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At least 91 records · Page 5

Optoelectronic and structural characterization of trapezoidal defects in 4H-SiC epilayers and the effect on MOSFET reliability

To this day, trapezoidal defects are found in clusters and high counts in wafers representing the industry standard in terms of material quality being produced. This study sheds light on the nature, origin, behavior, and impact of this defect on device yield and reliability. Trapezoidal defects in 4H-SiC epitaxial layers were investigated by photoluminescence (PL) imaging, scanning electron microscopy (SEM), cathodoluminescence spectrum imaging (CLSI), SEM electron beam induced current (EBIC) imaging, and by transmission electron microscopy (TEM) observation. The bar-shaped stacking faults were identified by the PL and CL measurements with a peak emission wavelength of 420 and 450 nm. An optoelectronic behavioral study based on the recombination enhanced dislocation glide mechanism revealed how expanding dislocations and stacking faults interact with each other. Combining the luminescence and microscopy results, the nature of the stacking faults was identified as being a combination of Shockley-type and Frank-type stacking faults. The TEM analysis showed that these defects originate from the substrate and the stacking sequences of some of the faults were determined as (…2, 4, 2…) and (…2, 3, 2…) in the Zhdanov's notation by high-resolution TEM. The origin of this defect is speculated based on our results and previous reports. The EBIC imaging showed that the high density of SFs in these towers is a strong site of carrier recombination, which presumably has an impact on the transfer characteristics of SiC devices. Furthermore, these defects have shown to impact metal oxide semiconductor field effect transistors electrical performance via an increase in the on-state resistance depending on the coverage percentage of the tower of defects in the active area of the device.

4H-SiC↗

Topological Model of the Pseudogap State: Experimental Signatures

We summarize the basic ideas of our topological model of the pseudogap state of high temperature superconductors (HTS) as a condensate of charged magnetic monopoles, with a focus on new experimental signatures. These include the surface quantum Hall effect, the generation of electric fields when applying magnetic fields by the oblique Meissner effect, and the generation of circular electric fields surrounding electric currents by the oblique Ampère law.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Elucidating the Synergic Effect in Nanoscale MoS 2 /TiO 2 Heterointerface for Na‐Ion Storage

Abstract Interface engineering in electrode materials is an attractive strategy for enhancing charge storage, enabling fast kinetics, and improving cycling stability for energy storage systems. Nevertheless, the performance improvement is usually ambiguously ascribed to the “synergetic effect”, the fundamental understanding toward the effect of the interface at molecular level in composite materials remains elusive. In this work, a well‐defined nanoscale MoS 2 /TiO 2 interface is rationally designed by immobilizing TiO 2 nanocrystals on MoS 2 nanosheets. The role of heterostructure interface between TiO 2 and MoS 2 by operando synchrotron X‐ray diffraction (sXRD), solid‐state nuclear magnetic resonance, and density functional theory calculations is investigated. It is found that the existence of a hetero‐interfacial electric field can promote charge transfer kinetics. Based on operando sXRD, it is revealed that the heterostructure follows a solid‐solution reaction mechanism with small volume changes during cycling. As such, the electrode demonstrates ultrafast Na + ions storage of 300 mAh g −1 at 10 A g −1 and excellent reversible capacity of 540 mAh g −1 at 0.2 A g −1 . This work provides significant insights into understanding of heterostructure interface at molecular level, which suggests new strategies for creating unconventional nanocomposite electrode materials for energy storage systems.

25 ENERGY STORAGE↗

Electrically Accelerated Mechanochemical Film Formation by a Phosphonium Phosphate Ionic Liquid: An In Situ Chemical Kinetics Investigation

Powertrains in electric vehicles are exposed to stray currents that accelerate wear and cause failure of mechanical components. These durability issues are further aggravated when using low-viscosity lubricants, which are desired for energy efficiency but create harsher contact conditions at sliding interfaces. This study investigates a phosphonium phosphate ionic liquid as a performance-enhancing additive in a low-viscosity base oil for lubricating electrified sliding interfaces. Ionic liquids can adsorb and react on contact interfaces via stress-assisted chemical reactions, generating nanometric tribofilms that provide protection against wear. However, the effect of electric fields on the mechanochemistry of ionic liquids is poorly understood, hindering their adoption in lubricants for electrified powertrains. This article reports an in situ optical interferometry study of ionic liquid derived tribofilm growth kinetics at stressed sliding/rolling interfaces under direct currents. The application of electric currents accelerated tribofilm formation up to a critical current density (∼1.4 A/mm 2 ), beyond which pitting-induced wear dominated. The tribofilms were composed of iron phosphates, iron oxides, and carbon species, with iron oxides becoming predominant under applied currents. These tribofilms prevented the scuffing failure of steel surfaces under electrified conditions. Based on the results, a kinetic model is proposed that integrates electric current effect into the classical stress-assisted thermal activation framework to allow prediction of tribofilm growth at electrified sliding contacts. This framework provides crucial guidance for designing next-generation lubricants for electrified transportation and power generation systems.

additives↗

Probing topological phases in a perturbed Kane-Mele model via RKKY interaction: Application to monolayer jacutingaite Pt 2 ⁢HgSe 3

Quantum spin Hall insulators (QSHIs) leverage strong spin-orbit coupling (SOC) for efficient spin manipulation, making them promising for spintronics. Here, in this study, we investigate the noncollinear Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction between two magnetic impurities in a perturbed Kane-Mele model with strong SOC, relevant to monolayer jacutingaite Pt 2 ⁢HgSe 3 as a prominent QSHI. Following the previous studies that mainly focused on the model and its general applications, we provide a systematic examination of the effects of various perturbations and strong spin-orbit hybridizations, which drive phase transitions that have not been extensively explored before. By incorporating these perturbations into the model and accurately accounting for spin-orbit hybridizations through spin-space Green's functions and the RKKY interactions, we uncover distinct, relative (rather than absolute) signatures of different phase transitions. These phase transitions are induced by both static and dynamic perturbations on the magnetic impurities. Notably, we identify additional phases emerging from the interplay with the magnetic substrate. All these influence the switching between ferromagnetic and antiferromagnetic, as well as clockwise and counterclockwise magnetic interactions. Our results provide a practical way to track topological phases through magnetic properties, offering new insights into phase control and spin manipulation in QSHIs.

Kane-Mele model↗

Anisotropic light-tailored RKKY interaction in two-dimensional 𝑑-wave altermagnets

Altermagnets are known in spintronics for their intrinsic spin-splitting and unconventional magnetic responses, particularly to magnetic impurities. However, effectively controlling the magnetic exchange interactions in altermagnets is challenging for practical applications. Here, in this work, we propose using circularly polarized light to tune the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction in two-dimensional 𝑑-wave altermagnets. Using the real-space retarded Green's functions approach, our results show that while the Heisenberg and Ising exchanges dominate, a notable Dzyaloshinskii–Moriya (DM) interaction also plays a key role. Furthermore, the inherent strength of altermagnetism imprints chirp-like signatures into the magnetic responses, which can be dynamically tuned via light. We mainly demonstrate that gate-induced Rashba spin-orbit coupling is essential in response to light—light selectively and anisotropically adjusts the DM interaction without affecting the other exchanges. Our findings further indicate that rotating the altermagnet by 45° relative to the light's polarization direction generates a Dirac-like dispersion and different DM interactions. We finally extract critical thresholds where light reverses DM interactions along one axis or balances both in-plane components. The anisotropic light-driven control of RKKY interactions in altermagnets not only highlights their unique properties but also opens new avenues for engineering tailored magnetic characteristics in spintronic applications.

altermagnetism↗

Ionic Modulation at the LaAlO 3 /KTaO 3 Interface for Extreme High-Mobility Two-Dimensional Electron Gas

Due to the coexistence of many emergent phenomena, including 2D superconductivity and a large Rashba spin-orbit coupling, 5d transition metal oxides-based two-dimensional electron systems (2DESs) have been prospected as one of the potential intrants for modern electronics. However, despite the lighter electron mass, the mobility of carriers, a key requisite for high-performance devices, in 5d-oxides devices remains far behind their 3d-oxides analogs. The carriers’ mobility in these oxides is significantly hampered by the inevitable presence of defects. Here, in this study, very high mobility (≈22 650 cm 2 V –1 s –1 ) of 5d-2DES confined at the LaAlO 3 /KTaO 3 interface is reported. The high mobility, which is beyond the values observed in SrTiO 3 2DESs in the same carrier-density range, is achieved using the ionic-liquid gating at room temperature. The authors postulate that the ionic-liquid gating affects the oxygen vacancies and efficiently reduces any disorder at the interface. Investigating density and mobility in a broad range of back-gate voltage, the authors reveal that the mobility follows the power-law µ ∝ n 1.2 , indicating the very high quality of ionic-liquid-gated LaAlO 3 /KTaO 3 devices, consistent with the postulate. Furthermore, the analysis of the quantum oscillations confirms that the high-mobility electrons occupy the electronic sub-bands emerging from the Ta:5d orbitals of KTaO 3 .

36 MATERIALS SCIENCE↗

Ferroelectric Switching of Pure Spin Polarization in Two-Dimensional Electron Gas

Two-dimensional electron gas (2DEG) created at compound interfaces can exhibit a broad range of exotic physical phenomena, including quantum Hall phase, emergent ferromagnetism, and superconductivity. Although electron spin plays key roles in these phenomena, the fundamental understanding and application prospects of such emergent interfacial states have been largely impeded by the lack of purely spin-polarized 2DEG. In this paper, by first-principles calculations of the multiferroic superlattice GeTe/MnTe, we find the ferroelectric polarization of GeTe is concurrent with the half-metallic 2DEG at interfaces. Remarkably, the pure spin polarization of the 2DEG can be created and annihilated by polarizing and depolarizing the ferroelectrics and can be switched (between pure spin-up and pure spin-down) by flipping the ferroelectric polarization. Given the electric-field amplification effect of ferroelectric electronics, we envision multiferroic superlattices could open up new opportunities for low-power, high-efficiency spintronic devices such as spin field-effect transistors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Diffusive excitonic bands from frustrated triangular sublattice in a singlet-ground-state system

Magnetic order in most materials occurs when magnetic ions with finite moments arrange in a particular pattern below the ordering temperature. Intriguingly, if the crystal electric field (CEF) effect results in a spin-singlet ground state, a magnetic order can still occur due to the exchange interactions between neighboring ions admixing the excited CEF levels. The magnetic excitations in such a state are spin excitons generally dispersionless in reciprocal space. Here we use neutron scattering to study stoichiometric Ni 2 Mo 3 O 8 , where Ni 2+ ions form a bipartite honeycomb lattice comprised of two triangular lattices, with ions subject to the tetrahedral and octahedral crystalline environment, respectively. We find that in both types of ions, the CEF excitations have nonmagnetic singlet ground states, yet the material has magnetic order. Furthermore, CEF spin excitons from the tetrahedral sites form a dispersive diffusive pattern around the Brillouin zone boundary, likely due to spin entanglement and geometric frustrations.

36 MATERIALS SCIENCE↗

Bichromatic moiré superlattices for tunable quadrupolar trions and correlated states

Moiré superlattices in transition metal dichalcogenide heterostructures provide a platform to engineer many-body interactions. Here, we realize a bichromatic moiré superlattice in an asymmetric WSe2/WS2/WSe2 heterotrilayer by combining R- and H-stacked bilayers with mismatched moiré wavelengths. This structure hosts fermionic quadrupolar moiré trions—interlayer excitons bound to an opposite-layer hole—with vanishing dipole moments. These trions arise from hybridized moiré potentials enabling multiple excitonic orbitals with tunable interlayer coupling, allowing control of excitonic and electronic ground states. We show that an out-of-plane electric field could effectively reshape moiré excitons and interlayer-intralayer electron correlations, driving a transition from interlayer to intralayer Mott states with enhanced Coulomb repulsion. The asymmetric stacking further enriches excitonic selection rules, broadening opportunities for spin-photon engineering. Our results demonstrate bichromatic moiré superlattices as a reconfigurable platform for emergent quantum states, where quadrupolar moiré trion emission may enable coherent and entangled quantum light manipulation.

Chen, Mingfeng [Washington University in St. Louis↗

Nanoscale electric field imaging with an ambient scanning quantum sensor microscope

Nitrogen-vacancy (NV) center in diamond is a promising quantum sensor with remarkably versatile sensing capabilities. While scanning NV magnetometry is well-established, NV electrometry has been so far limited to bulk diamonds. Here we demonstrate imaging external alternating (AC) and direct (DC) electric fields with a single NV at the apex of a diamond scanning tip under ambient conditions. A strong electric field screening effect is observed at low frequencies. We quantitatively measure its frequency dependence and overcome this screening by mechanically oscillating the tip for imaging DC fields. Our scanning NV electrometry achieved an AC E-field sensitivity of 26 mV μm -1 Hz -1/2 , a DC E-field gradient sensitivity of 2 V μm -2 Hz -1/2 , and sub-100 nm resolution limited by the NV-sample distance. Our work represents an important step toward building a scanning-probe-based multimodal quantum sensing platform.

47 OTHER INSTRUMENTATION↗

Memsensing by surface ion migration within Debye length

Integration between electronics and biology is often facilitated by iontronics, where ion migration in aqueous media governs sensing and memory. However, the Debye screening effect limits electric fields to the Debye length, the distance over which mobile ions screen electrostatic interactions, necessitating external voltages that constrain the operation speed and device design. Here we report a high-speed in-memory sensor based on vanadium dioxide (VO2) that operates without an external voltage by leveraging built-in electric fields within the Debye length. When VO2 contacts a low-work-function metal (for example, indium) in a salt solution, electrochemical reactions generate indium ions that migrate into the VO2 surface under the native electric field, inducing a surface insulator-to-metal phase transition of VO2. The VO2 conductance increase rate reflects the salt concentration, enabling in-memory sensing, or memsensing of the solution. The memsensor mimics Caenorhabditis elegans chemosensory plasticity to guide a miniature boat for adaptive chemotaxis, illustrating low-power aquatic neurorobotics with fewer memory units.

Guo, Ruihan↗

Single-shot electron radiography using a laser–plasma accelerator

Contact and projection electron radiography of static targets was demonstrated using a laser–plasma accelerator driven by a kilojoule, picosecond-class laser as a source of relativistic electrons with an average energy of 20 MeV. Objects with areal densities as high as 7.7 g/cm2 were probed in materials ranging from plastic to tungsten, and radiographs with resolution as good as 90 μm were produced. The effects of electric fields produced by the laser ablation of the radiography objects were observed and are well described by an analytic expression relating imaging magnification change to electric-field strength.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Computational analysis of ion orbital loss in diverted positive- and negative-triangularity tokamaks

The mechanism of ion orbital loss in diverted negative-triangularity (NT) tokamaks is significantly different from that of positive-triangularity (PT) tokamaks. The orbital loss from the edge of NT tokamaks can be quite large, because the separatrix X-point is located on the outboard side, meaning that trapped ions crossing the separatrix are lost to the inboard divertor plate after a mirror reflection on the side of the strong magnetic field. NT tokamaks have difficulties in building up steep pressure gradients in the edge regions. However, the majority of trapped ions crossing the separatrix in PT tokamaks survive (through complete banana motions) without reaching the X-point region. For NT tokamaks, topological changes in the trapped ion trajectories can be achieved in the presence of the radial electric field, thus reducing the orbital loss, whereas for PT tokamaks, the orbital loss is relatively insensitive to the radial electric field.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Phase transitions in HfO2 probed by first-principles computations

Ever since ferroelectricity was discovered in HfO2, the question of its origin remains controversial. Here, we probe this question using a combination of Landau theory of phase transitions and first-principles computations. In such an approach, the energy landscape associated with the phase transition between cubic and different experimentally demonstrated phases of HfO2 (tetragonal, monoclinic, orthorhombic Pbca, orthorhombic Pnma, and orthorhombic Pca21) is explored using density functional theory calculations. Computations revealed that stabilization of all but orthorhombic Pbca phase is driven by a single unstable zone-boundary antipolar mode X2−. When coupled with zone-center modes (Γ1+ and Γ3+), it stabilizes the tetragonal phase. Coupling with four additional modes (Γ5+, X3−, X5−, X5+) results in the monoclinic phase, which is the ground state of the material. If, however, Γ5+ mode is replaced with Γ4− mode, orthorhombic polar phase Pca21 is stabilized. The application of this framework to examine the effect of electric field on the ferroelectric phase of hafnia reveals that the field of 5 MV/cm is capable of stabilizing ferroelectric phase over the monoclinic one at 0 K.

Physics↗

On the minimum transport required to passively suppress runaway electrons in SPARC disruptions

In Izzo et al (2022 Nucl. Fusion 62 096029), state-of-the-art modeling of thermal and current quench (CQ) magnetohydrodynamics (MHD) coupled with a self-consistent evolution of runaway electron (RE) generation and transport showed that a non-axisymmetric (n = 1) in-vessel coil could passively prevent RE beam formation during disruptions in SPARC, a compact high-field tokamak projected to achieve a fusion gain Q > 2 in DT plasmas. However, such suppression requires finite transport of REs within magnetic islands and re-healed flux surfaces; conservatively assuming zero transport in these regions leads to an upper bound of RE current ~1MA compared to ~8.7MA of pre-disruption plasma current. Further investigation finds that core-localized electrons, within r/a < 0.4 and with kinetic energies ~0.2–15 MeV, contribute most to the RE plateau formation. Yet only a relatively small amount of transport, i.e. a diffusion coefficient ~18 m 2 s -1 , is needed in the core to fully mitigate these REs. Properly accounting for (a) the CQ electric field's effect on RE transport in islands and (b) the contribution of significant RE currents to disruption MHD may help achieve this.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗