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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Electron Transport in Polymerized Cytochrome Appendages

This project has been aimed at understanding the mechanism of long-range electron transport in extracellular cytochrome polymers. Starting with the initial discovery of OmcS filaments in Geobacter sulfurreducens, the three laboratories supported by this award characterized the extracellular polymers of two other cytochromes, OmcE and OmcZ. The overall work showed that the predominant view that existed, that these extracellular filaments were type IV pili, was completely wrong.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2023

An electron paramagnetic resonance study of the electron transport in heavily Si-doped high Al content AlxGa1−xN

High Al mole fraction AlGaN is an ultrawide bandgap semiconductor with potential applications in power electronics and deep UV detectors. Although n-type material is achievable with Si-doping, the role of Si is controversial, particularly for AlxGa1−xN with x > 0.8. For this paper, AlGaN films were grown by plasma-assisted molecular beam epitaxy onto bulk AlN substrates and doped with 1018–1020 cm−3 Si. We examine electron transport in heavily Si-doped AlxGa1−xN with x ≥ 0.65 using magnetic resonance, which allows us to probe the neutral donors directly rather than the free carriers and avoids complications due to electrical contacts. Transport was studied through the temperature-dependent linewidth of the electron paramagnetic resonance (EPR) signature for the neutral donor. Analysis shows evidence of hopping conductivity in the most lightly doped samples and impurity band formation in the most heavily doped ones. The EPR results, which are consistent with Hall measurements performed on the same samples, are promising for the development of highly conducting high Al content AlGaN.

Materials Science↗
DOE OSTI2022

Unusual electronic transport in (1 - x )Cu 2 Se-( x )CuInSe 2 hierarchical composites

The ability to control the relative density of electronic point defects as well as their energy distribution in semiconductors could afford a systematic modulation of their electronic, optical, and optoelectronic properties. Using a model binary hybrid system Cu 2 Se–CuInSe 2 , we have investigated the correlation between phase composition, microstructure, and electronic transport behavior in the synthesized composites. We found that both Cu 2 Se and CuInSe 2 phases coexist at multiple length scales, ranging from sub-ten nanometer to several micrometers, leading to the formation of a hybrid hierarchical microstructure. Astonishingly, the electronic phase diagram of the (1 - x)Cu 2 Se–(x)CuInSe 2 (15% ≤ x ≤ 100%) hierarchical composites remarkably deviates from the trend normally expected for composites between a heavily doped semiconductor (Cu 2 Se) and a poorly conducting phase (CuInSe 2 ). A sudden 3-fold increase in the electrical conductivity and carrier concentration along with a marginal increase in the carrier mobility is observed for composites at the vicinity of equimolar composition (48% ≤ x ≤ 52%). The carrier concentration increases from ~1.5 × 10 20 cm -3 for the composites with x ≤ 45% to 5.0 × 10 20 cm -3 for x = 50%, and remains constant at 4.5 × 10 20 cm -3 with x value in the range of 52% < x ≤ 90%, then quickly drops to 8 × 10 18 cm -3 for pristine CuInSe 2 phase (x = 100%). The atypical electronic behavior was rationalized in the light of the formation of an inter-band (IB) within the band gap, which arises from the hybridization of native electronic point defects from both Cu 2 Se and CuInSe 2 phases in the resulting hierarchical composites. The result points to a new strategy to modulate the electronic structure of semiconductor composites to maximize interaction and coupling between two fundamentally contrasting properties enabling access to electronic hybrid systems with potential applications as interactive and stimuli-responsive multifunctional materials.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Soliton-Dependent Electronic Transport across Bilayer Graphene Domain Wall

Layer-stacking domain wall in bilayer graphene is one type of topological defects that can greatly affect the electronic properties of bilayer graphene and therefore lead to nontrivial transport behaviors. An outstanding question on the layer stacking domain wall is how the electrons hop between two adjacent stacking domains. Here we report the first experimental observation of electronic transport across bilayer graphene domain walls by combining near-field infrared nanoscopy and scanning voltage microscopy techniques. In this work, we observe markedly different electron transport behaviors across the tensile- and shear-type domain walls. The tensile-type domain wall is highly reflective of low-energy incident electrons, but becomes more transparent when the electron density and the Fermi energy are increased by electrostatic gating. In contrast, the shear-type domain wall is always highly transparent at different gate voltages. Such soliton-dependent electronic transport can open up new routes to engineer novel nanoelectronic devices based on layer-stacking domain walls in bilayer graphene.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2022

Area-Scalable Zn 2 SnO 4 Electron Transport Layer for Highly Efficient and Stable Perovskite Solar Modules

The development of a scalable chemical bath deposition (CBD) process facilitates the realization of electron-transporting layers (ETLs) for large-area perovskite solar modules (PSMs). In this work, a method to prepare a uniform and scalable thick Zn 2 SnO 4 ETL by CBD, which yielded high-performance PSMs, is reported. This Zn 2 SnO 4 ETL exhibits excellent electrical properties and enhanced optical transmittance in the visible region. Moreover, the Zn 2 SnO 4 ETL influences the perovskite layer formation, yielding enhanced crystallinity, increased grain size, and a smoother surface, thus facilitating electron extraction and collection from the perovskite to the ETL. Zn 2 SnO 4 thereby yields PSMs with a remarkable photovoltaic performance, low hysteresis index, and high device reproducibility. The champion PSM exhibited a power conversion efficiency (PCE) of 22.59%, being among the highest values published so far. In addition, the CBD Zn 2 SnO 4 -based PSMs exhibit high stability, retaining more than 88% of initial efficiency over 1000 h under continuous illumination. This demonstrates that CBD Zn 2 SnO 4 is an appropriate ETL for high-efficiency PSMs and a viable new process for their industrialization.

17 WIND ENERGY↗
DOE OSTI2024

Engineering Anomalously Large Electron Transport in Topological Semimetals

Abstract Anomalous transport of topological semimetals has generated significant interest for applications in optoelectronics, nanoscale devices, and interconnects. Understanding the origin of novel transport is crucial to engineering the desired material properties, yet their orders of magnitude higher transport than single‐particle mobilities remain unexplained. This work demonstrates the dramatic mobility enhancements result from phonons primarily returning momentum to electrons due to phonon‐electron dominating over phonon–phonon scattering. Proving this idea, proposed by Peierls in 1932, requires tuning electron and phonon dispersions without changing symmetry, topology, or disorder. This is achieved by combining de Haas ‐ van Alphen (dHvA), electron transport, Raman scattering, and first‐principles calculations in the topological semimetals MX 2 (M = Nb, Ta and X = Ge, Si). Replacing Ge with Si brings the transport mobilities from an order magnitude larger than single particle ones to nearly balanced. This occurs without changing the crystal structure or topology and with small differences in disorder or Fermi surface. Simultaneously, Raman scattering and first‐principles calculations establish phonon–electron dominated scattering only in the MGe 2 compounds. Thus, this study proves that phonon‐drag is crucial to the transport properties of topological semimetals and provides insight to engineer these materials further.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Electronic transport properties of a lithium-decorated ZrTe 5 thin film

Through a combination of single crystal growth, experiments involving in situ deposition of surface adatoms, and complimentary modeling, we examine the electronic transport properties of lithiumdecorated ZrTe 5 thin films. We observe that the surface states in ZrTe 5 are robust against Li adsorption. Both the surface electron density and the associated Berry phase are remarkably robust to adsorption of Li atoms. Fitting to the Hall conductivity data reveals that there exist two types of bulk carriers: those for which the carrier density is insensitive to Li adsorption, and those whose density decreases during initial Li depositions and then saturates with further Li adsorption. We propose this dependence is due to the gating effect of a Li-adsorption-generated dipole layer at the ZrTe 5 surface.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Deepening the LUMO: Brominated Naphthalene Diimide Electron Transport Layers for Low-Hysteresis Perovskite Solar Cells

Precise energy level alignment at the interfaces between the charge transport layers, active layer, and electrodes plays a key role in maximizing photovoltaic performance and operational stability in perovskite solar cells (PSCs). Organic electron transport layers (ETLs) have received little attention compared to their inorganic counterparts but offer the unique advantage of facile functionalization for fine-tuning of electronic properties. Here, we report the design, synthesis, and characterization of two benzyl-phosphonic acid (BnPA)-functionalized naphthalene diimide (NDI) derivatives, NDI-(BnPA) 2 and Br 2 -NDI-(BnPA) 2 as organic ETLs for PSCs in an n-i-p device configuration. Bromination of the NDI core at the 4,9-positions deepens the lowest unoccupied molecular orbital (LUMO) in Br 2 -NDI-(BnPA) 2 by 0.29 eV, enabling improved energy alignment with the conduction band minimum of the perovskite. Devices incorporating Br 2 -NDI-(BnPA) 2 demonstrated enhanced short-circuit current density (JSC), reduced hysteresis, and a maximum power conversion efficiency of 13.67%, compared to 13.20% for the unsubstituted NDI-(BnPA) 2 analog. The deeper LUMO of Br 2 -NDI-(BnPA) 2 is hypothesized to facilitate more efficient electron extraction, suppress interfacial charge accumulation, and reduce field-driven ion migration, collectively contributing to the observed reduction in hysteresis. These results highlight the effectiveness of combining molecular-level LUMO tuning with robust interfacial anchoring to advance the performance and durability of organic ETLs in PSCs.

Deposition↗
DOE OSTI2020

Fast electron transport dynamics and energy deposition in magnetized, imploded cylindrical plasma

Inertial confinement fusion approaches involve the creation of high-energy-density states through compression. High gain scenarios may be enabled by the beneficial heating from fast electrons produced with an intense laser and by energy containment with a high-strength magnetic field. Here, we report experimental measurements from a configuration integrating a magnetized, imploded cylindrical plasma and intense laser-driven electrons as well as multi-stage simulations that show fast electrons transport pathways at different times during the implosion and quantify their energy deposition contribution. The experiment consisted of a CH foam cylinder, inside an external coaxial magnetic field of 5 T, that was imploded using 36 OMEGA laser beams. Two-dimensional (2D) hydrodynamic modelling predicts the CH density reaches 9.0 g cm − 3 , the temperature reaches 920 eV and the external B-field is amplified at maximum compression to 580 T. At pre-determined times during the compression, the intense OMEGA EP laser irradiated one end of the cylinder to accelerate relativistic electrons into the dense imploded plasma providing additional heating. The relativistic electron beam generation was simulated using a 2D particle-in-cell (PIC) code. Finally, three-dimensional hybrid-PIC simulations calculated the electron propagation and energy deposition inside the target and revealed the roles the compressed and self-generated B-fields play in transport. During a time window before the maximum compression time, the self-generated B-field on the compression front confines the injected electrons inside the target, increasing the temperature through Joule heating. For a stronger B-field seed of 20 T, the electrons are predicted to be guided into the compressed target and provide additional collisional heating. This article is part of a discussion meeting issue ‘Prospects for high gain inertial fusion energy (part 2)’.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Observation of Single-Electron Transport and Charging on Individual Point Defects in Atomically Thin WSe 2

Defects significantly impact the properties of 2D semiconductors, providing in-gap quantum states that can serve as a natural platform for single-electron operations, localization sites for excitons to serve as single-photon sources, and potentially quantum spin memories. To date, however, a microscopic observation of such a single-electron transport (SET) behavior has been rarely reported on single defects of 2D semiconductors. In this study, we report a SET and charge-state transition on individual point-defect states buried in the bilayer WSe 2 using scanning tunneling microscopy. SET characteristics of their states is evidenced by both the Coulomb staircase and the saturation behavior of the transport current, consistent with the SET model. Furthermore, we demonstrate that, through the local field of a scanning tunneling microscope tip, it is possible to successively charge the defects by single electrons, suggested by both the ring structures and charging peaks in dI/dV measurements. Our results provide new insights into the quantum nature of these defect-bound states, as well as the possibility of using their single-electron behavior and response for applications in quantum information and local-field sensing.

2D semiconductor↗
DOE OSTI2022

A Mixed PC 61 BM‐CO i 8DFIC Based Electron Transport Material for Inverted High‐performance Perovskite Solar Cells

Abstract This study reports a blend of [6, 6]‐phenyl‐C61‐butyric acid methyl ester (PC 61 BM) and CO i 8DFIC non‐fullerene acceptor (NFA) as an electron transport layer (ETL) in perovskite solar cells (PSCs). This mixed small‐molecule ETL showed good inter‐molecule mixing, reduced intermolecular distances and decent morphology, resulting in excellent charge carrier transport properties. Morever, charge carrier extraction and transport at the perovskite/ETL interface was optimized by reducing surface traps and defects due to the passivation ability of various terminal groups from the CO i 8DFIC molecule. A high power conversion efficiency (PCE) of 19.12 % was achieved by taking advantage of benefits from both molecules, showing much better performance than the invidual PC 61 BM or CO i 8DFIC (7.13% for using the NFA only). Moreover, the storage and ambient stabilities of the mixed ETL‐based PSCs increased dramatically compared to control devices.

Chemistry↗
DOE OSTI2024

Native Defects Hybridization and Electronic Transport in Cu 2 Se–CuGaSe 2 Hierarchical Composites

Engineering the energy distribution of electronic defects in semiconductors can afford the coexistence of degenerate and nondegenerate transport behavior. By leveraging native defects in Cu 2 Se and CuGaSe 2 phases, the tunability of the concentration and energy distribution of active electronic defects in hierarchical (1-x)Cu 2 Se-(x)CuGaSe 2 composites is demonstrated. This study found that the electrical conductivity of various composites decreases with rising temperature indicating degenerate semiconducting behavior, whereas the carrier density increases with temperature, which is consistent with non-degenerate semiconductivity. Remarkably, this study found that while the carrier density and electrical conductivity drop with the increasing CuGaSe 2 content for samples with x ≤ 0.45 is consistent with an increase in the activation energy of “active” electronic defects, the sudden increase by 140% in the electrical conductivity and by 109% in the carrier density for near equimolar composition suggests the formation of a large density of electronic defects with lower activation energy. This unusual behavior is understood within the context of the hybridization of coexisting native electronic defects to form degenerate hybrid acceptor states with lower activation energy. The reported unique electronic transport can be leveraged for the development of more versatile electronic and optoelectronic devices with superior performance.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Electron transport in a collisional plasma with multiple ion species in the presence of a magnetic field

The classical work of Braginskii [Zh. Eksp. Teor. Fiz. 33, 459 (1957)] published almost 65 years ago was the first to provide a complete, closed fluid description of a weakly coupled, fully ionized, collisional plasma immersed in a magnetic field. While this fact is not widely known or appreciated, the Braginskii expressions for the electron transport coefficients can under- or overestimate the said coefficients by up to a factor of two for the electron Hall parameter of order unity (with the Hall parameter being proportional to the electron gyro-frequency over the electron–ion collision frequency) and can provide incorrect Hall-parameter scalings for its large values. Starting with the work of Epperlein and Haines [Phys. Fluids 29, 1029 (1986)], several papers attempted to correct the Braginskii electron results with varying degrees of success. Herein, we present our own effort with a hope to finally put this problem to rest.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Inkjet-printed SnO x as an effective electron transport layer for planar perovskite solar cells and the effect of Cu doping

Inkjet printing is a more sustainable and scalable fabrication method than spin coating for producing perovskite solar cells (PSCs). Although spin-coated SnO 2 has been intensively studied as an effective electron transport layer (ETL) for PSCs, inkjet-printed SnO 2 ETLs have not been widely reported. Here, we fabricated inkjet-printed, solution-processed SnO x ETLs for planar PSCs. A champion efficiency of 17.55% was achieved for the cell using a low-temperature processed SnO x ETL. The low-temperature SnO x exhibited an amorphous structure and outperformed high-temperature crystalline SnO 2 . The improved performance was attributed to enhanced charge extraction and transport and suppressed charge recombination at ETL/perovskite interfaces, which originated from enhanced electrical and optical properties of SnO x , improved perovskite film quality, and well-matched energy level alignment between the SnO x ETL and the perovskite layer. Furthermore, SnO x was doped with Cu. Cu doping increased surface oxygen defects and upshifted energy levels of SnO x , leading to reduced device performance. A tunable hysteresis was observed for PSCs with Cu-doped SnO x ETLs, decreasing at first and turning into inverted hysteresis afterwards with increasing Cu doping level. This tunable hysteresis was related to the interplay between charge/ion accumulation and recombination at ETL/perovskite interfaces in the case of electron extraction barriers.

14 SOLAR ENERGY↗
DOE OSTI2021

Robust Unencapsulated Perovskite Solar Cells Protected by a Fluorinated Fullerene Electron Transporting Layer

The emergent perovskite photovoltaics technology faces challenges like the long-term durability combining moisture, thermal, and photo stresses that prevents them from competing with established technologies. In this work, we introduce a series of new fluorinated fullerenes as an electron-transporting layer (ETL) for robust perovskite photovoltaics that deliver a high power conversion efficiency of 21.27% with substantially improved durability against environmental stressing. The hydrophobic nature of the new fullerene protects the unencapsulated perovskite cell with stability over 1400 h in 85% relative humidity. Notably, the unencapsulated device maintained 80% of their original performance (T-80) after being immersed in water for over 10 min. Detailed characterizations suggest that the fluorinated fullerene can immobilize the cations in perovskites and passivate the surface traps. Therefore, the T-80 lifetime of the devices under constant illumination reached 1920 h. On the basis of the accelerated test, we estimate a lifetime approaching 10 years with encapsulation. The successful demonstration of the new ETL can stimulate further research and momentum for future photovoltaic technology development.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Magnetic, thermal, and electronic-transport properties of EuMg 2 Bi 2 single crystals

The trigonal compound EuMg 2 Bi 2 has recently been discussed in terms of its topological band properties. These are intertwined with its magnetic properties. In this paper detailed studies of the magnetic, thermal, and electronic-transport properties of EuMg 2 Bi 2 single crystals are presented. The Eu + 2 spins 7/2 in EuMg 2 Bi 2 exhibit an antiferromagnetic (AFM) transition at a temperature T N = 6.7 K, as previously reported. By analyzing the anisotropic magnetic susceptibility χ data below T N in terms of molecular-field theory (MFT), the AFM structure is inferred to be a c -axis helix, where the ordered moments in the hexagonal a b -plane layers are aligned ferromagnetically in the a b plane with a turn angle between the moments in adjacent moment planes along the c axis of ≈ 120 ° . An alternate but less likely magnetic structure is a planar structure with nearest-neighbor Eu spins aligned at ≈ 120 ° with respect to each other, where these ordered-moment layers are stacked along the c axis. The magnetic heat capacity exhibits a λ anomaly at T N with evidence of dynamic short-range magnetic fluctuations both above and below T N . The high- T limit of the magnetic entropy is close to the theoretical value for spins 7/2. The in-plane electrical resistivity ρ ( T ) data indicate metallic character with a mild and disorder-sensitive upturn below T min = 23 K. An anomalous rapid drop in ρ ( T ) on cooling below T N as found in zero field is replaced by a two-step decrease in magnetic fields. The ρ ( T ) measurements also reveal an additional transition below T N in applied fields of unknown origin that is not observed in the other measurements and may be associated with an incommensurate to commensurate AFM transition. The dependence of T N on the c -axis magnetic field H ⊥ was derived from the field-dependent χ ( T ) , C p ( T ) , and ρ ( T ) measurements. This T N ( H ⊥ ) was found to be consistent with the prediction of MFT for a c -axis helix with S = 7 / 2 and was used to generate a phase diagram in the H ⊥ – T plane.

36 MATERIALS SCIENCE↗