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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5

Molecular engineering of fluoroether electrolytes for lithium metal batteries

Fluoroether solvents are promising electrolyte candidates for high-energy-density lithium metal batteries, where high ionic conductivity and oxidative stability are important metrics for design of new systems. Recent experiments have shown that these performance metrics, particularly stability, can be tuned by changing the fraction of ether and fluorine content. However, little is known about how different molecular architectures influence the underlying ion transport mechanisms and conductivity. Here, we use all-atom molecular dynamics simulations to elucidate the ion transport and solvation characteristics of fluoroether chains of varying length, and having different ether segment and fluorine terminal group contents. The design rules that emerge from this effort are that solvent size determines lithium-ion transport kinetics, solvation structure, and solvation energy. In particular, the mechanism for lithium-ion transport is found to shift from ion hopping between solvation sites located in different fluoroether chains in short-chain solvents, to ion–solvent co-diffusion in long-chain solvents, indicating that an optimum exists for molecules of intermediate length, where hopping is possible but solvent diffusion is fast. Consistent with these findings, our experimental measurements reveal a non-monotonic behavior of the effects of solvent size on lithium-ion conductivity, with a maximum occurring for medium-length solvent chains. Finally, a key design principle for achieving high ionic conductivity is that a trade-off is required between relying on shorter fluoroether chains having high self-diffusivity, and relying on longer chains that increase the stability of local solvation shells.

25 ENERGY STORAGE↗

Disorder recovers the Wiedemann-Franz law in the metallic phase of VO 2

At temperatures higher than 341 K, vanadium dioxide (VO 2 ) is a strongly correlated metal with resistivity exceeding the Mott-Ioffe-Regel limit. Its electronic thermal conductivity is lower than that predicted by the Wiedemann-Franz (WF) law, and can be explained by nonquasiparticle transport where heat and charge currents follow separate diffusive modes. In contradiction, the Wiedemann-Franz law is a direct consequence of quasiparticle transport where charge carriers are elastically scattered. In this work, we enhance elastic electron scattering in VO 2 by introducing atomic disorder with ion irradiation. Furthermore, a gradual and eventually full recovery of the WF law is observed at high defect densities. This observation provides an example that connects hydrodynamic quasiparticle transport to nonquasiparticle transport in metallic systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Study of a High Voltage Ion Engine Power Supply

A complete laboratory breadboard version of a ion engine power converter was built and tested. This prototype operated on a line voltage of 80-120 Vdc, and provided output ratings of 1100 V at 1.8 kW, and 250 V at 20 mA. The high-voltage (HV) output voltage rating was revised from the original value of 1350 V at the beginning of the project. The LV output was designed to hold up during a 1-A surge current lasting up to 1 second. The prototype power converter included a internal housekeeping power supply which also operated from the line input. The power consumed in housekeeping was included in the overall energy budget presented for the ion engine converter. HV and LV output voltage setpoints were commanded through potentiometers. The HV converter itself reached its highest power efficiency of slightly over 93% at low line and maximum output. This would dip below 90% at high line. The no-load (rated output voltages, zero load current) power consumption of the entire system was less than 13 W. A careful loss breakdown shows that converter losses are predominately Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) conduction losses and HV rectifier snubbing losses, with the rectifier snubbing losses becoming predominant at high line. This suggests that further improvements in power efficiency could best be obtained by either developing a rectifier that was adequately protected against voltage overshoot with less snubbing, or by developing a pre-regulator to reduced the range of line voltage on the converter. The transient testing showed the converter to be fully protected against load faults, including a direct short-circuit from the HV output to the LV output terminals. Two currents sensors were used: one to directly detect any core ratcheting on the output transformer and re-initiate a soft start, and the other to directly detect a load fault and quickly shut down the converter for load protection. The finished converter has been extensively fault tested without failure. The finished converter has been packaged suitable for use as a laboratory prototype for further testing. The finished converter is readily transportable. An article on design issues for high voltage converters for ion engines is included as an attachement.

Stuart, Thomas A.↗

Interface states and internal photoemission in p-type GaAs metal-oxide-semiconductor surfaces

An interface photodischarge study of p-type GaAs metal-oxide-semiconductor (MOS) structures revealed the presence of deep interface states and shallow donors and acceptors which were previously observed in n-type GaAs MOS through sub-band-gap photoionization transitions. For higher photon energies, internal photoemission was observed, i.e., injection of electrons to the conduction band of the oxide from either the metal (Au) or from the GaAs valence band; the threshold energies were found to be 3.25 and 3.7 + or - 0.1 eV, respectively. The measured photoemission current exhibited a thermal activation energy of about 0.06 eV, which is consistent with a hopping mechanism of electron transport in the oxide.

Kashkarov, P. K.↗

Metal-organic pulsed laser deposition for stoichiometric complex oxide thin films

Methods and systems for forming complex oxide films are provided. Also provided are complex oxide films and heterostructures made using the methods and electronic devices incorporating the complex oxide films and heterostructures. In the methods pulsed laser deposition is conducted in an atmosphere containing a metal-organic precursor to form highly stoichiometric complex oxides.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Metal-organic pulsed laser deposition for stoichiometric complex oxide thin films

Methods and systems for forming complex oxide films are provided. Also provided are complex oxide films and heterostructures made using the methods and electronic devices incorporating the complex oxide films and heterostructures. In the methods pulsed laser deposition is conducted in an atmosphere containing a metal-organic precursor to form highly stoichiometric complex oxides.

Eom, Chang-Beom↗

Metal-organic pulsed laser deposition for stoichiometric complex oxide thin films

Methods and systems for forming complex oxide films are provided. Also provided are complex oxide films and heterostructures made using the methods and electronic devices incorporating the complex oxide films and heterostructures. In the methods pulsed laser deposition is conducted in an atmosphere containing a metal-organic precursor to form highly stoichiometric complex oxides.

Eom, Chang-Beom↗

Recent development of thermoelectric nanofibers and their composites

This review deals with the recent development of thermoelectric (TE) nanofibers and their composite materials. Typical processing and manufacturing technologies for preparing nanofibers are introduced. Specifically, electrospinning, electrochemical oxidation, and liquid phase chemical deposition approaches are discussed. Various kinds of TE nanofibers are introduced one-by-one. Several important inorganic and organic nanofibers including carbon-based nanofibers, conducting polymer-based nanofibers, and transition metal oxide-based nanofibers with significant thermoelectric responses are shown. Thermoelectric properties of some important nanofibers are compared. The applications of TE nanofibers for energy conversion, thermal imaging and temperature sensing are illustrated. Perspectives and concluding remarks are presented.

42 ENGINEERING↗

Connecting Interfacial Mechanical Adhesion, Efficiency, and Operational Stability in High Performance Inverted Perovskite Solar Cells

Carbazole-based self-assembled monolayers (SAMs) at the interface between the metal-halide perovskite (MHP) and the transparent conducting oxide (TCO) serve the function of hole-transport layers in p-i-n "inverted" perovskite solar cells (PSCs). In this report we show that the use of an iodine-terminated carbazole-based SAM increases the interfacial mechanical adhesion dramatically (2.6-fold) and that this is responsible for substantial improvements in the interfacial morphology, photocarrier transport, and operational stability. While the improved morphology and optoelectronic properties impart high efficiency (up to 25.39%) to the PSCs, the enhanced adhesion suppresses nucleation and propagation of pores/cracks during PSC operation, resulting in the retention of 96% of the initial efficiency after 1000 h of continuous-illumination testing at the maximum power-point. This demonstrates the strong connection between judicious interfacial adhesion toughening and simultaneous enhancement in the efficiency and operational stability of p-i-n PSCs, with broader implications for the reliability and durability of perovskite photovoltaics before they can be commercialized.

14 SOLAR ENERGY↗

Fast and accurate calculation of EXAFS Debye-Waller factors in U⁢O2 using the dynamical matrix method

Theoretical modeling of bonding dynamics in metal oxides is required for predicting their thermal conductivity, catalytic activity, and mechanical properties. A primary challenge is the scarcity of experimental methods for validating theoretical predictions of these atomic-scale dynamics. This work presents a workflow that uses experimental extended x-ray absorption fine structure (EXAFS) data collected at high temperatures to validate an interatomic force field for uranium dioxide (UO2), an important model material. The validated force field is then used to drive computationally intensive molecular dynamics (MD) simulations and as input for the much faster dynamical matrix Debye-Waller (DMDW) method. The predicted values of the Debye-Waller factors from the DMDW calculations are in good agreement with those obtained from the MD simulations, with residual pair-specific differences attributable to quantum zero-point motion at low temperatures and lattice anharmonicity at high temperatures. We further show that theoretical EXAFS spectra constructed directly from DMDW-derived Debye-Waller factors reproduce the experimental data (at relatively low temperatures) with accuracy comparable to full MD-EXAFS, providing an additional validation of the choice of the potential. This study establishes a validated, rapid computational pathway for modeling bond dynamics, naturally incorporating quantum nuclear\\\\r\\\\nstatistics absent in classical simulations, which are essential for the mechanistic understanding of complex oxide materials.

58 GEOSCIENCES↗

Some Properties of Beryllium Oxide and Beryllium Oxide - Columbium Ceramals

High-temperature tensile and thermal-shock investigations were conducted on beryllium oxide and beryllium oxide plus columbium metal additions. X-ray diffraction and metallographic results are given. The tensile strength of 6150 pounds per square inch for beryllium oxide at 1800 degrees F compared favorably with the zirconia bodies previously tested. Additions of 2, 5, 8, 10, 12, and 15 percent by weight of columbium metal failed to improve the shock resistance over that of pure beryllium oxide.

Robards, C F↗

Advanced CMOS Radiation Effects Testing and Analysis

Presentation at the annual NASA Electronic Parts and Packaging (NEPP) Program Electronic Technology Workshop (ETW). The material includes an update of progress in this NEPP task area over the past year, which includes testing, evaluation, and analysis of radiation effects data on the IBM 32 nm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) process. The testing was conducted using test vehicles supplied by directly by IBM.

cmos↗

Graphene-Based Electrode for a Supercapacitor

A supercapacitor electrode mechanism comprising an electrically conductive, porous substrate, having one or more metallic oxides deposited on a first surface and a chemically reduced graphene oxide deposited on a second surface, to thereby provide an electrical double layer associated with the substrate. The substrate may be carbon paper or a similar substance. The layers of the supercapacitor are optionally rolled into an approximately cylindrical structure.

Chen, Bin↗

Cycling protocol for alkaline batteries

A method of operating a battery comprises discharging a cathode comprising manganese dioxide to within a 2nd electron capacity of the manganese dioxide at a C-rate of equal to or slower than C/10, recharging the battery, and cycling the battery during use a plurality of times. The cathode is in a battery, and the battery comprises the cathode, an anode, a separator disposed between the anode and the cathode, and an electrolyte. The cathode comprises the manganese dioxide and a conductive carbon. The anode comprises: a metal component and a conductive carbon. The metal component can be a metal, metal oxide, or metal hydroxide, and the metal of the metal component can be zinc, lithium, aluminum, magnesium, iron, cadmium and a combination thereof.

Kolhekar, Snehal↗

Electrically-driven IMT and volatile memristor behavior in NdNiO 3 films

Abstract Transition metal oxides with insulator-metal transitions (IMTs) are uniquely suited for volatile memristor devices that mimic the spiking of biological neurons. Unlike most non-volatile memristors, which often operate via ion migration into filaments, volatile devices utilize a reversible phase change that returns to a ground state in the absence of applied stimulus. In these devices, Joule heating triggers the IMT and changes the bulk resistivity rather than influencing conduction through defects, as in previous studies. This volatile resistive switching behavior has previous been leveraged in niobium and vanadium oxides, but not in rare-earth nickelates, despite their tunable transition temperatures. This study demonstrates an electrically driven IMT in the prototypical rare-earth nickelate, NdNiO 3 , in large area devices. While previous work examining the electrically-driven IMT in NdNiO 3 suggests defect-dominated conduction, this study shows clear s-type negative differential resistance (NDR) consistent with temperature-dependent resistivity measurements. The NDR peak-to-valley voltage scales linearly with temperature as expected for conductivity pathways dominated by bulk IMT behavior. Unlike other transition metal oxides, which are modeled using the insulator-metal phase fraction as the internal state variable, a thermoelectric model with temperature as the internal state variable is found to more accurately describe the current–voltage characteristic of NdNiO 3 volatile memristors. Overall, we report the synthesis, fabrication, and characterization of NdNiO 3 volatile memristors with resistivity dominated by bulk-like IMT behavior which is scalable and not dependent upon oxygen vacancy migration or defect mediated conduction pathways.

36 MATERIALS SCIENCE↗

Friction and wear of some ferrous-base metallic glasses

Sliding friction experiments, X-ray photoelectron spectroscopy (XPS) analysis, and electron microscopy and diffraction studies were conducted with ferrous base metallic glasses (amorphous alloys) in contact with aluminum oxide at temperatures to 750 C in a vacuum. Sliding friction experiments were also conducted in argon and air atmospheres. The results of the investigation indicate that the coefficient of friction increases with increasing temperature to 350 C in vacuum. The increase in friction is due to an increase in adhesion resulting from surface segregation of boric oxide and/or silicon oxide to the surface of the foil. Above 500 C the coefficient of friction decreased rapidly. The decrease correlates with the segregation of boron nitride to the surface. Contaminants can come from the bulk of the material to the surface upon heating and impart boric oxide and/or silicon oxide at 350 C and boron nitride above 500 C. The segregation of contaminants is responsible for the friction behavior. The amorphous alloys have superior wear resistance to crystalline 304 stainless steel. The relative concentrations of the various constituents at the surfaces of the amorphous alloys are very different from the nominal bulk compositions.

Miyoshi, K.↗

Friction and wear of some ferrous-base metallic glasses

Sliding friction experiments, X-ray photoelectron spectroscopy (XPS) analysis, and electron microscopy and diffraction studies were conducted with ferrous base metallic glasses (amorphous alloys) in contact with aluminium oxide at temperatures to 750 C in a vacuum. Sliding friction experiments were also conducted in argon and air atmospheres. The results of the investigation indicate that the coefficient of friction increases with increasing temperature to 350 C in vacuum. The increase in friction is due to an increase in adhesion resulting from surface segregation of boric oxide and/or silicon oxide to the surface of the foil. Above 500 C the coefficient of friction decreased rapidly. The decrease correlates with the segregation of boron nitride to the surface. Contaminants can come from the bulk of the material to the surface upon heating and impart boric oxide and/or silicon oxide at 350 C and boron nitride above 500 C. The segregation of contaminants is responsible for the friction behavior. The amorphous alloys have superior wear resistance to crystalline 304 stainless steel. The relative concentrations of the various constituents at the surfaces of the amorphous alloys are very different from the nominal bulk compositions.

Miyoshi, K.↗

Structure-Dependent Lithium Metal Reactivity of Lithium Lanthanum Titanium Oxide Solid Electrolytes

Ongoing efforts to design stable, ionically conductive solid-state electrolytes (SSEs) for next-generation solid-state batteries make it clear that both long and short-range structural order strongly influence materials performance. However, clear structure-property relationships are generally lacking, making it difficult to develop design rules for improving the (electro) chemical stability of SSEs. Here, in this work, we synthesize epitaxial, single-crystal lithium lanthanum titanium oxide (LLTO) films and demonstrate that the kinetics of Ti 4+ reduction and lithium intercalation depend sensitively on the crystal orientation, with electrochemical stability increasing as LLTO (001) < (110) similar to (112) < (100). However, thermodynamic stability is ultimately unaffected-all orientations fully reduce after extended contact with Li metal. In contrast, amorphous LLTO films exhibit minimal, self-limiting reactivity that results in an interface that is stable to extended contact with Li metal. The results demonstrate the potential to engineer crystal lattice strain and long-range order to differentially tune the stability of the solid electrolyte toward reactive lithium metal and cathode materials, suggesting strategies for enabling the wider deployment of LLTO and other ionically conductive ceramic films in advanced energy storage technologies

Ketter, Benjamin [Argonne National Laboratory (ANL↗