Search NASA⌕ Search

SEARCH · Search NASA

Results for “defect”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Influence of point defect accumulation on in-pile thermal conductivity degradation: Fuel rod defect distribution and deviation between in-pile and post irradiation thermal conductivity

As nuclear fuel burn-up increases, its thermal conductivity degrades due to the accumulation of defects that lead to increased phonon scattering rates. This results in a rise in the centerline temperature of the fuel rod, whereby heat generation must be decreased to avoid undesired behavior such as fuel melting and extensive fission gas release. Fuel performance codes are utilized to optimize the fuel's operational conditions; while they are based on established physical principles, their empirical nature limits their predictive capabilities. Recently, an effort has been made to develop predictive fuel performance codes for commonly used nuclear fuels, as well as accelerated qualification of advanced nuclear fuels. In this report, we elaborate on the importance of careful analysis of point defects’ impact on thermal conductivity in fuel performance analysis. Further, a model is presented where point defect concentration is estimated based on Rate Theory modeling and used as input to the Klemens-Callaway model to calculate their contribution to the degradation of thermal conductivity in UO 2 under prototypical irradiation conditions. This analysis suggests that point defect concentration is significant at the rim of the fuel pellet and neglecting this leads to underestimation of the centerline temperature, which may have consequences on fission gas behavior.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2021

Unusual Role of Point Defects in Perovskite Nickelate Electrocatalysts

Low-cost transition-metal oxide is regarded as a promising electrocatalyst family for an oxygen evolution reaction (OER). The classic design principle for an oxide electrocatalyst believes that point defect engineering, such as oxygen vacancies (VO .. ) or heteroatom doping, offers the opportunities to manipulate the electronic structure of material toward optimal OER activity. Oppositely, in this work, we discover a counterintuitive phenomenon that both VO .. and an aliovalent dopant (i.e., proton (H + )) in perovskite nickelate (i.e., NdNiO 3 (NNO)) have a considerably detrimental effect on intrinsic OER performance. Detailed characterizations unveil that the introduction of these point defects leads to a decrease in the oxidative state of Ni and weakens Ni-O orbital hybridization, which triggers the local electron-electron correlation and a more insulating state. Evidenced by first-principles calculation using the density functional theory (DFT) method, the OER on nickelate electrocatalysts follows the lattice oxygen mechanism (LOM). The incorporation of point defect increases the energy barrier of transformation from OO*(V O ) to OH*(V O ) intermediates, which is regarded as the rate-determining step (RDS). Furthermore, this work offers a new and significant perspective of the role that lattice defects play in the OER process.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Defect Luminescence from Wurtzite CuInS 2 Nanocrystals: Combined Experimental and Theoretical Analysis

CuInS 2 nanocrystals with the wurtzite structure show promise for applications requiring efficient energy transport due to their anisotropic crystal structure. We investigate the source of photoluminescence in the near-infrared spectral region recently observed from these nanocrystals. Spectroscopic studies of both wurtzite CuInS 2 itself and samples alloyed with Cd or Zn allow the assignment of this emission to a radiative point defect within the nanocrystal structure. Further, by varying the organic passivation layer on the material, we are able to determine that the atomic species responsible for nonradiative decay paths on the nanocrystal surface are Cu- or S-based. Density functional theory calculations of defect states within the material allow identification of the likely radiative species. In conclusion, understanding both the electronic structure and optical properties of wurtzite CuInS 2 nanocrystals is necessary for their efficient integration into potential biological, photovoltaic, and photocatalytic applications.

Chemical structure↗
DOE OSTI2024

Defect-Limited Mobility and Defect Thermochemistry in Mixed A-Cation Tin Perovskites: (CH3NH3)1-xCsxSnBr3

Hybrid organic-inorganic semiconductors crystallizing in the perovskite structure present a significant opportunity for realizing defect-tolerant semiconductors. In this work, we examine the solid solution, (CH3NH3)1-xCsxSnBr3, and identify the thermochemistry dictating the intrinsic carrier concentrations and how local structural distortions influences this electronic behavior. This family of compounds exhibits the expected systematic trend in decreasing optical gap with the cesium to methylammonium A-site mixing ratio, x, in the visible region. However, the carrier mobility, as determined from time-resolved microwave conductivity measurements, trends opposite to that expected from first-principles calculations combined with Boltzmann scattering theory calculations of the carrier mobility. We propose that this is a result of increasing carrier scattering with x in (CH3NH3)1-xCsxSnBr3 due to a significant increase in the carrier density with x. By examining the dependence of the carrier density as a function of x, we infer the compositional-dependence of the average enthalpy and nonconfigurational entropy per defect. While diffraction reveals a cubic aristotypic perovskite structure as a function of x at room temperature, the pair distribution functions obtained from synchrotron X-ray total scattering from these materials are better described by symmetry-adapted displacement modes of the Pm3m crystal structure, which we attribute to a large degree of anharmonic dynamics of the atom positions. This analysis shows that CH3NH3+-rich compositions retain mostly linear Sn-Br-Sn bonding environments through the displacements, while Cs+-rich compositions lead to more significantly bent Sn-Br-Sn environments. We propose that these bent bonding arrangements in Cs-rich compositions yield a higher propensity for defect formation. This also provides a rationale for carrier trapping that gives rise to anomalous microwave transients. Together, these results provide insight into the structure-dynamics-properties relationships in this highly anharmonic system with high amplitude atomic motions and low defect formation energies.

defect thermochemistry↗
DOE OSTI2018

A valence balanced rule for discovery of 18-electron half-Heuslers with defects

Using first-principles DFT we systematically investigate the thermodynamic stability and off-stoichiometry in 108 nominal 19-electron half-Heusler (hH) compounds. We demonstrate unambiguously that considering a cation deficiency towards the off-stoichiometric valence balanced, VEC = 18 composition is necessary for explaining the stability of all previously reported nominal VEC = 19 compounds. This is understandable in terms of an energy benefit from valence balance considering the valence of each atom using Zintl chemistry that offsets the energy penalty of forming defects in nearly all cases. Thus, we propose a valence balanced rule to understand the ground state stability of half-Heuslers irrespective of stoichiometry and nominal electron count (8, 18 or 19). Using this generalized rule we (a) predict 16 previously unreported nominal 19-electron XYZ half-Heuslers and (b) rationalize the reports of giant off-stoichiometries in compounds such as Ti (1–x) NiSb which has been known for over 50 years. Of the 16 new compounds predicted here, Ti (1–x) PtSb was synthesized and the half-Heusler phase confirmed through X-ray studies. Here, the flexibility in stoichiometry of the half-Heusler systems to attain a stable valence balanced composition by accommodating large defect concentrations opens up multiple dimensions for discovery of multi-component defective half-Heuslers based on intrinsic and extrinsic defects which compensate for the nominally non-18-electron count of the structure.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

More exact results in the Wilson loop defect CFT: bulk-defect OPE, nonplanar corrections and quantum spectral curve

We perform here exact computations of correlation functions of 1/2-BPS local operators and protected operator insertions on the 1/8-BPS Wilson loop in $\mathcal{N}=4$ SYM. This generalizes the results of our previous paper arXiv:1802.05201, which employs supersymmetric localization, OPE and the Gram-Schmidt process. In particular, we conduct a detailed analysis for the 1/2-BPS circular (or straight) Wilson loop in the planar limit, which defines an interesting nontrivial defect CFT. We compute its bulk-defect structure constants at finite 't Hooft coupling, and present simple integral expressions in terms of the $Q$-functions that appear in the Quantum Spectral Curve---a formalism originally introduced for the computation of the operator spectrum. The results at strong coupling are found to be in precise agreement with the holographic calculation based on perturbation theory around the AdS$_2$ string worldsheet, where they correspond to correlation functions of open string fluctuations and closed string vertex operators inserted on the worldsheet. Along the way, we clarify several aspects of the Gram-Schmidt analysis which were not addressed in the previous paper. Specifically, we clarify the role played by the multi-trace operators at the non-planar level, and confirm its importance by computing the non-planar correction to the defect two-point function. We also provide a formula for the first non-planar correction to the defect correlators in terms of the Quantum Spectral Curve, which suggests the potential applicability of the formalism to the non-planar correlation functions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Density functional studies of defects and defect-related luminescence in M g 3 N 2

M g 3 N 2 is a promising material for light-emitting-diode applications. However, the microscopic origin of the broad yellow photoluminescence in M g 3 N 2 remains unknown. In this study, defect properties and defect-related optical transitions are investigated based on the hybrid functional calculation. Our results show that the nitrogen vacancy introduces multiple localized defect states within the band gap, which play a dominant role in luminescent properties of M g 3 N 2 . Common impurities like hydrogen, oxygen, and carbon and their complexes with native defects are also studied. Compared with isolated V Mg , V Mg -H and V Mg – O N complexes have shallower transition levels. Our calculated optical excitation and emission peaks associated with isolated V N are in good agreement with those observed in experiments. In addition, the impurity C N is also a potential source for the observed yellow emission in M g 3 N 2 .

36 MATERIALS SCIENCE↗
DOE OSTI2025

Novel Solar Panel Defect Detection Hardware and Defect Analysis Software (CRADA Final Report)

The CRADA work involved 1) the development of a machine learning software architecture to automatically detect defects within Electroluminescence images of solar panels, and 2) demonstrations of the usefulness of UV Fluorescence (UVF) defect detection for a wide variety of defect types across many different solar panel technologies with different field or environmental chamber histories.

14 SOLAR ENERGY↗
DOE OSTI2015

Understanding Defect-Stabilized Noncovalent Functionalization of Graphene

The noncovalent functionalization of graphene by small molecule aromatic adsorbates, phenanthrenequinone (PQ), is investigated systematically by combining electrochemical characterization, high-resolution interfacial X-ray scattering, and ab initio density functional theory calculations. The findings in this study reveal that while PQ deposited on pristine graphene is unstable to electrochemical cycling, the prior introduction of defects and oxygen functionality (hydroxyl and epoxide groups) to the basal plane by exposure to atomic radicals (i.e., oxygen plasma) effectively stabilizes its noncovalent functionalization by PQ adsorption. The structure of adsorbed PQ molecules resembles the graphene layer stacking and is further stabilized by hydrogen bonding with terminal hydroxyl groups that form at defect sites within the graphene basal plane. The stabilized PQ/graphene interface demonstrates persistent redox activity associated with proton-coupled-electron-transfer reactions. The resultant PQ adsorbed structure is essentially independent of electrochemical potentials. These results highlight a facile approach to enhance functionalities of the otherwise chemically inert graphene using noncovalent interactions.

Functionalization↗
DOE OSTI2018

Enhancing the photoresponse and photocatalytic properties of TiO 2 by controllably tuning defects across {101} facets

Introducing defects into semiconductors with well-controlled exposed facets offers an effective route for the development of photocatalytic materials with greatly improved properties. Here, we report a facile ethylene glycol reduction procedure to make anatase titanium dioxide (TiO 2 ) with different concentrations of exposed {001} and {101} facets, leading to different surficial defects. TiO 2 with increased concentrations of {101} facets shows a 5-fold improvement in photocurrent generation as well as improved photocatalytic activity towards water splitting under visible light irradiation. Thus, the improved activity is ascribed to the oxygen vacancies as well as the variable surface chemical states, which collectively induce a slower recombination rate of photo-induced electron-hole pairs. This work also highlights a feasible strategy to obtain the defective TiO 2 and explore the synergistic effect of surface defects and different concentrations of exposed {001} and {101} facets for photocurrent and photocatalytic properties under visible light irradiation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Influence of Hydrogen Isotopes on Vacancy Formation and Antisite Defect Diffusion in Palladium and Vanadium Metals

Density functional theory calculations are performed to study the interaction between hydrogen isotopes, vacancy, and antisite defects in Pd and V. Various defect configurations and defect-defect distances are systematically explored. Binding energies and migration energy barriers are calculated and tabulated. The study provides atomistic data for subsequent mesoscale simulations of tritium, vacancy, and antisite diffusion. In Pd, a strong binding is found between a vacancy and tritium (0.16 eV). This tritium binding increases the thermal concentration of vacancies by a factor of ~10 at 500 ?C. The increase in vacancy concentration enhances V antisite diffusion in Pd by a factor of ~6 at 500 ?C. The influence of tritium is even stronger in V, with a tritium and vacancy binding energy of 0.38 eV. Such a strong binding increases the thermal concentration of vacancies by a factor of ~300 at 500 ?C. The increase in vacancy concentration enhances Pd antisite diffusion in V by a factor of ~640 at 500 ?C. Vanadium and Pd exhibit a strong driving force to intermix with a formation energy of -1.57 eV for V antisite in Pd and -1.05 eV for Pd antisite in V. The results suggest vanadium diffusion into Pd is energetically stronger than the reverse. Zero-point-energy corrections are taken into account and calculations for hydrogen and tritium are presented.

Setyawan, Wahyu↗
DOE OSTI2020

Real-Time Defect Correction in Large-Scale Polymer Additive Manufacturing via Thermal Imaging and Laser Profilometer

Defects can result in a failed part and are costly in terms of time and material. This cost is even greater in the context of large-scale additive manufacturing where the objects can be very large. As a result, a great deal of research has focused on defect identification and mitigation. To address defects during object construction, researchers at Oak Ridge National Laboratory’s Manufacturing Demonstration Facility investigated an in-situ control system comprised of two sensors: a thermal camera and laser profilometer. This control system adjusted material flow and build speed to mitigate three types of defects: low layer times, underfill, and overfill. Several test objects were constructed. The control system was found to adjust build parameters to handle low layer times of approximately 15 seconds and height deviations from -100% underfill (the absence of a layer) to 50% overfill. Within two layers, height deviations could be returned to within 10% of the expected layer height. Further, preliminary results suggest the system can compensate for uneven build surfaces.

Borish, Michael↗
DOE OSTI2018

Aqueous Synthesis of Concave Rh Nanotetrahedra with Defect-Rich Surfaces: Insights into Growth-, Defect-, and Plasmon-Enhanced Catalytic Energy Conversion

The control of morphology in the synthesis of Rh nanocrystals can be used to precisely tailor the electronic surface structure; this in turn directly influences their performance in catalysis applications. Many works have brought attention to the development of Rh nanostructures with low-index surfaces, but limited effort has been devoted to the study of high-index and surface defect-enriched nanocrystals as they are not favored by thermodynamics because of the involvement of high-energy surfaces and increased surface-to-volume ratios. Here, we demonstrate an aqueous synthesis of concave Rh nanotetrahedra (CTDs) serving as efficient catalysts for energy conversion reactions. CTDs are surface defect-rich structures that form through a slow growth rate and follow the four-step model of metallic nanoparticle growth. Via the tuning of the surfactant concentration, the morphology of Rh CTDs evolved into highly excavated nanotetrahedra (HETDs) and twinned nanoparticles (TWs). Unlike the CTD surfaces with abundant adatoms and vacancies, HETDs and TWs have more regular surfaces with layered terraces. Each nanocrystal type was evaluated for methanol electrooxidation and hydrogen evolution from hydrolysis of ammonia borane, and the CTDs significantly showed the best catalytic performance because of defect enrichment, which benefits the surface reactivity of adsorbates. In addition, both CTDs and HETDs have strong absorption near the visible light region (382 and 396 nm), for which they show plasmon-enhanced performance in photocatalytic hydrogen evolution under visible light illumination. CTDs are more photoactive than HETDs, likely because of more pronounced localized surface plasmon resonance hot spots. Lastly, this facile aqueous synthesis of large-surface-area, defect-rich Rh nanotetrahedra is exciting for the fields of nanosynthesis and catalysis.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Tuning Li-Ion Diffusion in α-LiMn 1– x Fe x PO 4 Nanocrystals by Antisite Defects and Embedded β-Phase for Advanced Li-Ion Batteries

Olivine-structured LiMn1-xFexPO4 has become a promising candidate for cathode materials owing to its higher working voltage of 4.1 V and thus larger energy density than that of LiFePO4, which has been used for electric vehicles batteries with the advantage of high safety but disadvantage of low energy density due to its lower working voltage of 3.4 V. One drawback of LiMn1-xFexPO4 electrode is its relatively low electronic and Li-ionic conductivity with Li-ion one-dimensional diffusion. Herein, olivine-structured α-LiMn0.5Fe0.5PO4 nanocrystals were synthesized with optimized Li-ion diffusion channels in LiMn1-xFexPO4 nanocrystals by inducing high concentrations of Fe2+-Li+ antisite defects, which showed impressive capacity improvements of approaching 162, 127, 73, and 55 mAh g-1 at 0.1, 10, 50, and 100 C, respectively, and a long-term cycling stability of maintaining about 74% capacity after 1000 cycles at 10 C. By using high-resolution transmission electron microscopy imaging and joint refinement of hard X-ray and neutron powder diffraction patterns, we revealed that the extraordinary high-rate performance could be achieved by suppressing the formation of electrochemically inactive phase (β-LiMn1-xFexPO4, which is first reported in this work) embedded in α-LiMn0.5Fe0.5PO4. Because of the coherent orientation relationship between β- and α- phases, the β-phase embedded would impede the Li+ diffusion along the [100] and/or [001] directions that was activated by the high density of Fe2+-Li+ antisite (4.24%) in α-phase. Thus, by optimizing concentrations of Fe2+-Li+ antisite defects and suppressing β-phase-embedded olivine structure, Li-ion diffusion properties in LiMn1-xFexPO4 nanocrystals can be tuned by generating new Li+ tunneling. These findings may provide insights into the design and generation of other advanced electrode materials with improved rate performance.

25 ENERGY STORAGE↗
DOE OSTI2018

α-Particle Detection and Charge Transport Characteristics in the A 3 M 2 I 9 Defect Perovskites (A = Cs, Rb; M = Bi, Sb)

Here, we have investigated the defect perovskites A 3 M 2 I 9 (A = Cs, Rb; M = Bi, Sb) as materials for radiation detection. The phase purity of Bridgman-grown A 3 M 2 I 9 single crystals was confirmed via high-resolution synchrotron X-ray diffraction, while density functional theory calculations (DFT) show surprisingly dispersive bands in the out-of-plane direction for these layered materials, with low effective masses for both holes and electrons. Accordingly, each of the four A 3 M 2 I 9 defect perovskites showed response to 241 Am α-particle irradiation for hole and electron electrode configurations, a remarkable ambipolar response that resembles the 3D halide perovskites. The electron response spectra were used to estimate the mobility–lifetime product (μτ) e for electrons in these materials, with Rb 3 Bi 2 I 9 showing the lowest (μτ) e value of 1.7 × 10 – 6 cm 2 V –1 and Cs 3 Bi 2 I 9 the highest (μτ) e of 5.4 × 10 –5 cm 2 V –1 . The rise time of the α-particle-generated pulse was used to estimate the electron mobility μ e of the A 3 M 2 I 9 defect perovskites, which ranged from 0.32 cm 2 V –1 s–1 for Rb 3 Sb 2 I 9 to 4.3 cm 2 V –1 s –1 in Cs 3 Bi 2 I 9 . Similar analysis of the hole response spectra yielded (μτ) h values for each A 3 M 2 I 9 compound, with Cs 3 Bi 2 I 9 again showing the highest (μτ) h value of 1.8 × 10 –5 cm 2 V –1 , while Rb 3 Bi 2 I 9 showed the lowest (μτ) h with 2.0 × 10 –6 cm 2 V –1 . Rise time analysis gave hole mobilities ranging from 1.7 cm 2 V –1 s –1 for Cs 3 Bi 2 I 9 to 0.14 cm 2 V –1 s –1 for Cs 3 Sb 2 I 9 . Comparing the experimental electron and hole mobilities to the effective masses obtained from DFT calculations revealed sizable discrepancies, possibly indicating self-trapping of charge carriers due to electron–phonon interactions. The α-particle response of the A 3 M 2 I 9 defect perovskites demonstrates their potential as semiconductor radiation detectors, with Cs 3 Bi 2 I 9 and Cs 3 Sb 2 I 9 showing the most promise.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Native defects and impurity band behavior in half-Heusler thermoelectric NbFeSb

To investigate the electronic behavior and magnetic properties of NbFeSb, we have performed 93 Nb NMR, specific heat and magnetic measurements on NbFeSb samples heat treated at high temperatures. In this work, magnetic measurements combined with an observed Schottky anomaly and changes in the NMR line width indicate the presence of a 0.2% concentrated native magnetic defect in stoichiometric NbFeSb samples. The origin of these native defects is believed to be due to Fe antisites on Nb sites. In addition, NMR shift and spin–lattice relaxation results below 200 K reveal a Korringa-like response indicating heavily-doped p-type behavior due to native defects. Above 280 K, this converts to an activated behavior, indicating the presence of an impurity band, empty at low temperatures, which is located around 0.03 eV above the valence band maximum.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗