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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Thick Layered Semiconductor Devices with Water Top-Gates: High On–Off Ratio Field-Effect Transistors and Aqueous Sensors

Layered semiconductors show promise as channel materials for field-effect transistors (FETs). Usually, such devices incorporate solid back or top gate dielectrics. Here, we explore deionized (DI) water as a solution top-gate for field-effect switching of layered semiconductors including SnS 2 , MoS 2 , and black phosphorus. The DI water gate is easily fabricated, can sustain rapid bias changes, and its efficient coupling to layered materials provides high on–off current ratios, near-ideal subthreshold swing, and enhanced short-channel behavior even for FETs with thick, bulk-like channels, where such control is difficult to realize with conventional back gating. Screening by the high-k solution gate eliminates hysteresis due to surface and interface trap states and substantially enhances the field-effect mobility. The onset of water electrolysis sets the ultimate limit to DI water gating at large negative gate bias. Measurements in this regime show promise for aqueous sensing, demonstrated here by the amperometric detection of glucose in aqueous solution. In conclusion, DI water gating of layered semiconductors can be harnessed in research on novel materials and devices, and it may with further development find broad applications in microelectronics and sensing.

36 MATERIALS SCIENCE↗
DOE OSTI2024

π-Extended Porphyrin–Phthalocyanine Heterojunction Devices Exhibiting High Ammonia Sensitivity with a Remarkable Light Effect

π-Extended porphyrins represent an attractive class of organic compounds because of their unique photophysical, optoelectronic, and physicochemical properties. Herein, cross-conjugated (Ace-PQ-Ni) and linear-conjugated (AM6) porphyrins are used to build double-layer heterojunction devices by combining them with a lutetium bisphthalocyanine complex (LuPc 2 ). The heterojunction effect at the porphyrin–phthalocyanine interface plays a key role in the charge transport properties. Both devices exhibit exceptionally high ammonia sensitivity at room temperature and under ambient relative humidity, with limit of detection values of 156 and 115 ppb for Ace-PQ-Ni/LuPc 2 and AM6/LuPc 2 sensors, respectively. Interestingly, the Ace-PQ-Ni/LuPc 2 and AM6/LuPc 2 sensors display opposite effects upon light illumination. While the former sensors show largely decreased ammonia sensitivity under light illumination, the current variation of the latter under ammonia is remarkably enhanced with a multiplication factor of 13 and a limit of detection (LOD) of 83 ppb. Here, the striking difference in their sensing properties upon light illumination is attributed to their different π-conjugation pathways (cross-conjugation versus linear conjugation).

conductometric transducer↗
DOE OSTI2017

Parallel Reconstruction of Three Dimensional Magnetohydrodynamic Equilibria in Plasma Confinement Devices

Fast, accurate three dimensional reconstructions of plasma equilibria, crucial for physics interpretation of fusion data generated within confinement devices like stellarators/ tokamaks, are computationally very expensive and routinely require days, even weeks, to complete using serial approaches. Here, we present a parallel implementation of the three dimensional plasma reconstruction code, V3FIT. A formal analysis to identify the performance bottlenecks and scalability limits of this new parallel implementation, which combines both task and data parallelism, is presented. The theoretical findings are supported by empirical performance results on several thousands of processor cores of a Cray XC30 supercomputer. Parallel V3FIT is shown to deliver over 40X speedup, enabling fusion scientists to carry out three dimensional plasma equilibrium reconstructions at unprecedented scales in only a few hours (instead of in days/weeks) for the first time.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2017

Modeling DNP3 Traffic Characteristics of Field Devices in SCADA Systems of the Smart Grid

In the generation, transmission, and distribution sectors of the smart grid, intelligence of field devices is realized by programmable logic controllers (PLCs). Many smart-grid subsystems are essentially cyber-physical energy systems (CPES): For instance, the power system process (i.e., the physical part) within a substation is monitored and controlled by a SCADA network with hosts running miscellaneous applications (i.e., the cyber part). To study the interactions between the cyber and physical components of a CPES, several co-simulation platforms have been proposed. However, the network simulators/emulators of these platforms do not include a detailed traffic model that takes into account the impacts of the execution model of PLCs on traffic characteristics. As a result, network traces generated by co-simulation only reveal the impacts of the physical process on the contents of the traffic generated by SCADA hosts, whereas the distinction between PLCs and computing nodes (e.g., a hardened computer running a process visualization application) has been overlooked. To generate realistic network traces using co-simulation for the design and evaluation of applications relying on accurate traffic profiles, it is necessary to establish a traffic model for PLCs. In this work, we propose a parameterized model for PLCs that can be incorporated into existing co-simulation platforms. We focus on the DNP3 subsystem of slave PLCs, which automates the processing of packets from the DNP3 master. To validate our approach, we extract model parameters from both the configuration and network traces of real PLCs. Simulated network traces are generated and compared against those from PLCs. Our evaluation shows that our proposed model captures the essential traffic characteristics of DNP3 slave PLCs, which can be used to extend existing co-simulation platforms and gain further insights into the behaviors of CPES.

29 ENERGY PLANNING, POLICY, AND ECONOMY↗
DOE OSTI2021

CdSexTe1-x/CdTe Devices with Reduced Interface Recombination Through Novel Back Contacts and Group-V Doping

Since excellent carrier lifetimes and front interface electronic quality are now achieved, rear interface recombination can limit V OC in CdSexTe1-x/CdTe solar cells. Several back-contact structures for devices were fabricated using combinations of tellurium, aluminum oxide, amorphous silicon, and indium tin oxide (ITO). Time-resolved photoluminescence was used to characterize such structures. We show increasingly improved interface passivation through the subsequent use of aluminum oxide, amorphous silicon, and ITO. Additionally, we show that arsenic-doped absorbers form a more passive interface with numerous back contact structures.

aluminum oxide↗
DOE OSTI2023

A Novel Spatial-Temporal Variational Quantum Circuit to Enable Deep Learning on NISQ Devices

Quantum computing presents a promising approach for machine learning with its capability for extremely parallel computation in high-dimension through superposition and entanglement. Despite its potential, existing quantum learning algorithms, such as Variational Quantum Circuits (VQCs), face challenges in handling more complex datasets, particularly those that are not linearly separable. What’s more, it encounters the deployability issue, making the learning models suffer a drastic accuracy drop after deploying them to the actual quantum devices. To overcome these limitations, this paper proposes a novel spatial-temporal design, namely “ST-VQC”, to integrate nonlinearity in quantum learning and improve the robustness of the learning model to noise. Specifically, ST-VQC can extract spatial features via a novel block-based encoding quantum sub-circuit coupled with a layer-wise computation quantum sub-circuit to enable temporal-wise deep learning. Additionally, a SWAP-Free physical circuit design is devised to improve robustness. These designs bring a number of hyperparameters. After a systematic analysis of the design space for each design component, an automated optimization framework is proposed to generate the ST-VQC quantum circuit. The proposed ST-VQC has been evaluated on two IBM quantum processors, ibm-cairo with 27 qubits and ibmq-lima with 7 qubits to assess its effectiveness. The results of the evaluation on the standard dataset for binary classification show that ST-VQC can achieve over 30% accuracy improvement compared with existing VQCs on actual quantum computers. Moreover, on a non-linear synthetic dataset, the STVQC outperforms a linear classifier by 27.9%, while the linear classifier using classical computing outperforms the existing VQC by 15.58%.

Li, Jinyang↗
DOE OSTI2018

Investigation of interfacial impurities in m-plane GaN regrown p-n junctions for high-power vertical electronic devices

GaN is an attractive material for high-power electronics due to its wide bandgap and large breakdown field. Verticalgeometry devices are of interest due to their high blocking voltage and small form factor. One challenge for realizing complex vertical devices is the regrowth of low-leakage-current p-n junctions within selectively defined regions of the wafer. Presently, regrown p-n junctions exhibit higher leakage current than continuously grown p-n junctions, possibly due to impurity incorporation at the regrowth interfaces, which consist of c-plane and non-basal planes. Here, we study the interfacial impurity incorporation induced by various growth interruptions and regrowth conditions on m-plane p-n junctions on free-standing GaN substrates. The following interruption types were investigated: (1) sample in the main MOCVD chamber for 10 min, (2) sample in the MOCVD load lock for 10 min, (3) sample outside the MOCVD for 10 min, and (4) sample outside the MOCVD for one week. Regrowth after the interruptions was performed on two different samples under n-GaN and p-GaN growth conditions, respectively. Secondary ion mass spectrometry (SIMS) analysis indicated interfacial silicon spikes with concentrations ranging from 5e16 cm -3 to 2e18 cm -3 for the n-GaN growth conditions and 2e16 cm -3 to 5e18 cm-3 for the p-GaN growth conditions. Oxygen spikes with concentrations ~1e17 cm -3 were observed at the regrowth interfaces. Carbon impurity levels did not spike at the regrowth interfaces under either set of growth conditions. We have correlated the effects of these interfacial impurities with the reverse leakage current and breakdown voltage of regrown m-plane p-n junctions.

42 ENGINEERING↗
DOE OSTI2017

Liquefied gas electrolytes for electrochemical energy storage devices

Electrochemical capacitors and lithium-ion batteries have seen little change in their electrolyte chemistry since their commercialization, which has limited improvements in device performance. Combining superior physical and chemical properties and a high dielectric-fluidity factor, the use of electrolytes based on solvent systems that exclusively use components that are typically gaseous under standard conditions show a wide potential window of stability and excellent performance over an extended temperature range. Electrochemical capacitors using difluoromethane show outstanding performance from –78° to +65°C, with an increased operation voltage. The use of fluoromethane shows a high coulombic efficiency of ~97% for cycling lithium metal anodes, together with good cyclability of a 4-volt lithium cobalt oxide cathode and operation as low as –60°C, with excellent capacity retention.

Science & Technology - Other Topics↗
DOE OSTI2018

A Modular and Flexible High-Frequency-Link Transformer with a Reduced Device Count and Zero High-Side Devices

In general, large power transformers (LPTs) are not interchangeable with each other and their high costs prohibit extensive spare inventories more so considering that on an average only 1.3 LPTs are manufactured for individual design. The latter pose a further challenge since given that the several existing LPTs are reaching their end of service lives, loss of plurality of such LPTs, that form the backbone of U.S. power grid, will clearly run into the problem of energy security related to the non-availability of sufficient spares (and extended lead time) exacerbated further by the fact that these spares are not interchangeable for installations at different locations. Conventional LPT cost millions of dollars and weighs significantly between approximately 100 and 400 tons. Two raw materials—copper and electrical steel—account for over 50 percent of the total cost of an LPT. In recent years, the price volatility of these two commodities in the global market has affected the manufacturing conditions and procurement strategy for LPTs. Transportation is also an important element of the total LPT cost, because an LPT can weigh significantly and often requires long-distance transport. Transporting an LPT is challenging—its large dimensions and heavy weight pose unique requirements to ensure safe and efficient transportation. Current road, rail, and port conditions are such that transportation is taking more time and becoming more expensive. Conventional low-frequency LPTs typically follow a monolithic approach to design due to historical reasons that need to transition to more modular and flexible (e.g., in voltage, impedance, and power flow) designs with ability to seamlessly/near-seamlessly scale. They should also have the ability to incorporate new technologies without in all cases redoing a LPT design from scratch. Given that the cost of raw materials has continued to increase, next-generation LPTs need to pursue avenues for reducing these costs. An added necessity is to reduce the transportability cost, which is significant in conventional LPTs. Further, given that LPTs are for the long term, they need to be durable, efficient, and fault tolerant with overloading capability. Given this backdrop, the objective and accomplishment of this one-year DOE (SPONSOR) R&D project, led by small business NextWatt LLC (PRIME, Lead PI: Dr. Sudip K. Mazumder) and University of Arkansas at Fayetteville (SUBAWARDEE, PI: Dr. Juan Balda) were to explore the design of a (8 – 20 kHz) high-frequency-link (HFL) based 100-MVA LPT with nominal voltage of 115/69 kV, with $15 - $22 dollars US per kVA when manufactured in “moderate” volume, with 99% energy-conversion efficiency, with 300% reduction in both volume and weight compared to a conventional LPT with the same electrical ratings, with impedance variation greater than 5%, with direct AC/AC power conversion capability, with very-high energy-conversion efficiency (using wide-bandgap SiC based field effect MOSFET devices) over a wide operating temperature, with reduction in both volume and weight with regard to conventional low frequency LPT, and with significant reduction in number of devices compared to state of the art solid state transformer topology.

24 POWER TRANSMISSION AND DISTRIBUTION↗
NASA NTRS1933

Wind tunnel research comparing lateral control devices, particularly at high angles of attack X : various control devices on a wing with a fixed auxiliary airfoil

Results are given of a series of systemic tests comparing lateral control devices with particular reference to their effectiveness at high angles of attack. These tests were made with two sizes of ordinary ailerons and different sizes of spoilers on a Clark Y wing model having a narrow auxiliary airfoil fixed ahead and above the leading edge, the chords of the main and auxiliary airfoils being parallel. In addition, the auxiliary airfoil itself was given angular deflection. The purpose was to provide rolling moments for lateral control. The tests were made in a 7 by 10 foot wind tunnel. They included both force and rotation tests to show the effect of the devices on the lift and drag characteristics of the wing and on the lateral stability characteristics, as well as lateral control. They showed that none of the aileron arrangements tried would give rolling control of an assumed satisfactory value at all angles of attack up to the stall. However, they would give satisfactory values, but at the expense of abnormally high deflections and very heavy hinge moments. The most effective combination of ailerons and spoilers gave satisfactory values of rolling moment at angles of attack below the stall, and the values did not fall off as rapidly above the stall as with ailerons alone. With an arrangement of this type having the proper relative proportions and linkage, it should be possible to obtain reasonably satisfactory yawing moments and control forces. Deflecting one-half of the auxiliary airfoil downward for the purpose of control gave strong favorable yawing moments at all angles of attack, but gave very small rolling moments at the low angles of attack.

Weick, Fred E↗