and exhibit different effects when both stimuli are applied. This unexpected behavior shows that heterostructuring strongly correlated oxides may require a new understanding of the coupling of physical properties across the transitions and provide the means to implement new functionalities.

36 MATERIALS SCIENCE↗

Phase diagrams of single-layer two-dimensional transition metal dichalcogenides: Landau theory

We report single layer (SL) two-dimensional transition metal dichalcogenides (TMDs), such as MoS 2 , ReS 2 , WSe 2 , and MoTe 2 have now become the focus of intensive fundamental and applied research due to their intriguing and tunable physical properties. These materials exhibit a broad range of structural phases that can be induced via elastic strain, chemical doping, and electrostatic field effect. These transformations, in turn, can open and close the band gap of SL-TMDs, leading to metal-insulator transitions, and lead to emergence of more complex quantum phenomena. These considerations necessitate detailed understanding of the mesoscopic mechanisms of these structural phase transitions. Here we develop a Landau-type thermodynamic description of SL-TMDs on a sample of the SL-(MoS 2 ) 1-x -(ReS 2 ) x system and analyze the free energy surfaces, phase diagrams, and order parameter behavior. Our results predict the existence of multiple structural phases with two-, six- and 12-fold degenerated energy minima for in-plane and out-of-plane order parameters. This analysis suggests that out-of-plane ferroelectricity can exist in many of these phases, with the switchable polarization being proportional to the out-of-plane order parameter. We further predict that the domain walls in SL-(MoS 2 ) 1-x -(ReS 2 ) x should become conductive above a certain strain threshold.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Evolution of magnetism, valence, and crystal lattice in EuCd 2 As 2 under pressure

EuCd 2 As 2 has been proposed to be one of the ideal platforms as an intrinsic topological magnetic system, potentially hosting a single pair of Weyl points when it is tuned into the ferromagnetic state with spins aligned out of plane by either external pressure or chemical doping. To investigate the possible realization of an ideal topological state, we have systematically investigated pressure control of the magnetic state, valence, and crystal structure using synchrotron-based time-domain Mössbauer spectroscopy, x-ray absorption spectroscopy, and powder x-ray diffraction. Our experimental results show that the magnetic configuration remains mostly in plane under pressure up to 42.8 GPa and pressure effectively enhances the magnetic ordering temperature. Meanwhile, Eu ions remain divalent when subjected to pressure up to 35.9 GPa, and the trigonal crystal lattice is maintained up to 34.6 GPa. Our work provides valuable experimental data to benchmark future theoretical studies in magnetic topological materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Third-order Hall effect in the surface states of a topological insulator

Time reversal and inversion symmetric materials fail to yield linear and nonlinear responses since they possess net zero Berry curvature. However, higher-order Hall response can be generated in these systems upon constraining the crystalline symmetries. Motivated by the recently discovered third-order Hall (TOH) response mediated by Berry connection polarizability, namely, the variation of the Berry connection with respect to an applied electric field, here, we investigate the existence of such a Hall effect in the surface states of hexagonal warped topological insulators (e.g., Bi 2 Te 3 ) under the application of only electric field. Using the semiclassical Boltzmann formalism, we investigate the effect of tilt and hexagonal warping on the Berry connection polarizability tensor and, consequently, the TOH effect, provided the Dirac cone remains gapless. We find that the magnitude of the response increases significantly with increasing tilt strength and warping, and therefore, they can provide the tunability of this effect. In addition, we also explore the effect of chemical doping on the TOH response in this system. Interestingly, we show, based on the symmetry analysis, that the TOH can be the leading-order response in this system, which can directly be verified in experiments.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Machine learning study of magnetism in uranium-based compounds

Actinide and lanthanide-based materials display exotic properties that originate from the presence of itinerant or localized f electrons and include unconventional superconductivity and magnetism, hidden order, and heavy-fermion behavior. Due to the strongly correlated nature of the 5f electrons, magnetic properties of these compounds depend sensitively on applied magnetic field and pressure, as well as on chemical doping. However, precise connection between the structure and magnetism in actinide-based materials is currently unclear. In this investigation, we established such structure-property links by assembling and mining two datasets that aggregate, respectively, the results of high-throughput density functional theory simulations and experimental measurements for the families of uranium- and neptunium-based binary compounds. Various regression algorithms were utilized to identify correlations among accessible attributes (features or descriptors) of the material systems and predict their cation magnetic moments and general forms of magnetic ordering. Descriptors representing compound structural parameters and cation f-subshell occupation numbers were identified as most important for accurate predictions. The best machine learning model developed employs the random forest regression algorithm. It can predict both spin and orbit moment size with root-mean-square error of 0.17 μ B and 0.19 μ B , respectively. Lastly, the random forest classification algorithm is used to predict the ordering (paramagnetic, ferromagnetic, and antiferromagnetic) of such systems with 76% accuracy.

36 MATERIALS SCIENCE↗

Single crystal growth of iridates without platinum impurities

Iridates have attracted much interest in the last decade for their novel magnetism emerging in the limit of strong spin-orbit coupling and possible unconventional superconductivity. A standard for growing iridate single crystals has been the flux method using platinum crucibles. Here, in this work, we show that this widely used method compromises the sample quality by inclusion of platinum impurities. We find that Sr 2 ⁢IrO 4 single crystals grown in iridium crucibles show remarkable differences from those grown in platinum crucibles in their sample characterizations using Raman spectroscopy, resistivity, magnetization, optical third harmonic generation, resonant x-ray diffraction, and resonant inelastic x-ray scattering measurements. In particular, we show that several peaks of sizable intensities disappear in the Raman spectra of samples free of platinum impurities, and a significantly larger activation energy is extracted from the resistivity data compared to previously reported values. Furthermore, we find no evidence of the previously reported glide-symmetry-breaking structural distortions and confirm the I⁢ 4 1 / acd space group of the lattice symmetry. Although the platinum impurities are not apparent in the magnetic properties and thus went unnoticed in the stoichiometric insulating phase for a long time, their effects can be much more detrimental to transport properties in chemically doped compounds. Therefore, our result suggests using growth methods that avoid platinum impurities for an investigation of the intrinsic physical properties of iridates, and possible superconducting phases.

36 MATERIALS SCIENCE↗

Energy Frontier Research Centers: Center for the Computational Design of Functional Layered Materials (CCDM) August 1, 2014 - July 31, 2018; Center for Complex Materials from First Principles (CCM) August 1, 2018 - July 31, 2021 (Final Report)

The mission of the DOE Energy Frontier Research Centers CCDM (2014-2018) and CCM (2018-2021) was to theoretically develop, computationally apply, and experimentally validate electronic structure methods for all materials, with a focus on the complex materials, especially layered and two-dimensional materials, strongly-correlated materials, and liquid water. This was achieved by over 200 published journal articles authored by about 17 senior investigators from physics and chemistry and from theory, computation, and experiment, plus their collaborators. In particular, the Centers confirmed the predictive power of the SCAN (strongly constrained and appropriately normed) density functional, which was constructed to satisfy 17 known exact constraints and several appropriate norms. Without being fitted to real bonded systems, and at a modest computational cost, SCAN correctly predicted covalent, ionic, metallic, hydrogen, and van der Waals bonds in many challenging materials. SCAN gave an improved description of defects in semiconductors, surface properties of metals, seven phases of ice, liquid water, liquid and supercooled silicon, subtle structural distortions in ferroelectrics, formation energies and structural predictions for solids, and critical pressures for structural phase transitions. Perhaps most remarkably, SCAN correctly described some strongly-correlated materials that were previously believed to be beyond the reach of density-functional approximations. SCAN is the only density functional that correctly predicts the band gap closing under chemical doping of the cuprate high-temperature superconducting materials. SCAN also predicts a landscape of competing stripe and magnetic phases in the cuprates. For some materials with some codes, SCAN has convergence problems that are greatly reduced by the CCM-developed r 2 SCAN, without loss of accuracy or rigor. SCAN and r 2 SCAN still make some self-interaction error, which is greatly reduced by the CCDM/ CCM-developed local orbital scaling correction (LOSC). These Centers further proved that the fundamental energy gaps of a solid from an orbital energy difference and from total energy differences are the same for a large class of generalized Kohn-Sham (GKS) functionals, including SCAN and standard hybrid functionals, and that symmetry breaking arises when a dynamic density fluctuation drops to zero frequency. The Centers identified new mechanisms for catalysis in layered materials with ions intercalated between the layers, investigated charge density waves both in model systems and in real layered materials, studied changes of band gap with the number of layers, and explored topological ultrathin films, bent nanoribbons, and defects.

08 HYDROGEN↗

Strain Engineering: A Pathway for Tunable Functionalities of Perovskite Metal Oxide Films

Perovskite offers a framework that boasts various functionalities and physical properties of interest such as ferroelectricity, magnetic orderings, multiferroicity, superconductivity, semiconductor, and optoelectronic properties owing to their rich compositional diversity. These properties are also uniquely tied to their crystal distortion which is directly affected by lattice strain. Therefore, many important properties of perovskite can be further tuned through strain engineering which can be accomplished by chemical doping or simply element substitution, interface engineering in epitaxial thin films, and special architectures such as nanocomposites. In this review, we focus on and highlight the structure–property relationships of perovskite metal oxide films and elucidate the principles to manipulate the functionalities through different modalities of strain engineering approaches.

36 MATERIALS SCIENCE↗

Novel Charge-Ordered States in 1 T -IrTe 2

1T-IrTe 2 exhibits an intriguing series of charge-ordered states in both bulk and atomically thin layers. The charge orders in IrTe 2 emerge with consecutive first-order structural transitions involving in-plane Ir–Ir dimerization and interlayer Te–Te depolymerization, resulting in stripe patterns with various periods. Upon chemical doping, 1T-IrTe 2 can also be driven into a superconductor. Despite the intense research effort, a comprehensive understanding of the nature of the charge ordering and its relation to the superconductivity is yet to be reached. This review provides an overview of the novel charge orders and the emergence of superconductivity in IrTe 2 . Finally, we further introduce the recent studies on IrTe 2 nanoflake, in which novel charge orders attainable only in two-dimensional limits lay the grounds for an exotic phase diagram.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Probing and manipulating magnetic and 2D quantum materials using ultrafast laser and high harmonic sources

The ability to probe the full dynamic response of quantum materials on the length- and time-scales (Å to attoseconds on up) fundamental to charge, spin and phonon interactions is leading to a host of new discoveries. The coupled interactions between charges, spins, orbital and lattice degrees of freedom are key to determining the state of a material, whether metallic, insulating, superconducting or magnetic. Under thermal equilibrium conditions these states can be tuned by varying the temperature, pressure, chemical doping or dimensionality. However, their inherent complexity and rich phase landscape make them challenging to understand or manipulate deterministically. Fortunately, ultrafast light sources have undergone remarkable advances in recent years, achieving what was merely a dream three decades ago, i.e., full coherent control of light fields spanning the THz to the X-ray regions. Here, these new capabilities are providing powerful new tools for coherently manipulating and probing quantum materials using light. Recent advances in high harmonic generation (HHG) have provided new techniques for uncovering new phases and couplings in 2D and magnetic materials, using femtosecond lasers to coherently manipulate and tune the properties and interactions in the material, and HHG as a probe to map out these new phases and couplings. There are several beautiful recent observations of exciting new states in materials using light, but in some cases, the limited experimental data points made it challenging to validate an interpretation. The new ability of ultrafast HHG-based photoemission and magneto-optic spectroscopies to precisely probe multiple phases, electronic and magnetic order parameters, when combined with scanning the laser excitation fluence, is allowing us to map how material phases, magnetic states, and electron-phonon-spin couplings in these delicate materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Trifluoromethylation of 2D Transition Metal Dichalcogenides: A Mild Functionalization and Tunable p‐Type Doping Method

Chemical modification is a powerful strategy for tuning the electronic properties of 2D semiconductors. Here, in this study, we report the electrophilic trifluoromethylation of 2D WSe2 and MoS 2 under mild conditions using the reagent trifluoromethyl thianthrenium triflate (TTT). Chemical characterization and density functional theory calculations reveal that the trifluoromethyl groups bind covalently to surface chalcogen atoms as well as oxygen substitution sites. Trifluoromethylation induces p-type doping in the underlying 2D material, enabling the modulation of charge transport and optical emission properties in WSe 2 . This work introduces a versatile and efficient method for tailoring the optical and electronic properties of 2D transition metal dichalcogenides.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Nucleation of cubic boron nitride on boron-doped diamond via plasma enhanced chemical vapor deposition

Cubic boron nitride (c-BN), with a small 1.4% lattice mismatch with diamond, presents a heterostructure with multiple opportunities for electronic device applications. However, the formation of c-BN/diamond heterostructures has been limited by the tendency to form hexagonal BN at the interface. In this study, c-BN has been deposited on free standing polycrystalline and single crystal boron-doped diamond substrates via electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD), employing fluorine chemistry. In situ x-ray photoelectron spectroscopy (XPS) is used to characterize the nucleation and growth of boron nitride (BN) films as a function of hydrogen gas flow rates during deposition. The PECVD growth rate of BN was found to increase with increased hydrogen gas flow. In the absence of hydrogen gas flow, the BN layer was reduced in thickness or etched. The XPS results show that an excess of hydrogen gas significantly increases the percent of sp2 bonding, characteristic of hexagonal BN (h-BN), particularly during initial layer growth. Reducing the hydrogen flow, such that hydrogen gas is the limiting reactant, minimizes the sp2 bonding during the nucleation of BN. TEM results indicate the partial coverage of the diamond with thin epitaxial islands of c-BN. The limited hydrogen reaction is found to be a favorable growth environment for c-BN on boron-doped diamond.

Physics↗

Chemical changes from N-doped graphene and Metal-Organic Frameworks to N-G/MOF composites for improved electrocatalytic activity

Integrating N doped graphene (N G) with Metal Organic Frameworks (MOFs) enhances catalytic activity for oxygen reduction reaction (ORR), often exceeding both the performances of their precursors and, in some cases, even PGM based catalysts. However, the factors driving this improved catalytic activity in N G/MOF composites remain unexplored, particularly from the perspective of the chemical changes. To investigate the chemical changes in N G and MOF upon their integration and the implications of these changes on ORR catalytic activity, an N G/MOF was synthesized from N G with a MOF (ZIF 8) following a mechanochemical wet ball milling process. The N G, ZIF 8, and N G/MOF samples were examined for changes in elemental composition, chemical state of carbon, different nitrogen and carbon bonds, and other chemical interactions. In the N G/MOF catalyst, compared to its N G and ZIF 8 precursors, the relative oxygen content increased, indicating the formation of additional oxygen containing groups. The C 1s peak shifted to a lower binding energy in N G/MOF, suggesting changes in the overall chemical or oxidation state of the carbon atoms. Besides, the increase in pyridinic N functional groups in N G/MOF points to the formation of additional active sites. Furthermore, the formation of C Zn bonds in N G/MOF suggests the probable emergence of single atom Zn sites, while the increase in C=O bonds points to the formation of carboxyl or carbonyl groups. These chemical changes could be linked to the enhanced electrocatalytic activity of the N G/MOF composite for ORR. In conclusion, this study may also be beneficial for other research focused on developing composite catalysts involving various N G and MOF materials.

25 ENERGY STORAGE↗

Effects of Sn substitution in SrRuO 3 epitaxial films

Epitaxial SrRu 1–x Sn x O 3 (0 ≤ x ≤ 1) thin films were deposited on SrTiO 3 (001) substrates by sequential two-target synthesis using pulsed laser deposition to achieve stable phases in this family of quaternary perovskites. The SrRu 1–x Sn x O 3 films exhibit a good crystalline quality, a sharp interface between film and substrate, and an atomically smooth surface. A gradual expansion of the c-axis lattice parameter was observed with Sn doping serving as a means to tune chemical pressure and magnetism. With an increase in Sn doping, the resistivity of the film increased, and the ferromagnetism decreased. These results illustrate use of lattice engineering, e.g., tuning of c-axis lattice parameter with chemical doping, to control electronic and magnetic properties of epitaxial thin films for applications in oxide electronics.

36 MATERIALS SCIENCE↗

Oxygen redox activities governing high-voltage charging reversibility of Ni-rich layered cathodes

A schematic illustration indicative of the improved structural reversibility through stabilizing oxidized oxygen by Al doping. The chemical reactions and phase transitions at high voltages are generally considered to determine the electrochemical properties of high-voltage layered cathodes such as Ni-rich rhombohedral oxides. Even if significantly higher SOCs (states-of-charge) are utilized above the capability of transition metal redox (primarily Ni and Co), the effect of oxygen redox on Ni-rich rhombohedral oxides still looks mysterious thereby necessitating research that can clarify the relationship between redox reactions and phase transitions. Here, we performed a comprehensive and comparative study of the cationic and anionic redox reactions, as well as the structural evolution of a series of commercial Ni-rich layered oxides with and without Al doping. We combined the results from X-ray spectroscopy, operando electrochemical mass spectrometry, and neutron diffraction with electrochemical properties and thereby revealed the different oxygen redox activities associated with structural and electrochemical degradations. We reveal that Al doping suppresses the irreversible oxygen release but enhances the lattice oxygen oxidization. With this modulated oxygen redox activity, the Ni-rich layered oxides’ notorious H2–H3 structural phase transition becomes highly reversible. Our findings disentangle the different oxygen redox activities during high-voltage cycling and clarify the role of dopants in the Ni-rich layered oxides in terms of structural and electrochemical stability, shedding light on the future direction of optimizing layered cathode materials for safer high energy-density secondary batteries.

Lee, Gi-Hyeok↗