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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

A Landau-Devonshire Approach of Elastic Strain Effects on Ferroelectric Al1-xScxN

Landau-Devonshire thermodynamic modeling enables the phenomenological description of ferroelectrics. 1 The approach has been validated across a wide range of ferroelectric materials from the first ferroelectric discovered, Rochelle Salt, to recent HfO2-based materials. 2-4 Extension to what is now referred to as the Landau-Ginsburg-Devonshire model enables rigorous investigation of polarization boundaries and reorientation, phase transformations, and domain formation/evolution. We present a thermodynamic analysis of the recently discovered nitride ferroelectric materials 5-7 using the classic Landau-Devonshire approach. The electrostrictive and dielectric stiffness coefficients of Al1-xScxN with wurtzite structure (6mm) are determined using a free energy density function assuming a hexagonal parent phase (6/mmm), with the first order phase transition based on the dielectric stiffness relationships (Fig. 1). The results of this analysis show that the strain sensitivity of the energy barrier is one order of magnitude larger than that of the spontaneous polarization in these wurtzite ferroelectrics, yet both are less sensitive to strain compared to classic perovskite ferroelectrics (Fig. 2). These analysis results reported here explain experimentally reported sensitivity of coercive field to elastic strain/stress in Al1-xScxN films, and would enable further thermodynamic analysis via phase field simulation and related methods.

CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS↗
DOE OSTI2020

Anharmonic Eigenvectors and Acoustic Phonon Disappearance in Quantum Paraelectric SrTiO 3

Pronounced anomalies in the SrTiO 3 dynamical structure factor, S(Q,E), including the disappearance of acoustic phonon branches at low temperatures, were uncovered with inelastic neutron scattering (INS) and simulations. The striking effect reflects anharmonic couplings between acoustic and optic phonons and the incipient ferroelectric instability near the quantum critical point. It is rationalized using a first-principles renormalized anharmonic phonon approach, pointing to nonlinear Ti-O hybridization causing unusual changes in real-space phonon eigenvectors, frequencies, group velocities, and scattering phase space. Lastly, our method is general and establishes how T dependences beyond the harmonic regime, assessed by INS mapping of large reciprocal-space volumes, provide real-space insights into anharmonic atomic dynamics near phase transitions.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Reversible long-range domain wall motion in an improper ferroelectric

Reversible ferroelectric domain wall movements beyond the 10 nm range associated with Rayleigh behavior are usually restricted to specific defect-engineered systems. Here, we demonstrate that such long-range movements naturally occur in the improper ferroelectric ErMnO 3 during electric-field-cycling. We study the electric-field-driven motion of domain walls, showing that they readily return to their initial position after having traveled distances exceeding 250 nm. By applying switching spectroscopy band-excitation piezoresponse force microscopy, we track the domain wall movement with nanometric spatial precision and analyze the local switching behavior. Phase field simulations show that the reversible long-range motion is intrinsic to the hexagonal manganites, linking it to their improper ferroelectricity and topologically protected structural vortex lines, which serve as anchor point for the ferroelectric domain walls. Our results give new insight into the local dynamics of domain walls in improper ferroelectrics and demonstrate the possibility to reversibly displace domain walls over much larger distances than commonly expected for ferroelectric systems in their pristine state, ensuring predictable device behavior for applications such as tunable capacitors or sensors.

Zahn, Manuel [Norwegian Univ. of Science and Techn↗
DOE OSTI2022

A Landau–Devonshire analysis of strain effects on ferroelectric Al 1-x Sc x N

We present a thermodynamic analysis of the recently discovered nitride ferroelectric materials using the classic Landau–Devonshire approach. Electrostrictive and dielectric stiffness coefficients of Al 1-x Sc x N with a wurtzite structure (6 mm) are determined using a free energy density function assuming a hexagonal parent phase (6/mmm), with the first-order phase transition based on the dielectric stiffness relationships. The results of this analysis show that the strain sensitivity of the energy barrier is one order of magnitude larger than that of the spontaneous polarization in these wurtzite ferroelectrics, yet both are less sensitive to strain compared to classic perovskite ferroelectrics. These analysis results reported here explain experimentally reported sensitivity of the coercive field to elastic strain/stress in Al 1-x Sc x N films and would enable further thermodynamic analysis via phase field simulation and related methods.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Induced ferroelectric phases in SrTiO 3 by a nanocomposite approach

Inducing new phases in thick films via vertical lattice strain is one of the critical advantages of vertically aligned nanocomposites (VANs). In SrTiO 3 (STO), the ground state is ferroelastic, and the ferroelectricity in STO is suppressed by the orthorhombic transition. In this study, we explore whether vertical lattice strain in three-dimensional VANs can be used to induce new ferroelectric phases in SrTiO 3 :MgO (STO:MgO) VAN thin films. The STO:MgO system incorporates ordered, vertically aligned MgO nanopillars into a STO film matrix. Strong lattice coupling between STO and MgO imposes a large lattice strain in the STO film. We have investigated ferroelectricity in the STO phase, existing up to room temperature, using piezoresponse force microscopy, phase field simulation and second harmonic generation. We also serendipitously discovered the formation of metastable TiO nanocores in MgO nanopillars embedded in the STO film matrix. Our results emphasize the design of new phases via vertical epitaxial strain in VAN thin films.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Two-dimensional multifunctional materials from endohedral fullerenes

A multifunctional two-dimensional (2D) material is theoretically predicted based on systematic ab initio calculations and model simulations for the honeycomb lattice of endohedral fullerene W@C 28 molecules. It has structural bistability, ferroelectricity, multiple magnetic phases, and excellent valley characters and can be easily functionalized by the proximity effect with magnetic isolators such as MnTiO 3 . Furthermore, we may also manipulate the valley Hall and spin transport properties by selectively switching a few W@C 28 molecules to the metastable phase. These conclusions contribute to integrating different functions in a single 2D material for technological innovations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Phase Switching as the Origin of Large Piezoelectric Response in Organic-Inorganic Perovskites: A First-Principles Study

Piezoelectrics are critical functional components of many practical applications such as sensors, ultrasonic transducers, actuators, medical imaging, telecommunications. So far, the best performing piezoelectrics are ferroelectric ceramics, many of which are toxic, heavy, hard, and cost-ineffective. Recently, a groundbreaking discovery of extraordinarily large piezoelectric coefficients in the family of organic-inorganic perovskites gave a hope for a cheaper, environmentally friendly, inexpensive, light-weight and flexible alternative. However, the origin of such response in organic-inorganic ferroelectrics whose spontaneous polarization is an order of magnitude smaller than for inorganic counterparts remains unclear. In this study we employ first-principles simulations to predict that the mechanism associated with large piezoelectric constants is of extrinsic origin and associated with switching between the stable phase and previously overlooked energetically competitive metastable phase that can be stabilized by the external stress. Here, the phase switching changes the polarization direction and, therefore, gives origin to large piezoelectric response, similar to PbZr$_{1-x}$Ti$_x$O$_3$ near morphotropic phase boundary. Existence of such metastable phases is likely to manifest as the dynamical molecular disorder above the Curie temperature and, therefore, could be intrinsic to the entire family of organic-inorganic ferroelectrics with such disorder.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Asymmetry of the Ferroelectric Phase Transition in BaTiO 3

Symmetry changes during phase transformations fundamentally determine the behavior of thermodynamic systems, governing phenomena as diverse as water evaporation, fermion condensation, and epidemic spreading. Phase transitions are conventionally divided into two classes, and this classification is typically assumed to remain invariant upon reversing the transition. Here, an asymmetric phase transformation is uncovered in the ferroelectric–paraelectric transition of single-crystal BaTiO 3 , a model system for first-order transitions. Under slow temperature variation (≤0.1 °C min −1 ), thermodynamic, dielectric, and domain-structure measurements reveal that the ferroelectric-to-paraelectric transition exhibits latent heat, phase coexistence, and a discontinuous order parameter, while these signatures are absent upon cooling. Complementary phase-field simulations demonstrate similar behavior, attributing it to distinct elastic strain energy accumulation and release during heating and cooling. These findings reveal a first-order character upon heating but a second-order-like behavior upon cooling, challenging the conventional paradigm of symmetric phase-transition classification and suggesting new possibilities for ferroelectric-based energy storage.

Hershkovitz, Asaf [Technion-Israel Institute of Te↗
DOE OSTI2021

Localized strain profile in surface electrode array for programmable composite multiferroic devices

In this work, we investigate localized in-plane strains on the microscale, induced by arrays of biased surface electrodes patterned on piezoelectrics. Particular focus is given to the influence that adjacent electrode pairs have on one another to study the impact of densely packed electrode arrays. We present a series of X-ray microdiffraction studies to reveal the spatially resolved micrometer-scale strain distribution. The strain maps with micrometer-scale resolution highlight how the local strain profile in square regions up to 250 x 250 lm 2 in size is affected by the surface electrodes that are patterned on ferroelectric single-crystal [Pb(Mg 1/3 Nb 2/3 )O 3 ] x -[PbTiO 3 ] 1-x . The experimental measurements and simulation results show the influence of electrode pair distance, positioning of the electrode pair, including the angle of placement, and neighboring electrode pair arrangements on the strength and direction of the regional strain. Our findings are relevant to the development of microarchitected strain-mediated multiferroic devices. The electrode arrays could provide array-addressable localized strain control for applications including straintronic memory, probabilistic computing platforms, microwave devices, and magnetic-activated cell sorting platforms.

42 ENGINEERING↗
DOE OSTI2025

Towards Scalable 3D Integration of 2T-nC FeRAM with Hundreds of Layer Stacking

In this article, we study the limits of the number of capacitors and read history dependence in a 2T-nC ferroelectric random-access memory (FeRAM) cell, paving the way for its high-density integration toward hundreds of stacked layers. Through a comprehensive experimental and simulation study on the scaling behavior of the 2T-nC FeRAM architecture, we demonstrate: (i) successful fabrication of 2T-64C cells with robust memory operation and clearly distinguishable ‘0’ and ‘1’ states, even in 64- capacitor configurations; (ii) that the parasitic capacitance of the floating node originates predominantly from the linear component of the ferroelectric capacitor, and its impact on n-scaling—due to degraded sense margin—can be mitigated by floating unselected capacitors with enough TΩ isolation; (iii) that sharing write and read transistors among n capacitors introduces a read history dependence issue due to fluctuating floating node voltage (VFN); and (iv) that a proposed FN discharge scheme can effectively eliminate read-sequence dependence, at the cost of reduced read endurance.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Condensation of collective polar vortex modes

The dynamics of extended objects such as domain walls, domain bubbles, vortex structures, etc., can be described by their equations of motion associated with their effective mass and spring constant. Here we analytically derive the equations of motion for the polarization dynamics and elastodynamics for the structural responses of ferroelectric polar vortices, and theoretically extract their effective mass, spring constant, and mode frequencies. We demonstrate two subterahertz phonon modes and predicted their frequencies, both consistent with our recent experimental measurements and phase-field simulations. We show that elastic modulation of the energy function and spring constants leads to a condensation of a collective mode upon a second-order structural transition from symmetric to asymmetric vortices at a critical strain, analogous to the ferroelectric soft phonon mode at a ferroelectric transition. Furthermore, the present work offers a theoretical framework for predicting and manipulating the ultrafast collective dynamics of polar nanostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Negative capacitance regime in antiferroelectric PbZrO 3

The potential of antiferroelectrics to exhibit a negative capacitance regime has been largely overlooked as all the attention focused on their polar counterparts, ferroelectrics. We use nonequilibrium first-principles-based molecular dynamics to probe a negative capacitance regime in prototypical antiferroelectric PbZrO 3 . Simulations predict that this antiferroelectric can exhibit a negative capacitance/susceptibility regime in response of polarization to an internal electric field, which is a superposition of applied and residual depolarizing fields. Consequently, the regime emerges when the polarization surface charge in the polar phase of antiferroelectric is not fully screened, as is often the case in thin films and nanostructures. The negative capacitance regime occurs below the Curie temperature and disappears in the paraelectric phase. We find that the time the material spends in the negative capacitance regime is proportional to the time needed to complete antipolar–polar (or its reverse) transition and shortens as the frequency of the applied field increases. Furthermore, a negative susceptibility value exhibits strong dependence on the quality of surface charge screening with the largest in magnitude values occurring in the vicinity of the transition into a negative capacitance regime.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Domain-wall magnetoelectric coupling in multiferroic hexagonal YbFeO 3 films

Electrical modulation of magnetic states in single-phase multiferroic materials, using domain-wall magnetoelectric (ME) coupling, can be enhanced substantially by controlling the population density of the ferroelectric (FE) domain walls during polarization switching. In this work, we investigate the domain-wall ME coupling in multiferroic h-YbFeO 3 thin films, in which the FE domain walls induce clamped antiferromagnetic (AFM) domain walls with reduced magnetization magnitude. Simulation according to the phenomenological theory indicates that the domain-wall ME effect is dramatically enhanced when the separation between the FE domain walls shrinks below the characteristic width of the clamped AFM domain walls during the ferroelectric switching. Experimentally, we show that while the magnetization magnitude remains same for both the positive and the negative saturation polarization states, there is evidence of magnetization reduction at the coercive voltages. These results suggest that the domain-wall ME effect is viable for electrical control of magnetization.

42 ENGINEERING↗
DOE OSTI2025

Thermal disorder and phonon softening in the ferroelectric phase transition of lead titanate

We report a molecular dynamics study of ab initio quality of the ferroelectric phase transition in crystalline PbTi⁢O3. We model anharmonicity accurately in terms of potential energy and polarization surfaces trained on density functional theory data with modern machine learning techniques. Our simulations demonstrate that the transition has a strong order-disorder character, in agreement with diffraction experiments, and provide fresh insight into the approach to equilibrium across the phase transition. We find that the emergence and disappearance of the macroscopic polarization is driven by dipolar switching at the nanometer scale. We also computed the infrared optical absorption spectra in both the ferroelectric and the paraelectric phases, finding good agreement with the experimental Raman frequencies. Often, the almost ideal displacive character of the soft mode detected by Raman scattering in the paraelectric phase has been contrasted with the order-disorder character of the transition suggested by diffraction experiments. We settle this issue by showing that the soft mode coexists with a strong Debye relaxation associated with thermal disordering of the dipoles. The Debye relaxation feature is centered at zero frequency and appears near the transition temperature in both the ferroelectric and the paraelectric phases.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Ab initio generalized Langevin equation

We introduce a machine learning–based approach called ab initio generalized Langevin equation (AIGLE) to model the dynamics of slow collective variables (CVs) in materials and molecules. In this scheme, the parameters are learned from atomistic simulations based on ab initio quantum mechanical models. Force field, memory kernel, and noise generator are constructed in the context of the Mori–Zwanzig formalism, under the constraint of the fluctuation–dissipation theorem. Combined with deep potential molecular dynamics and electronic density functional theory, this approach opens the way to multiscale modeling in a variety of situations. Here, we demonstrate this capability with a study of two mesoscale processes in crystalline lead titanate, namely the field-driven dynamics of a planar ferroelectric domain wall, and the dynamics of an extensive lattice of coarse-grained electric dipoles. In the first case, AIGLE extends the reach of ab initio simulations to a regime of noise-driven motions not accessible to molecular dynamics. In the second case, AIGLE deals with an extensive set of CVs by adopting a local approximation for the memory kernel and retaining only short-range noise correlations. The scheme is computationally more efficient than molecular dynamics by several orders of magnitude and mimics the microscopic dynamics at low frequencies where it reproduces accurately the dominant far-infrared absorption frequency.

97 MATHEMATICS AND COMPUTING↗
NASA NTRS2003

Performance Enhancement of Tunable Bandpass Filters Using Selective Etched Ferroelectric Thin Films

The inclusion of voltage-tunable barium strontium titanate (BSTO) thin films into planar band pass filters offers tremendous potential to increase their versatility. The ability to tune the passband so as to correct for minor deviations in manufacturing tolerances, or to completely reconfigure the operating frequencies of a microwave communication system, are highly sought-after goals. However, use of ferroelectric films in these devices results in higher dielectric losses, which in turn increase the insertion loss and decrease the quality factors of the filters. This study explores the use of patterned ferroelectric layers to minimize dielectric losses without degrading tunability. Patterning the ferroelectric layers enables us to constrict the width of the ferroelectric layers between the coupled microstrip lines, and minimize losses due to ferroelectric layers. Coupled one-pole microstrip bandpass filters with fundamental resonances at approx. 7.2 GHz and well defined harmonic resonances at approx. 14.4 and approx. 21.6 GHz, were designed, simulated and tested. For one of the filters, experimental results verified that its center frequency was tunable by 528 MHz at a center frequency of 21.957 GHz, with insertion losses varying from 4.3 to 2.5 dB, at 0 and 3.5 V/micron, respectively. These data demonstrate that the tuning-to-loss figure of merit of tunable microstrip filters can be greatly improved using patterned ferroelectric thin films as the tuning element, and tuning can be controlled by engineering the ferroelectric constriction in the coupled sections.

Miranda, Felix A.↗
DOE OSTI2025

A Study on the Impact of Temperature-Dependent Ferroelectric Switching Behavior in 3D Memory Architecture

The flourishing development of neural networks that require exponentially growing amounts of data has presented an elevated demand for memory footprint. To address this, researchers have been exploring hardware accelerators with innovative memory architectures like 3D memory. These 3D memory architectures offer enhanced storage capacity and processing capabilities, at a cost of rising on-chip temperature during operation. Hafnium Zirconium Oxide (HZO) based Ferroelectric Random Access Memory (FeRAM) is a promising nonvolatile memory candidate in neural network hardware accelerators for its outstanding write performance and reliability. However, its implementation in the architecture regarding the temperature-dependent ferroelectric switching behavior has not been well studied. In this work, we study the thermal impacts on polarization switching through experimental devices and simulation results. We conduct the circuit and architecture-level simulations to showcase that one can exploit this temperature rise to reduce FeRAM's write voltage and write energy due to its unique temperature-activated polarization switching mechanisms. As the on-chip temperature increases to 351K (ambient temperature at 300K) due to neural network workloads, the access energy per bit can be reduced by 27.6% when a dynamic write voltage is applied.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Simulating the non-monotonic strain response of nanoporous multiferroic composites under electric field control

In this work, we simulate and analyze the mechanical response of a class of multiferroic materials consisting of a templated porous nanostructure made out of cobalt ferrite (CFO) partially filled by atomic layer deposition (ALD) with a ferroelectric phase of lead zirconate titanate (PZT). The strain in the device is measured when an electric field is applied for varying ALD thicknesses, displaying a non-monotonic dependence with a maximum strain achieved for a coating thickness of 3 nm. To understand this behavior, we apply finite element modeling to the smallest repeatable unit of the nanoporous template and simulate the mechanical response as a function of PZT coating thickness. We find that this non-monotonic response is caused by the interplay between two driving forces opposing one another. First, increased porosity works toward increasing the strain due to a reduced system stiffness. Second, decreased porosity involves a larger mass fraction of PZT, which drives the electro-mechanical response of the structure, thus leading to a larger strain. The balance between these two driving forces is controlled by the shear coupling at the CFO/PZT interface and the effective PZT cross section along the direction of the applied electric field. Here, our numerical results show that considering a nonlinear piezoelectric response for PZT leads to an improved agreement with the experimental data, consistent with ex situ poling of the nanostructure prior to magnetic measurements.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗