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At least 91 records · Page 5

A Screening Method Using Pulsed-Power Combined with Infrared Imaging to Detect Pattern Defects in Bulk Metal Foil or Thin Film Resistors

Bulk metal foil and thin film resistors occasionally contain localized defects within the etched resistor pattern. Common defects of this type include in-line constrictions referred to as notches, unremoved resistor material bridges between adjacent pattern lines, and embedded non-conductive particles in the resistor material. Such defects are prone to fracture due to thermomechanical fatigue during powered operation, especially power cycling, resulting in positive resistance change and open circuit failure modes. Common screening methods of optical microscopy, short time overload power tests (e.g., 6.25x rated power for 5 seconds) and burn-in (e.g., 1.5x rated power for 100 hours) are useful, but they are not always effective at removing devices with such defects. An improved method has been developed to screen for localized resistor pattern defects. The method involves the application of brief, high power electrical pulses at a low duty cycle while inspecting the resistor with a high resolution, high speed infrared camera. The following test conditions were found to be suitable for this purpose: 6.25x rated power, 1 to 5 pulses, 50 ms pulse width and 10% duty cycle. During the power pulsing, localized constrictions in the resistor pattern are identifiable as hot spots via the infrared camera. Reject criteria can be established based on observations of hot spots. To assess its effectiveness, a total of two hundred eighty (280) surface mount foil resistors (40 each from 7 different lots) were screened using this infrared technique. The screening identified twenty-nine (29) resistors with significant hot spots in the resistor pattern. All 280 resistors were then subjected to an industry standard 10,000 hour life test at 1x rated power at 70°C with power cycled for 90 minutes on and 30 minutes off. During life testing, three resistors exhibited positive resistance change failure mode. All three failures were due to thermomechanical fatigue failure of localized bridge defects at the locations identified via infrared screening. The results of this evaluation illustrate the benefits of the pulsed-power infrared detection screening technique to identify reliability suspect foil or thin film resistors that may escape common screening methods.

screening↗

A Screening Method Using Pulsed-Power Combined with Infrared Imaging to Detect Pattern Defects in Bulk Metal Foil or Thin Film Resistors

Bulk metal foil and thin film resistors occasionally contain localized defects within the etched resistor pattern. Common defects of this type include in-line constrictions referred to as notches, unremoved resistor material bridges between adjacent pattern lines, and embedded non-conductive particles in the resistor material. Such defects are prone to fracture due to thermomechanical fatigue during powered operation, especially power cycling, resulting in positive resistance change and open circuit failure modes. Common screening methods of optical microscopy, short time overload power tests (e.g., 6.25x rated power for 5 seconds) and burn-in (e.g., 1.5x rated power for 100 hours) are useful, but they are not always effective at removing devices with such defects. An improved method has been developed to screen for localized resistor pattern defects. The method involves the application of brief, high power electrical pulses at a low duty cycle while inspecting the resistor with a high resolution, high speed infrared camera. The following test conditions were found to be suitable for this purpose: 6.25x rated power, 1 to 5 pulses, 50 ms pulse width and 10% duty cycle. During the power pulsing, localized constrictions in the resistor pattern are identifiable as hot spots via the infrared camera. Reject criteria can be established based on observations of hot spots. To assess its effectiveness, a total of two hundred eighty (280) surface mount foil resistors (40 each from 7 different lots) were screened using this infrared technique. The screening identified twenty-nine (29) resistors with significant hot spots in the resistor pattern. All 280 resistors were then subjected to an industry standard 10,000 hour life test at 1x rated power at 70°C with power cycled for 90 minutes on and 30 minutes off. During life testing, three resistors exhibited positive resistance change failure mode. All three failures were due to thermomechanical fatigue failure of localized bridge defects at the locations identified via infrared screening. The results of this evaluation illustrate the benefits of the pulsed-power infrared detection screening technique to identify reliability suspect foil or thin film resistors that may escape common screening methods.

screening↗

Assurance Equations: A Cost and Criticality Model for Optimizing Quality Assurance Surveillance

The cost of quality vs cost of failure correction has been a long-running topic of discussion within the Aerospace community. It leads directly to concepts of “risk tolerance”, and risk-based decision-making. It would be valuable if there was a way to compute the optimal investment in customer-executed quality assurance activities using defect significance with respect to performance objectives, the activities’ defect detection effectiveness, and the cost-penalty for late discovery of impactful defects. This optimization is particularly of interest to projects whose budget constraints significantly limit their risk management options.The cost to fix defects (i.e., failure correction) escalates as the project matures. There have been studies attempting to determine the relative cost of fixing defects discovered during various phases of a project life cycle with important implications, all of which suggest growth factors are large. The commonly referred to 1:10:100 rule represents a cost multiplier for repair/rework across the Design to Fab to Test hardware development phases. Cost premiums for QA activities also accumulate when they are treated as mandatory (due to schedule drag) or are performed later than their assigned phase.This paper describes the modeling of development phase -dependencies in the conduct of typical customer-executed quality assurance activities. Our initial modeling encompasses:• Distinct phases of the production lifecycle• Multiple kinds of Defects, each with some a-priori likelihood of being present• Each defect’s impact on performance Objectives for a type of hardware• The cost and efficacy of assurance techniques at detecting such Defects• The costs of fixing those Defects detected in a given phase of the production lifecycleThe model captures assurance activities’ abilities to Detect defects. Upon detection it is assumed that the Defect is immediately fixed. Defects that “escape” detection by some activity may thereafter be detected by a later activity, but by then the cost of fixing the Defect may have escalated. Defects are related to the performance Objectives they would detract from, were those Defects to remain present in the operating system.We have constructed and are exploring, a model that relates the importance of hardware system elements to mission objectives, the impact of types of Defects on those hardware types, the cost of customer-executed assurance activities (i.e., supplier controls) and their effectiveness towards reducing an impactful quality escape, and the cost of Defect correction across production phase. We describe the approach taken to select the key model aspects, why they are relevant to our NASA mission, and our efforts to populate it with relevant and contemporary data. We use a notional example to illustrate model design and function.

Plante, Jeannette↗

Forecasting of high voltage insulation performance: Testing of recommended potting materials and of capacitors

Nondestructive high voltage test techniques (mostly electrical methods) are studied to prevent total or catastrophic breakdown of insulation systems under applied high voltage in space. Emphasis is on the phenomenon of partial breakdown or partial discharge (P.D.) as a symptom of insulation quality, notably partial discharge testing under D.C. applied voltage. Many of the electronic parts and high voltage instruments in space experience D.C. applied stress in service, and application of A.C. voltage to any portion thereof would be prohibited. Suggestions include: investigation of the ramp test method for D.C. partial discharge measurements; testing of actual flight-type insulation specimen; perfect plotting resin samples with controlled defects for test; several types of plotting resins and recommendations of the better ones from the electrical characteristics; thermal and elastic properties are also considered; testing of commercial capaciters; and approximate acceptance/rejection/rerating criteria for sample test elements for space use, based on D.C. partial discharge.

Bever, R. S.↗

Silicon Carbide Epitaxial Films Studied by Atomic Force Microscopy

Silicon carbide (SiC) holds great potential as an electronic material because of its wide band gap energy, high breakdown electric field, thermal stability, and resistance to radiation damage. Possible aerospace applications of high-temperature, high-power, or high-radiation SiC electronic devices include sensors, control electronics, and power electronics that can operate at temperatures up to 600 C and beyond. Commercially available SiC devices now include blue light-emitting diodes (LED's) and high-voltage diodes for operation up to 350 C, with other devices under development. At present, morphological defects in epitaxially grown SiC films limit their use in device applications. Research geared toward reducing the number of structural inhomogeneities can benefit from an understanding of the type and nature of problems that cause defects. The Atomic Force Microscope (AFM) has proven to be a useful tool in characterizing defects present on the surface of SiC epitaxial films. The in-house High-Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research Center not only extended the dopant concentration range achievable in epitaxial SiC films, but it reduced the concentration of some types of defects. Advanced structural characterization using the AFM was warranted to identify the type and structure of the remaining film defects and morphological inhomogeneities. The AFM can give quantitative information on surface topography down to molecular scales. Acquired, in part, in support of the Advanced High Temperature Engine Materials Technology Program (HITEMP), the AFM had been used previously to detect partial fiber debonding in composite material cross sections. Atomic force microscopy examination of epitaxial SiC film surfaces revealed molecular-scale details of some unwanted surface features. Growth pits propagating from defects in the substrate, and hillocks due, presumably, to existing screw dislocations in the substrates, were imaged. Away from local defects, step bunching was observed to yield step heights of hundreds of angstroms, with possible implications for the uniformity of dopants incorporated in SiC devices during fabrication. The quantitative topographic data from the AFM allow the relevant defect information to be extracted, such as the size and distribution of step bunching and the Burgers vector of screw dislocations. These atomic force microscopy results have furthered the understanding of the dynamic epitaxial SiC growth process. A model describing the observed hillock step bunching has been proposed. This cooperation between researchers involved in crystal growth, electronic device fabrication, and surface structural characterization is likely to continue as atomic force microscopy is used to improve SiC films for high-temperature electronic devices for NASA's advanced turbine engines and space power devices, as well as for future applications in the automotive industry.

Source record↗

Evaluation of flawed composite structure under static and cyclic loading

This paper presents the results of a program investigating the effects of initial defects on the fatigue and fracture response of composite laminates. The structural laminates investigated were a typical angle-ply laminate, a polar/hoop-wound pressure vessel laminate, and a typical engine fan blade laminate. Defects investigated were full- and half-penetration circular holes, full- and half-penetration slits, and countersink holes. Results are presented showing the effects of the defect size and type on the static fracture strength, fatigue performance, and residual static strength. The results of inspection procedures are shown, describing the effect of cyclic and static loadings on damage propagation in composite laminates. The data in this study were used to define proof test levels as a qualification procedure in composite structure subjected to cyclic loading.

Porter, T. R.↗

Evaluation of flawed composite structural components under static and cyclic loading

The effects of initial defects on the fatigue and fracture response of graphite-epoxy composite laminates are presented. The structural laminates investigated were a typical angle ply laminate, a polar/hoop wound pressure vessel laminate, and a typical engine fan blade laminate. Defects investigated were full and half penetration circular holes, full and half penetration slits, and countersink holes. The effects of the defect size and type on the static fracture strength, fatigue performance, and residual static strength are shown as well as the results of loadings on damage propagation in composite laminates. The data obtained were used to define proof test levels as a qualification procedure in composite structure subjected to cyclic loading.

Porter, T. R.↗

Compression and compression fatigue testing of composite laminates

The effects of moisture and temperature on the fatigue and fracture response of composite laminates under compression loads were investigated. The structural laminates studied were an intermediate stiffness graphite-epoxy composite (a typical angle ply laimna liminate had a typical fan blade laminate). Full and half penetration slits and impact delaminations were the defects examined. Results are presented which show the effects of moisture on the fracture and fatigue strength at room temperature, 394 K (250 F), and 422 K (300 F). Static tests results show the effects of defect size and type on the compression-fracture strength under moisture and thermal environments. The cyclic tests results compare the fatigue lives and residual compression strength under compression only and under tension-compression fatigue loading.

Porter, T. R.↗

Formation and Migration Energies of Interstitials in Silicon Under Strain Conditions

Simulation calculations are conducted for Si substrates to analyze formation and diffusion energies of interstitials under strain condition using statics methods .based on a Stillinger-Weber type potential function. Defects in the vicinity of the surface region and in the bulk are examined, and the role played by compressive and tensile strains on the energetics of interstitials is investigated. Results indicate that strain alters defect energetics which, in turn, modifies their diffusion characteristics.

Halicioglu, Timur↗

The Evolution of Nondestructive Evaluation Methods for the Space Shuttle External Tank Thermal Protection System

Three nondestructive evaluation methods are being developed to identify defects in the foam thermal protection system (TPS) of the Space Shuttle External Tank (ET). Shearography is being developed to identify shallow delaminations, shallow voids and crush damage in the foam while terahertz imaging and backscatter radiography are being developed to identify voids and cracks in thick foam regions. The basic theory of operation along with factors affecting the results of these methods will be described. Also, the evolution of these methods from lab tools to implementation on the ET will be discussed. Results from both test panels and flight tank inspections will be provided to show the range in defect sizes and types that can be readily detected.

Walker, James L.↗

NDE Methods for the External Tank Spray on Foam Insulation

The foam thermal protection system (TPS) of the space shuttle External Tank (ET) has provided some unique challenges to the nondestructive testing community. Three nondestructive evaluation methods have been developed to identify defects in the foam TPS of the ET. Terahertz imaging and backscatter radiography have been developed to identify voids in thick foam regions while shearography has been developed to identify shallow delaminations, shallow voids and crush damage in the foam. The basic theory of operation along with factors, determined from a series of designed experiments, affecting the results of these methods will be described. Results from both test panels and flight tank inspections will be provided, along with predicted probability of detection estimates to show the range in defect sizes and types that can be readily detected.

Walker, James L.↗

Biosentinel: Developing a Space Radiation Biosensor

Ionizing radiation presents a major challenge to human exploration and long-term residence in space. The deep-space radiation spectrum includes highly energetic particles that generate double strand breaks (DSBs), deleterious DNA lesions that are usually repaired without errors via homologous recombination (HR), a conserved pathway in all eukaryotes. While progress identifying and characterizing biological radiation effects using Earth-based facilities has been significant, no terrestrial source duplicates the unique space radiation environment.We are developing a biosensor-based nanosatellite to fly aboard NASAs Space Launch System Exploration Mission 1, expected to launch in 2017 and reach a 1AU (astronomic unit) heliocentric orbit. Our biosensor (called BioSentinel) uses the yeast S. cerevisiae to measure DSBs in response to ambient space radiation. The BioSentinel strain contains engineered genetic defects that prevent growth until and unless a radiation-induced DSB near a reporter gene activates the yeasts HR repair mechanisms. Thus, culture growth and metabolic activity directly indicate a successful DSB-and-repair event. In parallel, HR-defective and wild type strains will provide survival data. Desiccated cells will be carried within independent culture microwells, built into 96-well microfluidic cards. Each microwell set will be activated by media addition at different time points over 18 months, and cell growth will be tracked continuously via optical density. One reserve set will be activated only in the occurrence of a solar particle event. Biological measurements will be compared to data provided by onboard physical dosimeters and to Earth-based experiments.BioSentinel will conduct the first study of biological response to space radiation outside Low Earth Orbit in over 40 years. BioSentinel will thus address strategic knowledge gaps related to the biological effects of space radiation and will provide an adaptable platform to perform human-relevant measurements in multiple space environments. We hope that it can therefore be used on the ISS, on and around other planetary bodies as well as other exploration platforms as a self-contained system that will allow us to compare and calibrate different radiation environments.BioSentinels results will be critical for improving interpretation of the effects of space radiation exposure, and for reducing the risk associated with long-term human exploration.

space radiation↗

Formation of Oxides in the Interior of Friction Stir Welds

In friction stir welding (FSWing) the actual solid state joining takes place between the faying surfaces which form the weld seam. Thus the seam trace is often investigated for clues when the strength of the weld is reduced. Aluminum and its alloys are known to form a native, protective oxide on the surface. If these native surface oxides are not sufficiently broken up during the FSW process, they are reported to remain in the FSW interior and weaken the bond strength. This type of weld defect has been referred to as a lazy "S", lazy "Z", joint line defect, kissing bond, or residual oxide defect. Usually these defects are mitigated by modification of the process parameters, such as increased tool rotation rate, which causes a finer breakup of the native oxide particles. This study proposes that there may be an alternative mechanism for formation of oxides found within the weld nugget. As the oxidation rate increases at elevated temperatures above 400ºC, it may be possible for enhanced oxidation to occur on the interior surfaces during the FSW process from entrained air entering the seam gap. Normally, FSWs of aluminum alloys are made without a purge gas and it is unknown how process parameters and initial fit up could affect a potential air path into the interior during the processing. In addition, variations in FSW parameters, such as the tool rotation, are known to have a strong influence on the FSW temperature which may affect the oxidation rate if internal surfaces are exposed to entrained air. A series of FSWs were made in 3 different thickness panels of AA2219 (0.95, 1.27 and 1.56 cm) at 2 different weld pitches. As the thickness of the panels increased, there was an increased tendency for a gap to form in advance of the weld tool. If sufficient air is able to enter the workpiece gap prior to consolidation, the weld temperature can increase the oxidation rate on the interior surfaces. These oxidation rates would also be accelerated in areas of localized liquation. Metallographs from the weld panels showed indications of liquation at the grain boundaries. In FSWs of thicker panels, these regions of liquation were found to be heavily oxidized. The quality of the FSWs was evaluated from tensile testing at room temperature. As the panel thickness increased, a slight decrease in tensile strength was observed which was attributed to the presence of oxides. No oxide formation was observed in the thinner workpieces, although there were indications of localized liquation at the grain boundaries. Results from this study will assist in a better understand of the mechanisms of oxide formation in FSW interiors and provide methodology for minimizing their occurrence.

Schneider, Judy↗

Oxygen and carbon impurities and related defects in silicon

Oxygen and carbon are the predominant impurities in Czochralski-grown silicon. The incorporation of oxygen and carbon during crystal growth is reviewed and device effects are discussed. Methods for controlling oxygen and carbon incorporation during crystal growth are discussed and results supporting a segregation coefficient of k=0.5 for oxygen are presented. The nucleation and precipitation behavior of oxygen is complex. Temperature and doping level effects which add insight into the role of point defects in the nucleation process are highlighted. In general, precipitation is found to be retarded in N+ and P+ silicon. The types and quantities of defects resulting from the oxygen precipitates is of interest as they are technologically useful in the process called intrinsic gettering. A comparison is made between the available defect sites and the quantities of metallic impurities present in a typical wafer which need to be gettered. Finally, a discussion of the denuded-zone, intrinsic-gettered (DZ-IG) structure on device properties is presented.

Pearce, C. W.↗

Thin N-I-P radiation resistant solar cells

Several sets of N-I-P sola cells were fabricated from high resistivity silicon to test the effectiveness of various methods for hardening these devices against radiation. Different substrate materials were used to provide information on the effects of dopant concentration, silicon type, and the presence of oxygen. In some cells, P-type float-zone refined silicon of 800, 8000 and 15,000 omega-cm resistivity was used to provide a basis for studying resistivity and purity effects. In other cells, N-type silicon (approximately 800 omega-cm) was used to allow a comparison of dopant type. Oxygen-rich, crucible-grown, silicon (approximately 100 omega-cm, p-type) will provide information on purity effects and defect gettering. Lithium was introduced into different types of silicon to determine if mobile ions can reduce radiation induced defects in high resistivity material. Thin cells (2 mil) were fabricated to study the effects of cell thickness and carrier injection on radiation damage. The electrical characteristics of the different sets of cells were measured, analyzed, and compared prior to shipment of the cells to NASA/Lewis for irradiation.

Meulenberg, A.↗