Search NASA⌕ Search

SEARCH · Search NASA

Results for “high efficiency solar cell”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Irradiation Experiments on High Efficiency Nanowire Solar Cells Including Tilted Incidence Angle

Nanowire based solar cells have promising potential to become the next generation of space solar cells. In this study we corroborate their high radiation tolerance by irradiating high efficiency GaAs (efficiency > 15 %) nanowire solar cells with 1 MeV electrons at a fluence of 10 16 e - /cm 2 . Additionally, we theoretically show that the damage in nanowire solar cells is expected to be slightly dependent on the incidence angle and the geometry of the nanowire array. However, experimentally, two sets of GaAs nanowire solar cells have been irradiated with 1 MeV electrons at normal incidence and with a 25° tilted angle exhibiting a similar degradation.

high specific power↗
NASA NTRS1979

The potential of np GaAs solar cells for high efficiency concentrator applications

This communication considers the design of the front grid contact of np GaAs solar cells for high efficiency concentrator applications. This design involves shadowing, contact resistance, and active layer sheet resistance losses, and at high concentrations, the power loss due to voltage drop on the resistance of the grid fingers should be considered. Analysis of the performance can be calculated as a function of junction depth and surface recombination velocity. The junction depth can be optimized by considering its effect on the collection efficiency of the dark current-voltage characteristics or the open circuit voltage, and on the series resistance loss or the fill factor for material parameters. The choice of the material parameters, calculation of the short circuit current, the selection of the n layer thickness, and the cell maximum power and efficiency are discussed. It is concluded that optimized multi-grid structures should allow the use of 10 by 10 sq cm cells with good efficiencies at high concentration ratios, and efficiencies of 22 to 25% should be obtainable from large area cells at concentrations of 40 AM1.

Flat, A.↗
DOE OSTI2021

Development of High-Efficiency GaAs Solar Cells Grown on Nanopatterned GaAs Substrates

One approach to reducing the cost of high-efficiency III–V devices involves adding patterned layers to heteroepitaxial or homoepitaxial substrates to facilitate substrate removal and reuse. However, few studies have focused explicitly on high-quality devices grown over patterned substrates, which is required for any cost saving to be beneficial. In this work, we demonstrate the growth of high-efficiency GaAs solar cells on GaAs substrates patterned with an array of nanoscale SiOX mask stripes. We show that reducing the pattern dimensions to submicron length scales with nanoimprint lithography enables defect-free coalescence. By varying the growth conditions, faceting of the epilayer material during overgrowth of the patterned mask was also controlled. A V/III ratio of 200 during MOVPE overgrowth produced smooth coalesced epilayers, which is desirable for the growth of subsequent device layers. Inverted GaAs front homojunction devices grown on patterned GaAs(001) substrates achieved threading dislocation densities below 5 × 10 5 cm –2 and maintained >23% solar cell efficiencies at one sun illumination, equivalent to control devices grown on unpatterned epi-ready substrates.

14 SOLAR ENERGY↗
NASA NTRS1986

A review of high-efficiency silicon solar cells

Various parameters that affect solar cell efficiency were discussed. It is not understood why solar cells produced from less expensive Czochralski (Cz) silicon are less efficient than cells fabricated from more expensive float-zone (Fz) silicon. Performance characteristics were presented for recently produced, high-efficient solar cells fabricated by Westinghouse Electric Corp., Spire Corp., University of New South Wales, and Stanford University.

Rohatgi, A.↗
DOE OSTI2023

Regiospecific Incorporation of Acetylene Linker in High‐Electron Mobility Dimerized Acceptors for Organic Solar Cells with High Efficiency (18.8%) and Long 1‐Sun Lifetime (> 5000 h)

Abstract The commercialization of organic solar cells (OSCs) requires both high power conversion efficiency (PCE) and long‐term stability. However, the lifetime of the OSCs containing small‐molecule acceptors (SMA) should be significantly enhanced. In this study, a series of planarity‐controlled is developed, high electron mobility dimerized SMAs (DSMAs) and realize OSCs with high‐performance (PCE = 18.8%) and high‐stability ( t 80% lifetime = 5380 h under 1‐Sun illumination). An acetylene linker with a planar triple bond is designed for dimerization of SMA units to afford the high backbone planarity necessary to achieve high crystallinity and electron mobility. To further engineer the molecular conformation and electron mobility of the DSMAs, different regioisomers of a Y‐based SMA are dimerized to yield three regioisomerically distinct DSMAs, denoted as DYA‐I, DYA‐IO, and DYA‐O, respectively. It is found that the crystallinity, electron mobility, and glass transition temperature of the DSMAs gradually increase in the order of DYA‐O, DYA‐IO, and DYA‐I, which, in turn, enhance the PCE and device stability of the resulting OSCs; DYA‐O (PCE = 16.45% and t 80% lifetime = 3337 h) < DYA‐IO (PCE = 17.54% and t 80% lifetime = 4255 h) < DYA‐I (PCE = 18.83% and t 80% lifetime = 5380 h).

Chemistry↗
DOE OSTI2020

A 3D nonfullerene electron acceptor with a 9,9'-bicarbazole backbone for high-efficiency organic solar cells

One-dimensional ladder-type nonfullerene electron acceptors (NFAs) with large fused ring cores have been typically used in highly efficient organic solar cells (OSCs). Prior studies have demonstrated that small molecule acceptors with three-dimensional (3D) structures may exhibit low energy loss, and hence can lead to improved OSC performance. In this study, a new 3D NFA ( 99CZ-8F ) with a 9,9'-bicarbazole backbone was designed, synthesized, and characterized, where two linear A-D-A architectures were linked by a single N–N bond. 99CZ-8F showed strong absorption in the range of 500–800 nm in the solid state, which is complementary to the absorption of the donor material PM6 . After regulating the morphology of the active layer via binary solvent mixture, the optimized device exhibited a maximum power conversion efficiency (PCE) of 6.6 ± 0.1%, which is among the best reported values for 3D nonfullerene electron acceptor based OSCs

14 SOLAR ENERGY↗
NASA NTRS1986

High-efficiency silicon solar cells - Development, current issues and future directions

This paper provides a review of material, process, and design considerations that are essential for achieving high-efficiency silicon solar cells. It describes an approach that resulted in 18.0-18.5-percent-efficient cells on low-resistivity float-zone silicon material. It is shown experimentally that a combination of surface passivation and double-layer antireflection coating can provide 2-3 percent (absolute) improvement in cell efficiency provided the material, process and cell design are carefully selected.

Rohatgi, A.↗
DOE OSTI2022

Organic molecular dynamics and charge-carrier lifetime in lead iodide perovskite MAPbI 3

Significance Hybrid organic–inorganic perovskites (HOIPs) are among the most promising materials for next-generation solar cells that combine high efficiency and low cost. The record efficiency of HOIP-based solar cells has reached above 25%, and they can be manufactured using simple solution-processing methods that can be drastically cheaper than the current commercial solar cell technologies. Despite the progress so far, the microscopic mechanism for the high solar cell efficiency in HOIPs is yet to be understood. In this study, we show that the ability of organic molecules to rotate on an appropriate time scale in HOIPs can extend the lifetime of photoexcited charge carriers and lead to higher efficiency. This insight can guide the progress toward improved solar cell performance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

High‐Efficiency Organic Solar Cells with Wide Toleration of Active Layer Thickness

Industrial printing production of organic solar cells (OSCs) requires high power conversion efficiency (PCE) with wide toleration of active layer thickness. Herein, high‐efficiency thick‐film OSCs are demonstrated using a polymer fibril network strategy (FNS), which involves a donor polymer (PT2) that can self‐assemble into fibril nanostructure, and two nonfullerene acceptors with different crystalline properties. The fibril network can form a high‐speed hole transport channel and the addition of IDIC as a third component in active layers can improve the electron transport. As a result, the OSCs show high PCEs of ≈12% with wide toleration of active layer thickness (from 100 to 500 nm). The results indicate that FNS is a promising approach for the fabrication of highly efficient thick‐film PSCs, which can facilitate the commercialization of OSCs.

Weng, Kangkang↗
NASA NTRS1986

Identification of some key parameters limiting the performance of high-efficiency silicon solar cells

This paper presents, for the first time, a detailed sensitivity analysis of key cell parameters on silicon-cell efficiency by incorporating advanced solar cell physics in a sophisticated numerical simulation program. It delineates the true physical barriers to obtaining a high-efficiency silicon solar cell. Specific parameters presently limiting cell efficiency are identified to be the minority carrier lifetime and the recombination velocities at the front and back surfaces. Practical cell efficiencies in the vicinity of 22 percent are estimated to be attainable by using good quality silicon crystal and substantially reducing surface recombination velocities.

Mokashi, Anant R.↗
NASA NTRS1980

High efficiency wraparound contact solar cells /HEWACS/

A cell technology, producing high efficiency wrap-around contact solar cells (HEWACS), with both electrical contacts on the back and AMO conversion efficiencies of almost 15%, is presented. A flow chart indicating the baseline process sequence along with the process changes is given. Tests checking for coating delamination and contact integrity, those measuring contact strength, and thermal cycle tests, successfully demonstrated that this cell technology is ready to be moved to the pilot production stage.

Gillanders, M.↗
DOE OSTI2021

New Approaches to Low-Cost Scalable Doping of Interdigitated back Contact Silicon Solar Cells (Final Report)

The goal of this project was to develop novel approaches to patterning of dopants in the rear fingers of interdigitated back contact (IBC) Si solar cells to reduce the cost of manufacturing this high-efficiency-potential cell architecture. The work throughout this project can be divided into four categories: (a) development of dopant patterning technique using laser scribed Si contacts masks that are mechanically aligned with ~10 μm resolution to the underlying Si substrate; (b) measuring dopant spreading profiles in the isolation region between n- and p-type dopant fingers during plasma-enhanced chemical vapor deposition (PECVD) of doped hydrogenated amorphous silicon (a-Si:H) via shadow masks, and dopant desorption and re-adsorption during high-temperature annealing; (c) understanding the role of dopant compensation on the shunt resistance in contaminated isolation regions through analysis of defect-enhanced compensation; and (d) simulation and fabrication of passivated two-sided grid and back-contact solar cells to demonstrate the use of direct dopant patterning in cell fabrication. For the passivated two-sided grid solar cells, masked deposition was used to demonstrate an improvement in the blue response of the cell by creating a shallow front emitter. During development of the masked PECVD patterning process, we measured 3-D dopant profiles using secondary ion mass spectrometry. After deposition, in the masked region, the phosphorus dopant tail was >100 µm at concentrations >10 19 cm -3 while the boron dopant tail was shorter. During high-temperature crystallization of doped a-Si:H films to polycrystalline Si (poly-Si), phosphorus atoms spread by desorbing from the poly-Si surface and re-adsorbing onto intrinsic poly-Si on adjacent wafers that were separated by several millimeters. These contamination mechanisms resulted in a decrease in resistivity from ~10 5 Ω·cm for intrinsic poly-Si to ~10 -1 Ω·cm for contaminated poly-Si. Mitigation strategies for each contamination mechanism were developed to maintain a resistivity of ~10 5 Ω·cm between doped fingers. During fabrication of the 209 cells created during this project, it was found that despite contamination of the IBC gap through the abovementioned mechanisms, high shunt resistances and FF ~75% were still reached. Investigation into this led to the discovery of defect-enhanced compensation which exists within highly defective poly-Si when net doping concentrations reach the value of defect density (~10 18 cm -3 for many poly-Si films). Simulations guided us in the fabrication of IBCs and the cells fabricated were able to meet the year-end goals for BP 2 and 3 of 15% and 17% IBC cell efficiency, as well as the BP 4 goal of a 1% absolute increase in efficiency for PERC-like devices. However, the most efficient cell created during this project of 18.6% fell short of the 21% final project target. While the champion device fell short in V oc and J sc , many devices fabricated were able to reach the necessary goals of ~40 mA/cm 2 , ~700 mV, and ~75% FF required for a 21% device. The results generated from this project were disseminated through 11 conference presentations and proceedings. Presentations included oral talks at 2019 IEEE PVSC, 2019 MRS Fall Meeting, 2020 PVSEC-30 and 2021 IEEE PVSC, as well as poster presentations at 2020 IEEE PVSC and 2021 SiPV. The project resulted in 2 peer reviewed publications – one published in IEEE Journal of Photovoltaics and one in ACS Applied Energy Materials. The information gained in this project will aid in development of improved processes for fabrication of high-efficiency solar cells and other areas of the semiconductor device industry as well. The IBC cells will also pave the way for higher efficiency tandem devices. Through further manufacturing of high-efficiency solar cells, more of the world’s energy demands can be met through renewable sources, helping to stave off the worst effects that may come about from global climate change.

14 SOLAR ENERGY↗
DOE OSTI2022

Using electron channeling contrast imaging to inform and improve the growth of high-efficiency GaAs solar cells on nanopatterned GaAs substrates

Patterned substrates provide opportunities for reducing the cost of high-efficiency III-V devices by incorporating mechanically weak layers beneficial for substrate reuse (e.g. by spalling). In this work, the functionality of electron channeling contrast imaging (ECCI) as a tool to efficiently understand and mitigate defect formation is exemplified by developing a process in which high-quality III-V material can be grown on nanopatterned GaAs substrates. Reactive ion etching used in the patterning process was found to damage the GaAs substrate surface, leading to the formation of stacking faults in the epitaxial material as observed by ECCI. Etching the patterned substrates in a 1 NH4OH: 1 H2O2: 50 DI H2O solution for 10 s prior to growth removed the substrate surface damage and stacking faults were no longer present. Growth of solar cell device structures initially produced samples with many macroscale flaws creating shunts in the devices, which complicated the assessment of material quality by device measurements. However, ECCI revealed that the epitaxial material surrounding macroscale flaws was free from any crystallographic defects such as stacking faults and threading dislocations. With this knowledge, we focused on refining the patterning process to eliminate the macroscale flaws. Solar cells were then grown on the improved nanopatterned substrates and exhibited device structures with defect densities less than 5 x 105 cm -2 and average conversion efficiency of 24.8%, nearly identical to devices grown on unpatterned epi-ready substrates (25.0%).

14 SOLAR ENERGY↗
NASA NTRS1977

Applications of ion implantation for high efficiency silicon solar cells

Ion implantation is utilized for the dopant introduction processes necessary to fabricate a silicon solar cell. Implantation provides a versatile powerful tool for development of high efficiency cells. Advantages and problems of implantation and the present status of developmental use of the technique for solar cells are discussed.

Minnucci, J. A.↗
DOE OSTI2020

High Efficiency 6-Junction Solar Cells for the Global and Direct Spectra

We show 6-junction inverted metamorphic solar cells with high efficiencies under both the global and direct spectrum, and discuss improvements to device components. High voltage AlGaInP subcells are demonstrated on GaAs substrates miscut 2° towards (111)B by using Sb surfactant to reduce atomic ordering. This miscut enables high voltage and low dislocation density GaInAs subcells by using atomically-ordered GaInP-based graded buffers. One-sun efficiencies of 39.2 ± 1.3% under the global spectrum and 39.4 ± 1.1% direct spectrum have been demonstrated by using these high voltage subcell components. For high efficiency under the concentrated direct spectrum, low resistance is also necessary, which requires a challenging and nonintuitive optimization of tunnel junctions and heterobarriers. Increasing the thickness of a (Al)GaInAs spacer layer between the back surface fields (BSF) and tunnel junctions (TJ) of latticemismatched subcells reduces nonlinear resistance, which implies a detrimental interaction between the BSF and TJ. Concentrator devices with optimized spacer layers show reduced effective resistance and maintain fill factor > 75% at 1100 suns. Device efficiencies under the concentrated direct spectrum peak at 47.1 ± 3.2% at 143 suns.

41 EE - Solar Energy Technologies Office (EE-4S)↗