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Structural, electronic, and optical-absorption properties of 2D Si thin films

Recent experimental studies highlighted the potential of thin-film crystalline silicon (Si) for high-efficiency solar cells. Using density functional theory, we investigated 2D Si thin films across various orientations, thicknesses, and surface structures to elucidate their structure–property relationships. Through surface-energy calculations and Wulff construction, we determined the crystal habit of Si, which aligns with available experimental observations. Electronic-structure calculations underscored the critical role of valence saturation on surfaces in enabling semiconducting behavior in Si thin films, essential for optical applications. From optical-absorption calculations, we identified the surface index exhibiting the highest absorption coefficients for thin films Si solar cell applications.

36 MATERIALS SCIENCE↗

Characterization of Engineered Pinholes in Dielectric Stacks of High-Performance Poly-Silicon Passivating Contacts

Passivating contact structures are expected to be implemented in > 50 % of industrially manufactured silicon photovoltaics produced over the next decade. One type of passivating contact utilizes a c-Si/dielectric/doped poly-Si layer stack. In cases where the dielectric layer/s are thick enough to impede tunneling of charge carriers, it was shown that disruptions (pinholes) in the dielectric are required to facilitate transport.[1] Pinholes in SiOx layers have typically been formed via high temperature annealing that allows localized breakup of this layer. This approach has drawbacks; 1) high temperature annealing increases cost and 2) pinhole formation is sensitive to both the SiOx thickness and wafer surface morphology making control of density and dimensions difficult. Recently, an alternative method of pinhole formation relying on metal assisted chemical etching (MACE) was shown to allow control over pinhole areal densities.[2] Such control is critical as both the density and dimensions of the pinholes determine saturation current density and contact resistivity. The contacts formed with the MACE process are known as polysilicon on locally etched oxide or PLEO and also result in low saturation current densities and low contact resistivity due to SiOx passivation and engineered pinhole enabled charge carrier transport, respectively. Photovoltaic devices with efficiencies greater than 20 % have recently been produced with these contacts, demonstrating the viability of contacts with engineered pinholes. Experimentally, preferential local collection of excess charge carriers has been observed and definitively connected to thermally induced pinholes in thick SiOx layers within c-Si/SiOx/poly-Si contact structures.[3] Recent work has shown that enhanced local collection of excess carriers can result from enhanced diffusion of dopants through pinholes in SiOx layers.[4] This study was restricted to simulation and characterization of poly-Si with the same dopant type as the c-Si substrates. In this work we focus our analysis on boron doped poly-Si with different stacks of dielectric layers (PLEO and PLENO where the N refers to a SiNy layer on top of the SiOx) on n-type crystalline silicon. This provides insight into how engineered pinholes affect charge collection across the p-n junction. Like previous observations of locally enhanced carrier transport through thermally induced pinholes, the EBIC images in Figure 1 shows that engineered pinholes in PLENO (1a) and PLEO (1b) also exhibit locally enhanced carrier transport at pinhole locations (bright spots in the images). We will also present detailed correlative nanoscale structural and chemical analysis using TEM imaging and EELS analysis with sample preparation guided by EBIC imaging. This allows us to connect the density and dimensions of engineered pinholes with charge carrier transport and measured photovoltaic device parameters. Our findings will accelerate the adoption of PLEO and PLENO contacts in industrially manufactured photovoltaic devices.

EBIC↗

Multi–Resonant Mie Resonator Arrays for Broadband Light Trapping in Ultrathin c–Si Solar Cells

Effective photon management is critical to realize high power conversion efficiencies for thin crystalline silicon (c–Si) solar cells. Standard few–100–µm–thick bulk cells achieve light trapping with macroscopic surface textures covered by thin, continuous antireflection coatings. Such sizeable textures are challenging to implement on ultrathin cells. Here, it is illustrated how nanoscale Mie–resonator–arrays with a bimodal size distribution support multiple resonances that can work in concert to achieve simultaneous antireflection and light–trapping across the broad solar spectrum. The effectiveness of these light–trapping antireflection coatings is experimentally demonstrated on a 2.8 µm–thick c–Si solar cell. The measured short–circuit current and corresponding power conversion efficiency are notably improved, achieving efficiencies as high as 11.2%. Measurements of the saturation current density on completed cells indicate that thermal oxides can effectively limit surface recombination. Finally, the presented design principles are applicable to a wide range of solar cells.

14 SOLAR ENERGY↗

Evaluation of Hybrid Perovskite Prototypes After 10-Month Space Flight on the International Space Station

Metal halide perovskites (MHPs) have emerged as a prominent new photovoltaic material combining a very competitive power conversion efficiency that rivals crystalline silicon with the added benefits of tunable properties for multijunction devices fabricated from solution which can yield high specific power. Perovskites have also demonstrated some of the lowest temperature coefficients and highest defect tolerance, which make them excellent candidates for aerospace applications. However, MHPs must demonstrate durability in space which presents different challenges than terrestrial operating environments. To decisively test the viability of perovskites being used in space, a perovskite thin film is positioned in low earth orbit for 10 months on the International Space Station, which was the first long-duration study of an MHP in space. Postflight high-resolution ultrafast spectroscopic characterization and comparison with control samples reveal that the flight sample exhibits superior photo-stability, no irreversible radiation damage, and a suppressed structural phase transition temperature by nearly 65 K, broadening the photovoltaic operational range. Further, significant photo-annealing of surface defects is shown following prolonged light-soaking postflight. Here these results emphasize that methylammonium lead iodide can be packaged adequately for space missions, affirming that space stressors can be managed as theorized.

14 SOLAR ENERGY↗

Advancing reliability assessments of photovoltaic modules and materials using combined-accelerated stress testing

Previously undiscovered failure modes in photovoltaic (PV) modules continue to emerge in field installations despite passing protocols for design qualification and quality assurance. Failure to detect these modes prior to widespread use could be attributed to the limitations of present-day standard accelerated stress tests (ASTs), which are primarily designed to identify known degradation or failure modes at the time of development by applying simultaneous or sequential stress factors (usually two at most). Here, we introduce an accelerated testing method known as the combined-accelerated stress test (C-AST), which simultaneously combines multiple stress factors of the natural environment. Simultaneous combination of multiple stress factors allows for improved identification of failure modes with better ability to detect modes not known a priori. A demonstration experiment was conducted that reproduced the field-observed cracking of polyamide- (PA-) and polyvinylidene fluoride (PVDF)–based backsheet films, a failure mode that was not detected by current design qualification and quality assurance testing requirements. In this work, a two-phase testing protocol was implemented. The first cycle (“Tropical”) is a predominantly high-humidity and high-temperature test designed to replicate harsh tropical climates. The second cycle (“Multi-season”) was designed to replicate drier and more temperate conditions found in continental or desert climates. Testing was conducted on 2 × 2-cell crystalline-silicon cell miniature modules constructed with both ultraviolet (UV)–transmitting and UV-blocking encapsulants. Cracking failures were observed within a cumulative 120 days of the Tropical condition for one of the PA-based backsheets and after 84 days of Tropical cycle followed by 42 days of the Multi-season cycle for the PVDF-based backsheet, which are both consistent with failures seen in fielded modules. In addition to backsheet cracking, degradation modes were observed including solder/interconnect fatigue, various light-induced degradation modes, backsheet delamination, discoloration, corrosion, and cell cracking. The ability to simultaneously apply multiple stress factors may allow many of the test sequences within the standardized design qualification procedure to be performed using a single test setup.

14 SOLAR ENERGY↗

Results from an international interlaboratory study on light‐ and elevated temperature‐induced degradation in solar modules

Abstract This paper reports the results of an international interlaboratory comparison study on light‐ and elevated temperature‐induced degradation (LETID) on crystalline silicon photovoltaic (PV) modules. A large global network of PV module manufacturers and PV testing laboratories collaborated to design a protocol for LETID detection and screen a large and diverse set of prototype modules for LETID. Results across labs indicate the reproducibility of LETID testing is likely within ±1% of maximum power (P MP ). In intentionally engineered LETID‐sensitive modules, mean degradation after the prescribed detection stress is roughly 6% P MP . In other module types the LETID sensitivity is smaller, and in some we observe essentially negligible degradation attributable to LETID. In LETID‐sensitive modules, both open‐circuit voltage (V OC ) and short‐circuit current (I SC ) degrade by a roughly similar magnitude. We observe, as do previous studies, that LETID affects each cell in a module differently. An investigation of the potential mismatch losses caused by nonuniform LETID degradation found that mismatch loss is insignificant compared to the estimated loss of cell I SC , which drives loss of module I SC . Overall, this work has helped inform the creation of a forthcoming standard technical specification for LETID testing of PV modules, IEC TS 63342 ED1, and should aid in the interpretation of results from that and other LETID tests.

14 SOLAR ENERGY↗

Open‐source photovoltaic model pipeline validation against well‐characterized system data

Abstract All freely available plane‐of‐array (POA) transposition models and photovoltaic (PV) temperature and performance models in pvlib‐python and pvpltools‐python were examined against multiyear field data from Albuquerque, New Mexico. The data include different PV systems composed of crystalline silicon modules that vary in cell type, module construction, and materials. These systems have been characterized via IEC 61853‐1 and 61853‐2 testing, and the input data for each model were sourced from these system‐specific test results, rather than considering any generic input data (e.g., manufacturer's specification [spec] sheets or generic Panneau Solaire [PAN] files). Six POA transposition models, 7 temperature models, and 12 performance models are included in this comparative analysis. These freely available models were proven effective across many different types of technologies. The POA transposition models exhibited average normalized mean bias errors (NMBEs) within ±3%. Most PV temperature models underestimated temperature exhibiting mean and median residuals ranging from −6.5°C to 2.7°C; all temperature models saw a reduction in root mean square error when using transient assumptions over steady state. The performance models demonstrated similar behavior with a first and third interquartile NMBEs within ±4.2% and an overall average NMBE within ±2.3%. Although differences among models were observed at different times of the day/year, this study shows that the availability of system‐specific input data is more important than model selection. For example, using spec sheet or generic PAN file data with a complex PV performance model does not guarantee a better accuracy than a simpler PV performance model that uses system‐specific data.

14 SOLAR ENERGY↗

Field‐representative evaluation of PID‐polarization in TOPCon PV modules by accelerated stress testing

Abstract Potential‐induced degradation‐polarization (PID‐p) can reduce module power, but how to project the extent to which PID‐p may occur in field conditions considering the factors of system voltage, condensed moisture, temperature, and illumination has not been clarified. Using tunnel oxide passivated contact (TOPCon) modules, this work demonstrates a method to test full‐size crystalline silicon PV modules for PID‐p to provide field‐representative results. In initial screening tests with positive or negative 1000 V electrical bias applied at 60°C for 96 h using Al foil electrodes on the glass surfaces, the module type exhibited reversible PID‐p only on the front face when the cell circuit was in negative voltage potential. No PID was detected on the rear after testing in either polarity. We then evaluated the PID‐p sensitivity on the front side under different UV irradiances while maintaining the glass surface wet to estimate real‐world susceptibility to PID‐p. The magnitude of the observed behavior was fit using a previously developed charge transfer and depletion by light model. Whereas power loss with −1000 V applied to the cell circuit at 60°C for 96 h in the dark was about 30%, testing the module front under 0.051 W·m −2 nm −1 at 340 nm UVA irradiation using fluorescent tubes, the mean degradation was only 3%. When the modules were tested in the dark for PID‐p with in situ dark current–voltage (I‐V) characterization, the thermal activation energy for degradation was 0.71 eV; for recovery in the dark, it was 0.58 eV. Whereas recovery from the degraded state at 60°C in the dark without voltage bias was 5% absolute in 38 h, rapid recovery of about 5% absolute was observed with 1000 W·s/m 2 exposure at 25°C using a flash tester.

14 SOLAR ENERGY↗

Scalable Two–Step Production of High–Efficiency Perovskite Solar Cells and Modules

Perovskite solar cells (PSCs) fabricated in laboratories have already achieved power conversion efficiency (PCE) comparable to market-dominant crystalline silicon solar cells. However, this promising photovoltaic technology suffers from severe loss of PCE during scaling up, limiting its progress toward commercialization. One critical question is to develop scalable, low-cost, high throughput, and well-controlled production methods to deposit high-quality perovskite films. Among various approaches, two-step sequential deposition methods have their unique advantages but have been long overlooked. This review provides an overview of two-step methods for fabricating efficient and stable perovskite solar modules (PSMs). We first discuss the mechanisms of two-step perovskite conversion and advanced engineering approaches to modulate the perovskite formation process. We survey the progress of efficient PSCs prepared by different two-step methods and compare the advantages and disadvantages of each method for scalable production of PSMs. Particularly, we highlight that the vapor-based two-step methods are promising for high-throughput in-line production of PSMs. Finally, we provide insights into the challenges and outlook of the industrialization of two-step processes for producing PSMs.

14 SOLAR ENERGY↗

Spectral Effects on the Energy Harvesting Efficiency of Two- and Four-Terminal Tandem Photovoltaics

In this work, the effect of a varying spectral irradiance and top cell bandgap on the energy harvesting efficiency of two-terminal (2T) and four-terminal (4T) perovskite//silicon tandem solar cells under outdoor operating conditions is investigated. For the comparison, an optoelectronic model employing a 1 year outdoor data set for a 4T mechanical stacked gallium arsenide (GaAs) on crystalline silicon (Si) tandem device is first validated. Then, the verified model is used to simulate perovskite//silicon tandem devices with a varying perovskite top cell bandgap for a location in Golden, Colorado, USA. Here, a spectral binning method to efficiently reduce and improve the visualization of the 1 min-resolved environmental data while maintaining the simulation accuracy is introduced. The findings reveal that, for a device that is current matched under standard testing conditions, the annual spectral deviation reduces the energy harvesting efficiency by only 2% rel . When additional realistic losses for the 4T are taken into account, 2T devices are shown to have an energy-harvesting efficiency that is at parity or higher. Deviations in the top cell bandgap are more than 0.1 eV from current matching result in a reduced energy harvesting efficiency of more than 5% rel for the 2T tandem device.

14 SOLAR ENERGY↗

Measurement of Contact Resistivity In Symmetric Polycrystalline Si/SiO x /Monocrystalline Si Test Structures Using Variable Light Illumination

While different methods exist to determine the contact resistivity in semiconductor devices, these methods are limited to measurement of the majority carrier contacts. The measurement of p‐ or n‐type contacts on n‐ or p‐type crystalline silicon, respectively, is challenging due to the blocking diode formed by the p–n junction. In this article, we address this problem for tunneling oxide passivating contacts used in high‐efficiency Si solar cells. We propose a universal method to extract contact resistivity on symmetric test structures with polycrystalline silicon on SiO x (poly‐Si/SiO x ) passivating contacts under illumination, both for p–n and high–low‐junction passivated contacts. In this method, we demonstrate that the total contact resistance of each cell grid finger to the base wafer is governed by its effective contact area, defined by the transfer length extending from both sides of the finger. Therefore, the grid contact resistance of a poly‐Si contact depends on the ratio of the doped poly‐Si sheet resistance to the tunneling contact resistivity.

14 SOLAR ENERGY↗

Clean Energy Manufacturing: Renewable Energy Technology Benchmarks

The manufacturing of clean energy technologies has become a global enterprise. An analysis of four clean energy technology manufacturing processes—wind turbine components, crystalline silicon solar photovoltaic modules, light-duty vehicle lithium-ion battery cells, and light-emitting diodes—was conducted to provide a reference point for comparison over time as this sector evolves. The manufacturing supply chain analysis included processing of raw materials, making required subcomponents, and assembling final products, using benchmarks that crossed 12 economies: Brazil, Canada, China, Germany, India, Japan, Malaysia, Mexico, South Korea, Republic of China (Taiwan), the United Kingdom, and the United States. Larger economies, with extensive manufacturing supply chains and high prevailing wages, tend to retain more value added from clean energy manufacturing than small economies. Manufacturing of clean energy technologies drives extensive trade among economies to support the widely distributed supply chain links. Production of wind turbine components and photovoltaic modules is more centralized than production of light-emitting diodes and lithium-ion battery cells. Across the four clean energy technologies evaluated, there was generally an excess of manufacturing capacity relative to global supply.

benchmarks↗

Enabling bifacial thin film devices by developing a back surface field using Cu x AlO y

Bifacial solar cells have the potential to increase the energy yield per unit area over traditional monofacial devices without significant added cost, driving $/kWh costs lower and accelerating the adoption of solar photovoltaics. However, the performance of bifacial thin film solar cells significantly lags that achieved by crystalline silicon cells. Here we incorporate wide bandgap Cu x AlO y as a back buffer layer for CdTe devices and achieve a backside illuminated device with high current density and high fill factor. Moreover, these values remain nearly constant even as the absorber layer thickness changes, indicating that a fully-depleted device is not required for efficient charge collection. We show that this response is indicative of a back surface field, albeit with a persistent high back surface recombination velocity. By managing electron reflection, we achieved a backside illumination conversion efficiency of 7.1% and bifaciality of 0.55 for a 3.3 µm CdTe device and 8.0% and 0.62 for a 2 µm device. Future improvements can be made by identifying and incorporating a passivation material that reduces the back surface recombination velocity.

36 MATERIALS SCIENCE↗

Impact of duration and missing data on the long-term photovoltaic degradation rate estimation

Accurate quantification of photovoltaic (PV) system degradation rate (R D ) is essential for lifetime yield predictions. Although R D is a critical parameter, its estimation lacks a standardized methodology that can be applied on outdoor field data. The purpose of this paper is to investigate the impact of time period duration and missing data on R D by analyzing the performance of different techniques applied to synthetic PV system data at different linear R D patterns and known noise conditions. The analysis includes the application of different techniques to a 10-year synthetic dataset of a crystalline Silicon PV system, with emulated degradation levels and imputed missing data. Here, the analysis demonstrated that the accuracy of ordinary least squares (OLS), year-on-year (YOY), autoregressive integrated moving average (ARIMA) and robust principal component analysis (RPCA) techniques is affected by the evaluation duration with all techniques converging to lower R D deviations over the 10-year evaluation, apart from RPCA at high degradation levels. Moreover, the estimated R D is strongly affected by the amount of missing data. Filtering out the corrupted data yielded more accurate R D results for all techniques. It is proven that the application of a change-point detection stage is necessary and guidelines for accurate R D estimation are provided.

14 SOLAR ENERGY↗

Comparative study on the overall energy performance between photovoltaic and Low-E insulated glass units

In this report a novel semi-transparent building integrated photovoltaic (BIPV) laminate was developed and introduced in this paper. It was produced by cutting standard mono-crystalline silicon solar cells into small strips and then making electrical connections between each strip before laminating the cells between two layers of glass. The overall energy performance and energy saving potential of the BIPV insulated glass unit (IGU) under real world conditions were identified through a side by side comparative study. Compared to the reference IGU, the BIPV IGU had lower solar heat gain coefficient (SHGC) but much higher U-factor. The average HVAC electricity saving of the BIPV IGU was about 10% relative to the reference IGU. Daylighting measurement and analysis were carried out to evaluate the trade-offs associated with the BIPV IGU between daylight, glare, and lighting energy use. The results indicated that the BIPV IGU is better than the reference IGU in reducing discomfort glare. However, if the most conservative viewpoint near the window is used for the assessment, a lower transmittance BIPV IGU is required to bring the overall discomfort levels below the perceptible level. Lastly, the net energy saving potential associated with the novel BIPV IGU was identified based on the power, thermal and daylighting performance. On average, the BIPV IGU saved 16.8% of the total electricity use of the room. Further studies and improvement on the energy conversion efficiency of solar cells, the optimal transmittance as well as the thermal properties would make this technology more energy-efficient and affordable.

14 SOLAR ENERGY↗

Hotspot testing of glass/backsheet and glass/glass PV modules pre-stressed in extended thermal cycling

This paper investigates the effect of hotspot (HS) stress endurance of two of the latest designs of monocrystalline modules: a half-cell glass/backsheet (G/B) module and a full-cell glass/glass (G/G) module. These modules have already been pre-stressed in extended thermal cycling with 600 cycles per the IEC 61215 standard to represent field-stressed modules. This study differs from the other conventional studies wherein only fresh modules are subjected to hotspot endurance stress. The G/G module reached a maximum temperature of approximately 200 °C at a cell shading of 25 %, 55 °C higher than the maximum hotspot temperature of 145 °C in the G/B module. A significant burn mark, without glass shattering, was observed in the hotspot-stressed cell of the G/G module due to the current mismatch induced by partial shading. Most of the cells in the G/G module appear to be severely damaged (severe dark areas), as observed in the electroluminescence (EL) image, while the dark regions were rarely present in the G/B module. The EL image also illustrates multiple cell cracks that resist current flow and eventually contribute to the full-cell module degradation. About 8.3 % degradation in maximum power was observed for the G/G module and 1.3 % for the G/B module after the sequential stress tests. The lower degradation in the G/B module can potentially be attributed to its design, which comprises of two parallel strings, each having 72-half-cells and benefits from lower heat dissipation. Furthermore, this indicates that the half-cell design could potentially minimize the hotspot degradation and failures in crystalline-silicon modules.

14 SOLAR ENERGY↗

Understanding interfacial chemistry of positive bias high-voltage degradation in photovoltaic modules

Photovoltaic module degradation from a high system voltage is a prevalent degradation mode in the field, where the enabling degradation mechanisms are inherently dependent on the voltage bias polarity of the installed system. In this study, the effects of positive bias on module performance are confirmed and the underlying chemical degradation processes are more thoroughly investigated to reveal different degradation pathways from those previously reported in negative bias studies. When cells are under +1000 V stress, crystalline silicon mini-modules with poly(ethylene-co-vinyl acetate) (EVA) encapsulant demonstrated a significant photocurrent loss due to EVA discoloration and delamination from increased chemical reactivity at the front-side EVA/cell metallization interface. Brown discoloration of the EVA encapsulant near the cell gridlines is linked to an electrochemical reaction at the Ag gridlines under hot and humid conditions (85 °C, 85% relative humidity). Chemical compositional analysis using X-ray photoelectron spectroscopy (XPS) confirmed that the discoloration is attributed to the formation of silver sulfide (Ag 2 S) and/or silver oxide (Ag 2 O) species at the EVA/Ag gridline interface. The subsequent migration of Ag ions from the cell gridlines into the bulk of the EVA was evident from XPS depth profiling and optical microscopy. However, the Ag signal was not detected at the EVA/glass interface, inferring limited ionic transport through the nominally 0.45 mm thick encapsulant. For the samples studied herein, the sulfur is believed by the process of elimination to come from the ambient air, diffusing into the module through the permeable polymer backsheet.

14 SOLAR ENERGY↗

Beating absorption in solid-state high harmonics

Since the new millennium coherent extreme ultra-violet and soft x-ray radiation has revolutionized the understanding of dynamical physical, chemical and biological systems at the electron’s natural timescale. Unfortunately, coherent laser-based upconversion of infrared photons to vacuum-ultraviolet and soft x-ray high-order harmonics in gaseous, liquid and solid targets is notoriously inefficient. In dense nonlinear media, the limiting factor is strong re-absorption of the generated high-energy photons. Here we overcome this limitation by generating high-order harmonics from a periodic array of thin one-dimensional crystalline silicon ridge waveguides. Adding vacuum gaps between the ridges avoids the high absorption loss of the bulk and results in a ~ 100-fold increase of the extraction depth. As the grating period is varied, each high harmonic shows a different and marked modulation, indicating their waveguiding in the vacuum slots with reduced absorption. Looking ahead, our results enable bright on-chip coherent short-wavelength sources and may extend the usable spectral range of traditional nonlinear crystals to their absorption windows. Potential applications include on-chip chemically-sensitive spectro-nanoscopy.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗